Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (138886) > Seite 731 nach 2315
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TC1784F320F180EPBAKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA Packaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 180MHz Program Memory Size: 2.5MB (2.5M x 8) RAM Size: 176K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 8x10b, 32x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.235V ~ 3.47V Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SSC Peripherals: DMA, POR, WDT Supplier Device Package: PG-LFBGA-292-6 Number of I/O: 91 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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TC1784F320F180EPBAKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA Packaging: Cut Tape (CT) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 180MHz Program Memory Size: 2.5MB (2.5M x 8) RAM Size: 176K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 8x10b, 32x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.235V ~ 3.47V Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SSC Peripherals: DMA, POR, WDT Supplier Device Package: PG-LFBGA-292-6 Number of I/O: 91 DigiKey Programmable: Not Verified |
auf Bestellung 966 Stücke: Lieferzeit 10-14 Tag (e) |
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IR2301PBF | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 130ns, 50ns Channel Type: Independent Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.9V Current - Peak Output (Source, Sink): 200mA, 350mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C68320C-56LFXC | Infineon Technologies |
Description: IC USB 2.0 BRIDGE AT2LP 56VQFN Packaging: Tray Package / Case: 56-VFQFN Exposed Pad Function: Bridge, USB to ATA Interface: ATA Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Current - Supply: 50mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 56-QFN (8x8) DigiKey Programmable: Not Verified |
auf Bestellung 55 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C68003-20FNXI | Infineon Technologies |
Description: IC TRANSCEIVER FULL 1/1 20WLCSP Packaging: Tray Package / Case: 20-UFBGA, WLCSP Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 3.3V Number of Drivers/Receivers: 1/1 Protocol: USB 2.0 Supplier Device Package: 20-WLCSP (2.14x1.76) Duplex: Full |
Produkt ist nicht verfügbar |
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CY7C68003-20FNXIT | Infineon Technologies |
Description: IC TRANSCEIVER FULL 1/1 20WLCSP Packaging: Tape & Reel (TR) Package / Case: 20-UFBGA, WLCSP Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 3.3V Number of Drivers/Receivers: 1/1 Protocol: USB 2.0 Supplier Device Package: 20-WLCSP (2.14x1.76) Duplex: Full |
Produkt ist nicht verfügbar |
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IPB091N06N G | Infineon Technologies |
Description: MOSFET N-CHAN D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 130µA Supplier Device Package: PG-TO263-3 Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V |
Produkt ist nicht verfügbar |
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IPP091N06N G | Infineon Technologies |
Description: MOSFET N-CHAN TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 130µA Supplier Device Package: PG-TO220-3 Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V |
Produkt ist nicht verfügbar |
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CY7C1515AV18-250BZC | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 250 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Memory Interface: Parallel Memory Organization: 2M x 36 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C68013A-128AXI | Infineon Technologies |
Description: IC MCU USB PERIPH HI SPD 128LQFP Packaging: Bulk Package / Case: 128-LQFP Mounting Type: Surface Mount Interface: I2C, USB, USART RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Controller Series: CY7C680xx Program Memory Type: ROMless Applications: USB Microcontroller Core Processor: 8051 Supplier Device Package: 128-TQFP (14x20) Number of I/O: 40 DigiKey Programmable: Not Verified |
auf Bestellung 128 Stücke: Lieferzeit 10-14 Tag (e) |
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T1040N20TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 2200V 2200A DO200AC Packaging: Tray Package / Case: TO-200AC Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 1040 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (RMS)) (Max): 2200 A Voltage - Off State: 2.2 kV |
Produkt ist nicht verfügbar |
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IRSM515-015DA2 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 1.2A 23DIP Features: Bootstrap Circuit Packaging: Bulk Package / Case: 23-DIP Module Mounting Type: Through Hole Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Rds On (Typ): 5Ohm Applications: AC Motors Current - Output / Channel: 1.2A Current - Peak Output: 9A Technology: UMOS Voltage - Load: 400V (Max) Supplier Device Package: 23-DIPA Fault Protection: UVLO Load Type: Inductive |
auf Bestellung 5280 Stücke: Lieferzeit 10-14 Tag (e) |
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IRSM515-015DA2 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 1.2A 23DIP Features: Bootstrap Circuit Packaging: Tube Package / Case: 23-DIP Module Mounting Type: Through Hole Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Rds On (Typ): 5Ohm Applications: AC Motors Current - Output / Channel: 1.2A Current - Peak Output: 9A Technology: UMOS Voltage - Load: 400V (Max) Supplier Device Package: 23-DIPA Fault Protection: UVLO Load Type: Inductive |
Produkt ist nicht verfügbar |
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CY7C68013A-56BAXC | Infineon Technologies |
