Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (137773) > Seite 747 nach 2297
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IRF840PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||||||||
IPP011N03LF2SAKSA1 | Infineon Technologies |
Description: TRENCH <= 40V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 210A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 250µA Supplier Device Package: PG-TO220-3-U05 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 336 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 15 V |
Produkt ist nicht verfügbar |
||||||||||||||||
![]() |
IPTC026N12NM6ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V Power Dissipation (Max): 3.8W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 169µA Supplier Device Package: PG-HDSOP-16-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
IPTC026N12NM6ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V Power Dissipation (Max): 3.8W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 169µA Supplier Device Package: PG-HDSOP-16-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
IPQC60R040S7AXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 790µA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V Qualification: AEC-Q101 |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
IPQC60R040S7AXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 790µA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V Qualification: AEC-Q101 |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
AUIRGSL4062D1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 102 ns Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A Supplier Device Package: TO-262 IGBT Type: Trench Td (on/off) @ 25°C: 19ns/90ns Switching Energy: 532µJ (on), 311µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 77 nC Current - Collector (Ic) (Max): 59 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 72 A Power - Max: 246 W |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
IRGS4062DTRLPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 89 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Td (on/off) @ 25°C: 41ns/104ns Switching Energy: 115µJ (on), 600µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 50 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 250 W |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
IR21091PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 150ns, 50ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.9V Current - Peak Output (Source, Sink): 200mA, 350mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
IRFZ44NSTRRPBF | Infineon Technologies |
![]() ![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
AUIRFZ44N | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
AUIRFZ44NS | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
IRGS4045DPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 74 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 27ns/75ns Switching Energy: 56µJ (on), 122µJ (off) Test Condition: 400V, 6A, 47Ohm, 15V Gate Charge: 19.5 nC Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 18 A Power - Max: 77 W |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
CY8C20336AN-24LQXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx6A Program Memory Type: FLASH (8kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 24-QFN (4x4) Number of I/O: 20 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
AUIRFZ48Z | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
IRF7458PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 16V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 10V, 16V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
IRF7805TRPBF | Infineon Technologies |
![]() ![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
IRF7805TRPBF | Infineon Technologies |
![]() ![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
AUIRFS4010-7TRL | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK (7-Lead) Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
S25FL256SDPMFV000 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 66 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
CY8C4247AZS-M485T | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFP Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 24x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Number of I/O: 51 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
|||||||||||||||
IRFP450PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
Produkt ist nicht verfügbar |
||||||||||||||||
![]() |
TLE82092EXUMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 8.6A Interface: SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.4V ~ 5.25V Technology: Power MOSFET Voltage - Load: 4.5V ~ 28V Supplier Device Package: PG-DSO-20-65 Motor Type - AC, DC: Brushed DC Grade: Automotive |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
IR2102PBF | Infineon Technologies |
![]() ![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 100ns, 50ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 210mA, 360mA DigiKey Programmable: Not Verified |
auf Bestellung 32855 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
IR2102PBF | Infineon Technologies |
![]() ![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 100ns, 50ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 210mA, 360mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
BTT60201ERAXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 20mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 7A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-14-11 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
KP276D1201XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Features: Temperature Compensated Package / Case: 8-SMD Module Output Type: SENT Mounting Type: Surface Mount Output: 12 b Operating Pressure: 1.45 ~ 58.02PSI (10kPa ~ 400kPa) Pressure Type: Absolute Accuracy: ±0.77% Operating Temperature: -40°C ~ 150°C Termination Style: SMD (SMT) Tab Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: PG-DSOF-8-162 Port Style: No Port Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
|||||||||||||||
CYT4DNJBMCQ1BZSGS | Infineon Technologies |
![]() Packaging: Tray Package / Case: 327-LFBGA Mounting Type: Surface Mount Speed: 100MHz, 320MHz Program Memory Size: 6.19MB (6.19M x 8) RAM Size: 640K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F Data Converters: A/D 48x12b SAR Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Supplier Device Package: 327-FBGA (17x17) Number of I/O: 168 |
Produkt ist nicht verfügbar |
||||||||||||||||
![]() |
DDB2U50N08W1R_B23 | Infineon Technologies |
![]() |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
|||||||||||||||
![]() |
BA 592 E6327 | Infineon Technologies |
![]() |
auf Bestellung 20519 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
BA595E6327HTSA1 | Infineon Technologies |
![]() |
auf Bestellung 14327 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||||
![]() |
BAR9002ELE6327XTMA1 | Infineon Technologies |
![]() |
auf Bestellung 26157 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BAR 81W H6327 | Infineon Technologies |
![]() |
auf Bestellung 8234 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
BA 592 E6433 | Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |
||||||||||||||||
![]() |
BAR 63-02V H6327 | Infineon Technologies |
![]() |
auf Bestellung 13265 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
BA 595 E6327 | Infineon Technologies |
![]() |
auf Bestellung 6730 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||||
![]() |
BAR 64-04 E6327 | Infineon Technologies |
![]() |
auf Bestellung 23605 Stücke: Lieferzeit 38-42 Tag (e) |
|
||||||||||||||
![]() |
BAR 88-02V H6327 | Infineon Technologies |
![]() |
auf Bestellung 3577 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
BAR 63-04 E6327 | Infineon Technologies |
![]() |
auf Bestellung 8192 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
![]() |
BAR8802VH6327XTSA1 | Infineon Technologies |
![]() |
auf Bestellung 17280 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BAT 18-04 E6327 | Infineon Technologies |
![]() |
auf Bestellung 10193 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BBY5602VH6327XTSA1 | Infineon Technologies |
![]() |
auf Bestellung 82425 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
BAR 61 E6327 | Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |
||||||||||||||||
![]() |
BAR6405WH6327XTSA1 | Infineon Technologies |
![]() |
auf Bestellung 23812 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BAR6404WH6327XTSA1 | Infineon Technologies |
![]() |
auf Bestellung 11154 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BAR 64-06W H6327 | Infineon Technologies |
![]() |
auf Bestellung 8268 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BAR6402ELE6327XTMA1 | Infineon Technologies |
![]() |
auf Bestellung 9595 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
BAR 63-06 E6327 | Infineon Technologies |
![]() |
auf Bestellung 5968 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
BAR 64-02EL E6327 | Infineon Technologies |
![]() |
auf Bestellung 14052 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
BAR 89-02LRH E6327 | Infineon Technologies |
![]() |
auf Bestellung 14999 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||||
BAR9002ELSE6327XTSA1 | Infineon Technologies |
![]() |
auf Bestellung 25460 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
BAR 64-02V H6327 | Infineon Technologies |
![]() |
auf Bestellung 10786 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
BAR 64-05 E6327 | Infineon Technologies |
![]() |
auf Bestellung 20413 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
![]() |
BAR 14-1 E6327 | Infineon Technologies |
![]() |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|||||||||||||||
![]() |
BAR 64-04W H6327 | Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
BAR 15-1 E6327 | Infineon Technologies |
![]() |
auf Bestellung 79 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
BAR 90-02EL E6327 | Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |
||||||||||||||||
![]() |
BAR6303WE6327HTSA1 | Infineon Technologies |
![]() |
auf Bestellung 6779 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BAR 64-05W H6327 | Infineon Technologies |
![]() |
auf Bestellung 2231 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BAR 63-04W H6327 | Infineon Technologies |
![]() |
auf Bestellung 13545 Stücke: Lieferzeit 10-14 Tag (e) |
|
IRF840PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
IPP011N03LF2SAKSA1 |
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 336 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 15 V
Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 336 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 15 V
Produkt ist nicht verfügbar
IPTC026N12NM6ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V
Power Dissipation (Max): 3.8W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 169µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V
Power Dissipation (Max): 3.8W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 169µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1800+ | 5.94 EUR |
IPTC026N12NM6ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V
Power Dissipation (Max): 3.8W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 169µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V
Power Dissipation (Max): 3.8W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 169µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.47 EUR |
10+ | 9.46 EUR |
25+ | 9.02 EUR |
100+ | 7.83 EUR |
250+ | 7.48 EUR |
500+ | 6.82 EUR |
IPQC60R040S7AXTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Qualification: AEC-Q101
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Qualification: AEC-Q101
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
750+ | 8.03 EUR |
IPQC60R040S7AXTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Qualification: AEC-Q101
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Qualification: AEC-Q101
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 12.74 EUR |
10+ | 10.92 EUR |
100+ | 9.1 EUR |
AUIRGSL4062D1 |
![]() |
Hersteller: Infineon Technologies
Description: IGBT 600V 59A 246W TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
Supplier Device Package: TO-262
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/90ns
Switching Energy: 532µJ (on), 311µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 246 W
Description: IGBT 600V 59A 246W TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
Supplier Device Package: TO-262
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/90ns
Switching Energy: 532µJ (on), 311µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 246 W
Produkt ist nicht verfügbar
IRGS4062DTRLPBF |
![]() |
Hersteller: Infineon Technologies
Description: IGBT DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
Description: IGBT DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
Produkt ist nicht verfügbar
IR21091PBF |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IRFZ44NSTRRPBF | ![]() |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Produkt ist nicht verfügbar
AUIRFZ44N |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 49A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Description: MOSFET N-CH 55V 49A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Produkt ist nicht verfügbar
AUIRFZ44NS |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Produkt ist nicht verfügbar
IRGS4045DPBF |
![]() |
Hersteller: Infineon Technologies
Description: IGBT 600V 12A 77W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 19.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
Description: IGBT 600V 12A 77W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 19.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
Produkt ist nicht verfügbar
CY8C20336AN-24LQXI |
![]() |
Hersteller: Infineon Technologies
Description: IC CAPSENCE 8K FLASH 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: IC CAPSENCE 8K FLASH 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
AUIRFZ48Z |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 61A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Description: MOSFET N-CH 55V 61A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Produkt ist nicht verfügbar
IRF7458PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 16V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V, 16V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 16V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V, 16V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
Produkt ist nicht verfügbar
IRF7805TRPBF | ![]() |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Description: MOSFET N-CH 30V 13A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Produkt ist nicht verfügbar
IRF7805TRPBF | ![]() |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Description: MOSFET N-CH 30V 13A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Produkt ist nicht verfügbar
AUIRFS4010-7TRL |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 190A D2PAK-7P
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V
Description: MOSFET N-CH 100V 190A D2PAK-7P
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V
Produkt ist nicht verfügbar
S25FL256SDPMFV000 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY8C4247AZS-M485T |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
Produkt ist nicht verfügbar
IRFP450PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 14A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 500V 14A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
TLE82092EXUMA2 |
![]() |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 4.4V-5.25V 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 8.6A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.4V ~ 5.25V
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 28V
Supplier Device Package: PG-DSO-20-65
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Description: IC MOTOR DRIVER 4.4V-5.25V 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 8.6A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.4V ~ 5.25V
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 28V
Supplier Device Package: PG-DSO-20-65
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Produkt ist nicht verfügbar
IR2102PBF | ![]() |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
auf Bestellung 32855 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
111+ | 4.37 EUR |
IR2102PBF | ![]() |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
BTT60201ERAXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.48 EUR |
10+ | 4.97 EUR |
25+ | 4.32 EUR |
100+ | 3.58 EUR |
250+ | 3.23 EUR |
500+ | 3.01 EUR |
1000+ | 2.83 EUR |
KP276D1201XTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: SENSOR 58.02PSIA 12BIT DSOF8
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: 8-SMD Module
Output Type: SENT
Mounting Type: Surface Mount
Output: 12 b
Operating Pressure: 1.45 ~ 58.02PSI (10kPa ~ 400kPa)
Pressure Type: Absolute
Accuracy: ±0.77%
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-162
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR 58.02PSIA 12BIT DSOF8
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: 8-SMD Module
Output Type: SENT
Mounting Type: Surface Mount
Output: 12 b
Operating Pressure: 1.45 ~ 58.02PSI (10kPa ~ 400kPa)
Pressure Type: Absolute
Accuracy: ±0.77%
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-162
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
CYT4DNJBMCQ1BZSGS |
![]() |
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Produkt ist nicht verfügbar
DDB2U50N08W1R_B23 |
![]() |
Hersteller: Infineon Technologies
Bridge Rectifiers Bridge Rectifier 600V
Bridge Rectifiers Bridge Rectifier 600V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)BA 592 E6327 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes PIN 35 V 100 mA
PIN Diodes PIN 35 V 100 mA
auf Bestellung 20519 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.72 EUR |
10+ | 0.48 EUR |
100+ | 0.23 EUR |
1000+ | 0.18 EUR |
3000+ | 0.15 EUR |
9000+ | 0.12 EUR |
BA595E6327HTSA1 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes Silicon PIN Diode 50V 100mA
PIN Diodes Silicon PIN Diode 50V 100mA
auf Bestellung 14327 Stücke:
Lieferzeit 10-14 Tag (e)BAR9002ELE6327XTMA1 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes RF DIODES
PIN Diodes RF DIODES
auf Bestellung 26157 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 0.41 EUR |
10+ | 0.29 EUR |
100+ | 0.17 EUR |
1000+ | 0.13 EUR |
2500+ | 0.1 EUR |
10000+ | 0.099 EUR |
15000+ | 0.095 EUR |
BAR 81W H6327 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes RF DIODE
PIN Diodes RF DIODE
auf Bestellung 8234 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.8 EUR |
10+ | 0.69 EUR |
100+ | 0.59 EUR |
500+ | 0.54 EUR |
1000+ | 0.44 EUR |
3000+ | 0.36 EUR |
BA 592 E6433 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes Silicon RF Switching Diode 35V 100mA
PIN Diodes Silicon RF Switching Diode 35V 100mA
Produkt ist nicht verfügbar
BAR 63-02V H6327 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes RF DIODE
PIN Diodes RF DIODE
auf Bestellung 13265 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 0.54 EUR |
10+ | 0.38 EUR |
100+ | 0.19 EUR |
1000+ | 0.12 EUR |
3000+ | 0.099 EUR |
9000+ | 0.081 EUR |
24000+ | 0.079 EUR |
BA 595 E6327 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes Silicon PIN Diode 50V 100mA
PIN Diodes Silicon PIN Diode 50V 100mA
auf Bestellung 6730 Stücke:
Lieferzeit 10-14 Tag (e)BAR 64-04 E6327 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes Silicon PIN Diode 150V 100mA
PIN Diodes Silicon PIN Diode 150V 100mA
auf Bestellung 23605 Stücke:
Lieferzeit 38-42 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 0.57 EUR |
10+ | 0.41 EUR |
100+ | 0.21 EUR |
1000+ | 0.12 EUR |
3000+ | 0.11 EUR |
9000+ | 0.086 EUR |
24000+ | 0.084 EUR |
BAR 88-02V H6327 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes RF DIODE
PIN Diodes RF DIODE
auf Bestellung 3577 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.88 EUR |
10+ | 0.67 EUR |
100+ | 0.42 EUR |
500+ | 0.28 EUR |
BAR 63-04 E6327 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes Silicon PIN Diodes
PIN Diodes Silicon PIN Diodes
auf Bestellung 8192 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.75 EUR |
10+ | 0.55 EUR |
100+ | 0.37 EUR |
500+ | 0.31 EUR |
1000+ | 0.22 EUR |
3000+ | 0.2 EUR |
9000+ | 0.19 EUR |
BAR8802VH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes RF DIODE
PIN Diodes RF DIODE
auf Bestellung 17280 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.88 EUR |
10+ | 0.67 EUR |
100+ | 0.42 EUR |
500+ | 0.28 EUR |
BAT 18-04 E6327 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes Silicon RF Switching Diode
PIN Diodes Silicon RF Switching Diode
auf Bestellung 10193 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.74 EUR |
10+ | 0.63 EUR |
100+ | 0.44 EUR |
500+ | 0.34 EUR |
1000+ | 0.28 EUR |
3000+ | 0.24 EUR |
9000+ | 0.22 EUR |
BBY5602VH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes RF DIODES
PIN Diodes RF DIODES
auf Bestellung 82425 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 0.54 EUR |
10+ | 0.45 EUR |
100+ | 0.3 EUR |
500+ | 0.26 EUR |
1000+ | 0.23 EUR |
3000+ | 0.21 EUR |
9000+ | 0.2 EUR |
BAR 61 E6327 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes Silicon PIN Diode 140mA
PIN Diodes Silicon PIN Diode 140mA
Produkt ist nicht verfügbar
BAR6405WH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes RF DIODE
PIN Diodes RF DIODE
auf Bestellung 23812 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 0.62 EUR |
10+ | 0.43 EUR |
100+ | 0.3 EUR |
500+ | 0.23 EUR |
1000+ | 0.19 EUR |
3000+ | 0.16 EUR |
9000+ | 0.14 EUR |
BAR6404WH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes RF DIODE
PIN Diodes RF DIODE
auf Bestellung 11154 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 0.36 EUR |
10+ | 0.29 EUR |
100+ | 0.21 EUR |
500+ | 0.18 EUR |
1000+ | 0.14 EUR |
BAR 64-06W H6327 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes RF DIODE
PIN Diodes RF DIODE
auf Bestellung 8268 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 0.62 EUR |
10+ | 0.46 EUR |
100+ | 0.29 EUR |
500+ | 0.26 EUR |
1000+ | 0.18 EUR |
3000+ | 0.14 EUR |
BAR6402ELE6327XTMA1 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes RF DIODES
PIN Diodes RF DIODES
auf Bestellung 9595 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 0.65 EUR |
10+ | 0.37 EUR |
100+ | 0.18 EUR |
1000+ | 0.13 EUR |
2500+ | 0.11 EUR |
10000+ | 0.1 EUR |
15000+ | 0.093 EUR |
BAR 63-06 E6327 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes Silicon PIN Diodes
PIN Diodes Silicon PIN Diodes
auf Bestellung 5968 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.75 EUR |
10+ | 0.56 EUR |
100+ | 0.36 EUR |
500+ | 0.31 EUR |
1000+ | 0.23 EUR |
3000+ | 0.2 EUR |
9000+ | 0.19 EUR |
BAR 64-02EL E6327 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes RF DIODES
PIN Diodes RF DIODES
auf Bestellung 14052 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 0.69 EUR |
10+ | 0.48 EUR |
100+ | 0.24 EUR |
1000+ | 0.15 EUR |
2500+ | 0.12 EUR |
10000+ | 0.1 EUR |
15000+ | 0.099 EUR |
BAR 89-02LRH E6327 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes Silicon PIN Diode
PIN Diodes Silicon PIN Diode
auf Bestellung 14999 Stücke:
Lieferzeit 10-14 Tag (e)BAR9002ELSE6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes Y
PIN Diodes Y
auf Bestellung 25460 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 0.23 EUR |
22+ | 0.13 EUR |
100+ | 0.11 EUR |
10000+ | 0.1 EUR |
15000+ | 0.099 EUR |
45000+ | 0.09 EUR |
BAR 64-02V H6327 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes RF DIODE
PIN Diodes RF DIODE
auf Bestellung 10786 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 0.57 EUR |
10+ | 0.4 EUR |
100+ | 0.2 EUR |
1000+ | 0.12 EUR |
3000+ | 0.1 EUR |
9000+ | 0.083 EUR |
45000+ | 0.069 EUR |
BAR 64-05 E6327 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes Silicon PIN Diode 150V 100mA
PIN Diodes Silicon PIN Diode 150V 100mA
auf Bestellung 20413 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 0.51 EUR |
10+ | 0.38 EUR |
100+ | 0.17 EUR |
1000+ | 0.13 EUR |
3000+ | 0.097 EUR |
9000+ | 0.093 EUR |
24000+ | 0.081 EUR |
BAR 14-1 E6327 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes PIN 100 V 140 mA
PIN Diodes PIN 100 V 140 mA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)BAR 15-1 E6327 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes PIN 100 V 140 mA
PIN Diodes PIN 100 V 140 mA
auf Bestellung 79 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.92 EUR |
10+ | 0.75 EUR |
100+ | 0.51 EUR |
500+ | 0.38 EUR |
BAR6303WE6327HTSA1 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes PIN 50 V 100 mA
PIN Diodes PIN 50 V 100 mA
auf Bestellung 6779 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 0.46 EUR |
10+ | 0.3 EUR |
100+ | 0.13 EUR |
1000+ | 0.099 EUR |
3000+ | 0.077 EUR |
BAR 64-05W H6327 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes RF DIODE
PIN Diodes RF DIODE
auf Bestellung 2231 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 0.62 EUR |
10+ | 0.48 EUR |
100+ | 0.29 EUR |
500+ | 0.27 EUR |
1000+ | 0.2 EUR |
3000+ | 0.17 EUR |
9000+ | 0.14 EUR |
BAR 63-04W H6327 |
![]() |
Hersteller: Infineon Technologies
PIN Diodes RF DIODE
PIN Diodes RF DIODE
auf Bestellung 13545 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.78 EUR |
10+ | 0.55 EUR |
100+ | 0.28 EUR |
1000+ | 0.17 EUR |
3000+ | 0.14 EUR |
9000+ | 0.12 EUR |
24000+ | 0.11 EUR |