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F3L15R12W2H3B27BOMA1 F3L15R12W2H3B27BOMA1 Infineon Technologies Infineon-F3L15R12W2H3_B27-DS-v02_00-en_de.pdf?fileId=db3a304340e762c80140e8b1561601c8 Description: IGBT MOD 1200V 20A 145W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 875 pF @ 25 V
auf Bestellung 114 Stücke:
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Mindestbestellmenge: 6
ISC0702NLSATMA1 ISC0702NLSATMA1 Infineon Technologies Infineon-ISC0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd752aa46df2 Description: MOSFET N-CH 60V 23A/135A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Produkt ist nicht verfügbar
ISC0702NLSATMA1 ISC0702NLSATMA1 Infineon Technologies Infineon-ISC0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd752aa46df2 Description: MOSFET N-CH 60V 23A/135A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 1245 Stücke:
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500+ 1.22 EUR
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ISZ0703NLSATMA1 ISZ0703NLSATMA1 Infineon Technologies Infineon-ISZ0703NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd7e72316e18 Description: MOSFET N-CH 60V 13A/56A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TSDSON-8-25
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
auf Bestellung 10000 Stücke:
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ISZ0703NLSATMA1 ISZ0703NLSATMA1 Infineon Technologies Infineon-ISZ0703NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd7e72316e18 Description: MOSFET N-CH 60V 13A/56A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TSDSON-8-25
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
auf Bestellung 18142 Stücke:
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500+ 0.94 EUR
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Mindestbestellmenge: 11
ISC0703NLSATMA1 ISC0703NLSATMA1 Infineon Technologies Infineon-ISC0703NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd753b066df6 Description: MOSFET N-CH 60V 13A/57A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 32A, 10V
Power Dissipation (Max): 3W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
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TLE4476DATMA1 TLE4476DATMA1 Infineon Technologies Infineon-TLE4476D-DS-v02_50-EN.pdf?fileId=5546d46258fc0bc1015969d22e8e41b9 Description: IC REG LINEAR 3.3V/5V TO252-5-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA, 430mA
Operating Temperature: -40°C ~ 170°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Enable
Part Status: Active
PSRR: 60dB (20Hz ~ 20kHz), 60dB (20Hz ~ 20kHz)
Voltage Dropout (Max): -, 0.7V @ 330mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 13 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 8869 Stücke:
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25+ 3.04 EUR
100+ 2.68 EUR
250+ 2.51 EUR
500+ 2.41 EUR
1000+ 2.32 EUR
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IPB47N10SL-26 IPB47N10SL-26 Infineon Technologies INFNS09768-1.pdf?t.download=true&u=5oefqw Description: IPB47N10 - 75V-100V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 33A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
BSD314SPE L6327 BSD314SPE L6327 Infineon Technologies INFNS19486-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 6.3µA
Supplier Device Package: PG-SOT363-6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
Produkt ist nicht verfügbar
BSD214SNH6327 BSD214SNH6327 Infineon Technologies INFNS22452-1.pdf?t.download=true&u=5oefqw Description: BSD314 - 250V-600V SMALL SIGNAL/
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Supplier Device Package: PG-SOT363-6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
Produkt ist nicht verfügbar
BSD314SPEL6327 BSD314SPEL6327 Infineon Technologies INFNS19486-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 6.3µA
Supplier Device Package: PG-SOT363-6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
Produkt ist nicht verfügbar
BSB019N03LX G BSB019N03LX G Infineon Technologies BSB019N03LX_G.pdf Description: MOSFET N-CH 30V 32A/174A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 15 V
Produkt ist nicht verfügbar
BSF053N03LT G BSF053N03LT G Infineon Technologies BSF053N03LT_G.pdf Description: MOSFET N-CH 30V 16A/71A 2WDSON
Produkt ist nicht verfügbar
BFN39H6327XTSA1 BFN39H6327XTSA1 Infineon Technologies bfn39.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449c441c4023a Description: TRANS PNP 300V 0.2A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
auf Bestellung 42000 Stücke:
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BSZ300N15NS5ATMA1 BSZ300N15NS5ATMA1 Infineon Technologies Infineon-BSZ300N15NS5-DS-v02_01-EN.pdf?fileId=5546d462617643590161992b1642177e Description: MOSFET N-CH 150V 32A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 16A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 32µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 75 V
auf Bestellung 10000 Stücke:
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5000+1.31 EUR
Mindestbestellmenge: 5000
BSZ300N15NS5ATMA1 BSZ300N15NS5ATMA1 Infineon Technologies Infineon-BSZ300N15NS5-DS-v02_01-EN.pdf?fileId=5546d462617643590161992b1642177e Description: MOSFET N-CH 150V 32A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 16A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 32µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 75 V
auf Bestellung 11879 Stücke:
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5+4.29 EUR
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500+ 1.55 EUR
1000+ 1.43 EUR
2000+ 1.33 EUR
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TUA 6020 TUA 6020 Infineon Technologies TUA%206020.pdf Description: IC VIDEO TUNER 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Tuner
Voltage - Supply: 4.5V ~ 5.5V
Applications: Consumer Video
Standards: PAL
Supplier Device Package: PG-TSSOP-28-1
Control Interface: I2C
Produkt ist nicht verfügbar
IFX4949SJXUMA1 IFX4949SJXUMA1 Infineon Technologies Infineon-IFX4949-DS-v01_00-en.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a3043372d5cc801376eb6b31e3e14&ack=t Description: IC REG LINEAR 5V 100MA DSO8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 28V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 3.6 mA
auf Bestellung 9994 Stücke:
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940+0.52 EUR
Mindestbestellmenge: 940
TC237LP32F200SACKXUMA1 TC237LP32F200SACKXUMA1 Infineon Technologies Infineon-TC23xAC_DS-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee Description: IC MCU 32BIT 2MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CYW4354KKWBGT Infineon Technologies download Description: IC RF TXRX+MCU BLUTOOTH 395XFBGA
Packaging: Tape & Reel (TR)
Package / Case: 395-XFBGA, WLCSP
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 19.5dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Supplier Device Package: 395-WLCSP (4.87x7.67)
GPIO: 11
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
1EBN1002AEXUMA1 Infineon Technologies Description: ISOLATED_HVGD PG-DSO-14
Produkt ist nicht verfügbar
TC1782N320F180HRBAKXUMA2 TC1782N320F180HRBAKXUMA2 Infineon Technologies Infineon-TC1782-DS-v01_04_01-en.pdf?fileId=db3a3043271faefd01274d48e12d5d56 Description: IC MCU 32BIT 2.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 36x10b/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 3.63V
Connectivity: ASC, CANbus, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-20
Part Status: Active
Number of I/O: 86
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
BSS123IXTMA1 BSS123IXTMA1 Infineon Technologies Infineon-BSS123I-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a421ae8a1d46 Description: 100V N-CH SMALL SIGNAL MOSFET IN
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V
Produkt ist nicht verfügbar
XMC1201T038F0200AAXUMA1 XMC1201T038F0200AAXUMA1 Infineon Technologies XMC1200.pdf Description: IC MCU 32BIT 200KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Part Status: Obsolete
Number of I/O: 26
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
BSM200GA170DLCHOSA1 Infineon Technologies Description: IGBT MOD 1700V 400A 1920W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1920 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 15 nF @ 25 V
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BSM200GA170DLCHOSA1 Infineon Technologies Description: IGBT MOD 1700V 400A 1920W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1920 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 15 nF @ 25 V
Produkt ist nicht verfügbar
IPAN60R600P7SXKSA1 IPAN60R600P7SXKSA1 Infineon Technologies Infineon-IPAN60R600P7S-DS-v02_00-EN.pdf?fileId=5546d462696dbf120169b486f5464aaa Description: MOSFET N-CH 650V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
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94-3660PBF 94-3660PBF Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 100V 4.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Produkt ist nicht verfügbar
IR3629MTRPBF IR3629MTRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC REG CTRLR DDR 1OUT 12MLPD
Packaging: Cut Tape (CT)
Package / Case: 12-VFDFN Exposed Pad
Voltage - Output: Adj to 0.6V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.5V ~ 14V
Operating Temperature: -40°C ~ 125°C
Applications: Controller, DDR
Supplier Device Package: 12-MLPD (3x4)
auf Bestellung 5973 Stücke:
Lieferzeit 10-14 Tag (e)
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100+ 1.38 EUR
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MB95F654LNPFT-G-SNE2 MB95F654LNPFT-G-SNE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 20KB FLASH 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
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Lieferzeit 10-14 Tag (e)
15+1.21 EUR
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MB95F654LNPFT-G-SNE2 MB95F654LNPFT-G-SNE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 20KB FLASH 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MB95F652LNPFT-G-SNE2 MB95F652LNPFT-G-SNE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 8KB FLASH 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
auf Bestellung 9588 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.23 EUR
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MB95F652LNPFT-G-SNE2 MB95F652LNPFT-G-SNE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 8KB FLASH 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
FS03MR12A6MA1BBPSA1 FS03MR12A6MA1BBPSA1 Infineon Technologies Infineon-FS03MR12A6MA1B-DataSheet-v01_00-EN.pdf?fileId=5546d4627862c3e501787e48f6ef330c Description: SIC 6N-CH 1200V AG-HYBRIDD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 240mA
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
auf Bestellung 3 Stücke:
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1+3627.96 EUR
BBY53-03WE6327HTSA1 BBY53-03WE6327HTSA1 Infineon Technologies INFNS15715-1.pdf?t.download=true&u=5oefqw Description: DIODE TUNING 6V 20MA SOD-323
auf Bestellung 61312 Stücke:
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2275+0.21 EUR
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BAT54-03WE6327 BAT54-03WE6327 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTT 30V 200MA SOD323-2
Produkt ist nicht verfügbar
BBY58-03WE6327 BBY58-03WE6327 Infineon Technologies INFNS11658-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz
Capacitance Ratio Condition: C4/C6
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 1.3
Produkt ist nicht verfügbar
BBY53-03WE6327 BBY53-03WE6327 Infineon Technologies INFNS15715-1.pdf?t.download=true&u=5oefqw Description: BBY53 - VARACTOR DIODE
auf Bestellung 2450 Stücke:
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2450+0.21 EUR
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IM67D130AXTSA2 IM67D130AXTSA2 Infineon Technologies Infineon-IM67D130A-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017ac41305f054bf Description: MIC MEMS DIGITAL PDM NC -36DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 67dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Grade: Automotive
Part Status: Active
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 20 kHz ~ 20 kHz
Qualification: AEC-Q103
auf Bestellung 2000 Stücke:
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1000+2.1 EUR
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IM67D130AXTSA2 IM67D130AXTSA2 Infineon Technologies Infineon-IM67D130A-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017ac41305f054bf Description: MIC MEMS DIGITAL PDM NC -36DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 67dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Grade: Automotive
Part Status: Active
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 20 kHz ~ 20 kHz
Qualification: AEC-Q103
auf Bestellung 2321 Stücke:
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5+3.73 EUR
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50+ 2.68 EUR
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250+ 2.34 EUR
500+ 2.15 EUR
Mindestbestellmenge: 5
MB95F856KPFT-G-SNE2 MB95F856KPFT-G-SNE2 Infineon Technologies download Description: IC MCU 8BIT 36KB FLASH 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 36KB (36K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 4x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 21
DigiKey Programmable: Not Verified
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30+0.6 EUR
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BAS21UE6433HTMA1 BAS21UE6433HTMA1 Infineon Technologies bas21series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141bed353f040f Description: DIODE ARRAY GP 200V 250MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
auf Bestellung 10630 Stücke:
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3718+0.13 EUR
Mindestbestellmenge: 3718
CY7C109B-15ZXC CY7C109B-15ZXC Infineon Technologies CY7C109B,%20CY7C1009B.pdf Description: IC SRAM 1MBIT PARALLEL 32TSOP I
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REFSHA35WRC2SYSTOBO1 REFSHA35WRC2SYSTOBO1 Infineon Technologies Infineon-UG_REF-SHA35WRC2SYS-UserManual-v03_01-EN.pdf?fileId=8ac78c8c7e7124d1017efc91bc2a06f0 Description: REFERENCE DESIGN BOARD
Packaging: Bulk