Description: IC MCU USB PERIPH HI SPD 56VFBGA Packaging: Bulk Package / Case: 56-VFBGA Mounting Type: Surface Mount Interface: I2C, USB, USART RAM Size: 16K x 8 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Controller Series: CY7C680xx Program Memory Type: ROMless Applications: USB Microcontroller Core Processor: 8051 Supplier Device Package: 56-VFBGA (5x5) Number of I/O: 24 DigiKey Programmable: Not Verified |
auf Bestellung 85 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C68013A-100AXI | Infineon Technologies |
Description: IC MCU USB PERIPH HI SPD 100LQFP Packaging: Bulk Package / Case: 100-LQFP Mounting Type: Surface Mount Interface: I2C, USB, USART RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Controller Series: CY7C680xx Program Memory Type: ROMless Applications: USB Microcontroller Core Processor: 8051 Supplier Device Package: 100-TQFP (14x20) Number of I/O: 40 DigiKey Programmable: Not Verified |
auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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PSB7530ZDW | Infineon Technologies |
Description: PSB7530ZDW Packaging: Bulk DigiKey Programmable: Not Verified |
auf Bestellung 2880 Stücke: Lieferzeit 10-14 Tag (e) |
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PSB7530 | Infineon Technologies |
Description: PSB7530 Packaging: Bulk DigiKey Programmable: Not Verified |
auf Bestellung 538 Stücke: Lieferzeit 10-14 Tag (e) |
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PSB7531ZDW | Infineon Technologies |
Description: LANTIQ PSB7531 TELECOMS IC Packaging: Bulk |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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PVA3054NPBF | Infineon Technologies |
Description: SSR RELAY SPST-NO 50MA 0-300V Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Termination Style: PC Pin Load Current: 50 mA Supplier Device Package: 8-DIP Modified Voltage - Load: 0 V ~ 300 V On-State Resistance (Max): 160 Ohms |
auf Bestellung 1815 Stücke: Lieferzeit 10-14 Tag (e) |
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SPW20N60CFDFKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 20.7A TO247-3 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: PG-TO247-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
auf Bestellung 360 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMZH120R060M1TXKSA1 | Infineon Technologies |
Description: SIC_DISCRETE Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 4.3mA Supplier Device Package: PG-TO247-4-11 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 191 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRGP4062D-E | Infineon Technologies |
Description: IGBT 600V 48A TO247AD Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 89 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A Supplier Device Package: PG-TO247AD Td (on/off) @ 25°C: 41ns/104ns Switching Energy: 115µJ (on), 600µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 50 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 72 A Power - Max: 250 W |
auf Bestellung 354 Stücke: Lieferzeit 10-14 Tag (e) |
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IRG7PH35UD-EP | Infineon Technologies |
Description: IGBT 1200V 50A COPAK247 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: Trench Td (on/off) @ 25°C: 30ns/160ns Switching Energy: 1.06mJ (on), 620µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 85 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 180 W |
auf Bestellung 436 Stücke: Lieferzeit 10-14 Tag (e) |
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IRG7PH35UD-EP | Infineon Technologies |
Description: IGBT 1200V 50A COPAK247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: Trench Td (on/off) @ 25°C: 30ns/160ns Switching Energy: 1.06mJ (on), 620µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 85 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 180 W |
Produkt ist nicht verfügbar |
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IRG7PH28UD1PBF | Infineon Technologies |
Description: IGBT 1200V 30A 115W TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A Supplier Device Package: TO-247AC IGBT Type: Trench Td (on/off) @ 25°C: -/229ns Switching Energy: 543µJ (off) Test Condition: 600V, 15A, 22Ohm, 15V Gate Charge: 90 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 115 W |
Produkt ist nicht verfügbar |
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IRG7PH35UD1MPBF | Infineon Technologies |
Description: IGBT 1200V 50A 179W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: Trench Td (on/off) @ 25°C: -/160ns Switching Energy: 620µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 130 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 179 W |
Produkt ist nicht verfügbar |
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IRG7PH50K10D-EPBF | Infineon Technologies |
Description: IGBT 1200V 90A 400W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 130 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 90ns/340ns Switching Energy: 2.3mJ (on), 1.6mJ (off) Test Condition: 600V, 35A, 5Ohm, 15V Gate Charge: 300 nC Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 400 W |
Produkt ist nicht verfügbar |
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IRG7PSH54K10DPBF | Infineon Technologies |
Description: IGBT 1200V 120A 520W TO274AA Packaging: Tube Package / Case: TO-274AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 170 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Supplier Device Package: SUPER-247™ (TO-274AA) Td (on/off) @ 25°C: 110ns/490ns Switching Energy: 4.8mJ (on), 2.8mJ (off) Test Condition: 600V, 50A, 5Ohm, 15V Gate Charge: 435 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 520 W |
Produkt ist nicht verfügbar |
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IRG7PK35UD1-EPBF | Infineon Technologies |
Description: IGBT 1400V 40A 167W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 20A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: -/150ns Switching Energy: 650µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 98 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1400 V Current - Collector Pulsed (Icm): 200 A Power - Max: 167 W |
Produkt ist nicht verfügbar |
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IRG7PK35UD1PbF | Infineon Technologies |
Description: IGBT 1400V 40A 167W TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 20A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: -/150ns Switching Energy: 650µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 98 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1400 V Current - Collector Pulsed (Icm): 200 A Power - Max: 167 W |
Produkt ist nicht verfügbar |
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BGA7M1N6E6327XTSA1 | Infineon Technologies |
Description: IC AMP LTE 1.8GHZ-2.2GHZ TSNP6 Packaging: Bulk Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.8GHz ~ 2.2GHz RF Type: LTE Voltage - Supply: 1.5V ~ 3.3V Gain: 13dB Current - Supply: 4.4mA Noise Figure: 0.6dB P1dB: -7dBm Supplier Device Package: PG-TSNP-6-2 |
auf Bestellung 855000 Stücke: Lieferzeit 10-14 Tag (e) |
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BGA777L7E6327XTSA1 | Infineon Technologies |
Description: IC AMP UMTS 2.3/2.7GHZ TSLP7-1 Packaging: Bulk Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 2.3GHz, 2.7GHz RF Type: UMTS Voltage - Supply: 2.6V ~ 3V Gain: 16.8dB Current - Supply: 10mA Noise Figure: 1.2dB P1dB: -11dBm Test Frequency: 2.3GHz Supplier Device Package: PG-TSLP-7-1 |
auf Bestellung 232500 Stücke: Lieferzeit 10-14 Tag (e) |
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BGA 700L16 E6327 | Infineon Technologies |
Description: IC AMP GSM 500MHZ-6GHZ TSLP7-1 Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 500MHz ~ 6GHz RF Type: GSM, DCS, PCS Voltage - Supply: 2.75V Gain: 17.5dB Noise Figure: 0.95dB P1dB: -20dBm Test Frequency: 1.575GHz Supplier Device Package: PG-TSLP-7-1 |
Produkt ist nicht verfügbar |
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IPTA60R180CM8XTMA1 | Infineon Technologies |
Description: IPTA60R180CM8XTMA1 Packaging: Tape & Reel (TR) Package / Case: 4-PowerLSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tj) Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 140µA Supplier Device Package: PG-LHSOF-4-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V |
Produkt ist nicht verfügbar |
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IPTA60R180CM8XTMA1 | Infineon Technologies |
Description: IPTA60R180CM8XTMA1 Packaging: Cut Tape (CT) Package / Case: 4-PowerLSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tj) Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 140µA Supplier Device Package: PG-LHSOF-4-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V |
auf Bestellung 75 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4128LQI-BL543 | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 56QFN Packaging: Tray Package / Case: 56-UFQFN Exposed Pad Sensitivity: -92dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 256kB Flash, 8kB ROM, 32kB SRAM Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 5.5V Power - Output: 3dBm Protocol: Bluetooth v4.2 Current - Receiving: 16.4mA ~ 21.5mA Data Rate (Max): 8Mbps Current - Transmitting: 12.5mA ~ 20mA Supplier Device Package: 56-QFN (7x7) GPIO: 36 Modulation: GFSK RF Family/Standard: Bluetooth Serial Interfaces: I2C, SPI, UART DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY8C4248FNI-BL573T | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 76WLCSP Packaging: Cut Tape (CT) Package / Case: 76-UFBGA, WLCSP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b; D/A 1x7b, 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA , LVD, POR, PWM, SmartCard, SmartSense, WDT Supplier Device Package: 76-WLCSP (4.04x3.87) Number of I/O: 36 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IRF6712STRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 17A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric SQ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 17A, 10V Power Dissipation (Max): 2.2W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 50µA Supplier Device Package: DIRECTFET™ SQ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 13 V |
Produkt ist nicht verfügbar |
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CY8C22645-24PVXA | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 48SSOP Packaging: Bulk Package / Case: 48-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 3x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Connectivity: I2C, IrDA, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 48-SSOP Number of I/O: 38 DigiKey Programmable: Not Verified |
auf Bestellung 4586 Stücke: Lieferzeit 10-14 Tag (e) |
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DZ800S17K3HOSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1700V AG62MM-2 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Supplier Device Package: AG-62MM-2 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 800 A |
auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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56DN06B02ELEMXPSA1 | Infineon Technologies |
Description: DIODE GP 600V 11140A E-EUPEC-0 Packaging: Bulk Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 11140A Supplier Device Package: E-EUPEC-0 Operating Temperature - Junction: 180°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 8000 A Current - Reverse Leakage @ Vr: 60 mA @ 600 V |
auf Bestellung 35 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C3665LTI-044 | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 68QFN Packaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: 8051 Data Converters: A/D 16x12b; D/A 4x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 38 DigiKey Programmable: Not Verified |
auf Bestellung 765 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS21E6433HTMA1 | Infineon Technologies |
Description: DIODE GEN PURP 200V 250MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
