Technische Details IRGS4045DPBF Infineon / IR
Description: IGBT 600V 12A 77W D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 74 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 27ns/75ns, Switching Energy: 56µJ (on), 122µJ (off), Test Condition: 400V, 6A, 47Ohm, 15V, Gate Charge: 19.5 nC, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 18 A, Power - Max: 77 W.
Weitere Produktangebote IRGS4045DPBF
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IRGS4045DPBF Produktcode: 73712 |
 Transistoren > Transistoren IGBT, Leistungsmodule |
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IRGS4045DPBF | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 12A 77000mW 3-Pin(2+Tab) D2PAK Tube |
Produkt ist nicht verfügbar |
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IRGS4045DPBF | Hersteller : Infineon Technologies |
Description: IGBT 600V 12A 77W D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 74 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 27ns/75ns Switching Energy: 56µJ (on), 122µJ (off) Test Condition: 400V, 6A, 47Ohm, 15V Gate Charge: 19.5 nC Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 18 A Power - Max: 77 W |
Produkt ist nicht verfügbar |