Technische Details AOI66406 Alpha & Omega Semiconductor
Description: N, Packaging: Tape & Reel (TR), Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-251A, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V.
Weitere Produktangebote AOI66406
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AOI66406 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 45A; 20.5W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 45A Power dissipation: 20.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 6.1mΩ Mounting: THT Gate charge: 8.5nC Kind of channel: enhanced Anzahl je Verpackung: 3500 Stücke |
Produkt ist nicht verfügbar |
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| AOI66406 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V |
Produkt ist nicht verfügbar |
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AOI66406 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 45A; 20.5W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 45A Power dissipation: 20.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 6.1mΩ Mounting: THT Gate charge: 8.5nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |