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DF1000R17IE4DB2BOSA1 Infineon Technologies
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Trans IGBT Module N-CH 1700V 1.39KA 6250mW Automotive 12-Pin PRIME3-1 Tray
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Technische Details DF1000R17IE4DB2BOSA1 Infineon Technologies
Description: IGBT MODULE 1700V 6250W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A, NTC Thermistor: Yes, Supplier Device Package: Module, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 6250 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 81 nF @ 25 V.
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DF1000R17IE4DB2BOSA1 | Hersteller : Infineon Technologies |
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DF1000R17IE4DB2BOSA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A NTC Thermistor: Yes Supplier Device Package: Module Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 6250 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 81 nF @ 25 V |
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