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 1 Stücke:
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1+145.75 EUR
BSS139IXTMA1 BSS139IXTMA1 Infineon Technologies Infineon-BSS139I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421f99f1d4f Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
FP150R12N3T7BPSA1 FP150R12N3T7BPSA1 Infineon Technologies Infineon-FP150R12N3T7-DataSheet-v00_10-EN.pdf?fileId=5546d4627aa5d4f5017b0ae316147137 Description: LOW POWER ECONO AG-ECONO3-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
auf Bestellung 10 Stücke:
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1+522.84 EUR
10+ 489.7 EUR
IFF450B12ME4PB11BPSA1 IFF450B12ME4PB11BPSA1 Infineon Technologies Infineon-IFF450B12ME4P_B11-DS-v03_01-EN.pdf?fileId=5546d462602a9dc801602ab243df000f Description: IGBT MOD 1200V 450A 40W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 40 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Produkt ist nicht verfügbar
FZ2400R12HE4B9HDSA2 Infineon Technologies Infineon-FZ2400R12HE4_B9-DS-v02_04-EN.pdf?fileId=db3a30433e4143bd013e46d8f64f417d Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
1+1538.96 EUR
CY8CTMA884LTI-13T CY8CTMA884LTI-13T Infineon Technologies Marking_Format_RevJB_Jul2017.pdf Description: IC TRUETOUCH CAPSENSE QFN
Packaging: Tape & Reel (TR)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 88-QFN (10x10)
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+7.42 EUR
Mindestbestellmenge: 2000
CY8CTMA884AA-23 CY8CTMA884AA-23 Infineon Technologies Description: IC TRUETOUCH CAPSENSE 100TQFP
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
auf Bestellung 2056 Stücke:
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24+22.67 EUR
Mindestbestellmenge: 24
IPA60R380P6 Infineon Technologies INFNS28174-1.pdf?t.download=true&u=5oefqw Description: 600V COOLMOS POWER TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
auf Bestellung 313 Stücke:
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313+1.85 EUR
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CY8C24423A-24PXI CY8C24423A-24PXI Infineon Technologies Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f Description: IC MCU 8BIT 4KB FLASH 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-PDIP
Number of I/O: 24
DigiKey Programmable: Not Verified
auf Bestellung 94213 Stücke:
Lieferzeit 10-14 Tag (e)
97+4.93 EUR
Mindestbestellmenge: 97
IAUA170N10S5N031AUMA1 IAUA170N10S5N031AUMA1 Infineon Technologies Infineon-IAUA170N10S5N031-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39952b0b32 Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V
Produkt ist nicht verfügbar
IPT019N08N5ATMA1 IPT019N08N5ATMA1 Infineon Technologies Infineon-IPT019N08N5-DataSheet-v02_00-EN.pdf?fileId=5546d46269e1c019016ac0292ba732e4 Description: MOSFET N-CH 80V 32A/247A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 247A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 150A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
auf Bestellung 3880 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.9 EUR
10+ 5.79 EUR
100+ 4.68 EUR
500+ 4.16 EUR
1000+ 3.57 EUR
Mindestbestellmenge: 3
6ED2230S12TXUMA1 6ED2230S12TXUMA1 Infineon Technologies Infineon-6ED2230S12T-DataSheet-v01_02-EN.pdf?fileId=5546d4626cb27db2016d053ae13a11ad Description: IC GATE DRVR HI/LOW SIDE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width), 24 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-24
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: 3-Phase
Driven Configuration: High-Side or Low-Side
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
6ED2230S12TXUMA1 6ED2230S12TXUMA1 Infineon Technologies Infineon-6ED2230S12T-DataSheet-v01_02-EN.pdf?fileId=5546d4626cb27db2016d053ae13a11ad Description: IC GATE DRVR HI/LOW SIDE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width), 24 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-24
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: 3-Phase
Driven Configuration: High-Side or Low-Side
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1577 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.56 EUR
10+ 11.71 EUR
25+ 10.75 EUR
100+ 9.69 EUR
250+ 9.19 EUR
500+ 8.88 EUR
Mindestbestellmenge: 2
IM323L6G2XKMA1 IM323L6G2XKMA1 Infineon Technologies Infineon-IM323-L6G_IM323-L6G2-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7f2a768a017f548423c34ff2 Description: CIPOS TINY 600V 15A THREE-PHASE
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.043", 26.50mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 600 V
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.39 EUR
15+ 11.39 EUR
30+ 10.91 EUR
105+ 10.39 EUR
Mindestbestellmenge: 2
