Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (137774) > Seite 730 nach 2297
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IPQC60T017S7AXTMA1 | Infineon Technologies |
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IPQC60T017S7AXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) |
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IRGP4062-EPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A Supplier Device Package: TO-247AD IGBT Type: Trench Td (on/off) @ 25°C: 41ns/104ns Switching Energy: 115µJ (on), 600µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 75 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 72 A Power - Max: 250 W |
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BGS312MC27-2IE6433XUSA1 | Infineon Technologies |
Description: BGS312MC27 - LIMITED DATA AVAILA Packaging: Bulk DigiKey Programmable: Not Verified |
auf Bestellung 648000 Stücke: Lieferzeit 10-14 Tag (e) |
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S29GL064N90BFI030 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-FBGA (8.15x6.15) Write Cycle Time - Word, Page: 90ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified |
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S29GL064N90FAI010 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Grade: Automotive Write Cycle Time - Word, Page: 90ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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S29GL064N90TFI043 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-TSOP Write Cycle Time - Word, Page: 90ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified |
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CY91F522KWBPMC-GSE2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 320KB (320K x 8) RAM Size: 56K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: FR81S Data Converters: A/D 48x12b SAR; D/A 2x8b R2R Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Number of I/O: 120 DigiKey Programmable: Not Verified |
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CYW20829B0P4TAI100XUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 41-SMD Module Sensitivity: -106dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 1MB Flash, 256kB SRAM Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.75V ~ 3.6V Power - Output: 10dBm Data Rate: 2Mbps Protocol: Bluetooth v5.4 Current - Receiving: 5.6mA Current - Transmitting: 5.2mA ~ 17.2mA Antenna Type: PCB Trace Utilized IC / Part: CYW20829 Modulation: GFSK RF Family/Standard: Bluetooth Serial Interfaces: GPIO, I2C, I2S, IrDA, JTAG, PCM, PWM, SPI, UART |
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CYW20829B0P4TAI100XUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 41-SMD Module Sensitivity: -106dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 1MB Flash, 256kB SRAM Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.75V ~ 3.6V Power - Output: 10dBm Data Rate: 2Mbps Protocol: Bluetooth v5.4 Current - Receiving: 5.6mA Current - Transmitting: 5.2mA ~ 17.2mA Antenna Type: PCB Trace Utilized IC / Part: CYW20829 Modulation: GFSK RF Family/Standard: Bluetooth Serial Interfaces: GPIO, I2C, I2S, IrDA, JTAG, PCM, PWM, SPI, UART |
auf Bestellung 230 Stücke: Lieferzeit 10-14 Tag (e) |
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CYW20721B2KUMLG | Infineon Technologies |
![]() Packaging: Tray Package / Case: 40-UFQFN Exposed Pad Sensitivity: -95.5dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 1MB Flash, 512kB RAM, 2MB ROM Type: TxRx + MCU Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.76V ~ 3.63V Power - Output: 5dBm Protocol: Bluetooth v5.1 + EDR Current - Receiving: 5.9mA Data Rate (Max): 3Mbps Current - Transmitting: 5.6mA Supplier Device Package: 40-QFN (5x5) GPIO: 16 Modulation: 8DPSK, 8PSK, DQPSK, GFSK, QPSK RF Family/Standard: Bluetooth Serial Interfaces: I2C, I2S, PCM, PDM, SPI, UART DigiKey Programmable: Not Verified |
auf Bestellung 425 Stücke: Lieferzeit 10-14 Tag (e) |
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CYW20730A2KML2G | Infineon Technologies |
![]() Packaging: Tray Package / Case: 32-VFQFN Exposed Pad Sensitivity: -88dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 60kB RAM Type: TxRx Only Operating Temperature: 0°C ~ 70°C Voltage - Supply: 1.14V ~ 1.26V Power - Output: 4dBm Protocol: Bluetooth v5.1 Current - Receiving: 26.6mA Data Rate (Max): 1.5Mbps Current - Transmitting: 24mA Supplier Device Package: 32-QFN (5x5) GPIO: 14 Modulation: GFSK RF Family/Standard: Bluetooth Serial Interfaces: I2C, SPI, UART |
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CYW20730A1KFBG | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-VFBGA Sensitivity: -88dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 60kB RAM Type: TxRx Only Operating Temperature: 0°C ~ 70°C Voltage - Supply: 1.14V ~ 1.26V Power - Output: 4dBm Protocol: Bluetooth v5.1 Current - Receiving: 26.6mA Data Rate (Max): 1.5Mbps Current - Transmitting: 24mA Supplier Device Package: 64-FBGA (7x7) GPIO: 39 Modulation: GFSK RF Family/Standard: Bluetooth Serial Interfaces: I2C, SPI, UART |
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CYW20734UA2KFFB3G | Infineon Technologies |
Description: BLUE TOOTH DUAL MODE Packaging: Tray Package / Case: 90-TFBGA Sensitivity: -96.5dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 352kB RAM, 848kB ROM Type: TxRx + MCU Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.62V ~ 3.6V Protocol: Bluetooth v4.1 Data Rate (Max): 6Mbps Supplier Device Package: 90-FBGA (8.5x8.5) GPIO: 39 Modulation: 4-DQPSK, 8-DPSK RF Family/Standard: Bluetooth Serial Interfaces: I2C, SPI, UART |
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XC2764X40F80LRABKXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 320KB (320K x 8) RAM Size: 34K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-100-8 Number of I/O: 76 DigiKey Programmable: Not Verified |
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6EDM2003L06F06X1SA1 | Infineon Technologies |
Description: IC GATE DRVR BARE DIE Packaging: Bulk DigiKey Programmable: Not Verified |
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BTS52001EJAXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 200mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-8-43-EP Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage |
Produkt ist nicht verfügbar |
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BTS52001EJAXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 200mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-8-43-EP Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage |
Produkt ist nicht verfügbar |
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AUIRFZ44NSTRL | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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CY9AF155MAPMC-G-JNE2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 416KB (416K x 8) RAM Size: 48K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 17x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 80-LQFP (12x12) Number of I/O: 66 DigiKey Programmable: Not Verified |
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AUIRFP2907 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 125A, 10V Power Dissipation (Max): 470W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V |
Produkt ist nicht verfügbar |
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BSB014N04LX3GXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 20 V |
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BSB014N04LX3GXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 20 V |
Produkt ist nicht verfügbar |
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FP10R12W1T4PBPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 600 pF @ 25 V |
auf Bestellung 415 Stücke: Lieferzeit 10-14 Tag (e) |
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FP10R12W1T4BOMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 105 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 600 pF @ 25 V |
auf Bestellung 51 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF200B211XKMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 7.2A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 50µA Supplier Device Package: PG-TO220-3-904 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V |
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IRF200S234 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 16.9mOhm @ 51A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6484 pF @ 50 V |
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IRF200S234 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 16.9mOhm @ 51A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6484 pF @ 50 V |
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TLE7273G V50 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 180mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 35 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: P-DSO-14-8 Voltage - Output (Min/Fixed): 5V Control Features: Inhibit, Reset, Watchdog PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.5V @ 180mA Protection Features: Over Current, Over Temperature, Short Circuit |
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BUZ73A | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V |
Produkt ist nicht verfügbar |
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FF300R17ME4PB11BPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 20 mW Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V |
auf Bestellung 381 Stücke: Lieferzeit 10-14 Tag (e) |
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FF450R12ME4EB11BPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A NTC Thermistor: Yes Supplier Device Package: AG-ECONOD-6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 28 nF @ 25 V |
auf Bestellung 650 Stücke: Lieferzeit 10-14 Tag (e) |
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IMW65R050M2HXKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V Power Dissipation (Max): 153W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 3.7mA Supplier Device Package: PG-TO247-3-40 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V |
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IMZA65R050M2HXKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V Power Dissipation (Max): 153W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 3.7mA Supplier Device Package: PG-TO247-4-8 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V |
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CYBLE-224110-PROG | Infineon Technologies |
Description: MODULE KIT Packaging: Bulk For Use With/Related Products: CYBLE-224110-00, CYBLE-224116-01 Type: Programmer Contents: Board(s) |
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CYBLE-224110-00 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: Module Sensitivity: -95dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 256kB Flash, 32kB SRAM Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.8V ~ 5.5V Power - Output: 9.5dBm Data Rate: 1Mbps Protocol: Bluetooth v4.1 Current - Receiving: 21.5mA Current - Transmitting: 20mA Antenna Type: Integrated, Chip RF Family/Standard: Bluetooth Serial Interfaces: I2C, SPI, UART DigiKey Programmable: Not Verified |
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ISZ0901NLSATMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 20A, 10V Power Dissipation (Max): 26W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-25 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V |
auf Bestellung 3565 Stücke: Lieferzeit 10-14 Tag (e) |
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S79FL512SDSMFVG01 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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AUIRFP1405 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 95A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRFP1405 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 95A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V |
Produkt ist nicht verfügbar |
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AUIRFZ34N | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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S99-50567 | Infineon Technologies |
Description: INFINEON Packaging: Bulk |
Produkt ist nicht verfügbar |
