Produkte > AOI
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
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AOI11S60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI11S60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI1N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 1.3A TO251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI1N60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 1.3A TO251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI1N60L | Alpha & Omega Semiconductor | TRANS MOSFET N-CH 600V 1.3A 3-PIN(3+TAB) TO-251A T/R | Produkt ist nicht verfügbar | |||||||||||||||||
AOI1R4A70 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2.4A; 48W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.4A Power dissipation: 48W Case: TO251A Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Gate charge: 8nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
AOI1R4A70 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2.4A; 48W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.4A Power dissipation: 48W Case: TO251A Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Gate charge: 8nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
AOI1R4A70 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 3.8A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI206_002 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 18A TO251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI208 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 18A TO251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI21357 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -180A; 31W; TO251A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Pulsed drain current: -180A Power dissipation: 31W Case: TO251A Gate-source voltage: ±25V On-state resistance: 11.5mΩ Gate charge: 70nC Kind of channel: enhanced Version: ESD | Produkt ist nicht verfügbar | |||||||||||||||||
AOI21357 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 70A 3-Pin(3+Tab) TO-251A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
AOI21357 | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 30V 23A/70A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V | auf Bestellung 1365 Stücke: Lieferzeit 10-14 Tag (e) |
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AOI21357 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -180A; 31W; TO251A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Pulsed drain current: -180A Power dissipation: 31W Case: TO251A Gate-source voltage: ±25V On-state resistance: 11.5mΩ Gate charge: 70nC Kind of channel: enhanced Version: ESD Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
AOI2210 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH | auf Bestellung 3490 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
AOI2520C2R2JT | ARLITECH | 04+ SMD | auf Bestellung 1600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
AOI2520C2R2JT | ARLITECH | SMD 04+ | auf Bestellung 1600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
AOI2520CR22JT | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
AOI2520CR91JT | 2005+ | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
AOI2606 Produktcode: 168277 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
AOI2606 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 14A/46A TO251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI2610 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 10A/46A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 71.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI2610E | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 46A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Supplier Device Package: TO-251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI2610E | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251A; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36.5A Power dissipation: 23.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: THT Gate charge: 7nC Kind of channel: enhanced Version: ESD | Produkt ist nicht verfügbar | |||||||||||||||||
AOI2610E | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251A; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36.5A Power dissipation: 23.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: THT Gate charge: 7nC Kind of channel: enhanced Version: ESD Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
AOI2610E | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 46A 3-Pin(3+Tab) TO-251A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
AOI2614 | Alpha & Omega Semiconductor Inc. | Description: MOSFET NCH 60V 35A TO251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI294A | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 30W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Power dissipation: 30W Case: TO251A Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Gate charge: 15.5nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
AOI294A | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 30W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Power dissipation: 30W Case: TO251A Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Gate charge: 15.5nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
AOI294A | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 55A 3-Pin(3+Tab) TO-251A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
AOI296A | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 35W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 45A Power dissipation: 35W Case: TO251A Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Gate charge: 18.5nC Kind of channel: enhanced | auf Bestellung 2964 Stücke: Lieferzeit 14-21 Tag (e) |
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AOI296A | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 35W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 45A Power dissipation: 35W Case: TO251A Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Gate charge: 18.5nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 2964 Stücke: Lieferzeit 7-14 Tag (e) |
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AOI296A | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 70A 3-Pin(3+Tab) TO-251A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
AOI2N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 2A TO251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI2N60 | Alpha & Omega Semiconductor | auf Bestellung 3495 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
AOI2N60A | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 2A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI360A70 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 12A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V Power Dissipation (Max): 138W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI360A70 | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||||
AOI403 | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 30V 15A/70A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 20V Power Dissipation (Max): 2.5W (Ta), 90W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 10V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI403 | ALPHA&OMEGA | Transistor P-Channel MOSFET; 30V; 25V; 8,5mOhm; 70A; 90W; -55°C ~ 175°C; AOI403 TAOI403 Anzahl je Verpackung: 25 Stücke | auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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AOI403 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 70A 3-Pin(3+Tab) TO-251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI403 Produktcode: 144923 | Transistoren > Transistoren P-Kanal-Feld | Produkt ist nicht verfügbar | ||||||||||||||||||
AOI409 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 60V 26A 3-Pin(3+Tab) TO-251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI409 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -18A; 30W; TO251A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -18A Power dissipation: 30W Case: TO251A Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Gate charge: 22.2nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
AOI409 | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 60V 26A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI409 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -18A; 30W; TO251A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -18A Power dissipation: 30W Case: TO251A Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Gate charge: 22.2nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