Produkt ist nicht verfügbar |
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BC849CE6327HTSA1 | Infineon Technologies |
Description: TRANS NPN 30V 0.1A SOT-23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 330 mW |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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KIT2K5WCCMTOLLTOBO1 | Infineon Technologies |
Description: TO LEADLESS ADAPTER Packaging: Bulk Accessory Type: Upgrade Kit |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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REF3K3WTPSICTOLLTOBO1 | Infineon Technologies |
Description: REF3K3WTPSICTOLLTOBO1 Packaging: Box Function: Power Factor Correction Type: Power Management Contents: Board(s) Supplied Contents: Board(s) Primary Attributes: Isolated Secondary Attributes: On-Board LEDs Embedded: Yes, MCU, 32-Bit |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C20324-12LQXI | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 24SQFN Packaging: Tray Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 12MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI Peripherals: LVD, POR, WDT Supplier Device Package: 24-QFN (4x4) Number of I/O: 20 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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AUIRF1018ES | Infineon Technologies |
Description: MOSFET N-CH 60V 79A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V |
Produkt ist nicht verfügbar |
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BTG7016A1EPWDBTOBO1 | Infineon Technologies |
Description: BTG7016A-1EPW DB Packaging: Bulk Function: Switch Type: Power Management Contents: Board(s) Utilized IC / Part: BTG7016A-1EPW Platform: Arduino |
Produkt ist nicht verfügbar |
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AUIRFR4105 | Infineon Technologies |
Description: MOSFET N-CH 55V 20A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
Produkt ist nicht verfügbar |
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IMW65R040M2HXKSA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V Power Dissipation (Max): 172W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 4.6mA Supplier Device Package: PG-TO247-3-40 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V |
auf Bestellung 215 Stücke: Lieferzeit 10-14 Tag (e) |
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FS500R17OE4DBOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 740A 3000W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 740 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 3000 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 40 nF @ 25 V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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TLS805B1LDVXUMA1 | Infineon Technologies |
Description: IC REG LIN POS ADJ 50MA TSON-10 Packaging: Tape & Reel (TR) Package / Case: 10-TFDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 50mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 1 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: PG-TSON-10 Voltage - Output (Max): 41.7V Voltage - Output (Min/Fixed): 1.2V Control Features: Enable Grade: Automotive PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.3V @ 50mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 11 µA Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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IPP029N06NXKSA1 | Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 75µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 30 V |
Produkt ist nicht verfügbar |
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S25HL512TFABHB010 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 24BGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Memory Interface: SPI - Quad I/O, QPI Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY9AF144NBPMC-G-JNE2 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 100LQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 24x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 83 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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T2600N16TOFVTXPSA1 | Infineon Technologies |
Description: STD THYR/DIODEN DISC BG-T10035-1 Packaging: Tray Package / Case: TO-200AD Mounting Type: Chassis Mount Operating Temperature: 135°C (TJ) Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 2610 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 4100 A Voltage - Off State: 1.8 kV |
Produkt ist nicht verfügbar |
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T2600N18TOFVTXPSA1 | Infineon Technologies |
Description: STD THYR/DIODEN DISC BG-T10026K- Packaging: Tray Package / Case: TO-200AD Mounting Type: Chassis Mount Operating Temperature: 135°C (TJ) Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 2610 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 4100 A Voltage - Off State: 1.8 kV |
Produkt ist nicht verfügbar |
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T3800N18TOFVTXPSA1 | Infineon Technologies |
Description: STD THYR/DIODEN DISC BG-T11126K- Packaging: Tray Package / Case: TO-200AE Mounting Type: Chassis Mount Operating Temperature: 135°C (TJ) Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 3800 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 5970 A Voltage - Off State: 1.8 kV |
Produkt ist nicht verfügbar |
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IDH03SG60CXKSA2 | Infineon Technologies |
Description: DIODE SIL CARB 600V 3A TO220-2-1 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 60pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
Produkt ist nicht verfügbar |
TC1784F320F180EPBAKXUMA1 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.235V ~ 3.47V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 91
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.235V ~ 3.47V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 91