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CY7C1370KVE33-167AXM | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: -55°C ~ 125°C (TC) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C1460KVE33-167BZC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 1M x 36 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C1440KV33-167AXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 1M x 36 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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AUIRF4905L | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-262 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
auf Bestellung 1077 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF4905L | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-262 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
Produkt ist nicht verfügbar |
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IPP65R150CFDXKSA2 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V Power Dissipation (Max): 195.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 900µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPP65R310CFDXKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V Power Dissipation (Max): 104.2W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 440µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPP65R150CFDXKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V Power Dissipation (Max): 195.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 900µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V |
Produkt ist nicht verfügbar |
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S99-50542 | Infineon Technologies |
Description: INFINEON Packaging: Bulk |
Produkt ist nicht verfügbar |
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EVALTDA388121VOUTTOBO1 | Infineon Technologies |
Description: EVALTDA388121VOUTTO Packaging: Box Voltage - Output: 1V Voltage - Input: 4V ~ 16V Current - Output: 12A Frequency - Switching: 800kHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: TDA38812 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated |
Produkt ist nicht verfügbar |
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EVALTDA3881233VOUTTOBO1 | Infineon Technologies |
Description: EVALTDA3881233VOUTTO Packaging: Box Voltage - Output: 3.3V Voltage - Input: 4V ~ 16V Current - Output: 12A Frequency - Switching: 800kHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: TDA38812 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated |
Produkt ist nicht verfügbar |
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EVALTDA388131VOUTTOBO1 | Infineon Technologies |
Description: EVALTDA388131VOUTTOB Packaging: Box Voltage - Output: 1V Voltage - Input: 4V ~ 16V Current - Output: 12A Frequency - Switching: 800kHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: TDA38813 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated |
Produkt ist nicht verfügbar |
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EVALTDA388255VOUTTOBO1 | Infineon Technologies |
Description: EVALTDA388255VOUTTOBO Packaging: Box Voltage - Output: 5V Voltage - Input: 4V ~ 16V Current - Output: 20A Frequency - Switching: 800kHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: TDA38825 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated |
Produkt ist nicht verfügbar |
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EVALTDA388251VOUTTOBO1 | Infineon Technologies |
Description: EVALTDA388251VOUTTOB Packaging: Box Voltage - Output: 1V Voltage - Input: 4V ~ 16V Current - Output: 20A Frequency - Switching: 800kHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: TDA38825 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated |
Produkt ist nicht verfügbar |
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EVALTDA3882533VOUTTOBO1 | Infineon Technologies |
Description: EVALTDA3882533VOUTTOB Packaging: Box Voltage - Output: 3.3V Voltage - Input: 4V ~ 16V Current - Output: 20A Frequency - Switching: 800kHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: TDA38825 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated |
Produkt ist nicht verfügbar |
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EVALTDA388261VOUTTOBO1 | Infineon Technologies |
Description: EVALTDA388261VOUTTOB Packaging: Box Voltage - Output: 1V Voltage - Input: 4V ~ 16V Current - Output: 20A Frequency - Switching: 800kHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: TDA38826 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated |
Produkt ist nicht verfügbar |
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IPB70N04S406ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 70A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4V @ 26µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB70N04S406ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 70A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4V @ 26µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V |
auf Bestellung 1919 Stücke: Lieferzeit 10-14 Tag (e) |
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IPQC60T017S7AXTMA1 |
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Produkt ist nicht verfügbar
IPQC60T017S7AXTMA1 |
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Produkt ist nicht verfügbar
IRGP4062-EPBF |
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Hersteller: Infineon Technologies
Description: IGBT 600V 48A 250W TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
Description: IGBT 600V 48A 250W TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
Produkt ist nicht verfügbar
BGS312MC27-2IE6433XUSA1 |
Hersteller: Infineon Technologies
Description: BGS312MC27 - LIMITED DATA AVAILA
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: BGS312MC27 - LIMITED DATA AVAILA
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 648000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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701+ | 0.7 EUR |
S29GL064N90BFI030 |
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Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
S29GL064N90FAI010 |
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Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
S29GL064N90TFI043 |
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Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY91F522KWBPMC-GSE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 320KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 320KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CYW20829B0P4TAI100XUMA1 |
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Hersteller: Infineon Technologies
Description: CYW20829B0P4TAI100XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 41-SMD Module
Sensitivity: -106dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB SRAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.75V ~ 3.6V
Power - Output: 10dBm
Data Rate: 2Mbps
Protocol: Bluetooth v5.4
Current - Receiving: 5.6mA
Current - Transmitting: 5.2mA ~ 17.2mA
Antenna Type: PCB Trace
Utilized IC / Part: CYW20829
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, I2C, I2S, IrDA, JTAG, PCM, PWM, SPI, UART
Description: CYW20829B0P4TAI100XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 41-SMD Module
Sensitivity: -106dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB SRAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.75V ~ 3.6V
Power - Output: 10dBm
Data Rate: 2Mbps
Protocol: Bluetooth v5.4
Current - Receiving: 5.6mA
Current - Transmitting: 5.2mA ~ 17.2mA
Antenna Type: PCB Trace
Utilized IC / Part: CYW20829
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, I2C, I2S, IrDA, JTAG, PCM, PWM, SPI, UART
Produkt ist nicht verfügbar
CYW20829B0P4TAI100XUMA1 |
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Hersteller: Infineon Technologies
Description: CYW20829B0P4TAI100XUMA1
Packaging: Cut Tape (CT)
Package / Case: 41-SMD Module
Sensitivity: -106dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB SRAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.75V ~ 3.6V
Power - Output: 10dBm
Data Rate: 2Mbps
Protocol: Bluetooth v5.4
Current - Receiving: 5.6mA
Current - Transmitting: 5.2mA ~ 17.2mA
Antenna Type: PCB Trace
Utilized IC / Part: CYW20829
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, I2C, I2S, IrDA, JTAG, PCM, PWM, SPI, UART
Description: CYW20829B0P4TAI100XUMA1
Packaging: Cut Tape (CT)
Package / Case: 41-SMD Module
Sensitivity: -106dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB SRAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.75V ~ 3.6V
Power - Output: 10dBm
Data Rate: 2Mbps
Protocol: Bluetooth v5.4
Current - Receiving: 5.6mA
Current - Transmitting: 5.2mA ~ 17.2mA
Antenna Type: PCB Trace
Utilized IC / Part: CYW20829
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, I2C, I2S, IrDA, JTAG, PCM, PWM, SPI, UART
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 11.26 EUR |
10+ | 10.33 EUR |
25+ | 9.39 EUR |
100+ | 8.45 EUR |
CYW20721B2KUMLG |
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Hersteller: Infineon Technologies
Description: Bluetooth, BLE and IEEE 802.15.4
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 512kB RAM, 2MB ROM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 8DPSK, 8PSK, DQPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, PCM, PDM, SPI, UART
DigiKey Programmable: Not Verified
Description: Bluetooth, BLE and IEEE 802.15.4
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 512kB RAM, 2MB ROM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 8DPSK, 8PSK, DQPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, PCM, PDM, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 425 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 15.98 EUR |
10+ | 14.65 EUR |
25+ | 13.31 EUR |
80+ | 11.98 EUR |
230+ | 10.98 EUR |
CYW20730A2KML2G |
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Hersteller: Infineon Technologies
Description: BLUE TOOTH DUAL MODE
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 60kB RAM
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V
Power - Output: 4dBm
Protocol: Bluetooth v5.1
Current - Receiving: 26.6mA
Data Rate (Max): 1.5Mbps
Current - Transmitting: 24mA
Supplier Device Package: 32-QFN (5x5)
GPIO: 14
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Description: BLUE TOOTH DUAL MODE
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 60kB RAM
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V
Power - Output: 4dBm
Protocol: Bluetooth v5.1
Current - Receiving: 26.6mA
Data Rate (Max): 1.5Mbps
Current - Transmitting: 24mA
Supplier Device Package: 32-QFN (5x5)
GPIO: 14
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Produkt ist nicht verfügbar
CYW20730A1KFBG |
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Hersteller: Infineon Technologies
Description: BLUE TOOTH DUAL MODE
Packaging: Tray
Package / Case: 64-VFBGA
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 60kB RAM
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V
Power - Output: 4dBm
Protocol: Bluetooth v5.1
Current - Receiving: 26.6mA
Data Rate (Max): 1.5Mbps
Current - Transmitting: 24mA
Supplier Device Package: 64-FBGA (7x7)
GPIO: 39
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Description: BLUE TOOTH DUAL MODE
Packaging: Tray
Package / Case: 64-VFBGA
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 60kB RAM
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V
Power - Output: 4dBm
Protocol: Bluetooth v5.1
Current - Receiving: 26.6mA
Data Rate (Max): 1.5Mbps
Current - Transmitting: 24mA
Supplier Device Package: 64-FBGA (7x7)
GPIO: 39
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Produkt ist nicht verfügbar
CYW20734UA2KFFB3G |
Hersteller: Infineon Technologies
Description: BLUE TOOTH DUAL MODE
Packaging: Tray
Package / Case: 90-TFBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 352kB RAM, 848kB ROM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.62V ~ 3.6V
Protocol: Bluetooth v4.1
Data Rate (Max): 6Mbps
Supplier Device Package: 90-FBGA (8.5x8.5)
GPIO: 39
Modulation: 4-DQPSK, 8-DPSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Description: BLUE TOOTH DUAL MODE
Packaging: Tray
Package / Case: 90-TFBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 352kB RAM, 848kB ROM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.62V ~ 3.6V
Protocol: Bluetooth v4.1
Data Rate (Max): 6Mbps
Supplier Device Package: 90-FBGA (8.5x8.5)
GPIO: 39
Modulation: 4-DQPSK, 8-DPSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Produkt ist nicht verfügbar
XC2764X40F80LRABKXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
6EDM2003L06F06X1SA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR BARE DIE
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: IC GATE DRVR BARE DIE
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
BTS52001EJAXUMA1 |
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Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-43-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-43-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Produkt ist nicht verfügbar
BTS52001EJAXUMA1 |
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Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-43-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-43-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Produkt ist nicht verfügbar
AUIRFZ44NSTRL |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
258+ | 1.88 EUR |
CY9AF155MAPMC-G-JNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 416KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 416KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
AUIRFP2907 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 90A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 125A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Description: MOSFET N-CH 75V 90A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 125A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Produkt ist nicht verfügbar
BSB014N04LX3GXUMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 36A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 20 V
Description: MOSFET N-CH 40V 36A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 20 V
Produkt ist nicht verfügbar
BSB014N04LX3GXUMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 36A/180A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 20 V
Description: MOSFET N-CH 40V 36A/180A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 20 V
Produkt ist nicht verfügbar
FP10R12W1T4PBPSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 20A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
Description: IGBT MOD 1200V 20A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
auf Bestellung 415 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 66.86 EUR |
FP10R12W1T4BOMA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 20A 105W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
Description: IGBT MOD 1200V 20A 105W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 56.87 EUR |
IRF200B211XKMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 7.2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 7.2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Produkt ist nicht verfügbar
IRF200S234 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 90A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 51A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6484 pF @ 50 V
Description: MOSFET N-CH 200V 90A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 51A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6484 pF @ 50 V
Produkt ist nicht verfügbar
IRF200S234 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 51A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6484 pF @ 50 V
Description: MOSFET N-CH 200V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 51A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6484 pF @ 50 V
Produkt ist nicht verfügbar
TLE7273G V50 |
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Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 180MA DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: P-DSO-14-8
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset, Watchdog
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 180mA
Protection Features: Over Current, Over Temperature, Short Circuit
Description: IC REG LINEAR 5V 180MA DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: P-DSO-14-8
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset, Watchdog
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 180mA
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
BUZ73A |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Description: MOSFET N-CH 200V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Produkt ist nicht verfügbar
FF300R17ME4PB11BPSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 600A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V
Description: IGBT MOD 1700V 600A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V
auf Bestellung 381 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 321.23 EUR |
FF450R12ME4EB11BPSA1 |
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Hersteller: Infineon Technologies
Description: MOD IGBT MED PWR ECONOD-4
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Description: MOD IGBT MED PWR ECONOD-4
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
auf Bestellung 650 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 344.87 EUR |
IMW65R050M2HXKSA1 |
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Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
Produkt ist nicht verfügbar
IMZA65R050M2HXKSA1 |
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Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
Produkt ist nicht verfügbar
CYBLE-224110-PROG |
Hersteller: Infineon Technologies
Description: MODULE KIT
Packaging: Bulk
For Use With/Related Products: CYBLE-224110-00, CYBLE-224116-01
Type: Programmer
Contents: Board(s)
Description: MODULE KIT
Packaging: Bulk
For Use With/Related Products: CYBLE-224110-00, CYBLE-224116-01
Type: Programmer
Contents: Board(s)
Produkt ist nicht verfügbar
CYBLE-224110-00 |
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Hersteller: Infineon Technologies
Description: RF TXRX MODULE BT CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 9.5dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.1
Current - Receiving: 21.5mA
Current - Transmitting: 20mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
Description: RF TXRX MODULE BT CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 9.5dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.1
Current - Receiving: 21.5mA
Current - Transmitting: 20mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
ISZ0901NLSATMA1 |
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Hersteller: Infineon Technologies
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 20A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-25
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 20A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-25