IPD220N06L3GATMA1 IPD220N06L3GATMA1 Infineon Technologies Infineon-IPD220N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e266fb35e471a Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 24251 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.5 EUR
18+ 1.01 EUR
100+ 0.7 EUR
500+ 0.55 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 12
MBC410700BPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Produkt ist nicht verfügbar
C164C18EMCBKXQMA1 C164C18EMCBKXQMA1 Infineon Technologies INFNS03050-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT 64KB OTP 80MQFP
Produkt ist nicht verfügbar
F3L15R12W2H3B27BOMA1 Infineon-F3L15R12W2H3_B27-DS-v02_00-en_de.pdf?fileId=db3a304340e762c80140e8b1561601c8
F3L15R12W2H3B27BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 20A 145W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 875 pF @ 25 V
auf Bestellung 114 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+87.18 EUR
Mindestbestellmenge: 6
ISC0702NLSATMA1 Infineon-ISC0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd752aa46df2
ISC0702NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 23A/135A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Produkt ist nicht verfügbar
ISC0702NLSATMA1 Infineon-ISC0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd752aa46df2
ISC0702NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 23A/135A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 1245 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.43 EUR
10+ 2.02 EUR
100+ 1.54 EUR
500+ 1.22 EUR
1000+ 1.12 EUR
Mindestbestellmenge: 8
ISZ0703NLSATMA1 Infineon-ISZ0703NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd7e72316e18
ISZ0703NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 13A/56A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TSDSON-8-25
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.68 EUR
10000+ 0.65 EUR
Mindestbestellmenge: 5000
ISZ0703NLSATMA1 Infineon-ISZ0703NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd7e72316e18
ISZ0703NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 13A/56A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TSDSON-8-25
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
auf Bestellung 18142 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.72 EUR
13+ 1.42 EUR
100+ 1.1 EUR
500+ 0.94 EUR
1000+ 0.76 EUR
2000+ 0.72 EUR
Mindestbestellmenge: 11
ISC0703NLSATMA1 Infineon-ISC0703NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd753b066df6
ISC0703NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 13A/57A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 32A, 10V
Power Dissipation (Max): 3W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.61 EUR
10000+ 0.59 EUR
Mindestbestellmenge: 5000
TLE4476DATMA1 Infineon-TLE4476D-DS-v02_50-EN.pdf?fileId=5546d46258fc0bc1015969d22e8e41b9
TLE4476DATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V/5V TO252-5-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA, 430mA
Operating Temperature: -40°C ~ 170°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Enable
Part Status: Active
PSRR: 60dB (20Hz ~ 20kHz), 60dB (20Hz ~ 20kHz)
Voltage Dropout (Max): -, 0.7V @ 330mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 13 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 8869 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.66 EUR
10+ 3.36 EUR
25+ 3.04 EUR
100+ 2.68 EUR
250+ 2.51 EUR
500+ 2.41 EUR
1000+ 2.32 EUR
Mindestbestellmenge: 4
IPB47N10SL-26 INFNS09768-1.pdf?t.download=true&u=5oefqw
IPB47N10SL-26
Hersteller: Infineon Technologies
Description: IPB47N10 - 75V-100V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 33A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
BSD314SPE L6327 INFNS19486-1.pdf?t.download=true&u=5oefqw
BSD314SPE L6327
Hersteller: Infineon Technologies
Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 6.3µA
Supplier Device Package: PG-SOT363-6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
Produkt ist nicht verfügbar
BSD214SNH6327 INFNS22452-1.pdf?t.download=true&u=5oefqw
BSD214SNH6327
Hersteller: Infineon Technologies
Description: BSD314 - 250V-600V SMALL SIGNAL/
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Supplier Device Package: PG-SOT363-6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
Produkt ist nicht verfügbar
BSD314SPEL6327 INFNS19486-1.pdf?t.download=true&u=5oefqw
BSD314SPEL6327
Hersteller: Infineon Technologies
Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 6.3µA
Supplier Device Package: PG-SOT363-6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
Produkt ist nicht verfügbar
BSB019N03LX G BSB019N03LX_G.pdf
BSB019N03LX G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 32A/174A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 15 V
Produkt ist nicht verfügbar
BSF053N03LT G BSF053N03LT_G.pdf
BSF053N03LT G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 16A/71A 2WDSON
Produkt ist nicht verfügbar
BFN39H6327XTSA1 bfn39.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449c441c4023a
BFN39H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 300V 0.2A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
BSZ300N15NS5ATMA1 Infineon-BSZ300N15NS5-DS-v02_01-EN.pdf?fileId=5546d462617643590161992b1642177e
BSZ300N15NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 32A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 16A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 32µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 75 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.31 EUR
Mindestbestellmenge: 5000
BSZ300N15NS5ATMA1 Infineon-BSZ300N15NS5-DS-v02_01-EN.pdf?fileId=5546d462617643590161992b1642177e
BSZ300N15NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 32A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 16A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 32µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 75 V
auf Bestellung 11879 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.29 EUR
10+ 2.79 EUR
100+ 1.92 EUR
500+ 1.55 EUR
1000+ 1.43 EUR
2000+ 1.33 EUR
Mindestbestellmenge: 5
TUA 6020 TUA%206020.pdf
TUA 6020
Hersteller: Infineon Technologies
Description: IC VIDEO TUNER 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Tuner
Voltage - Supply: 4.5V ~ 5.5V
Applications: Consumer Video
Standards: PAL
Supplier Device Package: PG-TSSOP-28-1
Control Interface: I2C
Produkt ist nicht verfügbar
IFX4949SJXUMA1 Infineon-IFX4949-DS-v01_00-en.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a3043372d5cc801376eb6b31e3e14&ack=t
IFX4949SJXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA DSO8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 28V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 3.6 mA
auf Bestellung 9994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
940+0.52 EUR
Mindestbestellmenge: 940
TC237LP32F200SACKXUMA1 Infineon-TC23xAC_DS-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee
TC237LP32F200SACKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CYW4354KKWBGT download
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 395XFBGA
Packaging: Tape & Reel (TR)
Package / Case: 395-XFBGA, WLCSP
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 19.5dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Supplier Device Package: 395-WLCSP (4.87x7.67)
GPIO: 11
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
1EBN1002AEXUMA1
Hersteller: Infineon Technologies
Description: ISOLATED_HVGD PG-DSO-14
Produkt ist nicht verfügbar
TC1782N320F180HRBAKXUMA2 Infineon-TC1782-DS-v01_04_01-en.pdf?fileId=db3a3043271faefd01274d48e12d5d56
TC1782N320F180HRBAKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 36x10b/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 3.63V
Connectivity: ASC, CANbus, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-20
Part Status: Active
Number of I/O: 86
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
BSS123IXTMA1 Infineon-BSS123I-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a421ae8a1d46
BSS123IXTMA1
Hersteller: Infineon Technologies
Description: 100V N-CH SMALL SIGNAL MOSFET IN
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V
Produkt ist nicht verfügbar
XMC1201T038F0200AAXUMA1 XMC1200.pdf
XMC1201T038F0200AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Part Status: Obsolete
Number of I/O: 26
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
BSM200GA170DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 400A 1920W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1920 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 15 nF @ 25 V
auf Bestellung 63 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+265.21 EUR
Mindestbestellmenge: 2
BSM200GA170DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 400A 1920W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1920 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 15 nF @ 25 V
Produkt ist nicht verfügbar
IPAN60R600P7SXKSA1 Infineon-IPAN60R600P7S-DS-v02_00-EN.pdf?fileId=5546d462696dbf120169b486f5464aaa
IPAN60R600P7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.6 EUR
14+ 1.32 EUR
100+ 1.03 EUR
Mindestbestellmenge: 11
94-3660PBF fundamentals-of-power-semiconductors
94-3660PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 4.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Produkt ist nicht verfügbar
IR3629MTRPBF fundamentals-of-power-semiconductors
IR3629MTRPBF
Hersteller: Infineon Technologies
Description: IC REG CTRLR DDR 1OUT 12MLPD
Packaging: Cut Tape (CT)
Package / Case: 12-VFDFN Exposed Pad
Voltage - Output: Adj to 0.6V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.5V ~ 14V
Operating Temperature: -40°C ~ 125°C
Applications: Controller, DDR
Supplier Device Package: 12-MLPD (3x4)
auf Bestellung 5973 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.92 EUR
11+ 1.62 EUR
25+ 1.52 EUR
100+ 1.38 EUR
Mindestbestellmenge: 10
MB95F654LNPFT-G-SNE2 Prod_Selector_Guide_11-25-15.pdf
MB95F654LNPFT-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
auf Bestellung 6464 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.21 EUR
Mindestbestellmenge: 15
MB95F654LNPFT-G-SNE2 Prod_Selector_Guide_11-25-15.pdf
MB95F654LNPFT-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MB95F652LNPFT-G-SNE2 Prod_Selector_Guide_11-25-15.pdf
MB95F652LNPFT-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
auf Bestellung 9588 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.23 EUR
Mindestbestellmenge: 15
MB95F652LNPFT-G-SNE2 Prod_Selector_Guide_11-25-15.pdf
MB95F652LNPFT-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
FS03MR12A6MA1BBPSA1 Infineon-FS03MR12A6MA1B-DataSheet-v01_00-EN.pdf?fileId=5546d4627862c3e501787e48f6ef330c
FS03MR12A6MA1BBPSA1
Hersteller: Infineon Technologies
Description: SIC 6N-CH 1200V AG-HYBRIDD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 240mA
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3627.96 EUR
BBY53-03WE6327HTSA1 INFNS15715-1.pdf?t.download=true&u=5oefqw
BBY53-03WE6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE TUNING 6V 20MA SOD-323
auf Bestellung 61312 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2275+0.21 EUR
Mindestbestellmenge: 2275
BAT54-03WE6327 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT54-03WE6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 30V 200MA SOD323-2
Produkt ist nicht verfügbar
BBY58-03WE6327 INFNS11658-1.pdf?t.download=true&u=5oefqw
BBY58-03WE6327
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz
Capacitance Ratio Condition: C4/C6
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 1.3
Produkt ist nicht verfügbar
BBY53-03WE6327 INFNS15715-1.pdf?t.download=true&u=5oefqw
BBY53-03WE6327
Hersteller: Infineon Technologies
Description: BBY53 - VARACTOR DIODE
auf Bestellung 2450 Stücke:
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Anzahl Preis ohne MwSt
2450+0.21 EUR
Mindestbestellmenge: 2450
IM67D130AXTSA2 Infineon-IM67D130A-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017ac41305f054bf
IM67D130AXTSA2
Hersteller: Infineon Technologies
Description: MIC MEMS DIGITAL PDM NC -36DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 67dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Grade: Automotive
Part Status: Active
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 20 kHz ~ 20 kHz
Qualification: AEC-Q103
auf Bestellung 2000 Stücke:
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Anzahl Preis ohne MwSt
1000+2.1 EUR
Mindestbestellmenge: 1000
IM67D130AXTSA2 Infineon-IM67D130A-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017ac41305f054bf
IM67D130AXTSA2
Hersteller: Infineon Technologies
Description: MIC MEMS DIGITAL PDM NC -36DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 67dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Grade: Automotive
Part Status: Active
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 20 kHz ~ 20 kHz
Qualification: AEC-Q103
auf Bestellung 2321 Stücke:
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Anzahl Preis ohne MwSt
5+3.73 EUR
10+ 3.09 EUR
25+ 2.85 EUR
50+ 2.68 EUR
100+ 2.51 EUR
250+ 2.34 EUR
500+ 2.15 EUR
Mindestbestellmenge: 5
MB95F856KPFT-G-SNE2 download
MB95F856KPFT-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 36KB FLASH 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 36KB (36K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 4x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 21
DigiKey Programmable: Not Verified
auf Bestellung 3071 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
Mindestbestellmenge: 30
BAS21UE6433HTMA1 bas21series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141bed353f040f
BAS21UE6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 200V 250MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
auf Bestellung 10630 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3718+0.13 EUR
Mindestbestellmenge: 3718
CY7C109B-15ZXC CY7C109B,%20CY7C1009B.pdf
CY7C109B-15ZXC
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
auf Bestellung 1623 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
283+1.76 EUR
Mindestbestellmenge: 283
REFSHA35WRC2SYSTOBO1 Infineon-UG_REF-SHA35WRC2SYS-UserManual-v03_01-EN.pdf?fileId=8ac78c8c7e7124d1017efc91bc2a06f0
REFSHA35WRC2SYSTOBO1
Hersteller: Infineon Technologies
Description: REFERENCE DESIGN BOARD
Packaging: Bulk
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+145.75 EUR
