![IRG7PK35UD1PBF IRG7PK35UD1PBF](https://download.siliconexpert.com/pdfs/2013/6/11/2/34/49/523/inr_/manual/irg7ph37k10dpbf.jpg)
IRG7PK35UD1PBF Infineon Technologies
![3293irg7pk35ud1pbf.pdf](/images/adobe-acrobat.png)
Trans IGBT Chip N-CH 1400V 40A 167000mW 3-Pin(3+Tab) TO-247AC Tube
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details IRG7PK35UD1PBF Infineon Technologies
Description: IGBT 1400V 40A 167W TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 20A, Supplier Device Package: TO-247AC, Td (on/off) @ 25°C: -/150ns, Switching Energy: 650µJ (off), Test Condition: 600V, 20A, 10Ohm, 15V, Gate Charge: 98 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1400 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 167 W.
Weitere Produktangebote IRG7PK35UD1PBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
![]() |
IRG7PK35UD1PbF | Hersteller : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 20A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: -/150ns Switching Energy: 650µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 98 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1400 V Current - Collector Pulsed (Icm): 200 A Power - Max: 167 W |
Produkt ist nicht verfügbar |
|
![]() |
IRG7PK35UD1PbF | Hersteller : Infineon / IR |
![]() |
Produkt ist nicht verfügbar |