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
TC1784F320F180EPBAKXUMA1 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.235V ~ 3.47V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 91
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.235V ~ 3.47V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 91
DigiKey Programmable: Not Verified
auf Bestellung 966 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 43.26 EUR |
10+ | 39.9 EUR |
25+ | 38.11 EUR |
100+ | 34.07 EUR |
250+ | 32.5 EUR |
500+ | 30.94 EUR |
IR2301PBF |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY7C68320C-56LFXC |
Hersteller: Infineon Technologies
Description: IC USB 2.0 BRIDGE AT2LP 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Function: Bridge, USB to ATA
Interface: ATA
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 50mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
Description: IC USB 2.0 BRIDGE AT2LP 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Function: Bridge, USB to ATA
Interface: ATA
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 50mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 16.65 EUR |
10+ | 15.03 EUR |
25+ | 14.33 EUR |
CY7C68003-20FNXI |
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 20WLCSP
Packaging: Tray
Package / Case: 20-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Number of Drivers/Receivers: 1/1
Protocol: USB 2.0
Supplier Device Package: 20-WLCSP (2.14x1.76)
Duplex: Full
Description: IC TRANSCEIVER FULL 1/1 20WLCSP
Packaging: Tray
Package / Case: 20-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Number of Drivers/Receivers: 1/1
Protocol: USB 2.0
Supplier Device Package: 20-WLCSP (2.14x1.76)
Duplex: Full
Produkt ist nicht verfügbar
CY7C68003-20FNXIT |
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 20WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 20-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Number of Drivers/Receivers: 1/1
Protocol: USB 2.0
Supplier Device Package: 20-WLCSP (2.14x1.76)
Duplex: Full
Description: IC TRANSCEIVER FULL 1/1 20WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 20-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Number of Drivers/Receivers: 1/1
Protocol: USB 2.0
Supplier Device Package: 20-WLCSP (2.14x1.76)
Duplex: Full
Produkt ist nicht verfügbar
IPB091N06N G |
Hersteller: Infineon Technologies
Description: MOSFET N-CHAN D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: PG-TO263-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V
Description: MOSFET N-CHAN D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: PG-TO263-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V
Produkt ist nicht verfügbar
IPP091N06N G |
Hersteller: Infineon Technologies
Description: MOSFET N-CHAN TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: PG-TO220-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V
Description: MOSFET N-CHAN TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: PG-TO220-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V
Produkt ist nicht verfügbar
CY7C1515AV18-250BZC |
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY7C68013A-128AXI |
Hersteller: Infineon Technologies
Description: IC MCU USB PERIPH HI SPD 128LQFP
Packaging: Bulk
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 128-TQFP (14x20)
Number of I/O: 40
DigiKey Programmable: Not Verified
Description: IC MCU USB PERIPH HI SPD 128LQFP
Packaging: Bulk
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 128-TQFP (14x20)
Number of I/O: 40
DigiKey Programmable: Not Verified
auf Bestellung 128 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 53.97 EUR |
T1040N20TOFVTXPSA1 |
Hersteller: Infineon Technologies
Description: SCR MODULE 2200V 2200A DO200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1040 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 2200 A
Voltage - Off State: 2.2 kV
Description: SCR MODULE 2200V 2200A DO200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1040 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 2200 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
IRSM515-015DA2 |
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.2A 23DIP
Features: Bootstrap Circuit
Packaging: Bulk
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm
Applications: AC Motors
Current - Output / Channel: 1.2A
Current - Peak Output: 9A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIPA
Fault Protection: UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 1.2A 23DIP
Features: Bootstrap Circuit
Packaging: Bulk
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm
Applications: AC Motors
Current - Output / Channel: 1.2A
Current - Peak Output: 9A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIPA
Fault Protection: UVLO
Load Type: Inductive
auf Bestellung 5280 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 6.94 EUR |
IRSM515-015DA2 |
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.2A 23DIP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm
Applications: AC Motors
Current - Output / Channel: 1.2A
Current - Peak Output: 9A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIPA
Fault Protection: UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 1.2A 23DIP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm
Applications: AC Motors
Current - Output / Channel: 1.2A
Current - Peak Output: 9A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIPA
Fault Protection: UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
CY7C68013A-56BAXC |
Hersteller: Infineon Technologies
Description: IC MCU USB PERIPH HI SPD 56VFBGA
Packaging: Bulk
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 56-VFBGA (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU USB PERIPH HI SPD 56VFBGA
Packaging: Bulk
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 56-VFBGA (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
auf Bestellung 85 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 19.67 EUR |
CY7C68013A-100AXI |
Hersteller: Infineon Technologies
Description: IC MCU USB PERIPH HI SPD 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 100-TQFP (14x20)
Number of I/O: 40
DigiKey Programmable: Not Verified
Description: IC MCU USB PERIPH HI SPD 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 100-TQFP (14x20)
Number of I/O: 40
DigiKey Programmable: Not Verified
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 52.78 EUR |
PSB7530ZDW |
Hersteller: Infineon Technologies
Description: PSB7530ZDW
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: PSB7530ZDW
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 2880 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 10.09 EUR |
PSB7530 |
Hersteller: Infineon Technologies
Description: PSB7530
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: PSB7530
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 538 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 10.09 EUR |
PSB7531ZDW |
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 15.52 EUR |
PVA3054NPBF |
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 50MA 0-300V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 50 mA
Supplier Device Package: 8-DIP Modified
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
Description: SSR RELAY SPST-NO 50MA 0-300V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 50 mA
Supplier Device Package: 8-DIP Modified
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
auf Bestellung 1815 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 11.55 EUR |
10+ | 10.83 EUR |
25+ | 9.62 EUR |
50+ | 9.14 EUR |
100+ | 8.66 EUR |
250+ | 8.47 EUR |
SPW20N60CFDFKSA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 20.7A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Description: MOSFET N-CH 650V 20.7A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
87+ | 5.49 EUR |
AIMZH120R060M1TXKSA1 |
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 191 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 23 EUR |
10+ | 20.27 EUR |
AUIRGP4062D-E |
Hersteller: Infineon Technologies
Description: IGBT 600V 48A TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: PG-TO247AD
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
Description: IGBT 600V 48A TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: PG-TO247AD
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
auf Bestellung 354 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 10.5 EUR |
IRG7PH35UD-EP |
Hersteller: Infineon Technologies
Description: IGBT 1200V 50A COPAK247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 180 W
Description: IGBT 1200V 50A COPAK247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 180 W
auf Bestellung 436 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
65+ | 7.6 EUR |
IRG7PH35UD-EP |
Hersteller: Infineon Technologies
Description: IGBT 1200V 50A COPAK247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 180 W
Description: IGBT 1200V 50A COPAK247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 180 W
Produkt ist nicht verfügbar
IRG7PH28UD1PBF |
Hersteller: Infineon Technologies
Description: IGBT 1200V 30A 115W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: -/229ns
Switching Energy: 543µJ (off)
Test Condition: 600V, 15A, 22Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 115 W
Description: IGBT 1200V 30A 115W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: -/229ns
Switching Energy: 543µJ (off)
Test Condition: 600V, 15A, 22Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 115 W
Produkt ist nicht verfügbar
IRG7PH35UD1MPBF |
Hersteller: Infineon Technologies
Description: IGBT 1200V 50A 179W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: -/160ns
Switching Energy: 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 179 W
Description: IGBT 1200V 50A 179W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: -/160ns
Switching Energy: 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 179 W
Produkt ist nicht verfügbar
IRG7PH50K10D-EPBF |
Hersteller: Infineon Technologies
Description: IGBT 1200V 90A 400W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 90ns/340ns
Switching Energy: 2.3mJ (on), 1.6mJ (off)
Test Condition: 600V, 35A, 5Ohm, 15V
Gate Charge: 300 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 400 W
Description: IGBT 1200V 90A 400W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 90ns/340ns
Switching Energy: 2.3mJ (on), 1.6mJ (off)
Test Condition: 600V, 35A, 5Ohm, 15V
Gate Charge: 300 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 400 W
Produkt ist nicht verfügbar
IRG7PSH54K10DPBF |
Hersteller: Infineon Technologies
Description: IGBT 1200V 120A 520W TO274AA
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Supplier Device Package: SUPER-247™ (TO-274AA)
Td (on/off) @ 25°C: 110ns/490ns
Switching Energy: 4.8mJ (on), 2.8mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 435 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 520 W
Description: IGBT 1200V 120A 520W TO274AA
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Supplier Device Package: SUPER-247™ (TO-274AA)
Td (on/off) @ 25°C: 110ns/490ns
Switching Energy: 4.8mJ (on), 2.8mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 435 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 520 W
Produkt ist nicht verfügbar
IRG7PK35UD1-EPBF |
Hersteller: Infineon Technologies
Description: IGBT 1400V 40A 167W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: -/150ns
Switching Energy: 650µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 167 W
Description: IGBT 1400V 40A 167W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: -/150ns
Switching Energy: 650µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 167 W
Produkt ist nicht verfügbar
IRG7PK35UD1PbF |
Hersteller: Infineon Technologies
Description: IGBT 1400V 40A 167W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 20A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: -/150ns
