Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (140117) > Seite 475 nach 2336
Foto | Bezeichnung | Hersteller | Beschreibung |
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XMC1302T028X0128ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 28TSSOP Packaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 14x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, IrDA, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-28-16 Number of I/O: 26 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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FS50R17KE3B17BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2B-311 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A NTC Thermistor: No Supplier Device Package: AG-ECONO2B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 82 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 345 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V |
Produkt ist nicht verfügbar |
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PEF55016EV1.3-G | Infineon Technologies |
Description: GEMINAX-D16 PRO E V2.1 16 CHANNE Packaging: Bulk |
auf Bestellung 3960 Stücke: Lieferzeit 10-14 Tag (e) |
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DF23MR12W1M1B11BOMA1 | Infineon Technologies |
Description: SIC 2N-CH 1200V AG-EASY1BM-2 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: AG-EASY1BM-2 |
Produkt ist nicht verfügbar |
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FF900R12IE4VPBOSA1 | Infineon Technologies |
Description: PP, IHM I, XHP 1,7KV Packaging: Bulk Part Status: Active |
auf Bestellung 117 Stücke: Lieferzeit 10-14 Tag (e) |
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FF900R12ME7WB11BPSA1 | Infineon Technologies |
Description: MEDIUM POWER ECONO Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: AG-ECONOD IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 890 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 122 nF @ 25 V |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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IR3565BMFS08TRP | Infineon Technologies |
Description: IC DC/DC MULTIPHASE CTLR Packaging: Bulk |
auf Bestellung 49378 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1049G30-10VXI | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 36SOJ Packaging: Tube Package / Case: 36-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 36-SOJ Part Status: Active Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 519 Stücke: Lieferzeit 10-14 Tag (e) |
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IDDD10G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 29A HDSOP-10 Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 495pF @ 1V, 1MHz Current - Average Rectified (Io): 29A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 33 µA @ 420 V |
Produkt ist nicht verfügbar |
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IDDD10G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 29A HDSOP-10 Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 495pF @ 1V, 1MHz Current - Average Rectified (Io): 29A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 33 µA @ 420 V |
auf Bestellung 1538 Stücke: Lieferzeit 10-14 Tag (e) |
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IDDD16G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 43A HDSOP-10 Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 783pF @ 1V, 1MHz Current - Average Rectified (Io): 43A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 53 µA @ 420 V |
auf Bestellung 3400 Stücke: Lieferzeit 10-14 Tag (e) |
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IDDD16G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 43A HDSOP-10 Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 783pF @ 1V, 1MHz Current - Average Rectified (Io): 43A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 53 µA @ 420 V |
auf Bestellung 4735 Stücke: Lieferzeit 10-14 Tag (e) |
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PTF180101M V1 | Infineon Technologies |
Description: IC FET RF LDMOS 10W TSSOP-10 Packaging: Tape & Reel (TR) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Current Rating (Amps): 1µA Mounting Type: Surface Mount Frequency: 1.99GHz Power - Output: 10W Gain: 16.5dB Technology: LDMOS Supplier Device Package: PG-RFP-10 Part Status: Discontinued at Digi-Key Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 180 mA |
Produkt ist nicht verfügbar |
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PTF210101M V1 | Infineon Technologies |
Description: IC FET RF LDMOS 10W TSSOP-10 Packaging: Tape & Reel (TR) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Current Rating (Amps): 1µA Mounting Type: Surface Mount Frequency: 2.17GHz Power - Output: 10W Gain: 15dB Technology: LDMOS Supplier Device Package: PG-RFP-10 Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 180 mA |
Produkt ist nicht verfügbar |
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BSB280N15NZ3G | Infineon Technologies |
Description: BSB280N15 - 12V-300V N-CHANNEL P Packaging: Bulk Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 60µA Supplier Device Package: MG-WDSON-2-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V |
Produkt ist nicht verfügbar |
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PXB4330EV2.1 | Infineon Technologies | Description: AOP ATM OAM PROCESSOR |
auf Bestellung 246 Stücke: Lieferzeit 10-14 Tag (e) |