BSS139IXTMA1 Infineon-BSS139I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421f99f1d4f
BSS139IXTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
FP150R12N3T7BPSA1 Infineon-FP150R12N3T7-DataSheet-v00_10-EN.pdf?fileId=5546d4627aa5d4f5017b0ae316147137
FP150R12N3T7BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+522.84 EUR
10+ 489.7 EUR
IFF450B12ME4PB11BPSA1 Infineon-IFF450B12ME4P_B11-DS-v03_01-EN.pdf?fileId=5546d462602a9dc801602ab243df000f
IFF450B12ME4PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 450A 40W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 40 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Produkt ist nicht verfügbar
FZ2400R12HE4B9HDSA2 Infineon-FZ2400R12HE4_B9-DS-v02_04-EN.pdf?fileId=db3a30433e4143bd013e46d8f64f417d
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+1538.96 EUR
CY8CTMA884LTI-13T Marking_Format_RevJB_Jul2017.pdf
CY8CTMA884LTI-13T
Hersteller: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE QFN
Packaging: Tape & Reel (TR)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 88-QFN (10x10)
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+7.42 EUR
Mindestbestellmenge: 2000
CY8CTMA884AA-23
CY8CTMA884AA-23
Hersteller: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE 100TQFP
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
auf Bestellung 2056 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+22.67 EUR
Mindestbestellmenge: 24
IPA60R380P6 INFNS28174-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: 600V COOLMOS POWER TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
auf Bestellung 313 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
313+1.85 EUR
Mindestbestellmenge: 313
CY8C24423A-24PXI Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f
CY8C24423A-24PXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-PDIP
Number of I/O: 24
DigiKey Programmable: Not Verified
auf Bestellung 94213 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
97+4.93 EUR
Mindestbestellmenge: 97
IAUA170N10S5N031AUMA1 Infineon-IAUA170N10S5N031-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39952b0b32
IAUA170N10S5N031AUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V
Produkt ist nicht verfügbar
IPT019N08N5ATMA1 Infineon-IPT019N08N5-DataSheet-v02_00-EN.pdf?fileId=5546d46269e1c019016ac0292ba732e4
IPT019N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 32A/247A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 247A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 150A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
auf Bestellung 3880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.9 EUR
10+ 5.79 EUR
100+ 4.68 EUR
500+ 4.16 EUR
1000+ 3.57 EUR
Mindestbestellmenge: 3
6ED2230S12TXUMA1 Infineon-6ED2230S12T-DataSheet-v01_02-EN.pdf?fileId=5546d4626cb27db2016d053ae13a11ad
6ED2230S12TXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width), 24 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-24
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: 3-Phase
Driven Configuration: High-Side or Low-Side
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
6ED2230S12TXUMA1 Infineon-6ED2230S12T-DataSheet-v01_02-EN.pdf?fileId=5546d4626cb27db2016d053ae13a11ad
6ED2230S12TXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width), 24 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-24
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: 3-Phase
Driven Configuration: High-Side or Low-Side
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1577 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+15.56 EUR
10+ 11.71 EUR
25+ 10.75 EUR
100+ 9.69 EUR
250+ 9.19 EUR
500+ 8.88 EUR
Mindestbestellmenge: 2
IM323L6G2XKMA1 Infineon-IM323-L6G_IM323-L6G2-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7f2a768a017f548423c34ff2
IM323L6G2XKMA1
Hersteller: Infineon Technologies
Description: CIPOS TINY 600V 15A THREE-PHASE
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.043", 26.50mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 600 V
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.39 EUR
15+ 11.39 EUR
30+ 10.91 EUR
105+ 10.39 EUR
Mindestbestellmenge: 2
IPD220N06L3GATMA1 Infineon-IPD220N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e266fb35e471a
IPD220N06L3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 24251 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.5 EUR
18+ 1.01 EUR
100+ 0.7 EUR
500+ 0.55 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 12
MBC410700BPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Produkt ist nicht verfügbar
C164C18EMCBKXQMA1 INFNS03050-1.pdf?t.download=true&u=5oefqw
C164C18EMCBKXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB OTP 80MQFP
Produkt ist nicht verfügbar
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