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TC357TA64F300SABKXUMA1 TC357TA64F300SABKXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 3.6M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IPD60R180CM8XTMA1 IPD60R180CM8XTMA1 Infineon Technologies Description: IPD60R180CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
Produkt ist nicht verfügbar
IPD60R180CM8XTMA1 IPD60R180CM8XTMA1 Infineon Technologies Description: IPD60R180CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
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10+ 2.69 EUR
100+ 1.84 EUR
500+ 1.48 EUR
1000+ 1.36 EUR
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PVN012PBF PVN012PBF Infineon Technologies pvn012.pdf?fileId=5546d462533600a401535683f185294d Description: SSR RELAY SPST-NO 2.5A 0-20V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2.5 A
Approval Agency: UL
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 100 mOhms
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10+ 31.25 EUR
25+ 29.69 EUR
50+ 28.13 EUR
100+ 26.56 EUR
250+ 24.22 EUR
500+ 22.66 EUR
PVN012APBF PVN012APBF Infineon Technologies pvn012apbf.pdf?fileId=5546d462533600a401535683f9ec2950 Description: SSR RELAY SPST-NO 4A 0-20V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 4 A
Approval Agency: UL
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 50 mOhms
Produkt ist nicht verfügbar
FF225R12MS4BOSA1 FF225R12MS4BOSA1 Infineon Technologies Infineon-FF225R12MS4-DS-v02_01-en_de.pdf?fileId=db3a304313b8b5a60113ba985a0e00b0 Description: IGBT MOD 1200V 275A 1450W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 15 nF @ 25 V
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CY8C4247LWA-M464 CY8C4247LWA-M464 Infineon Technologies Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 56-QFN-EP (8x8)
Grade: Automotive
Number of I/O: 46
Qualification: AEC-Q100
Produkt ist nicht verfügbar
CY8C4247LWA-M464T CY8C4247LWA-M464T Infineon Technologies Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 56-QFN-EP (8x8)
Grade: Automotive
Number of I/O: 46
Qualification: AEC-Q100
Produkt ist nicht verfügbar
AUIRFR4104TRL AUIRFR4104TRL Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Produkt ist nicht verfügbar
AUIRFR4104 AUIRFR4104 Infineon Technologies AUIRF%28R%2CU%294104.pdf Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Produkt ist nicht verfügbar
TLE4241SYSSHIELDTOBO1 Infineon Technologies Description: Eval
Packaging: Bulk
Function: Extension Board
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE4241GM
Platform: Arduino
Produkt ist nicht verfügbar
IRS2330DJTRPBF IRS2330DJTRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IRS2330DJTRPBF IRS2330DJTRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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IRS2330JTRPBF IRS2330JTRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IRS2330DSPBF IRS2330DSPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IRS2330DJPBF IRS2330DJPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IRS2330DSTRPBF IRS2330DSTRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IRS2330JPBF IRS2330JPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
FZ1500R33HL3B60BPSA1 Infineon Technologies Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Produkt ist nicht verfügbar
TLE9274QXV33XUMA1 Infineon Technologies Infineon-TLE9274QX%20V33-DataSheet-v01_50-EN.pdf?fileId=5546d4627762291e01776d6101847b85 Description: OPTIREG SYST BASIS CHIPS PG-VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Multiple
Mounting Type: Surface Mount
Number of Outputs: 4
Voltage - Input: 4.5V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Produkt ist nicht verfügbar
TD170N12KOFHPSA1 TD170N12KOFHPSA1 Infineon Technologies TT170N.pdf Description: SCR MODULE 1800V 350A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 223 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 350 A
Voltage - Off State: 1.8 kV
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TD170N12KOFHPSA1 TD170N12KOFHPSA1 Infineon Technologies TT170N.pdf Description: SCR MODULE 1800V 350A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 223 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 350 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
TC337DA32F200SAAKXUMA1 TC337DA32F200SAAKXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 2MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1.54K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
FD600R12KF4NOSA1 Infineon Technologies FD600R12KF4_v02_Jan98.pdf Description: IGBT MODULE 1200V 600A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 600A
NTC Thermistor: No
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3900 W
Current - Collector Cutoff (Max): 8 mA
Input Capacitance (Cies) @ Vce: 45 nF @ 25 V
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CY14V101QS-BK108XIT CY14V101QS-BK108XIT Infineon Technologies Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT SPI 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
SLF9620M51XHSA1 Infineon Technologies Description: IC SECURITY CHIP CARD CTLR SMD
Packaging: Tape & Reel (TR)
Interface: ISO/IEC 7816 Interface
Operating Temperature: -25°C ~ 70°C (TA)
Applications: Security
Core Processor: ARM® Cortex®-M4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
TLE4997A8XUMA1 TLE4997A8XUMA1 Infineon Technologies Infineon-TLE4997A8D_DS-DS-v01_00-EN.pdf?fileId=5546d4625b62cd8a015bc87f823f319f Description: SENSOR HALL EFFECT ANALOG TDSO-8
Packaging: Bulk
Features: Programmable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: 1.32kHz
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±50mT ~ ±200mT
Current - Output (Max): 1mA
Current - Supply (Max): 10mA
Grade: Automotive
Qualification: AEC-Q100
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FP35R12W2T4PB11BPSA1 FP35R12W2T4PB11BPSA1 Infineon Technologies Infineon-FP35R12W2T4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625bd71aa0015bfb8803656ea3 Description: IGBT MOD 1200V 70A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
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5+102.06 EUR
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TLE9893QKW62SXUMA1 Infineon Technologies Infineon-TLE988x_9x_DataSheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8823155701882e60aa3a4f50 Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Interface: CANbus, DMA, GPIO, SPI, SSC, UART/USART
RAM Size: 31K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE989x
Program Memory Type: EEPROM (8kB), FLASH (272kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-LQFP-64-28
Grade: Automotive
Number of I/O: 16
Qualification: AEC-Q100
Produkt ist nicht verfügbar
TLE98932QKW62SXUMA1 Infineon Technologies Infineon-TLE988x_9x_DataSheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8823155701882e60aa3a4f50 Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Interface: CANbus, DMA, GPIO, SPI, SSC, UART/USART
RAM Size: 31K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE989x
Program Memory Type: EEPROM (8kB), FLASH (272kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-LQFP-64-28
Grade: Automotive
Number of I/O: 16
Qualification: AEC-Q100
Produkt ist nicht verfügbar
SAF-XC878CM-13FFI 3V3 AC SAF-XC878CM-13FFI 3V3 AC Infineon Technologies Infineon-XC87X-DS-v01_05-en.pdf?fileId=db3a30432239cccd01231293d56908b1&ack=t Description: IC MCU 8BIT 52KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
T1081N65TOHXPSA1 T1081N65TOHXPSA1 Infineon Technologies Infineon-T1081N-DS-v08_00-en_de.pdf?fileId=db3a304412b407950112b43054725012 Description: SCR MODULE 7000V 2040A DO200AE
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 2040 A
Voltage - Off State: 7 kV
Produkt ist nicht verfügbar
TLE75242ESHDBTOBO1 Infineon Technologies Description: TLE75242-ESH DB CONTAINS THE DAU
Packaging: Bulk
Function: Expansion Board
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE75242
Produkt ist nicht verfügbar
DD600N18KHPSA2 DD600N18KHPSA2 Infineon Technologies Infineon-DD600N-DS-v03_02-EN.pdf?fileId=db3a304412b407950112b42fbcc44d54 Description: DIODE MODULE GP 1800V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
Produkt ist nicht verfügbar
PTFA092213ELV4R0XTMA1 Infineon Technologies PTFA092213EL_FL.pdf Description: RF MOSFET LDMOS
Packaging: Tape & Reel (TR)
Frequency: 920MHz ~ 960MHz
Configuration: N-Channel
Power - Output: 220W
Gain: 17.5dB
Technology: MOSFET (Metal Oxide)
Voltage - Rated: 30 V
Produkt ist nicht verfügbar
IRFH5250DTRPBF IRFH5250DTRPBF Infineon Technologies irfh5250dpbf.pdf?fileId=5546d462533600a40153561b25601eb6 Description: MOSFET N-CH 25V 40A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6115 pF @ 13 V
Produkt ist nicht verfügbar
AUIRL3705Z AUIRL3705Z Infineon Technologies auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546 Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Produkt ist nicht verfügbar
TC299TP128F300NBCKXUMA2 Infineon Technologies Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 8MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 768K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 263
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY8CTST110-00PVXI CY8CTST110-00PVXI Infineon Technologies CY8CTST110.pdf Description: IC TRUETOUCH CAPSENSE
Packaging: Bulk
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Controller Series: CY8CT
Program Memory Type: FLASH (8kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 56-SSOP
DigiKey Programmable: Not Verified
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PLF2800EV1.2 PLF2800EV1.2 Infineon Technologies Description: PLF2800 PURPLE L2+ ETHERNET SWIT
Packaging: Bulk
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IR4312MTRPBF IR4312MTRPBF Infineon Technologies ir4302.pdf?fileId=5546d462533600a4015355d602a9181d Description: IC AMP CLASS D STEREO 35W 44QFN
Packaging: Bulk
Features: Depop, Differential Inputs
Package / Case: 44-PowerVFQFN
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Supplier Device Package: 44-PQFN (7x7)
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CYT3BB8CEBR0AESGST CYT3BB8CEBR0AESGST Infineon Technologies Description: IC MCU 32BT 4.063MB FLSH 176QFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 148
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
FF7MR12W1M1HB17BPSA1 FF7MR12W1M1HB17BPSA1 Infineon Technologies Description: EASY STANDARD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 800V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 400nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.15V @ 56mA
Supplier Device Package: AG-EASY1B
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CY14B104NA-ZSP45XIT CY14B104NA-ZSP45XIT Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY14B104NA-ZSP25XIT CY14B104NA-ZSP25XIT Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY14B104NA-ZS45XIT CY14B104NA-ZS45XIT Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY14B104NA-BA45XIT CY14B104NA-BA45XIT Infineon Technologies download Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY14B104NA-BA20XIT CY14B104NA-BA20XIT Infineon Technologies download Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY14B104NA-ZS20XIT CY14B104NA-ZS20XIT Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY14B104NA-BA45XE CY14B104NA-BA45XE Infineon Technologies download Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY14B104NA-ZS45XET CY14B104NA-ZS45XET Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.63V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
FP75R12KT4B11BOSA1 FP75R12KT4B11BOSA1 Infineon Technologies Infineon-FP75R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a3043156fd57301161a6e62791e20 Description: IGBT MOD 1200V 75A 385W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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FZ1200R45HL3BPSA1 FZ1200R45HL3BPSA1 Infineon Technologies Infineon-FZ1200R45HL-DS-v03_01-en_de.pdf?fileId=db3a304345087709014516f875431b4b Description: IGBT MODULE 4500V 1200A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Power - Max: 15000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
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FF300R06KE3HOSA1 FF300R06KE3HOSA1 Infineon Technologies Infineon-FF300R06KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b434a40a60d8 Description: IGBT MOD 600V 400A 940W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Produkt ist nicht verfügbar
FZ30R07W1E3B31ABOMA1 FZ30R07W1E3B31ABOMA1 Infineon Technologies FZ30R07W1E3_B31A.pdf Description: IGBT MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Produkt ist nicht verfügbar
FS150R17N3E4B11BOSA1 FS150R17N3E4B11BOSA1 Infineon Technologies Infineon-FS150R17N3E4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043397219b6013976618c5b5247 Description: IGBT MOD 1700V 150A 835W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 835 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
Produkt ist nicht verfügbar
DF1000R17IE4DB2BOSA1 DF1000R17IE4DB2BOSA1 Infineon Technologies Infineon-DF1000R17IE4D_B2-DS-v02_01-en_de.pdf?fileId=db3a30432ddff8bd012e00b755cb4606 Description: IGBT MODULE 1700V 6250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
Produkt ist nicht verfügbar
BAT2402ELSE6327XTSA1 BAT2402ELSE6327XTSA1 Infineon Technologies INFN-S-A0009651208-1.pdf?t.download=true&u=5oefqw Description: BAT24 - RF MIXER AND DETECTOR SC
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Vr, F: 0.2pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-3
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
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FS3L40R07W2H5FB70BPSA1 FS3L40R07W2H5FB70BPSA1 Infineon Technologies Description: EASY STANDARD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 20A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 18 µA
Input Capacitance (Cies) @ Vce: 1940 pF @ 25 V
Produkt ist nicht verfügbar
TLE4295GV33HTSA1 TLE4295GV33HTSA1 Infineon Technologies Infineon-TLE4295-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8575241f74 Description: IC REG LINEAR 3.3V 30MA SCT595-5
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Power Fail
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
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TC357TA64F300SABKXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
TC357TA64F300SABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 3.6M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IPD60R180CM8XTMA1
IPD60R180CM8XTMA1
Hersteller: Infineon Technologies
Description: IPD60R180CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
Produkt ist nicht verfügbar
IPD60R180CM8XTMA1
IPD60R180CM8XTMA1
Hersteller: Infineon Technologies
Description: IPD60R180CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
auf Bestellung 2150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.17 EUR
10+ 2.69 EUR
100+ 1.84 EUR
500+ 1.48 EUR
1000+ 1.36 EUR
Mindestbestellmenge: 5
PVN012PBF pvn012.pdf?fileId=5546d462533600a401535683f185294d
PVN012PBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 2.5A 0-20V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2.5 A
Approval Agency: UL
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 100 mOhms
auf Bestellung 1838 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+35.15 EUR
10+ 31.25 EUR
25+ 29.69 EUR
50+ 28.13 EUR
100+ 26.56 EUR
250+ 24.22 EUR
500+ 22.66 EUR
PVN012APBF pvn012apbf.pdf?fileId=5546d462533600a401535683f9ec2950
PVN012APBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 4A 0-20V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 4 A
Approval Agency: UL
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 50 mOhms
Produkt ist nicht verfügbar
FF225R12MS4BOSA1 Infineon-FF225R12MS4-DS-v02_01-en_de.pdf?fileId=db3a304313b8b5a60113ba985a0e00b0
FF225R12MS4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 275A 1450W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 15 nF @ 25 V
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+307.12 EUR
Mindestbestellmenge: 2
CY8C4247LWA-M464
CY8C4247LWA-M464
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 56-QFN-EP (8x8)
Grade: Automotive
Number of I/O: 46
Qualification: AEC-Q100
Produkt ist nicht verfügbar
CY8C4247LWA-M464T
CY8C4247LWA-M464T
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 56-QFN-EP (8x8)
Grade: Automotive
Number of I/O: 46
Qualification: AEC-Q100
Produkt ist nicht verfügbar
AUIRFR4104TRL fundamentals-of-power-semiconductors
AUIRFR4104TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Produkt ist nicht verfügbar
AUIRFR4104 AUIRF%28R%2CU%294104.pdf
AUIRFR4104
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Produkt ist nicht verfügbar
TLE4241SYSSHIELDTOBO1
Hersteller: Infineon Technologies
Description: Eval
Packaging: Bulk
Function: Extension Board
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE4241GM
Platform: Arduino
Produkt ist nicht verfügbar
IRS2330DJTRPBF fundamentals-of-power-semiconductors
IRS2330DJTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IRS2330DJTRPBF fundamentals-of-power-semiconductors
IRS2330DJTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.3 EUR
10+ 6.57 EUR
Mindestbestellmenge: 3
IRS2330JTRPBF fundamentals-of-power-semiconductors
IRS2330JTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IRS2330DSPBF fundamentals-of-power-semiconductors
IRS2330DSPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IRS2330DJPBF fundamentals-of-power-semiconductors
IRS2330DJPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IRS2330DSTRPBF fundamentals-of-power-semiconductors
IRS2330DSTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IRS2330JPBF fundamentals-of-power-semiconductors
IRS2330JPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
FZ1500R33HL3B60BPSA1
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Produkt ist nicht verfügbar
TLE9274QXV33XUMA1 Infineon-TLE9274QX%20V33-DataSheet-v01_50-EN.pdf?fileId=5546d4627762291e01776d6101847b85
Hersteller: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS PG-VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Multiple
Mounting Type: Surface Mount
Number of Outputs: 4
Voltage - Input: 4.5V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Produkt ist nicht verfügbar
TD170N12KOFHPSA1 TT170N.pdf
TD170N12KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 350A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 223 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 350 A
Voltage - Off State: 1.8 kV
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+194.26 EUR
Mindestbestellmenge: 3
TD170N12KOFHPSA1 TT170N.pdf
TD170N12KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 350A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 223 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 350 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
TC337DA32F200SAAKXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
TC337DA32F200SAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1.54K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
FD600R12KF4NOSA1 FD600R12KF4_v02_Jan98.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 600A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 600A
NTC Thermistor: No
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3900 W
Current - Collector Cutoff (Max): 8 mA
Input Capacitance (Cies) @ Vce: 45 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+1238.6 EUR
CY14V101QS-BK108XIT Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14V101QS-BK108XIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
SLF9620M51XHSA1
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR SMD
Packaging: Tape & Reel (TR)
Interface: ISO/IEC 7816 Interface
Operating Temperature: -25°C ~ 70°C (TA)
Applications: Security
Core Processor: ARM® Cortex®-M4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
TLE4997A8XUMA1 Infineon-TLE4997A8D_DS-DS-v01_00-EN.pdf?fileId=5546d4625b62cd8a015bc87f823f319f
TLE4997A8XUMA1
Hersteller: Infineon Technologies
Description: SENSOR HALL EFFECT ANALOG TDSO-8
Packaging: Bulk
Features: Programmable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: 1.32kHz
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±50mT ~ ±200mT
Current - Output (Max): 1mA
Current - Supply (Max): 10mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 473 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
132+3.69 EUR
Mindestbestellmenge: 132
FP35R12W2T4PB11BPSA1 Infineon-FP35R12W2T4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625bd71aa0015bfb8803656ea3
FP35R12W2T4PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 70A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+102.06 EUR
Mindestbestellmenge: 5
TLE9893QKW62SXUMA1 Infineon-TLE988x_9x_DataSheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8823155701882e60aa3a4f50
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Interface: CANbus, DMA, GPIO, SPI, SSC, UART/USART
RAM Size: 31K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE989x
Program Memory Type: EEPROM (8kB), FLASH (272kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-LQFP-64-28
Grade: Automotive
Number of I/O: 16
Qualification: AEC-Q100
Produkt ist nicht verfügbar
TLE98932QKW62SXUMA1 Infineon-TLE988x_9x_DataSheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8823155701882e60aa3a4f50
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Interface: CANbus, DMA, GPIO, SPI, SSC, UART/USART
RAM Size: 31K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE989x
Program Memory Type: EEPROM (8kB), FLASH (272kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-LQFP-64-28
Grade: Automotive
Number of I/O: 16
Qualification: AEC-Q100
Produkt ist nicht verfügbar
SAF-XC878CM-13FFI 3V3 AC Infineon-XC87X-DS-v01_05-en.pdf?fileId=db3a30432239cccd01231293d56908b1&ack=t
SAF-XC878CM-13FFI 3V3 AC
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 52KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
T1081N65TOHXPSA1 Infineon-T1081N-DS-v08_00-en_de.pdf?fileId=db3a304412b407950112b43054725012
T1081N65TOHXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 7000V 2040A DO200AE
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 2040 A
Voltage - Off State: 7 kV
Produkt ist nicht verfügbar
TLE75242ESHDBTOBO1
Hersteller: Infineon Technologies
Description: TLE75242-ESH DB CONTAINS THE DAU
Packaging: Bulk
Function: Expansion Board
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE75242
Produkt ist nicht verfügbar
DD600N18KHPSA2 Infineon-DD600N-DS-v03_02-EN.pdf?fileId=db3a304412b407950112b42fbcc44d54
DD600N18KHPSA2
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1800V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
Produkt ist nicht verfügbar
PTFA092213ELV4R0XTMA1 PTFA092213EL_FL.pdf
Hersteller: Infineon Technologies
Description: RF MOSFET LDMOS
Packaging: Tape & Reel (TR)
Frequency: 920MHz ~ 960MHz
Configuration: N-Channel
Power - Output: 220W
Gain: 17.5dB
Technology: MOSFET (Metal Oxide)
Voltage - Rated: 30 V
Produkt ist nicht verfügbar
IRFH5250DTRPBF irfh5250dpbf.pdf?fileId=5546d462533600a40153561b25601eb6
IRFH5250DTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 40A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6115 pF @ 13 V
Produkt ist nicht verfügbar
AUIRL3705Z auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546
AUIRL3705Z
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Produkt ist nicht verfügbar
TC299TP128F300NBCKXUMA2 Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 768K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 263
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY8CTST110-00PVXI CY8CTST110.pdf
CY8CTST110-00PVXI
Hersteller: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE
Packaging: Bulk
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Controller Series: CY8CT
Program Memory Type: FLASH (8kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 56-SSOP
DigiKey Programmable: Not Verified
auf Bestellung 3278 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+70.42 EUR
Mindestbestellmenge: 7
PLF2800EV1.2
PLF2800EV1.2
Hersteller: Infineon Technologies
Description: PLF2800 PURPLE L2+ ETHERNET SWIT
Packaging: Bulk
auf Bestellung 2208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+201.15 EUR
Mindestbestellmenge: 3
IR4312MTRPBF ir4302.pdf?fileId=5546d462533600a4015355d602a9181d
IR4312MTRPBF
Hersteller: Infineon Technologies
Description: IC AMP CLASS D STEREO 35W 44QFN
Packaging: Bulk
Features: Depop, Differential Inputs
Package / Case: 44-PowerVFQFN
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Supplier Device Package: 44-PQFN (7x7)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+7.75 EUR
Mindestbestellmenge: 63
CYT3BB8CEBR0AESGST
CYT3BB8CEBR0AESGST
Hersteller: Infineon Technologies
Description: IC MCU 32BT 4.063MB FLSH 176QFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 148
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
FF7MR12W1M1HB17BPSA1
FF7MR12W1M1HB17BPSA1
Hersteller: Infineon Technologies
Description: EASY STANDARD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 800V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 400nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.15V @ 56mA
Supplier Device Package: AG-EASY1B
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+266.27 EUR
24+ 249.39 EUR
CY14B104NA-ZSP45XIT download
CY14B104NA-ZSP45XIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY14B104NA-ZSP25XIT download
CY14B104NA-ZSP25XIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY14B104NA-ZS45XIT download
CY14B104NA-ZS45XIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY14B104NA-BA45XIT download
CY14B104NA-BA45XIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY14B104NA-BA20XIT download
CY14B104NA-BA20XIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY14B104NA-ZS20XIT download
CY14B104NA-ZS20XIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY14B104NA-BA45XE download
CY14B104NA-BA45XE
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY14B104NA-ZS45XET download
CY14B104NA-ZS45XET
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.63V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
FP75R12KT4B11BOSA1 Infineon-FP75R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a3043156fd57301161a6e62791e20
FP75R12KT4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 75A 385W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
auf Bestellung 11 Stücke:
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Anzahl Preis ohne MwSt
2+281.32 EUR
Mindestbestellmenge: 2
FZ1200R45HL3BPSA1 Infineon-FZ1200R45HL-DS-v03_01-en_de.pdf?fileId=db3a304345087709014516f875431b4b
FZ1200R45HL3BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 4500V 1200A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Power - Max: 15000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
auf Bestellung 22 Stücke:
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Anzahl Preis ohne MwSt
1+8114.08 EUR
FF300R06KE3HOSA1 Infineon-FF300R06KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b434a40a60d8
FF300R06KE3HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 600V 400A 940W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Produkt ist nicht verfügbar
FZ30R07W1E3B31ABOMA1 FZ30R07W1E3_B31A.pdf
FZ30R07W1E3B31ABOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Produkt ist nicht verfügbar
FS150R17N3E4B11BOSA1 Infineon-FS150R17N3E4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043397219b6013976618c5b5247
FS150R17N3E4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 150A 835W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 835 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
Produkt ist nicht verfügbar
DF1000R17IE4DB2BOSA1 Infineon-DF1000R17IE4D_B2-DS-v02_01-en_de.pdf?fileId=db3a30432ddff8bd012e00b755cb4606
DF1000R17IE4DB2BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 6250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
Produkt ist nicht verfügbar
BAT2402ELSE6327XTSA1 INFN-S-A0009651208-1.pdf?t.download=true&u=5oefqw
BAT2402ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: BAT24 - RF MIXER AND DETECTOR SC
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Vr, F: 0.2pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-3
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 30593 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
559+0.87 EUR
Mindestbestellmenge: 559
FS3L40R07W2H5FB70BPSA1
FS3L40R07W2H5FB70BPSA1
Hersteller: Infineon Technologies
Description: EASY STANDARD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 20A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 18 µA
Input Capacitance (Cies) @ Vce: 1940 pF @ 25 V
Produkt ist nicht verfügbar
TLE4295GV33HTSA1 Infineon-TLE4295-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8575241f74
TLE4295GV33HTSA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 30MA SCT595-5
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Power Fail
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
auf Bestellung 3757 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
537+0.91 EUR
Mindestbestellmenge: 537
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