AOI409 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 60V 26A 3-Pin(3+Tab) TO-251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI4102 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 8A TO251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI4102 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 8A 3-Pin(3+Tab) TO-251A T/R | Produkt ist nicht verfügbar | |||||||||||||||||
AOI4126 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 50W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Power dissipation: 50W Case: TO251A Gate-source voltage: ±25V On-state resistance: 24mΩ Mounting: THT Gate charge: 28nC Kind of channel: enhanced Anzahl je Verpackung: 3500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
AOI4126 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 7.5A/43A TO251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI4126 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 43A 3-Pin(3+Tab) TO-251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI4126 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 50W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Power dissipation: 50W Case: TO251A Gate-source voltage: ±25V On-state resistance: 24mΩ Mounting: THT Gate charge: 28nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
AOI4130 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 6.5A TO251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI4130 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 30A 3-Pin(3+Tab) TO-251A T/R | Produkt ist nicht verfügbar | |||||||||||||||||
AOI4144_002 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH | Produkt ist nicht verfügbar | |||||||||||||||||
AOI4146 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 15A TO251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI418 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 13.5A/36A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI4184 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 50A 3-Pin(3+Tab) TO-251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI4184 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 25W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Power dissipation: 25W Case: TO251A Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Gate charge: 27.2nC Kind of channel: enhanced | auf Bestellung 215 Stücke: Lieferzeit 14-21 Tag (e) |
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AOI4184 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 40V 12A/50A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI4184 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 25W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Power dissipation: 25W Case: TO251A Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Gate charge: 27.2nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 215 Stücke: Lieferzeit 7-14 Tag (e) |
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AOI4185 | ALPHA&OMEGA | Transistor P-Channel MOSFET; 40V; 20V; 23mOhm; 40A; 62,5W; -55°C ~ 175°C; AOI4185 TAOI4185 Anzahl je Verpackung: 25 Stücke | auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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AOI4185 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -31A; 31W; TO251A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -31A Power dissipation: 31W Case: TO251A Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 18.6nC Kind of channel: enhanced | auf Bestellung 1797 Stücke: Lieferzeit 14-21 Tag (e) |
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AOI4185 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 40V 40A 3-Pin(3+Tab) TO-251A | auf Bestellung 2954 Stücke: Lieferzeit 14-21 Tag (e) |
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AOI4185 | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 40V 40A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI4185 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -31A; 31W; TO251A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -31A Power dissipation: 31W Case: TO251A Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 18.6nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 1797 Stücke: Lieferzeit 7-14 Tag (e) |
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AOI4185 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 40V 40A 3-Pin(3+Tab) TO-251A | auf Bestellung 2954 Stücke: Lieferzeit 14-21 Tag (e) |
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AOI4185 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 40V 40A 3-Pin(3+Tab) TO-251A | auf Bestellung 2954 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
AOI423 | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 30V 15A/70A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 20V Power Dissipation (Max): 2.5W (Ta), 90W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 10V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI423 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 70A 3-Pin(3+Tab) TO-251A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
AOI423 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -67A; 45W; TO251A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -67A Power dissipation: 45W Case: TO251A Gate-source voltage: ±25V On-state resistance: 8.5mΩ Mounting: THT Gate charge: 45nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 3256 Stücke: Lieferzeit 7-14 Tag (e) |
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AOI423 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -67A; 45W; TO251A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -67A Power dissipation: 45W Case: TO251A Gate-source voltage: ±25V On-state resistance: 8.5mΩ Mounting: THT Gate charge: 45nC Kind of channel: enhanced | auf Bestellung 3256 Stücke: Lieferzeit 14-21 Tag (e) |
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AOI4286 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 30W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 30W Case: TO251A Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 2.8nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 107 Stücke: Lieferzeit 7-14 Tag (e) |
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AOI4286 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 30W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 30W Case: TO251A Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 2.8nC Kind of channel: enhanced | auf Bestellung 107 Stücke: Lieferzeit 14-21 Tag (e) |
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AOI4286 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 4A/14A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 14A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 50 V | auf Bestellung 10254 Stücke: Lieferzeit 10-14 Tag (e) |
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AOI4286 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 14A 3-Pin(3+Tab) TO-251A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
AOI442 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 7A TO251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI442 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 37A 3-Pin(3+Tab) TO-251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI442 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 37A 3-Pin(3+Tab) TO-251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI442 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 30W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 26A Power dissipation: 30W Case: TO251A Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: THT Gate charge: 24.2nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
AOI442 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 30W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 26A Power dissipation: 30W Case: TO251A Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: THT Gate charge: 24.2nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
AOI444 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) TO-251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI444 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9A; 10W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9A Power dissipation: 10W Case: TO251A Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 3.8nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
AOI444 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9A; 10W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9A Power dissipation: 10W Case: TO251A Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 3.8nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
AOI444 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 4A/12A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V Power Dissipation (Max): 2.1W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI468 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 8.3A; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 8.3A Case: TO251A Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: THT Gate charge: 12.8nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
AOI468 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 8.3A; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 8.3A Case: TO251A Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: THT Gate charge: 12.8nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
AOI468 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N CH 300V 11.5A TO252 Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -50°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI468 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 300V 11.5A 3-Pin(3+Tab) TO-251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI472A | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 25V 18A/46A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI482 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 32A 3-Pin(3+Tab) TO-251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI482 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 5A/32A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI4C60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 4A TO-252 | Produkt ist nicht verfügbar | |||||||||||||||||
AOI4N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 4A TO251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI4N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-251A T/R | Produkt ist nicht verfügbar | |||||||||||||||||
AOI4S60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 4A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 263 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI4S60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI4T60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 4A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-251A Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI4T60P | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH | Produkt ist nicht verfügbar | |||||||||||||||||
AOI508 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-251A T/R | Produkt ist nicht verfügbar | |||||||||||||||||
AOI508 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 22A/70A TO251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI510 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 70A TO251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI510 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-251A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
AOI510 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 70A TO251A | auf Bestellung 3288 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
AOI514 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 46A 3-Pin(3+Tab) TO-251A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
AOI514 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 17A/46A TO251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI516 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 17A TO251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI516_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 18A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI516_002 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 18A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI518 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 15A TO251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI518_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 18A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI530 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 23A/70A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI538 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 34A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI538 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-251A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
AOI5N40 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 400V 4.2A 3-Pin(3+Tab) TO-251A T/R | Produkt ist nicht verfügbar | |||||||||||||||||
AOI5N40 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 2.8A; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.8A Case: TO251A Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Gate charge: 6.9nC Kind of channel: enhanced Anzahl je Verpackung: 3500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
AOI5N40 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 400V 4.2A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI5N40 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 2.8A; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.8A Case: TO251A Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Gate charge: 6.9nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
AOI600A60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 8A TO251A | auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
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AOI66406 | Alpha & Omega Semiconductor | N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
AOI66406 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 45A; 20.5W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 45A Power dissipation: 20.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 6.1mΩ Mounting: THT Gate charge: 8.5nC Kind of channel: enhanced Anzahl je Verpackung: 3500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
AOI66406 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 45A; 20.5W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 45A Power dissipation: 20.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 6.1mΩ Mounting: THT Gate charge: 8.5nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
AOI66406 | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tape & Reel (TR) Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI7N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 7A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI7N65 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 7A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI7N65 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-251A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
AOI7S65 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-251A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
AOI7S65 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 7A TO251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI8N25 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 250V 8A 3-Pin(3+Tab) TO-251A T/R | Produkt ist nicht verfügbar | |||||||||||||||||
AOI8N25 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 250V 8A TO251A | Produkt ist nicht verfügbar | |||||||||||||||||
AOI8N25 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 5A Case: TO251A Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: THT Gate charge: 6nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
AOI8N25 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 5A Case: TO251A Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: THT Gate charge: 6nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
AOI950A70 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.2A Power dissipation: 56.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: THT Gate charge: 10nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
AOI950A70 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.2A Power dissipation: 56.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: THT Gate charge: 10nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
AOI950A70 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 5A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1A, 10V Power Dissipation (Max): 56.5W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 461 pF @ 100 V | auf Bestellung 3461 Stücke: Lieferzeit 10-14 Tag (e) |
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AOI9N50 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 9A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 860mOhm @ 4.5A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251A Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
AOI9N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-251A Tube | Produkt ist nicht verfügbar |