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IPTC026N12NM6ATMA1

IPTC026N12NM6ATMA1 Infineon Technologies

Infineon-IPTC026N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35cc74f919ef Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V
Power Dissipation (Max): 3.8W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 169µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+5.94 EUR
Mindestbestellmenge: 1800
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Technische Details IPTC026N12NM6ATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V, Power Dissipation (Max): 3.8W (Ta), 278W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 169µA, Supplier Device Package: PG-HDSOP-16-2, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V.

Weitere Produktangebote IPTC026N12NM6ATMA1 nach Preis ab 6.2 EUR bis 10.47 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPTC026N12NM6ATMA1 IPTC026N12NM6ATMA1 Hersteller : Infineon Technologies Infineon_IPTC026N12NM6_DataSheet_v02_00_EN-3398041.pdf MOSFETs N
auf Bestellung 749 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.21 EUR
10+ 8.98 EUR
25+ 8.32 EUR
100+ 7.44 EUR
250+ 7.06 EUR
500+ 6.53 EUR
1000+ 6.2 EUR
IPTC026N12NM6ATMA1 IPTC026N12NM6ATMA1 Hersteller : Infineon Technologies Infineon-IPTC026N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35cc74f919ef Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V
Power Dissipation (Max): 3.8W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 169µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.47 EUR
10+ 9.46 EUR
25+ 9.02 EUR
100+ 7.83 EUR
250+ 7.48 EUR
500+ 6.82 EUR
Mindestbestellmenge: 2
IPTC026N12NM6ATMA1 Hersteller : Infineon Technologies infineon-iptc026n12nm6-datasheet-v02_00-en.pdf N-Channel MOSFET
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