Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (137773) > Seite 746 nach 2297
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TLE49614MXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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CY62128EV30LL-45SXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 32-SOIC (0.445", 11.30mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-SOIC Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY62128EV30LL-45SXIT | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 32-SOIC (0.445", 11.30mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-SOIC Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 694 Stücke: Lieferzeit 10-14 Tag (e) |
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CY62128DV30LL-70ZXI | Infineon Technologies |
![]() Packaging: Tube Package / Case: 32-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-TSOP I Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 891 Stücke: Lieferzeit 10-14 Tag (e) |
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CY62128DV30LL-70ZXI | Infineon Technologies |
![]() Packaging: Tube Package / Case: 32-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-TSOP I Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IM66D120AXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Output Type: Digital, PDM Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm) Sensitivity: -26dB ±1dB @ 94dB SPL Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 66dB Termination: Solder Pads Direction: Omnidirectional Port Location: Bottom Height (Max): 0.039" (0.99mm) Voltage - Rated: 1.8 V Current - Supply: 1.4 mA Voltage Range: 1.62 V ~ 3.6 V Frequency Range: 10 Hz ~ 10 kHz |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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IM66D120AXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Output Type: Digital, PDM Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm) Sensitivity: -26dB ±1dB @ 94dB SPL Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 66dB Termination: Solder Pads Direction: Omnidirectional Port Location: Bottom Height (Max): 0.039" (0.99mm) Voltage - Rated: 1.8 V Current - Supply: 1.4 mA Voltage Range: 1.62 V ~ 3.6 V Frequency Range: 10 Hz ~ 10 kHz |
auf Bestellung 5095 Stücke: Lieferzeit 10-14 Tag (e) |
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S6E2C39J0AGB1000A | Infineon Technologies |
![]() Packaging: Tray Package / Case: 192-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 1.5MB (1.5M x 8) RAM Size: 192K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 32x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB Peripherals: DMA, I2S, LVD, POR, PWM, WDT Supplier Device Package: 192-FBGA (12x12) Number of I/O: 152 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S6E2C38H0AGV2000A | Infineon Technologies |
![]() Packaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 1MB (1M x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 24x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Number of I/O: 120 DigiKey Programmable: Not Verified |
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IRFP460PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V |
Produkt ist nicht verfügbar |
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IPSA70R1K2P7SAKMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 400 V Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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62-0095PBF | Infineon Technologies |
![]() Packaging: Tube Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Power Dissipation (Max): 2W Vgs(th) (Max) @ Id: 2.55V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V |
Produkt ist nicht verfügbar |
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AUIRLZ44ZL | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V |
Produkt ist nicht verfügbar |
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D2200N24TVFXPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: DO-200AC, K-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 2200A Operating Temperature - Junction: -40°C ~ 160°C Voltage - DC Reverse (Vr) (Max): 2400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2000 A Current - Reverse Leakage @ Vr: 150 mA @ 2400 V |
Produkt ist nicht verfügbar |
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BSM15GD120DN2BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 25A 145W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 145 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 100 pF @ 25 V |
Produkt ist nicht verfügbar |
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IGB15N120S7ATMA1 | Infineon Technologies |
Description: IGBT TRENCH 1200V 34A TO263-3 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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BGSX24M2U16E6327XTSA1 | Infineon Technologies |
Description: ANTENNA DEVICES Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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AUIRFSL8408 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-262 Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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CY9BF365KPMC-G-JNE2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 160MHz Program Memory Size: 416KB (416K x 8) RAM Size: 48K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 8x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 48-LQFP (7x7) Number of I/O: 33 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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ROTATEKNOB3D2GOKITTOBO1 | Infineon Technologies |
![]() Packaging: Bulk For Use With/Related Products: 3D Magnetic Sensor Accessory Type: Knob |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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IRGP4760DPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 170 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 70ns/140ns Switching Energy: 1.7mJ (on), 1mJ (off) Test Condition: 400V, 48A, 10Ohm, 15V Gate Charge: 145 nC Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 144 A Power - Max: 325 W |
Produkt ist nicht verfügbar |
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IRGP4760-EPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 70ns/140ns Switching Energy: 1.7mJ (on), 1mJ (off) Test Condition: 400V, 48A, 10Ohm, 15V Gate Charge: 145 nC Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 144 A Power - Max: 325 W |
Produkt ist nicht verfügbar |