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PXB4330EV1.1 | Infineon Technologies | Description: AOP ATM OAM PROCESSOR |
Produkt ist nicht verfügbar |
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BTS56033LBBXUMA1 | Infineon Technologies | Description: BTS56033-LBB - SPOC+ SPI POWER C |
Produkt ist nicht verfügbar |
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TD215N22KOFTIMHPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK BG-PB50AT Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 215 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 410 A Voltage - Off State: 2.2 kV |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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DD390N22STIMHPSA1 | Infineon Technologies |
Description: DIODE MOD GP 2200V BGPB50SB Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 390A Supplier Device Package: BG-PB50SB-1 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 800 A Current - Reverse Leakage @ Vr: 1 mA @ 2200 V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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BSM200GB120DLCE3256HOSA1 | Infineon Technologies |
Description: BSM200GB120DLC - IGBT Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 420 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1550 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
Produkt ist nicht verfügbar |
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BA892-02V | Infineon Technologies |
Description: SILICON RF SWITCHING DIODE Packaging: Bulk Package / Case: SC-79, SOD-523 Diode Type: Standard - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz Resistance @ If, F: 500mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: PG-SC79-2-1 Part Status: Active Current - Max: 100 mA |
Produkt ist nicht verfügbar |
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IRL40S212ARMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 195A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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SLE 66R35 MCC2 | Infineon Technologies | Description: IC RFID TRANSP 13.56MHZ MCC2-2-1 |
Produkt ist nicht verfügbar |
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SP4001511XTMA1 | Infineon Technologies |
Description: SENSOR 203.05PSIA DSOSP14 Packaging: Tape & Reel (TR) Package / Case: 14-BSSOP (0.220", 5.60mm Width) Output Type: RF Mounting Type: Surface Mount Operating Pressure: 14.5PSI ~ 203.05PSI (100kPa ~ 1400kPa) Pressure Type: Absolute Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3.6V Applications: Board Mount Supplier Device Package: PG-DSOSP-14-82 Port Style: No Port Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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SP4001511XTMA1 | Infineon Technologies |
Description: SENSOR 203.05PSIA DSOSP14 Packaging: Cut Tape (CT) Package / Case: 14-BSSOP (0.220", 5.60mm Width) Output Type: RF Mounting Type: Surface Mount Operating Pressure: 14.5PSI ~ 203.05PSI (100kPa ~ 1400kPa) Pressure Type: Absolute Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3.6V Applications: Board Mount Supplier Device Package: PG-DSOSP-14-82 Port Style: No Port Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 1143 Stücke: Lieferzeit 10-14 Tag (e) |
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SAF-XE164FN-24F80L AA | Infineon Technologies | Description: IC MCU 16BIT 192KB FLASH 100LQFP |
Produkt ist nicht verfügbar |
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IPB120N06S403ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 60V 120A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FF23MR12W1M1C11BPSA1 | Infineon Technologies |
Description: LOW POWER EASY AG-EASY1BM-2 Packaging: Tray Part Status: Obsolete |
Produkt ist nicht verfügbar |
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BGA824N6E6329XTSA1 | Infineon Technologies |
Description: IC AMP GALI 1.164-1.615GHZ TSNP6 Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.164GHz ~ 1.615GHz RF Type: Galileo, GLONASS, GPS Voltage - Supply: 1.5V ~ 3.6V Gain: 19.5dB Current - Supply: 3.9mA Noise Figure: 0.7dB P1dB: -9dBm Test Frequency: 1.164GHz ~ 1.3GHz Supplier Device Package: PG-TSNP-6-2 Part Status: Active |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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EVALISO1H815GTOBO1 | Infineon Technologies |
Description: EVAL ISO1H815G Packaging: Bulk Function: Power Distribution Switch (Load Switch) Type: Power Management Utilized IC / Part: ISO1H815G Supplied Contents: Board(s) Primary Attributes: 8-Channel (Octal) Embedded: No Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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T3801N36TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 3600V 6020A DO200AE Packaging: Tray Package / Case: TO-200AF Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 350 mA Current - Gate Trigger (Igt) (Max): 350 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 91000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 5370 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 6020 A Voltage - Off State: 3.6 kV |
Produkt ist nicht verfügbar |
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IFX54211MBV33HTSA1 | Infineon Technologies |
Description: IC REG LINEAR 3.3V 150MA SCT595 Packaging: Bulk Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 18V Number of Regulators: 1 Supplier Device Package: PG-SCT595-5-1 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Obsolete PSRR: 63dB (10kHz) Voltage Dropout (Max): 0.57V @ 150mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 200 µA |
auf Bestellung 170749 Stücke: Lieferzeit 10-14 Tag (e) |
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ISP98DP10LMXTSA1 | Infineon Technologies |
Description: SMALL SIGNAL MOSFETS PG-SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 1.55A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 900mA, 10V Power Dissipation (Max): 1.8W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2V @ 165µA Supplier Device Package: PG-SOT223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 50 V |
Produkt ist nicht verfügbar |
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ISP98DP10LMXTSA1 | Infineon Technologies |
Description: SMALL SIGNAL MOSFETS PG-SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 1.55A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 900mA, 10V Power Dissipation (Max): 1.8W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2V @ 165µA Supplier Device Package: PG-SOT223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 50 V |
auf Bestellung 405 Stücke: Lieferzeit 10-14 Tag (e) |
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IPN65R1K5CE | Infineon Technologies |
Description: SMALL SIGNAL FIELD-EFFECT TRANSI Packaging: Bulk Package / Case: TO-261-3 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-SOT223 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPN65R1K5CEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 5.2A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-SOT223 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V |
Produkt ist nicht verfügbar |
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MA15037577NDSA1 | Infineon Technologies | Description: POWER MODULE IGBT |
Produkt ist nicht verfügbar |
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IPW65R310CFD | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V Power Dissipation (Max): 104.2W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 440µA Supplier Device Package: PG-TO247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
auf Bestellung 10341 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW65R155CFD7XKSA1 | Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 320µA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW65R125CFD7XKSA1 | Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 10V Power Dissipation (Max): 98W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 420µA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V |
auf Bestellung 235 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW65R090CFD7XKSA1 | Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V Power Dissipation (Max): 127W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 630µA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V |
auf Bestellung 179 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW65R018CFD7XKSA1 | Infineon Technologies |
Description: 650 V COOLMOS CFD7 SUPERJUNCTION Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.91mA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V |
auf Bestellung 228 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW65R110CFD7XKSA1 | Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 9.7A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 480µA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW65R050CFD7AXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 45A TO247-3-41 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 224 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW65R029CFD7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 69A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V Power Dissipation (Max): 305W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.79mA Supplier Device Package: PG-TO247-3 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V |
auf Bestellung 190 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW65R15OCFDAFKSA1 | Infineon Technologies |
Description: N-CHANNEL AUTOMOTIVE MOSFET Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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IPW65F6048A | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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TLV493DA2BWXTMA1 | Infineon Technologies |
Description: XENSIV 3D MAGNETIC HALL SENSOR S Packaging: Tape & Reel (TR) Features: Programmable Package / Case: 5-UFBGA, WLCSP Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -20°C ~ 85°C (TJ) Voltage - Supply: 2.8V ~ 3.5V Technology: Hall Effect Resolution: 12 b Sensing Range: ±160mT Current - Supply (Max): 130nA Supplier Device Package: 5-WLCSP (1.13x0.93) Part Status: Active |
Produkt ist nicht verfügbar |
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TLV493DA2BWXTMA1 | Infineon Technologies |
Description: XENSIV 3D MAGNETIC HALL SENSOR S Packaging: Cut Tape (CT) Features: Programmable Package / Case: 5-UFBGA, WLCSP Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -20°C ~ 85°C (TJ) Voltage - Supply: 2.8V ~ 3.5V Technology: Hall Effect Resolution: 12 b Sensing Range: ±160mT Current - Supply (Max): 130nA Supplier Device Package: 5-WLCSP (1.13x0.93) Part Status: Active |
auf Bestellung 1832 Stücke: Lieferzeit 10-14 Tag (e) |
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CYTVIIBE1MSKTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR CYT2B75CADES Packaging: Bulk Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M4F Board Type: Evaluation Platform Utilized IC / Part: CYT2B75CADES, TJA1057GTJ Platform: Arduino Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar |
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CY241V08SXC-41 | Infineon Technologies |
Description: IC CLOCK GEN MPEG W/VCXO 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Frequency - Max: 27MHz Type: Clock Generator Supplier Device Package: 8-SOIC Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 5267 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA60R120P7E8191XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V TO220FP-3 Packaging: Tube Part Status: Active |
Produkt ist nicht verfügbar |
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BBY5305WH6327XTSA1554 | Infineon Technologies | Description: BBY53 - VARACTOR DIODE |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA028N04NM3SXKSA1 | Infineon Technologies | Description: TRENCH <= 40V PG-TO220-3 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA028N04NM3SXKSA1 | Infineon Technologies | Description: TRENCH <= 40V PG-TO220-3 |
Produkt ist nicht verfügbar |
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TT250N18KOFHPSA1 | Infineon Technologies | Description: SCR MODULE 1.8KV 250A MODULE |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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TD250N12KOF | Infineon Technologies | Description: TD250N12 - THYRISTOR / DIODE MOD |
auf Bestellung 247 Stücke: Lieferzeit 10-14 Tag (e) |
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IDP15E65D1XKSA1 | Infineon Technologies |
Description: DIODE GEN PURP 650V 15A TO220-2 Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 114 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 2240 Stücke: Lieferzeit 10-14 Tag (e) |
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F165LMHAXP | Infineon Technologies |
Description: IC MCU 16BIT ROMLESS 100MQFP Packaging: Bulk Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: P-MQFP-100 Part Status: Obsolete Number of I/O: 77 |
auf Bestellung 38 Stücke: Lieferzeit 10-14 Tag (e) |
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XMC1302T028X0128ABXUMA1 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
FS50R17KE3B17BPSA1 |
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 345 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 345 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
Produkt ist nicht verfügbar
PEF55016EV1.3-G |
auf Bestellung 3960 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 34.24 EUR |
DF23MR12W1M1B11BOMA1 |
Hersteller: Infineon Technologies
Description: SIC 2N-CH 1200V AG-EASY1BM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: AG-EASY1BM-2
Description: SIC 2N-CH 1200V AG-EASY1BM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: AG-EASY1BM-2
Produkt ist nicht verfügbar
FF900R12IE4VPBOSA1 |
Hersteller: Infineon Technologies
Description: PP, IHM I, XHP 1,7KV
Packaging: Bulk
Part Status: Active
Description: PP, IHM I, XHP 1,7KV
Packaging: Bulk
Part Status: Active
auf Bestellung 117 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 941.04 EUR |
FF900R12ME7WB11BPSA1 |
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 890 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 890 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 551.36 EUR |
IR3565BMFS08TRP |
auf Bestellung 49378 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
82+ | 5.83 EUR |
CY7C1049G30-10VXI |
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 519 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 11.84 EUR |
19+ | 10.9 EUR |
38+ | 10.67 EUR |
57+ | 10.64 EUR |
114+ | 9.54 EUR |
266+ | 9.25 EUR |
513+ | 8.8 EUR |
IDDD10G65C6XTMA1 |
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 29A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 495pF @ 1V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 33 µA @ 420 V
Description: DIODE SIL CARB 650V 29A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 495pF @ 1V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 33 µA @ 420 V
Produkt ist nicht verfügbar
IDDD10G65C6XTMA1 |
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 29A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 495pF @ 1V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 33 µA @ 420 V
Description: DIODE SIL CARB 650V 29A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 495pF @ 1V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 33 µA @ 420 V
auf Bestellung 1538 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.3 EUR |
10+ | 5.29 EUR |
100+ | 4.28 EUR |
500+ | 3.81 EUR |
IDDD16G65C6XTMA1 |
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 43A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
Description: DIODE SIL CARB 650V 43A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
auf Bestellung 3400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1700+ | 5.14 EUR |
IDDD16G65C6XTMA1 |
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 43A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
Description: DIODE SIL CARB 650V 43A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
auf Bestellung 4735 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.94 EUR |
10+ | 8.34 EUR |
100+ | 6.75 EUR |
500+ | 6 EUR |
PTF180101M V1 |
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS 10W TSSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.99GHz