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V
auf Bestellung 3565 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1113+ | 0.44 EUR |
S79FL512SDSMFVG01 |
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Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
AUIRFP1405 |
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Hersteller: Infineon Technologies
Description: AUIRFP1405 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 95A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Description: AUIRFP1405 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 95A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
117+ | 4.18 EUR |
AUIRFP1405 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 95A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 95A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Description: MOSFET N-CH 55V 95A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 95A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Produkt ist nicht verfügbar
AUIRFZ34N |
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Hersteller: Infineon Technologies
Description: AUIRFZ34 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: AUIRFZ34 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
402+ | 1.21 EUR |
S99-50567 |
Produkt ist nicht verfügbar
CY7C1370KVE33-167AXM |
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Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY7C1460KVE33-167BZC |
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Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY7C1440KV33-167AXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
AUIRF4905L |
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Hersteller: Infineon Technologies
Description: AUIRF4905 - 20V-150V P-CHANNEL A
Packaging: Bulk
Package / Case: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Description: AUIRF4905 - 20V-150V P-CHANNEL A
Packaging: Bulk
Package / Case: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
auf Bestellung 1077 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
132+ | 3.69 EUR |
AUIRF4905L |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 42A TO262
Packaging: Tube
Package / Case: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Description: MOSFET P-CH 55V 42A TO262
Packaging: Tube
Package / Case: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Produkt ist nicht verfügbar
IPP65R150CFDXKSA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Description: MOSFET N-CH 650V 22.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Produkt ist nicht verfügbar
IPP65R310CFDXKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: MOSFET N-CH 650V 11.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
IPP65R150CFDXKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Description: MOSFET N-CH 650V 22.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Produkt ist nicht verfügbar
S99-50542 |
Produkt ist nicht verfügbar
EVALTDA388121VOUTTOBO1 |
Hersteller: Infineon Technologies
Description: EVALTDA388121VOUTTO
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 12A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38812
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Description: EVALTDA388121VOUTTO
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 12A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38812
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
EVALTDA3881233VOUTTOBO1 |
Hersteller: Infineon Technologies
Description: EVALTDA3881233VOUTTO
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 4V ~ 16V
Current - Output: 12A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38812
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Description: EVALTDA3881233VOUTTO
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 4V ~ 16V
Current - Output: 12A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38812
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
EVALTDA388131VOUTTOBO1 |
Hersteller: Infineon Technologies
Description: EVALTDA388131VOUTTOB
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 12A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38813
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Description: EVALTDA388131VOUTTOB
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 12A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38813
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
EVALTDA388255VOUTTOBO1 |
Hersteller: Infineon Technologies
Description: EVALTDA388255VOUTTOBO
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38825
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Description: EVALTDA388255VOUTTOBO
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38825
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
EVALTDA388251VOUTTOBO1 |
Hersteller: Infineon Technologies
Description: EVALTDA388251VOUTTOB
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38825
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Description: EVALTDA388251VOUTTOB
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38825
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
EVALTDA3882533VOUTTOBO1 |
Hersteller: Infineon Technologies
Description: EVALTDA3882533VOUTTOB
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38825
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Description: EVALTDA3882533VOUTTOB
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38825
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
EVALTDA388261VOUTTOBO1 |
Hersteller: Infineon Technologies
Description: EVALTDA388261VOUTTOB
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38826
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Description: EVALTDA388261VOUTTOB
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38826
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
IPB70N04S406ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
Description: MOSFET N-CH 40V 70A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 1.57 EUR |
IPB70N04S406ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
Description: MOSFET N-CH 40V 70A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
auf Bestellung 1919 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.31 EUR |
10+ | 2.76 EUR |
100+ | 2.19 EUR |
500+ | 1.86 EUR |