Switching Energy: 650µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 167 W
Description: IGBT 1400V 40A 167W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 20A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: -/150ns
Switching Energy: 650µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 167 W
Produkt ist nicht verfügbar
BGA7M1N6E6327XTSA1 |
Hersteller: Infineon Technologies
Description: IC AMP LTE 1.8GHZ-2.2GHZ TSNP6
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.8GHz ~ 2.2GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13dB
Current - Supply: 4.4mA
Noise Figure: 0.6dB
P1dB: -7dBm
Supplier Device Package: PG-TSNP-6-2
Description: IC AMP LTE 1.8GHZ-2.2GHZ TSNP6
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.8GHz ~ 2.2GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13dB
Current - Supply: 4.4mA
Noise Figure: 0.6dB
P1dB: -7dBm
Supplier Device Package: PG-TSNP-6-2
auf Bestellung 855000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
702+ | 0.71 EUR |
BGA777L7E6327XTSA1 |
Hersteller: Infineon Technologies
Description: IC AMP UMTS 2.3/2.7GHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz, 2.7GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 16.8dB
Current - Supply: 10mA
Noise Figure: 1.2dB
P1dB: -11dBm
Test Frequency: 2.3GHz
Supplier Device Package: PG-TSLP-7-1
Description: IC AMP UMTS 2.3/2.7GHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz, 2.7GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 16.8dB
Current - Supply: 10mA
Noise Figure: 1.2dB
P1dB: -11dBm
Test Frequency: 2.3GHz
Supplier Device Package: PG-TSLP-7-1
auf Bestellung 232500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
799+ | 0.63 EUR |
BGA 700L16 E6327 |
Hersteller: Infineon Technologies
Description: IC AMP GSM 500MHZ-6GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: GSM, DCS, PCS
Voltage - Supply: 2.75V
Gain: 17.5dB
Noise Figure: 0.95dB
P1dB: -20dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSLP-7-1
Description: IC AMP GSM 500MHZ-6GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: GSM, DCS, PCS
Voltage - Supply: 2.75V
Gain: 17.5dB
Noise Figure: 0.95dB
P1dB: -20dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSLP-7-1
Produkt ist nicht verfügbar
IPTA60R180CM8XTMA1 |
Hersteller: Infineon Technologies
Description: IPTA60R180CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerLSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-LHSOF-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
Description: IPTA60R180CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerLSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-LHSOF-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
Produkt ist nicht verfügbar
IPTA60R180CM8XTMA1 |
Hersteller: Infineon Technologies
Description: IPTA60R180CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 4-PowerLSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-LHSOF-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
Description: IPTA60R180CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 4-PowerLSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-LHSOF-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.29 EUR |
10+ | 2.73 EUR |
CY8C4128LQI-BL543 |
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 8kB ROM, 32kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 8Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 8kB ROM, 32kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 8Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY8C4248FNI-BL573T |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Packaging: Cut Tape (CT)
Package / Case: 76-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b; D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA , LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 76-WLCSP (4.04x3.87)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Packaging: Cut Tape (CT)
Package / Case: 76-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b; D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA , LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 76-WLCSP (4.04x3.87)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IRF6712STRPBF |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 17A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 17A, 10V
Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Supplier Device Package: DIRECTFET™ SQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 13 V
Description: MOSFET N-CH 25V 17A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 17A, 10V
Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Supplier Device Package: DIRECTFET™ SQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 13 V
Produkt ist nicht verfügbar
CY8C22645-24PVXA |
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 48SSOP
Packaging: Bulk
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 3x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-SSOP
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 48SSOP
Packaging: Bulk
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 3x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-SSOP
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 4586 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
62+ | 8.07 EUR |
DZ800S17K3HOSA1 |
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1700V AG62MM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Supplier Device Package: AG-62MM-2
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 800 A
Description: DIODE MODULE GP 1700V AG62MM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Supplier Device Package: AG-62MM-2
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 800 A
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 266.83 EUR |
10+ | 249.91 EUR |
56DN06B02ELEMXPSA1 |
Hersteller: Infineon Technologies
Description: DIODE GP 600V 11140A E-EUPEC-0