Power - Output: 10W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: PG-RFP-10
Part Status: Discontinued at Digi-Key
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 180 mA
Description: IC FET RF LDMOS 10W TSSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.99GHz
Power - Output: 10W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: PG-RFP-10
Part Status: Discontinued at Digi-Key
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 180 mA
Produkt ist nicht verfügbar
PTF210101M V1 |
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS 10W TSSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 2.17GHz
Power - Output: 10W
Gain: 15dB
Technology: LDMOS
Supplier Device Package: PG-RFP-10
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 180 mA
Description: IC FET RF LDMOS 10W TSSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 2.17GHz
Power - Output: 10W
Gain: 15dB
Technology: LDMOS
Supplier Device Package: PG-RFP-10
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 180 mA
Produkt ist nicht verfügbar
BSB280N15NZ3G |
Hersteller: Infineon Technologies
Description: BSB280N15 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: MG-WDSON-2-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
Description: BSB280N15 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: MG-WDSON-2-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
Produkt ist nicht verfügbar
PXB4330EV2.1 |
Hersteller: Infineon Technologies
Description: AOP ATM OAM PROCESSOR
Description: AOP ATM OAM PROCESSOR
auf Bestellung 246 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 335.75 EUR |
PXB4330EV1.1 |
Hersteller: Infineon Technologies
Description: AOP ATM OAM PROCESSOR
Description: AOP ATM OAM PROCESSOR
Produkt ist nicht verfügbar
BTS56033LBBXUMA1 |
Hersteller: Infineon Technologies
Description: BTS56033-LBB - SPOC+ SPI POWER C
Description: BTS56033-LBB - SPOC+ SPI POWER C
Produkt ist nicht verfügbar
TD215N22KOFTIMHPSA1 |
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK BG-PB50AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 215 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 410 A
Voltage - Off State: 2.2 kV
Description: THYR / DIODE MODULE DK BG-PB50AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 215 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 410 A
Voltage - Off State: 2.2 kV
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 313.67 EUR |
DD390N22STIMHPSA1 |
Hersteller: Infineon Technologies
Description: DIODE MOD GP 2200V BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 390A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 800 A
Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
Description: DIODE MOD GP 2200V BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 390A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 800 A
Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 147.65 EUR |
BSM200GB120DLCE3256HOSA1 |
Hersteller: Infineon Technologies
Description: BSM200GB120DLC - IGBT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Description: BSM200GB120DLC - IGBT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Produkt ist nicht verfügbar
BA892-02V |
Hersteller: Infineon Technologies
Description: SILICON RF SWITCHING DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2-1
Part Status: Active
Current - Max: 100 mA
Description: SILICON RF SWITCHING DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2-1
Part Status: Active
Current - Max: 100 mA
Produkt ist nicht verfügbar
IRL40S212ARMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
800+ | 1.75 EUR |
1600+ | 1.62 EUR |
SLE 66R35 MCC2 |
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
Produkt ist nicht verfügbar
SP4001511XTMA1 |
Hersteller: Infineon Technologies
Description: SENSOR 203.05PSIA DSOSP14
Packaging: Tape & Reel (TR)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: RF
Mounting Type: Surface Mount
Operating Pressure: 14.5PSI ~ 203.05PSI (100kPa ~ 1400kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Board Mount
Supplier Device Package: PG-DSOSP-14-82
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SENSOR 203.05PSIA DSOSP14
Packaging: Tape & Reel (TR)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: RF
Mounting Type: Surface Mount
Operating Pressure: 14.5PSI ~ 203.05PSI (100kPa ~ 1400kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Board Mount
Supplier Device Package: PG-DSOSP-14-82
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
SP4001511XTMA1 |
Hersteller: Infineon Technologies
Description: SENSOR 203.05PSIA DSOSP14
Packaging: Cut Tape (CT)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: RF
Mounting Type: Surface Mount
Operating Pressure: 14.5PSI ~ 203.05PSI (100kPa ~ 1400kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Board Mount
Supplier Device Package: PG-DSOSP-14-82
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SENSOR 203.05PSIA DSOSP14
Packaging: Cut Tape (CT)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: RF
Mounting Type: Surface Mount
Operating Pressure: 14.5PSI ~ 203.05PSI (100kPa ~ 1400kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Board Mount
Supplier Device Package: PG-DSOSP-14-82
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1143 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 15 EUR |
10+ | 13.55 EUR |
25+ | 12.92 EUR |
100+ | 11.22 EUR |
250+ | 10.71 EUR |
500+ | 9.77 EUR |
SAF-XE164FN-24F80L AA |
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Produkt ist nicht verfügbar
IPB120N06S403ATMA2 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
FF23MR12W1M1C11BPSA1 |
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1BM-2
Packaging: Tray
Part Status: Obsolete
Description: LOW POWER EASY AG-EASY1BM-2
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
BGA824N6E6329XTSA1 |
Hersteller: Infineon Technologies
Description: IC AMP GALI 1.164-1.615GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.615GHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 19.5dB
Current - Supply: 3.9mA
Noise Figure: 0.7dB
P1dB: -9dBm
Test Frequency: 1.164GHz ~ 1.3GHz
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
Description: IC AMP GALI 1.164-1.615GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.615GHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 19.5dB
Current - Supply: 3.9mA
Noise Figure: 0.7dB
P1dB: -9dBm
Test Frequency: 1.164GHz ~ 1.3GHz
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12000+ | 0.5 EUR |
24000+ | 0.48 EUR |
EVALISO1H815GTOBO1 |
Hersteller: Infineon Technologies
Description: EVAL ISO1H815G
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: ISO1H815G
Supplied Contents: Board(s)
Primary Attributes: 8-Channel (Octal)
Embedded: No
Part Status: Active
Description: EVAL ISO1H815G
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: ISO1H815G
Supplied Contents: Board(s)
Primary Attributes: 8-Channel (Octal)
Embedded: No
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 101.64 EUR |
T3801N36TOFVTXPSA1 |
Hersteller: Infineon Technologies
Description: SCR MODULE 3600V 6020A DO200AE
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 91000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 5370 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 6020 A
Voltage - Off State: 3.6 kV
Description: SCR MODULE 3600V 6020A DO200AE
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 91000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 5370 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 6020 A
Voltage - Off State: 3.6 kV
Produkt ist nicht verfügbar
IFX54211MBV33HTSA1 |
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 150MA SCT595
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 63dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 200 µA
Description: IC REG LINEAR 3.3V 150MA SCT595
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 63dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 200 µA
auf Bestellung 170749 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1199+ | 0.4 EUR |
ISP98DP10LMXTSA1 |
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 1.55A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 900mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 165µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 50 V
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 1.55A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 900mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 165µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 50 V
Produkt ist nicht verfügbar
ISP98DP10LMXTSA1 |
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 1.55A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 900mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 165µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 50 V
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 1.55A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 900mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 165µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 50 V
auf Bestellung 405 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 0.99 EUR |
27+ | 0.68 EUR |
30+ | 0.6 EUR |
100+ | 0.51 EUR |
250+ | 0.47 EUR |
IPN65R1K5CE |
Hersteller: Infineon Technologies
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Produkt ist nicht verfügbar
IPN65R1K5CEATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 5.2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Description: MOSFET N-CH 650V 5.2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Produkt ist nicht verfügbar
MA15037577NDSA1 |
Hersteller: Infineon Technologies
Description: POWER MODULE IGBT
Description: POWER MODULE IGBT
Produkt ist nicht verfügbar
IPW65R310CFD |
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 10341 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
219+ | 2.22 EUR |
IPW65R155CFD7XKSA1 |
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.53 EUR |
10+ | 4.99 EUR |
100+ | 3.55 EUR |
IPW65R125CFD7XKSA1 |
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.4 EUR |
10+ | 5.6 EUR |
100+ | 4.01 EUR |
IPW65R090CFD7XKSA1 |
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
auf Bestellung 179 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.33 EUR |
10+ | 6.96 EUR |
100+ | 5.05 EUR |
IPW65R018CFD7XKSA1 |
Hersteller: Infineon Technologies
Description: 650 V COOLMOS CFD7 SUPERJUNCTION
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
Description: 650 V COOLMOS CFD7 SUPERJUNCTION
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
auf Bestellung 228 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 30.75 EUR |
10+ | 22 EUR |
100+ | 17.76 EUR |
IPW65R110CFD7XKSA1 |
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.55 EUR |
10+ | 4.39 EUR |
100+ | 3.58 EUR |
