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IPB120N06S403ATMA2 Infineon Technologies

Name: IPB120N06S403ATMA2
Brand: Infineon Technologies
SKU: 148984-4
Price: 2.18 EUR
Availability: InStock

Infineon_I120N06S4_03_DS_v01_00_en-1226652.pdf

Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 120A D2PAK-2

auf Bestellung 516 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis ohne MwSt
1+	4.56 EUR
10+	3.82 EUR
25+	3.52 EUR
100+	3.1 EUR
250+	3.03 EUR
500+	2.75 EUR
1000+	2.18 EUR

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Technische Details IPB120N06S403ATMA2 Infineon Technologies

Description: MOSFET N-CH 60V 120A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 4V @ 120µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote IPB120N06S403ATMA2

Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit
IPB120N06S403ATMA2	Hersteller : INFINEON	Description: INFINEON - IPB120N06S403ATMA2 - Leistungs-MOSFET, n-Kanal, 60 V, 120 A, 0.0023 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 167W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS-T2 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0023ohm SVHC: No SVHC (23-Jan-2024)	auf Bestellung 976 Stücke: Lieferzeit 14-21 Tag (e)
IPB120N06S403ATMA2	Hersteller : Infineon Technologies	Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK T/R	Produkt ist nicht verfügbar
IPB120N06S403ATMA2	Hersteller : Infineon Technologies	Description: MOSFET N-CH 60V 120A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V Qualification: AEC-Q101	Produkt ist nicht verfügbar
IPB120N06S403ATMA2	Hersteller : Infineon Technologies	Description: MOSFET N-CH 60V 120A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V Grade: Automotive Qualification: AEC-Q101	Produkt ist nicht verfügbar