Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (137773) > Seite 744 nach 2297
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IR2106PBF | Infineon Technologies |
![]() ![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 150ns, 50ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.9V Current - Peak Output (Source, Sink): 200mA, 350mA DigiKey Programmable: Not Verified |
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CY9AFA41NBPQC-G-JNE2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 96KB (96K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 24x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, I2C, UART/USART Peripherals: DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 100-PQFP (14x20) Number of I/O: 83 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY9AFA42NBPQC-G-JNE2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 160KB (160K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 24x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, I2C, UART/USART Peripherals: DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 100-PQFP (14x20) Number of I/O: 83 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY9AFA44NBPQC-G-JNE2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 24x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, I2C, UART/USART Peripherals: DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 100-PQFP (14x20) Number of I/O: 83 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY9AFA41NAPQC-G-JNE2 | Infineon Technologies |
Description: MULTI-MARKET MCUS Packaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 96KB (96K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 24x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART Peripherals: DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 100-QFP (14x20) Number of I/O: 83 |
Produkt ist nicht verfügbar |
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CY15V108QN-40BFXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-UFLGA Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 1.89V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 40 MHz Memory Format: FRAM Supplier Device Package: 8-UFLGA (3.28x3.23) Memory Interface: SPI Access Time: 9 ns Memory Organization: 1M x 8 |
Produkt ist nicht verfügbar |
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CY15V108QN-40BFXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 8-UFLGA Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 1.89V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 40 MHz Memory Format: FRAM Supplier Device Package: 8-UFLGA (3.28x3.23) Memory Interface: SPI Access Time: 9 ns Memory Organization: 1M x 8 |
Produkt ist nicht verfügbar |
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CY15V116QN-40BKXIT | Infineon Technologies |
Description: IC FRAM 16MBIT SPI 24FBGA Packaging: Tape & Reel (TR) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 1.89V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 40 MHz Memory Format: FRAM Supplier Device Package: 24-FBGA (6x8) Memory Interface: SPI Access Time: 9 ns Memory Organization: 2M x 8 |
Produkt ist nicht verfügbar |
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CY15B116QN-40BKXAT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 40 MHz Memory Format: FRAM Supplier Device Package: 24-FBGA (6x8) Memory Interface: SPI Access Time: 9 ns Memory Organization: 2M x 8 |
Produkt ist nicht verfügbar |
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CY15B116QN-40BKXA | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 40 MHz Memory Format: FRAM Supplier Device Package: 24-FBGA (6x8) Memory Interface: SPI Access Time: 9 ns Memory Organization: 2M x 8 |
Produkt ist nicht verfügbar |
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CY15V116QN-40BKXAT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 1.89V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 40 MHz Memory Format: FRAM Supplier Device Package: 24-FBGA (6x8) Memory Interface: SPI Access Time: 9 ns Memory Organization: 2M x 8 |
Produkt ist nicht verfügbar |
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CY15V116QN-40BKXA | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 1.89V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 40 MHz Memory Format: FRAM Supplier Device Package: 24-FBGA (6x8) Memory Interface: SPI Access Time: 9 ns Memory Organization: 2M x 8 |
Produkt ist nicht verfügbar |
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CYT3DLABFBQ1AESGST | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPH Packaging: Tape & Reel (TR) Package / Case: 216-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 100MHz, 240MHz Program Memory Size: 4.06MB (4.06M x 8) RAM Size: 384K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F Data Converters: A/D 48x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Supplier Device Package: 216-TEQFP (24x24) Number of I/O: 108 |
Produkt ist nicht verfügbar |
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CYT3DLABFBQ1AESGS | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPH Packaging: Tray Package / Case: 216-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 100MHz, 240MHz Program Memory Size: 4.06MB (4.06M x 8) RAM Size: 384K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F Data Converters: A/D 48x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Supplier Device Package: 216-TEQFP (24x24) Number of I/O: 108 |
Produkt ist nicht verfügbar |
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CYT3DLABHBQ1AESGST | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPH Packaging: Tray Package / Case: 216-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 100MHz, 240MHz Program Memory Size: 4.06MB (4.06M x 8) RAM Size: 384K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F Data Converters: A/D 48x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Supplier Device Package: 216-TEQFP (24x24) Number of I/O: 108 |
Produkt ist nicht verfügbar |
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IRF2805PBF | Infineon Technologies |
![]() ![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 104A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V |
auf Bestellung 6937 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRL1404ZSTRL | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRL1404ZSTRL | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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A2C00568300 | Infineon Technologies |
Description: IC MCU 32BIT LQFP Packaging: Tray DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C1021DV33-10BVXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 64K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C1021DV33-10BVXIT | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 64K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 1961 Stücke: Lieferzeit 10-14 Tag (e) |
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CY14B101NA-ZS45XIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 64K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY14B101NA-ZS45XIT | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 64K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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IR21363SPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 12V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 125ns, 50ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 200mA, 350mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IR21365SPbF | Infineon Technologies |
![]() Packaging: Tube Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 12V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 125ns, 50ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 200mA, 350mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IR2136JPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: 44-LCC (J-Lead), 32 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58) Rise / Fall Time (Typ): 125ns, 50ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 200mA, 350mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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AUIRF1404ZS | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V |
Produkt ist nicht verfügbar |
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TC337LP32F300SAALXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 292LFBGA Packaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 300MHz Program Memory Size: 2MB (2M x 8) RAM Size: 248K x 8 Operating Temperature: -40°C ~ 150°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: TriCore™ Data Converters: A/D 48 SAR Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V Connectivity: DMA, I2S, PWM, WDT Peripherals: DMA, I2S, PWM, WDT Supplier Device Package: PG-LFBGA-292-11 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S29GL01GS11FHI020 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified |
auf Bestellung 958 Stücke: Lieferzeit 10-14 Tag (e) |
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IRG4RC20FTRLPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Supplier Device Package: TO-252AA (DPAK) Td (on/off) @ 25°C: 26ns/194ns Switching Energy: 190µJ (on), 920µJ (off) Test Condition: 480V, 12A, 50Ohm, 15V Gate Charge: 27 nC Current - Collector (Ic) (Max): 22 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 44 A Power - Max: 66 W |
Produkt ist nicht verfügbar |
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IRG4RC20FTRLPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Supplier Device Package: TO-252AA (DPAK) Td (on/off) @ 25°C: 26ns/194ns Switching Energy: 190µJ (on), 920µJ (off) Test Condition: 480V, 12A, 50Ohm, 15V Gate Charge: 27 nC Current - Collector (Ic) (Max): 22 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 44 A Power - Max: 66 W |
Produkt ist nicht verfügbar |
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IRG4RC20FPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Supplier Device Package: TO-252AA (DPAK) Td (on/off) @ 25°C: 26ns/194ns Switching Energy: 190µJ (on), 920µJ (off) Test Condition: 480V, 12A, 50Ohm, 15V Gate Charge: 27 nC Current - Collector (Ic) (Max): 22 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 44 A Power - Max: 66 W |
Produkt ist nicht verfügbar |
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IRG4RC20FTRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Supplier Device Package: TO-252AA (DPAK) Td (on/off) @ 25°C: 26ns/194ns Switching Energy: 190µJ (on), 920µJ (off) Test Condition: 480V, 12A, 50Ohm, 15V Gate Charge: 27 nC Current - Collector (Ic) (Max): 22 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 44 A Power - Max: 66 W |
Produkt ist nicht verfügbar |
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2EDN7523RXUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Inverting Supplier Device Package: PG-TSSOP-8 Rise / Fall Time (Typ): 5.3ns, 4.5ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 5A, 5A DigiKey Programmable: Not Verified |
auf Bestellung 35830 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4147LQE-S473 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 24MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b, 20x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT Supplier Device Package: 40-QFN (6x6) Grade: Automotive Number of I/O: 34 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
auf Bestellung 458 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1069G30-10ZSXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 54-TSOP II Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 568 Stücke: Lieferzeit 10-14 Tag (e) |
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IR2117PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 80ns, 40ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 250mA, 500mA DigiKey Programmable: Not Verified |
auf Bestellung 2820 Stücke: Lieferzeit 10-14 Tag (e) |
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CYONSFN3050A-XF07 | Infineon Technologies |
Description: Laser Navigation Sensors Packaging: Bulk |
Produkt ist nicht verfügbar |
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IR2304PBF | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 200ns, 100ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.3V Current - Peak Output (Source, Sink): 60mA, 130mA DigiKey Programmable: Not Verified |
auf Bestellung 9656 Stücke: Lieferzeit 10-14 Tag (e) |
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IR2304PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 200ns, 100ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.3V Current - Peak Output (Source, Sink): 60mA, 130mA DigiKey Programmable: Not Verified |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF3205 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V |
auf Bestellung 995 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1318CV18-250BZXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II Clock Frequency: 250 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IPU60R1K4C6AKMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V Power Dissipation (Max): 28.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V |
Produkt ist nicht verfügbar |
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CY8C4146AZI-S423 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Number of I/O: 36 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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TLE4262GMXUMA2 | Infineon Technologies |
Description: IC REG LINEAR 5V 200MA DSO14 Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 50 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-14 Voltage - Output (Min/Fixed): 5V Control Features: Reset Grade: Automotive PSRR: 54dB (100Hz) Voltage Dropout (Max): 0.5V @ 150mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 23 mA Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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CY15B256Q-SXET | Infineon Technologies |
Description: IC FRAM 256KBIT SPI 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 33 MHz Memory Format: FRAM Supplier Device Package: 8-SOIC Memory Interface: SPI Access Time: 9 ns Memory Organization: 32K x 8 |
Produkt ist nicht verfügbar |
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AUIRF3504 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 52A, 10V Power Dissipation (Max): 143W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V |
Produkt ist nicht verfügbar |
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S25FL128SAGNFV003 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S25FL128SAGNFV003 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 2495 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FL128SAGMFV010 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Verified |
auf Bestellung 2395 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF3205ZS | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V |
Produkt ist nicht verfügbar |
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AUIRG4BC30USTRL | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 17ns/78ns Switching Energy: 160µJ (on), 200µJ (off) Test Condition: 480V, 12A, 23Ohm, 15V Gate Charge: 50 nC Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 92 A Power - Max: 100 W |
Produkt ist nicht verfügbar |
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CY7C63801-SXC | Infineon Technologies |
![]() Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Function: Controller Interface: GPIO, SPI Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4V ~ 5.5V Current - Supply: 40mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 16-SOIC DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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AUIRL1404Z | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V |
Produkt ist nicht verfügbar |
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AUIRL1404ZS | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V |
Produkt ist nicht verfügbar |
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AUIRFS4410Z | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V |
Produkt ist nicht verfügbar |
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S79FL256SDSMFBG03 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Grade: Automotive Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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IRFR420TRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
Produkt ist nicht verfügbar |
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BSO301SPNTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-DSO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V |
Produkt ist nicht verfügbar |
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TC1724N192F80HRACKXUMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 1.5MB (1.5M x 8) RAM Size: 152K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 4x10b, 24x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 3.63V Connectivity: ASC, CANbus, MLI, MSC, SSC Peripherals: DMA, POR, WDT Supplier Device Package: PG-LQFP-144-17 Number of I/O: 95 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
IR2106PBF | ![]() |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY9AFA41NBPQC-G-JNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 96KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY9AFA42NBPQC-G-JNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 160KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY9AFA44NBPQC-G-JNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY9AFA41NAPQC-G-JNE2 |
Hersteller: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
Produkt ist nicht verfügbar
CY15V108QN-40BFXIT |
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Hersteller: Infineon Technologies
Description: IC FRAM 8MBIT SPI 8UFLGA
Packaging: Tape & Reel (TR)
Package / Case: 8-UFLGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-UFLGA (3.28x3.23)
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 1M x 8
Description: IC FRAM 8MBIT SPI 8UFLGA
Packaging: Tape & Reel (TR)
Package / Case: 8-UFLGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-UFLGA (3.28x3.23)
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 1M x 8
Produkt ist nicht verfügbar
CY15V108QN-40BFXI |
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Hersteller: Infineon Technologies
Description: IC FRAM 8MBIT SPI 8UFLGA
Packaging: Tray
Package / Case: 8-UFLGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-UFLGA (3.28x3.23)
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 1M x 8
Description: IC FRAM 8MBIT SPI 8UFLGA
Packaging: Tray
Package / Case: 8-UFLGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-UFLGA (3.28x3.23)
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 1M x 8
Produkt ist nicht verfügbar
CY15V116QN-40BKXIT |
Hersteller: Infineon Technologies
Description: IC FRAM 16MBIT SPI 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 2M x 8
Description: IC FRAM 16MBIT SPI 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 2M x 8
Produkt ist nicht verfügbar
CY15B116QN-40BKXAT |
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Hersteller: Infineon Technologies
Description: IC FRAM 16MBIT SPI 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 2M x 8
Description: IC FRAM 16MBIT SPI 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 2M x 8
Produkt ist nicht verfügbar
CY15B116QN-40BKXA |
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Hersteller: Infineon Technologies
Description: IC FRAM 16MBIT SPI 24FBGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 2M x 8
Description: IC FRAM 16MBIT SPI 24FBGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 2M x 8
Produkt ist nicht verfügbar
CY15V116QN-40BKXAT |
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Hersteller: Infineon Technologies
Description: IC FRAM 16MBIT SPI 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 2M x 8
Description: IC FRAM 16MBIT SPI 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 2M x 8
Produkt ist nicht verfügbar
CY15V116QN-40BKXA |
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Hersteller: Infineon Technologies
Description: IC FRAM 16MBIT SPI 24FBGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 2M x 8
Description: IC FRAM 16MBIT SPI 24FBGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 2M x 8
Produkt ist nicht verfügbar
CYT3DLABFBQ1AESGST |
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 240MHz
Program Memory Size: 4.06MB (4.06M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 240MHz
Program Memory Size: 4.06MB (4.06M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
Produkt ist nicht verfügbar
CYT3DLABFBQ1AESGS |
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 240MHz
Program Memory Size: 4.06MB (4.06M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 240MHz
Program Memory Size: 4.06MB (4.06M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
Produkt ist nicht verfügbar
CYT3DLABHBQ1AESGST |
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 240MHz
Program Memory Size: 4.06MB (4.06M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 240MHz
Program Memory Size: 4.06MB (4.06M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
Produkt ist nicht verfügbar
IRF2805PBF | ![]() |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 104A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 104A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
auf Bestellung 6937 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.9 EUR |
50+ | 2.33 EUR |
100+ | 1.92 EUR |
500+ | 1.73 EUR |
AUIRL1404ZSTRL |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
800+ | 3.73 EUR |
AUIRL1404ZSTRL |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.99 EUR |
10+ | 5.29 EUR |
100+ | 3.77 EUR |
A2C00568300 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY7C1021DV33-10BVXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY7C1021DV33-10BVXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1961 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.59 EUR |
10+ | 7.83 EUR |
25+ | 7.68 EUR |
50+ | 7.62 EUR |
100+ | 6.84 EUR |
250+ | 6.82 EUR |
500+ | 6.39 EUR |
1000+ | 6.12 EUR |
CY14B101NA-ZS45XIT |
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Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY14B101NA-ZS45XIT |
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Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 51.08 EUR |
10+ | 48.02 EUR |
25+ | 46.35 EUR |
50+ | 44.89 EUR |
100+ | 39.51 EUR |
250+ | 38.45 EUR |
IR21363SPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IR21365SPbF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IR2136JPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
AUIRF1404ZS |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Produkt ist nicht verfügbar
TC337LP32F300SAALXUMA1 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 248K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 48 SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 248K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 48 SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
S29GL01GS11FHI020 |
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Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
auf Bestellung 958 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 16.71 EUR |
IRG4RC20FTRLPBF |
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Hersteller: Infineon Technologies
Description: IGBT 600V 22A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 26ns/194ns
Switching Energy: 190µJ (on), 920µJ (off)
Test Condition: 480V, 12A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 44 A
Power - Max: 66 W
Description: IGBT 600V 22A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 26ns/194ns
Switching Energy: 190µJ (on), 920µJ (off)
Test Condition: 480V, 12A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 44 A
Power - Max: 66 W
Produkt ist nicht verfügbar
IRG4RC20FTRLPBF |
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Hersteller: Infineon Technologies
Description: IGBT 600V 22A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 26ns/194ns
Switching Energy: 190µJ (on), 920µJ (off)
Test Condition: 480V, 12A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 44 A
Power - Max: 66 W
Description: IGBT 600V 22A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 26ns/194ns
Switching Energy: 190µJ (on), 920µJ (off)
Test Condition: 480V, 12A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 44 A
Power - Max: 66 W
Produkt ist nicht verfügbar
IRG4RC20FPBF |
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Hersteller: Infineon Technologies
Description: IGBT 600V 22A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 26ns/194ns
Switching Energy: 190µJ (on), 920µJ (off)
Test Condition: 480V, 12A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 44 A
Power - Max: 66 W
Description: IGBT 600V 22A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 26ns/194ns
Switching Energy: 190µJ (on), 920µJ (off)
Test Condition: 480V, 12A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 44 A
Power - Max: 66 W
Produkt ist nicht verfügbar
IRG4RC20FTRPBF |
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Hersteller: Infineon Technologies
Description: IGBT 600V 22A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 26ns/194ns
Switching Energy: 190µJ (on), 920µJ (off)
Test Condition: 480V, 12A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 44 A
Power - Max: 66 W
Description: IGBT 600V 22A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 26ns/194ns
Switching Energy: 190µJ (on), 920µJ (off)
Test Condition: 480V, 12A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 44 A
Power - Max: 66 W
Produkt ist nicht verfügbar
2EDN7523RXUMA1 |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
auf Bestellung 35830 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
417+ | 1.17 EUR |
CY8C4147LQE-S473 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 458 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 16.1 EUR |
10+ | 14.56 EUR |
25+ | 13.88 EUR |
80+ | 12.05 EUR |
230+ | 11.51 EUR |
CY7C1069G30-10ZSXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 54TSOP
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 16MBIT PARALLEL 54TSOP
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
auf Bestellung 568 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 84.36 EUR |
10+ | 78.24 EUR |
25+ | 75.44 EUR |
40+ | 73.56 EUR |
108+ | 64.46 EUR |
IR2117PBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 2820 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.7 EUR |
10+ | 5.12 EUR |
50+ | 4.84 EUR |
100+ | 4.19 EUR |
250+ | 3.98 EUR |
500+ | 3.57 EUR |
1000+ | 3.01 EUR |
2500+ | 2.86 EUR |
CYONSFN3050A-XF07 |
Produkt ist nicht verfügbar
IR2304PBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 60mA, 130mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 60mA, 130mA
DigiKey Programmable: Not Verified
auf Bestellung 9656 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
222+ | 2.19 EUR |
IR2304PBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 60mA, 130mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 60mA, 130mA
DigiKey Programmable: Not Verified
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)AUIRF3205 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 5.95 EUR |
50+ | 4.71 EUR |
100+ | 4.04 EUR |
500+ | 3.59 EUR |
CY7C1318CV18-250BZXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IPU60R1K4C6AKMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Description: MOSFET N-CH 600V 3.2A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Produkt ist nicht verfügbar
CY8C4146AZI-S423 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
TLE4262GMXUMA2 |
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 200MA DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 200MA DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
CY15B256Q-SXET |
Hersteller: Infineon Technologies
Description: IC FRAM 256KBIT SPI 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 33 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 32K x 8
Description: IC FRAM 256KBIT SPI 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 33 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 32K x 8
Produkt ist nicht verfügbar
AUIRF3504 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 87A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 52A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Description: MOSFET N-CH 40V 87A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 52A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Produkt ist nicht verfügbar
S25FL128SAGNFV003 |
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Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
S25FL128SAGNFV003 |
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Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2495 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.39 EUR |
10+ | 6.71 EUR |
25+ | 6.57 EUR |
50+ | 6.53 EUR |
100+ | 5.86 EUR |
250+ | 5.84 EUR |
500+ | 5.62 EUR |
1000+ | 5.35 EUR |
S25FL128SAGMFV010 |
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Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Verified
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Verified
auf Bestellung 2395 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.39 EUR |
10+ | 6.71 EUR |
25+ | 6.57 EUR |
40+ | 6.53 EUR |
80+ | 5.86 EUR |
240+ | 5.84 EUR |
480+ | 5.62 EUR |
960+ | 5.35 EUR |
AUIRF3205ZS |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Produkt ist nicht verfügbar
AUIRG4BC30USTRL |
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Hersteller: Infineon Technologies
Description: IGBT 600V 23A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
Description: IGBT 600V 23A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
Produkt ist nicht verfügbar
CY7C63801-SXC |
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Hersteller: Infineon Technologies
Description: IC USB PERIPHERAL CTRLR 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 16-SOIC
DigiKey Programmable: Not Verified
Description: IC USB PERIPHERAL CTRLR 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 16-SOIC
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
AUIRL1404Z |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Description: MOSFET N-CH 40V 160A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Produkt ist nicht verfügbar
AUIRL1404ZS |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Produkt ist nicht verfügbar
AUIRFS4410Z |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 97A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
Description: MOSFET N-CH 100V 97A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
Produkt ist nicht verfügbar
S79FL256SDSMFBG03 |
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Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
IRFR420TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 2.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Description: MOSFET N-CH 500V 2.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Produkt ist nicht verfügbar
BSO301SPNTMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 12.6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Description: MOSFET P-CH 30V 12.6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Produkt ist nicht verfügbar
TC1724N192F80HRACKXUMA2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 152K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 4x10b, 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 3.63V
Connectivity: ASC, CANbus, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-144-17
Number of I/O: 95
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 152K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 4x10b, 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 3.63V
Connectivity: ASC, CANbus, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-144-17
Number of I/O: 95
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar