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AOI4184 ALPHA & OMEGA SEMICONDUCTOR
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Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 25W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 25W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 27.2nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 878 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
51+ | 1.42 EUR |
111+ | 0.65 EUR |
125+ | 0.57 EUR |
152+ | 0.47 EUR |
161+ | 0.45 EUR |
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Produktbewertung abgeben
Technische Details AOI4184 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 40V 12A/50A TO251A, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V, Power Dissipation (Max): 2.3W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: TO-251A, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V.
Weitere Produktangebote AOI4184 nach Preis ab 0.45 EUR bis 1.42 EUR
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AOI4184 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 25W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Power dissipation: 25W Case: TO251A Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Gate charge: 27.2nC Kind of channel: enhanced |
auf Bestellung 878 Stücke: Lieferzeit 14-21 Tag (e) |
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AOI4184 | Hersteller : Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AOI4184 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V |
Produkt ist nicht verfügbar |