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IRGP4760PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 70ns/140ns Switching Energy: 1.7mJ (on), 1mJ (off) Test Condition: 400V, 48A, 10Ohm, 15V Gate Charge: 145 nC Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 144 A Power - Max: 325 W |
Produkt ist nicht verfügbar |
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BGS12WN6E6329XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Features: DC Blocked Package / Case: 6-XFDFN Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SPDT RF Type: Bluetooth, UWB, WiFi, WLAN Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Insertion Loss: 1.12dB Frequency Range: 50MHz ~ 9GHz Topology: Reflective Test Frequency: 9GHz Isolation: 22dB Supplier Device Package: PG-TSNP-6-2 IIP3: 70dBm |
Produkt ist nicht verfügbar |
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BGS12WN6E6329XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Features: DC Blocked Package / Case: 6-XFDFN Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SPDT RF Type: Bluetooth, UWB, WiFi, WLAN Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Insertion Loss: 1.12dB Frequency Range: 50MHz ~ 9GHz Topology: Reflective Test Frequency: 9GHz Isolation: 22dB Supplier Device Package: PG-TSNP-6-2 IIP3: 70dBm |
auf Bestellung 14571 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF830PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRG7PSH50UDPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-274AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 190 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: PG-TO274-3-903 IGBT Type: Trench Td (on/off) @ 25°C: 35ns/430ns Switching Energy: 3.6mJ (on), 2.2mJ (off) Test Condition: 600V, 50A, 5Ohm, 15V Gate Charge: 440 nC Current - Collector (Ic) (Max): 116 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 462 W |
Produkt ist nicht verfügbar |
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2ED3145MC12LXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 6A, 6.5A Technology: Capacitive Coupling Current - Output High, Low: 6A, 6.5A Voltage - Isolation: 5700Vrms Approval Agency: UL Supplier Device Package: PG-DSO-14-71 Rise / Fall Time (Typ): 20ns, 20ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 40ns, 40ns Number of Channels: 2 Voltage - Output Supply: 35V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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2ED3145MC12LXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 6A, 6.5A Technology: Capacitive Coupling Current - Output High, Low: 6A, 6.5A Voltage - Isolation: 5700Vrms Approval Agency: UL Supplier Device Package: PG-DSO-14-71 Rise / Fall Time (Typ): 20ns, 20ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 40ns, 40ns Number of Channels: 2 Voltage - Output Supply: 35V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C024-25JXC | Infineon Technologies |
![]() Packaging: Tube Package / Case: 84-LCC (J-Lead) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Dual Port, Asynchronous Memory Format: SRAM Supplier Device Package: 84-PLCC (29.31x29.31) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 25 ns Memory Organization: 4K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C0241-15AXC | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 72Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Dual Port, Asynchronous Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 4K x 18 DigiKey Programmable: Not Verified |
auf Bestellung 848 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C0241E-15AXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 72Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Dual Port, Asynchronous Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 4K x 18 DigiKey Programmable: Not Verified |
auf Bestellung 81 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C0241E-15AXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 72Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Dual Port, Asynchronous Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 4K x 18 DigiKey Programmable: Not Verified |
auf Bestellung 69 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C024-55AXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Dual Port, Asynchronous Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 4K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C024-25AXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Dual Port, Asynchronous Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 25 ns Memory Organization: 4K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C024-25AXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Dual Port, Asynchronous Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 25 ns Memory Organization: 4K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C0241-25AXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 72Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Dual Port, Asynchronous Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 25 ns Memory Organization: 4K x 18 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C024A-25JXC | Infineon Technologies |
![]() Packaging: Tube Package / Case: 84-LCC (J-Lead) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Dual Port, Asynchronous Memory Format: SRAM Supplier Device Package: 84-PLCC (29.31x29.31) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 25 ns Memory Organization: 4K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C0241-15AXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 72Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Dual Port, Asynchronous Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 4K x 18 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C024-55AC | Infineon Technologies |
![]() Packaging: Bag Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Dual Port, Asynchronous Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 4K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C024-15AC | Infineon Technologies |
![]() Packaging: Bag Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Dual Port, Asynchronous Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 4K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C024AV-25AC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Dual Port, Asynchronous Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 25 ns Memory Organization: 4K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C024AV-20AXCT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Dual Port, Asynchronous Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Write Cycle Time - Word, Page: 20ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 4K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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SKW07N120FKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A Supplier Device Package: PG-TO247-3-1 IGBT Type: NPT Td (on/off) @ 25°C: 27ns/440ns Switching Energy: 1mJ Test Condition: 800V, 8A, 47Ohm, 15V Gate Charge: 70 nC Current - Collector (Ic) (Max): 16.5 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 27 A Power - Max: 125 W |
auf Bestellung 1682 Stücke: Lieferzeit 10-14 Tag (e) |
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EVALISSI30R11HTOBO1 | Infineon Technologies |
![]() Packaging: Box Function: Isolator Type: Interface Utilized IC / Part: iSSI30R11H Supplied Contents: Board(s) Primary Attributes: 2.5V ~ 3.5V Input Voltage Embedded: No |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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CYAT81685-100AA71Z | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Interface: I2C, SPI Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Supplier Device Package: 100-TQFP (14x14) Touchscreen: 2 Wire Capacitive Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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AUIRFZ48N | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 40A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
Produkt ist nicht verfügbar |
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AUIRF9Z34N | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IRFB4127PBFXKMA1 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Tube |
Produkt ist nicht verfügbar |
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AUIRFZ24NSTRL | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V |
Produkt ist nicht verfügbar |
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BTS700201ESPXUMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 2.3mOhm Input Type: Non-Inverting Voltage - Load: 4.1V ~ 28V Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V Current - Output (Max): 23.2A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-24-32 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FF5MR20KM1HPHPSA1 | Infineon Technologies |
![]() Packaging: Tray |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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ADM8511X-CC-T-1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Function: Controller Interface: USB Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 3.6V Current - Supply: 150mA Protocol: Ethernet Standards: IEEE 802.3, 10/100 Base-T/TX PHY Supplier Device Package: PG-LQFP-100-1 DigiKey Programmable: Not Verified |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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ADM8511X-CC-T-1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Function: Controller Interface: USB Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 3.6V Current - Supply: 150mA Protocol: Ethernet Standards: IEEE 802.3, 10/100 Base-T/TX PHY Supplier Device Package: PG-LQFP-100-1 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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XC2365B40F80LAAKXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 320KB (320K x 8) RAM Size: 34K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-100-8 Number of I/O: 76 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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PSB 6970 HL V1.3 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Function: Ethernet Switch Controller Interface: TX / FX Voltage - Supply: 3.3V Supplier Device Package: PG-LQFP-100 Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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SAF-XE164HN-24F80L AA | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 192KB (192K x 8) RAM Size: 26K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-100-8 Number of I/O: 75 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IRS2003PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 70ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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AUIRFC8407TR | Infineon Technologies |
Description: AUTOMOTIVE POWER MOSFET Packaging: Bulk |
auf Bestellung 2064 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRL3705N | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE49614MXTMA1 |
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Hersteller: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Description: MAG SWITCH IC HALL EFF SOT23-3
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
CY62128EV30LL-45SXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY62128EV30LL-45SXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 694 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.46 EUR |
10+ | 5.86 EUR |
25+ | 5.73 EUR |
50+ | 5.7 EUR |
100+ | 5.11 EUR |
250+ | 5.09 EUR |
500+ | 4.9 EUR |
CY62128DV30LL-70ZXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 891 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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128+ | 3.81 EUR |
CY62128DV30LL-70ZXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IM66D120AXTMA1 |
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Hersteller: Infineon Technologies
Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 1.63 EUR |
IM66D120AXTMA1 |
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Hersteller: Infineon Technologies
Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
auf Bestellung 5095 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.7 EUR |
10+ | 3.32 EUR |
25+ | 3.13 EUR |
100+ | 2.67 EUR |
250+ | 2.5 EUR |
500+ | 2.19 EUR |
1000+ | 1.81 EUR |
2500+ | 1.69 EUR |
S6E2C39J0AGB1000A |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1.5MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
S6E2C38H0AGV2000A |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IRFP460PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
IPSA70R1K2P7SAKMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
Description: MOSFET N-CH 700V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)62-0095PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 10A/12A 8SOIC
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Description: MOSFET N-CH 20V 10A/12A 8SOIC
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Produkt ist nicht verfügbar
AUIRLZ44ZL |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Description: MOSFET N-CH 55V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Produkt ist nicht verfügbar
D2200N24TVFXPSA1 |
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Hersteller: Infineon Technologies
Description: DIODE GEN PURP 2.4KV 2200A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2200A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2000 A
Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
Description: DIODE GEN PURP 2.4KV 2200A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2200A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2000 A
Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
Produkt ist nicht verfügbar
BSM15GD120DN2BOSA1 |
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 25A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 100 pF @ 25 V
Description: IGBT MOD 1200V 25A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 100 pF @ 25 V
Produkt ist nicht verfügbar
IGB15N120S7ATMA1 |
Produkt ist nicht verfügbar
BGSX24M2U16E6327XTSA1 |
Produkt ist nicht verfügbar
AUIRFSL8408 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-262
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
Description: MOSFET N-CH 40V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-262
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
166+ | 2.93 EUR |
CY9BF365KPMC-G-JNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 416KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 416KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
ROTATEKNOB3D2GOKITTOBO1 |
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Hersteller: Infineon Technologies
Description: ROTATE & PUSH BUTTON CONTROL ELE
Packaging: Bulk
For Use With/Related Products: 3D Magnetic Sensor
Accessory Type: Knob
Description: ROTATE & PUSH BUTTON CONTROL ELE
Packaging: Bulk
For Use With/Related Products: 3D Magnetic Sensor
Accessory Type: Knob
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 46.73 EUR |
IRGP4760DPBF |
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Hersteller: Infineon Technologies
Description: IGBT 650V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
Description: IGBT 650V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
Produkt ist nicht verfügbar
IRGP4760-EPBF |
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Hersteller: Infineon Technologies
Description: IGBT 650V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
Description: IGBT 650V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
Produkt ist nicht verfügbar
IRGP4760PBF |
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Hersteller: Infineon Technologies
Description: IGBT 650V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
Description: IGBT 650V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
Produkt ist nicht verfügbar
BGS12WN6E6329XTSA1 |
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Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 9GHZ CELL WIFI
Packaging: Tape & Reel (TR)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: Bluetooth, UWB, WiFi, WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Topology: Reflective
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-2
IIP3: 70dBm
Description: IC RF SWITCH SPDT 9GHZ CELL WIFI
Packaging: Tape & Reel (TR)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: Bluetooth, UWB, WiFi, WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Topology: Reflective
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-2
IIP3: 70dBm
Produkt ist nicht verfügbar
BGS12WN6E6329XTSA1 |
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Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 9GHZ CELL WIFI
Packaging: Cut Tape (CT)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: Bluetooth, UWB, WiFi, WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Topology: Reflective
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-2
IIP3: 70dBm
Description: IC RF SWITCH SPDT 9GHZ CELL WIFI
Packaging: Cut Tape (CT)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: Bluetooth, UWB, WiFi, WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Topology: Reflective
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-2
IIP3: 70dBm
auf Bestellung 14571 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.72 EUR |
29+ | 0.62 EUR |
31+ | 0.58 EUR |
100+ | 0.46 EUR |
250+ | 0.43 EUR |
500+ | 0.36 EUR |
1000+ | 0.28 EUR |
2500+ | 0.26 EUR |
5000+ | 0.24 EUR |
IRF830PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 4.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
Description: MOSFET N-CH 500V 4.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
Produkt ist nicht verfügbar
IRG7PSH50UDPBF |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 116A TO274
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 190 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO274-3-903
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/430ns
Switching Energy: 3.6mJ (on), 2.2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 440 nC
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 462 W
Description: IGBT TRENCH 1200V 116A TO274
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 190 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO274-3-903
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/430ns
Switching Energy: 3.6mJ (on), 2.2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 440 nC
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 462 W
Produkt ist nicht verfügbar
2ED3145MC12LXUMA1 |
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Hersteller: Infineon Technologies
Description: 2ED3145MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
Description: 2ED3145MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 2.11 EUR |
2ED3145MC12LXUMA1 |
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Hersteller: Infineon Technologies
Description: 2ED3145MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
Description: 2ED3145MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.29 EUR |
10+ | 3.85 EUR |
25+ | 3.63 EUR |
100+ | 3.09 EUR |
250+ | 2.9 EUR |
500+ | 2.54 EUR |
CY7C024-25JXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 84-PLCC (29.31x29.31)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 64KBIT PARALLEL 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 84-PLCC (29.31x29.31)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY7C0241-15AXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
auf Bestellung 848 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 27.95 EUR |
CY7C0241E-15AXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
auf Bestellung 81 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 26.1 EUR |
10+ | 24.16 EUR |
25+ | 23.83 EUR |
40+ | 23.53 EUR |
CY7C0241E-15AXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
auf Bestellung 69 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 26.1 EUR |
10+ | 24.16 EUR |
25+ | 23.83 EUR |
40+ | 23.53 EUR |
CY7C024-55AXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY7C024-25AXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY7C024-25AXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY7C0241-25AXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY7C024A-25JXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 84-PLCC (29.31x29.31)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 64KBIT PARALLEL 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 84-PLCC (29.31x29.31)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY7C0241-15AXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY7C024-55AC |
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Hersteller: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY7C024-15AC |
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Hersteller: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY7C024AV-25AC |
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Hersteller: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY7C024AV-20AXCT |
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Hersteller: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
SKW07N120FKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT 1200V 16.5A 125W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 27ns/440ns
Switching Energy: 1mJ
Test Condition: 800V, 8A, 47Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 16.5 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 125 W
Description: IGBT 1200V 16.5A 125W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 27ns/440ns
Switching Energy: 1mJ
Test Condition: 800V, 8A, 47Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 16.5 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 125 W
auf Bestellung 1682 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
79+ | 6.2 EUR |
EVALISSI30R11HTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ISSI30R11H
Packaging: Box
Function: Isolator
Type: Interface
Utilized IC / Part: iSSI30R11H
Supplied Contents: Board(s)
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
Description: EVAL BOARD FOR ISSI30R11H
Packaging: Box
Function: Isolator
Type: Interface
Utilized IC / Part: iSSI30R11H
Supplied Contents: Board(s)
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 292.34 EUR |
CYAT81685-100AA71Z |
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Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
AUIRFZ48N |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 69A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Description: MOSFET N-CH 55V 69A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
AUIRF9Z34N |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 55V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IRFB4127PBFXKMA1 |
Produkt ist nicht verfügbar
AUIRFZ24NSTRL |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Produkt ist nicht verfügbar
BTS700201ESPXUMA2 |
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Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-24
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.3mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 23.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
Description: PROFET PG-TSDSO-24
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.3mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 23.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.47 EUR |
10+ | 5.66 EUR |
25+ | 4.94 EUR |
100+ | 4.12 EUR |
250+ | 3.72 EUR |
500+ | 3.48 EUR |
1000+ | 3.28 EUR |
FF5MR20KM1HPHPSA1 |
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auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 649.6 EUR |
ADM8511X-CC-T-1 |
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Hersteller: Infineon Technologies
Description: IC ETHERNET USB NETWORK 100-LQFP
Packaging: Tray
Package / Case: 100-LQFP
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 150mA
Protocol: Ethernet
Standards: IEEE 802.3, 10/100 Base-T/TX PHY
Supplier Device Package: PG-LQFP-100-1
DigiKey Programmable: Not Verified
Description: IC ETHERNET USB NETWORK 100-LQFP
Packaging: Tray
Package / Case: 100-LQFP
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 150mA
Protocol: Ethernet
Standards: IEEE 802.3, 10/100 Base-T/TX PHY
Supplier Device Package: PG-LQFP-100-1
DigiKey Programmable: Not Verified
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 6.46 EUR |
ADM8511X-CC-T-1 |
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Hersteller: Infineon Technologies
Description: IC ETHERNET USB NETWORK 100-LQFP
Packaging: Tray
Package / Case: 100-LQFP
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 150mA
Protocol: Ethernet
Standards: IEEE 802.3, 10/100 Base-T/TX PHY
Supplier Device Package: PG-LQFP-100-1
DigiKey Programmable: Not Verified
Description: IC ETHERNET USB NETWORK 100-LQFP
Packaging: Tray
Package / Case: 100-LQFP
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 150mA
Protocol: Ethernet
Standards: IEEE 802.3, 10/100 Base-T/TX PHY
Supplier Device Package: PG-LQFP-100-1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
XC2365B40F80LAAKXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
PSB 6970 HL V1.3 |
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Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE LQFP-100
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Function: Ethernet Switch Controller
Interface: TX / FX
Voltage - Supply: 3.3V
Supplier Device Package: PG-LQFP-100
Number of Circuits: 1
Description: IC TELECOM INTERFACE LQFP-100
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Function: Ethernet Switch Controller
Interface: TX / FX
Voltage - Supply: 3.3V
Supplier Device Package: PG-LQFP-100
Number of Circuits: 1
Produkt ist nicht verfügbar
SAF-XE164HN-24F80L AA |
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Hersteller: Infineon Technologies
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IRS2003PBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
AUIRFC8407TR |
auf Bestellung 2064 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
533+ | 0.91 EUR |
AUIRL3705N |
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Hersteller: Infineon Technologies
Description: AUIRL3705 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Description: AUIRL3705 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
199+ | 2.44 EUR |