IPW65R050CFD7AXKSA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 45A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 45A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 224 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 11.84 EUR |
10+ | 8.17 EUR |
100+ | 7.83 EUR |
IPW65R029CFD7XKSA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 69A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Description: MOSFET N-CH 650V 69A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 14.73 EUR |
30+ | 10.62 EUR |
IPW65R15OCFDAFKSA1 |
Hersteller: Infineon Technologies
Description: N-CHANNEL AUTOMOTIVE MOSFET
Packaging: Bulk
Part Status: Active
Description: N-CHANNEL AUTOMOTIVE MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
IPW65F6048A |
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
TLV493DA2BWXTMA1 |
Hersteller: Infineon Technologies
Description: XENSIV 3D MAGNETIC HALL SENSOR S
Packaging: Tape & Reel (TR)
Features: Programmable
Package / Case: 5-UFBGA, WLCSP
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -20°C ~ 85°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT
Current - Supply (Max): 130nA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Part Status: Active
Description: XENSIV 3D MAGNETIC HALL SENSOR S
Packaging: Tape & Reel (TR)
Features: Programmable
Package / Case: 5-UFBGA, WLCSP
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -20°C ~ 85°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT
Current - Supply (Max): 130nA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Part Status: Active
Produkt ist nicht verfügbar
TLV493DA2BWXTMA1 |
Hersteller: Infineon Technologies
Description: XENSIV 3D MAGNETIC HALL SENSOR S
Packaging: Cut Tape (CT)
Features: Programmable
Package / Case: 5-UFBGA, WLCSP
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -20°C ~ 85°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT
Current - Supply (Max): 130nA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Part Status: Active
Description: XENSIV 3D MAGNETIC HALL SENSOR S
Packaging: Cut Tape (CT)
Features: Programmable
Package / Case: 5-UFBGA, WLCSP
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -20°C ~ 85°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±160mT
Current - Supply (Max): 130nA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Part Status: Active
auf Bestellung 1832 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.76 EUR |
12+ | 1.48 EUR |
13+ | 1.37 EUR |
25+ | 1.25 EUR |
50+ | 1.16 EUR |
100+ | 1.08 EUR |
500+ | 0.91 EUR |
CYTVIIBE1MSKTOBO1 |
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR CYT2B75CADES
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4F
Board Type: Evaluation Platform
Utilized IC / Part: CYT2B75CADES, TJA1057GTJ
Platform: Arduino
Part Status: Discontinued at Digi-Key
Description: EVAL BOARD FOR CYT2B75CADES
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4F
Board Type: Evaluation Platform
Utilized IC / Part: CYT2B75CADES, TJA1057GTJ
Platform: Arduino
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
CY241V08SXC-41 |
Hersteller: Infineon Technologies
Description: IC CLOCK GEN MPEG W/VCXO 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency - Max: 27MHz
Type: Clock Generator
Supplier Device Package: 8-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC CLOCK GEN MPEG W/VCXO 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency - Max: 27MHz
Type: Clock Generator
Supplier Device Package: 8-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5267 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
214+ | 2.46 EUR |
IPA60R120P7E8191XKSA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V TO220FP-3
Packaging: Tube
Part Status: Active
Description: MOSFET N-CH 600V TO220FP-3
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
BBY5305WH6327XTSA1554 |
Hersteller: Infineon Technologies
Description: BBY53 - VARACTOR DIODE
Description: BBY53 - VARACTOR DIODE
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.21 EUR |
IPA028N04NM3SXKSA1 |
Hersteller: Infineon Technologies
Description: TRENCH <= 40V PG-TO220-3
Description: TRENCH <= 40V PG-TO220-3
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
282+ | 1.74 EUR |
IPA028N04NM3SXKSA1 |
Hersteller: Infineon Technologies
Description: TRENCH <= 40V PG-TO220-3
Description: TRENCH <= 40V PG-TO220-3
Produkt ist nicht verfügbar
TT250N18KOFHPSA1 |
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 250A MODULE
Description: SCR MODULE 1.8KV 250A MODULE
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 391.49 EUR |
TD250N12KOF |
Hersteller: Infineon Technologies
Description: TD250N12 - THYRISTOR / DIODE MOD
Description: TD250N12 - THYRISTOR / DIODE MOD
auf Bestellung 247 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 251.29 EUR |
IDP15E65D1XKSA1 |
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 650V 15A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 114 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE GEN PURP 650V 15A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 114 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 2240 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
432+ | 1.14 EUR |
F165LMHAXP |
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 100MQFP
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-100
Part Status: Obsolete
Number of I/O: 77
Description: IC MCU 16BIT ROMLESS 100MQFP
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-100
Part Status: Obsolete
Number of I/O: 77
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 23.94 EUR |