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 11140A
Supplier Device Package: E-EUPEC-0
Operating Temperature - Junction: 180°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 8000 A
Current - Reverse Leakage @ Vr: 60 mA @ 600 V
Description: DIODE GP 600V 11140A E-EUPEC-0
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 11140A
Supplier Device Package: E-EUPEC-0
Operating Temperature - Junction: 180°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 8000 A
Current - Reverse Leakage @ Vr: 60 mA @ 600 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 522.28 EUR |
CY8C3665LTI-044 |
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 765 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 22.44 EUR |
10+ | 20.61 EUR |
25+ | 19.76 EUR |
80+ | 17.41 EUR |
260+ | 16.56 EUR |
520+ | 15.49 EUR |
BAS21E6433HTMA1 |
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 200V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE GEN PURP 200V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Produkt ist nicht verfügbar
BC849CE6327HTSA1 |
Hersteller: Infineon Technologies
Description: TRANS NPN 30V 0.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Description: TRANS NPN 30V 0.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8689+ | 0.047 EUR |
KIT2K5WCCMTOLLTOBO1 |
Hersteller: Infineon Technologies
Description: TO LEADLESS ADAPTER
Packaging: Bulk
Accessory Type: Upgrade Kit
Description: TO LEADLESS ADAPTER
Packaging: Bulk
Accessory Type: Upgrade Kit
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 160.32 EUR |
REF3K3WTPSICTOLLTOBO1 |
Hersteller: Infineon Technologies
Description: REF3K3WTPSICTOLLTOBO1
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Contents: Board(s)
Supplied Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU, 32-Bit
Description: REF3K3WTPSICTOLLTOBO1
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Contents: Board(s)
Supplied Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU, 32-Bit
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 959.89 EUR |
CY8C20324-12LQXI |
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 24SQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 24SQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
AUIRF1018ES |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 79A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
Description: MOSFET N-CH 60V 79A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
Produkt ist nicht verfügbar
BTG7016A1EPWDBTOBO1 |
Hersteller: Infineon Technologies
Description: BTG7016A-1EPW DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7016A-1EPW
Platform: Arduino
Description: BTG7016A-1EPW DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7016A-1EPW
Platform: Arduino
Produkt ist nicht verfügbar
AUIRFR4105 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 20A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET N-CH 55V 20A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar
IMW65R040M2HXKSA1 |
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
auf Bestellung 215 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 19.4 EUR |
10+ | 13.64 EUR |
25+ | 12.16 EUR |
100+ | 10.5 EUR |
FS500R17OE4DBOSA1 |
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 740A 3000W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 740 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3000 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
Description: IGBT MOD 1700V 740A 3000W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 740 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3000 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 1253.51 EUR |
TLS805B1LDVXUMA1 |
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 50MA TSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Max): 41.7V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 50mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 11 µA
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ 50MA TSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Max): 41.7V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 50mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 11 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
IPP029N06NXKSA1 |
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 75µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 75µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 30 V
Produkt ist nicht verfügbar
S25HL512TFABHB010 |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY9AF144NBPMC-G-JNE2 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
T2600N16TOFVTXPSA1 |
Hersteller: Infineon Technologies
Description: STD THYR/DIODEN DISC BG-T10035-1
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2610 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 1.8 kV
Description: STD THYR/DIODEN DISC BG-T10035-1
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2610 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
T2600N18TOFVTXPSA1 |
Hersteller: Infineon Technologies
Description: STD THYR/DIODEN DISC BG-T10026K-
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2610 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 1.8 kV
Description: STD THYR/DIODEN DISC BG-T10026K-
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2610 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
T3800N18TOFVTXPSA1 |
Hersteller: Infineon Technologies
Description: STD THYR/DIODEN DISC BG-T11126K-
Packaging: Tray
Package / Case: TO-200AE
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 5970 A
Voltage - Off State: 1.8 kV
Description: STD THYR/DIODEN DISC BG-T11126K-
Packaging: Tray
Package / Case: TO-200AE
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 5970 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
IDH03SG60CXKSA2 |
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 3A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE SIL CARB 600V 3A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar