AOI21357 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 23A/70A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
auf Bestellung 3085 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 1.18 EUR |
| 70+ | 0.98 EUR |
| 140+ | 0.71 EUR |
| 560+ | 0.59 EUR |
| 1050+ | 0.5 EUR |
| 2030+ | 0.45 EUR |
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Technische Details AOI21357 Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 23A/70A TO251A, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: TO-251A, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V.
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Preis ohne MwSt |
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AOI21357 | Hersteller : Alpha & Omega Semiconductor |
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| AOI21357 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -180A; 31W; TO251A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Pulsed drain current: -180A Power dissipation: 31W Case: TO251A Gate-source voltage: ±25V On-state resistance: 11.5mΩ Gate charge: 70nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
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| AOI21357 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -180A; 31W; TO251A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Pulsed drain current: -180A Power dissipation: 31W Case: TO251A Gate-source voltage: ±25V On-state resistance: 11.5mΩ Gate charge: 70nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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