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62-0095PBF Infineon Technologies

fundamentals-of-power-semiconductors Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 10A/12A 8SOIC
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
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Technische Details 62-0095PBF Infineon Technologies

Description: MOSFET N-CH 20V 10A/12A 8SOIC, Packaging: Tube, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc), Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V, Power Dissipation (Max): 2W, Vgs(th) (Max) @ Id: 2.55V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V.