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AOI2610E Alpha & Omega Semiconductor
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Technische Details AOI2610E Alpha & Omega Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251A, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 36.5A, Power dissipation: 23.5W, Case: TO251A, Gate-source voltage: ±20V, On-state resistance: 9.5mΩ, Mounting: THT, Gate charge: 7nC, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote AOI2610E
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AOI2610E | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36.5A Power dissipation: 23.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: THT Gate charge: 7nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AOI2610E | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Supplier Device Package: TO-251A |
Produkt ist nicht verfügbar |
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AOI2610E | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36.5A Power dissipation: 23.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: THT Gate charge: 7nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |