Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75520) > Seite 339 nach 1259
Foto | Bezeichnung | Hersteller | Beschreibung |
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SBR5E45P5-7 | Diodes Incorporated | Description: DIODE RECT SBR 45V 5A POWERDI5 |
auf Bestellung 15004500 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR5E45P5-7D | Diodes Incorporated | Description: DIODE RECT SBR 45V 5A POWERDI5 |
auf Bestellung 15006000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR8E45P5-7 | Diodes Incorporated |
Description: DIODE SBR 45V 8A POWERDI5 Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A Current - Reverse Leakage @ Vr: 350 µA @ 45 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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D14V0S1U2WS-7 | Diodes Incorporated |
Description: TVS DIODE 14VWM 26VC SOD323 Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 360pF @ 1MHz Current - Peak Pulse (10/1000µs): 50A (8/20µs) Voltage - Reverse Standoff (Typ): 14V (Max) Supplier Device Package: SOD-323 Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.5V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 1300W (1.3kW) Power Line Protection: No |
auf Bestellung 56700 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC2450UV-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
auf Bestellung 974351 Stücke: Lieferzeit 10-14 Tag (e) |
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DML1005LDS-7 | Diodes Incorporated | Description: SWITCH DISCRETE |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN63D8L-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 350MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V |
auf Bestellung 420252 Stücke: Lieferzeit 10-14 Tag (e) |
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DMNH10H028SK3-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 55A TO252 |
auf Bestellung 2440 Stücke: Lieferzeit 10-14 Tag (e) |
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DMNH4006SK3-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 18A/90A TO252 |
Produkt ist nicht verfügbar |
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DMP10H4D2S-7 | Diodes Incorporated |
Description: MOSFET P-CH 100V 270MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V Power Dissipation (Max): 380mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V |
auf Bestellung 2499477 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP510DL-7 | Diodes Incorporated |
Description: MOSFET P-CH 50V 180MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V |
auf Bestellung 2516982 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V |
auf Bestellung 33004 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 7.3A PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V |
auf Bestellung 820 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 8.3A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V |
auf Bestellung 29210 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT6004LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 22A PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Power Dissipation (Max): 2.1W (Ta), 105W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V |
auf Bestellung 19377 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6010LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 14.8A TO252 |
auf Bestellung 2197 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6010LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 13.5A |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR5E45P5-13 | Diodes Incorporated | Description: DIODE RECT SBR 45V 5A POWERDI5 |
auf Bestellung 4294967295 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR5E45P5-7 | Diodes Incorporated | Description: DIODE RECT SBR 45V 5A POWERDI5 |
auf Bestellung 15004500 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR5E45P5-7D | Diodes Incorporated | Description: DIODE RECT SBR 45V 5A POWERDI5 |
auf Bestellung 15006000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR8E45P5-7 | Diodes Incorporated |
Description: DIODE SBR 45V 8A POWERDI5 Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A Current - Reverse Leakage @ Vr: 350 µA @ 45 V |
auf Bestellung 13400 Stücke: Lieferzeit 10-14 Tag (e) |
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DML1005LDS-7 | Diodes Incorporated | Description: SWITCH DISCRETE |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMNH10H028SK3-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 55A TO252 |
auf Bestellung 2440 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6010LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 13.5A |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR5E45P5-13 | Diodes Incorporated | Description: DIODE RECT SBR 45V 5A POWERDI5 |
auf Bestellung 4294967295 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR5E45P5-7 | Diodes Incorporated | Description: DIODE RECT SBR 45V 5A POWERDI5 |
auf Bestellung 15004500 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR5E45P5-7D | Diodes Incorporated | Description: DIODE RECT SBR 45V 5A POWERDI5 |
auf Bestellung 15006000 Stücke: Lieferzeit 10-14 Tag (e) |
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AL5801EV1 | Diodes Incorporated |
Description: EVAL BOARD FOR AL5801 Packaging: Box Voltage - Input: 3.5V ~ 20V Current - Output / Channel: 350mA Utilized IC / Part: AL5801 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated |
Produkt ist nicht verfügbar |
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AL5802EV1 | Diodes Incorporated |
Description: EVAL BOARD FOR AL5802 Packaging: Box Voltage - Input: 4.5V ~ 30V Current - Output / Channel: 120mA Utilized IC / Part: AL5802 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Active |
Produkt ist nicht verfügbar |
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AL8400EV1 | Diodes Incorporated |
Description: EVAL BOARD FOR AL8400 Packaging: Box Voltage - Input: 4V ~ 18V Current - Output / Channel: 150mA Utilized IC / Part: AL8400 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Active |
Produkt ist nicht verfügbar |
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AL8805EV1 | Diodes Incorporated |
Description: EVAL BOARD FOR AL8805 Features: Dimmable Packaging: Box Voltage - Input: 6V ~ 30V Current - Output / Channel: 680mA Utilized IC / Part: AL8805 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated |
Produkt ist nicht verfügbar |
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AL8805EV2 | Diodes Incorporated |
Description: EVAL BOARD FOR AL8805 Packaging: Box Voltage - Input: 12VAC, 12V ~ 20V Current - Output / Channel: 680mA Utilized IC / Part: AL8805 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated |
Produkt ist nicht verfügbar |
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AL8806EV1 | Diodes Incorporated |
Description: EVAL BOARD FOR AL8806 Features: Dimmable Packaging: Box Voltage - Input: 9V ~ 30V Current - Output / Channel: 1.5A Utilized IC / Part: AL8806 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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AL8806EV4 | Diodes Incorporated |
Description: EVAL BOARD FOR AL8806 Packaging: Box Features: Dimmable Voltage - Input: 9V ~ 30V Current - Output / Channel: 1.5A Utilized IC / Part: AL8806 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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AL8806EV6 | Diodes Incorporated |
Description: EVAL BOARD FOR AL8806 Packaging: Box Voltage - Input: 9V ~ 30V Current - Output / Channel: 1.1A Utilized IC / Part: AL8806 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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AL8807AEV1 | Diodes Incorporated |
Description: EVAL BOARD FOR AL8807A Features: Dimmable Packaging: Box Voltage - Input: 6V ~ 36V Current - Output / Channel: 680mA Utilized IC / Part: AL8807A Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated |
Produkt ist nicht verfügbar |
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AL8807AEV3 | Diodes Incorporated |
Description: EVAL BOARD FOR AL8807A Features: Dimmable Packaging: Box Voltage - Input: 6V ~ 36V Current - Output / Channel: 1A Utilized IC / Part: AL8807A Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated |
Produkt ist nicht verfügbar |
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AL8808EV1 | Diodes Incorporated | Description: BOARD LED DRIVER 680MA |
Produkt ist nicht verfügbar |
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AL8808EV2 | Diodes Incorporated |
Description: EVAL BOARD FOR AL8808 Packaging: Box Voltage - Input: 12VAC, 12V ~ 20V Current - Output / Channel: 680mA Utilized IC / Part: AL8808 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated |
Produkt ist nicht verfügbar |
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AL9910EV4 | Diodes Incorporated |
Description: EVAL BOARD FOR AL9910 Packaging: Box Voltage - Input: 85 ~ 277 VAC Current - Output / Channel: 180mA Utilized IC / Part: AL9910A Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated |
Produkt ist nicht verfügbar |
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AL9910EV5 | Diodes Incorporated |
Description: EVAL BOARD FOR AL9910 Packaging: Box Voltage - Input: 85 ~ 277 VAC Current - Output / Channel: 240mA Utilized IC / Part: AL9910A Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated |
Produkt ist nicht verfügbar |
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AL9910EV6 | Diodes Incorporated |
Description: EVAL BOARD FOR AL9910 Packaging: Box Voltage - Input: 90 ~ 132 VAC Current - Output / Channel: 75mA Utilized IC / Part: AL9910A Supplied Contents: Board(s) Outputs and Type: 4, Non-Isolated |
Produkt ist nicht verfügbar |
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SBRTF40U100CT | Diodes Incorporated |
Description: DIODE ARR SBR 100V 20A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
Produkt ist nicht verfügbar |
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SBRTF40U100CTFP | Diodes Incorporated |
Description: DIODE RECT SB 100V 20A ITO-220A Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
Produkt ist nicht verfügbar |
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AH3763Q-P-A | Diodes Incorporated | Description: MAGNETIC SWITCH LATCH 3SIP |
Produkt ist nicht verfügbar |
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AH3765Q-P-A | Diodes Incorporated | Description: IC HALL LATCH SWITCH SIP-3 |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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AH3766Q-P-A | Diodes Incorporated | Description: IC HALL LATCH SWITCH SIP-3 |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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AH3768Q-P-A | Diodes Incorporated | Description: IC HALL LATCH SWITCH SIP-3 |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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AH3769Q-P-A | Diodes Incorporated | Description: IC HALL LATCH SWITCH SIP-3 |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002H-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 170MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 25 V |
Produkt ist nicht verfügbar |
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AP3776MTR-G1 | Diodes Incorporated |
Description: IC OFFLINE SWITCH FLYBACK 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 6.1V ~ 28V Supplier Device Package: 8-SO Fault Protection: Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 13 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC3028LSDXQ-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 5.5A/5.8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 32500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG1016VQ-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 0.87A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2026UVT-13 | Diodes Incorporated |
Description: MOSFET N-CH 20V 6.2A TSOT-26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V Power Dissipation (Max): 1.15W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-23-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3023L-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 6.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 15 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN61D9U-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 380MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V |
Produkt ist nicht verfügbar |
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DMN61D9UW-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 0.34A SOT323 |
Produkt ist nicht verfügbar |
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DMP2100UFU-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V U-DFN2030-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.7A Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active |
Produkt ist nicht verfügbar |
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DMP6050SFG-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V 4.8A PWRDI3333-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH6050SK3Q-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V 7.2A/23.6A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR5E45P5-7 |
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15004500 Stücke:
Lieferzeit 10-14 Tag (e)SBR5E45P5-7D |
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15006000 Stücke:
Lieferzeit 10-14 Tag (e)SBR8E45P5-7 |
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Description: DIODE SBR 45V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.35 EUR |
3000+ | 0.31 EUR |
7500+ | 0.3 EUR |
10500+ | 0.28 EUR |
D14V0S1U2WS-7 |
Hersteller: Diodes Incorporated
Description: TVS DIODE 14VWM 26VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 360pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.5V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1300W (1.3kW)
Power Line Protection: No
Description: TVS DIODE 14VWM 26VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 360pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.5V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1300W (1.3kW)
Power Line Protection: No
auf Bestellung 56700 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.74 EUR |
34+ | 0.53 EUR |
100+ | 0.27 EUR |
500+ | 0.24 EUR |
1000+ | 0.18 EUR |
DMC2450UV-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET N/P-CH 20V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 974351 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.72 EUR |
35+ | 0.52 EUR |
100+ | 0.26 EUR |
500+ | 0.23 EUR |
1000+ | 0.18 EUR |
DML1005LDS-7 |
Hersteller: Diodes Incorporated
Description: SWITCH DISCRETE
Description: SWITCH DISCRETE
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)DMN63D8L-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 420252 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
48+ | 0.37 EUR |
69+ | 0.26 EUR |
139+ | 0.13 EUR |
500+ | 0.11 EUR |
1000+ | 0.073 EUR |
DMNH10H028SK3-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Description: MOSFET N-CH 100V 55A TO252
auf Bestellung 2440 Stücke:
Lieferzeit 10-14 Tag (e)DMNH4006SK3-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 18A/90A TO252
Description: MOSFET N-CH 40V 18A/90A TO252
Produkt ist nicht verfügbar
DMP10H4D2S-7 |
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
auf Bestellung 2499477 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
39+ | 0.46 EUR |
100+ | 0.23 EUR |
500+ | 0.2 EUR |
1000+ | 0.16 EUR |
DMP510DL-7 |
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
Description: MOSFET P-CH 50V 180MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
auf Bestellung 2516982 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 0.39 EUR |
66+ | 0.27 EUR |
130+ | 0.14 EUR |
500+ | 0.11 EUR |
1000+ | 0.082 EUR |
DMT10H015LFG-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 33004 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.67 EUR |
13+ | 1.37 EUR |
100+ | 1.06 EUR |
500+ | 0.9 EUR |
1000+ | 0.73 EUR |
DMT10H015LPS-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 7.3A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Description: MOSFET N-CH 100V 7.3A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 820 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.72 EUR |
13+ | 1.41 EUR |
100+ | 1.1 EUR |
500+ | 0.93 EUR |
DMT10H015LSS-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 29210 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.76 EUR |
13+ | 1.43 EUR |
100+ | 1.11 EUR |
500+ | 0.94 EUR |
1000+ | 0.77 EUR |
DMT6004LPS-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
auf Bestellung 19377 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.5 EUR |
10+ | 2.05 EUR |
100+ | 1.59 EUR |
500+ | 1.35 EUR |
1000+ | 1.1 EUR |
DMTH6010LK3-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14.8A TO252
Description: MOSFET N-CH 60V 14.8A TO252
auf Bestellung 2197 Stücke:
Lieferzeit 10-14 Tag (e)DMTH6010LPS-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A
Description: MOSFET N-CH 60V 13.5A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)SBR5E45P5-13 |
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 4294967295 Stücke:
Lieferzeit 10-14 Tag (e)SBR5E45P5-7 |
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15004500 Stücke:
Lieferzeit 10-14 Tag (e)SBR5E45P5-7D |
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15006000 Stücke:
Lieferzeit 10-14 Tag (e)SBR8E45P5-7 |
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 8A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Description: DIODE SBR 45V 8A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
auf Bestellung 13400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.95 EUR |
23+ | 0.8 EUR |
100+ | 0.55 EUR |
500+ | 0.43 EUR |
DML1005LDS-7 |
Hersteller: Diodes Incorporated
Description: SWITCH DISCRETE
Description: SWITCH DISCRETE
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)DMNH10H028SK3-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Description: MOSFET N-CH 100V 55A TO252
auf Bestellung 2440 Stücke:
Lieferzeit 10-14 Tag (e)DMTH6010LPS-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A
Description: MOSFET N-CH 60V 13.5A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)SBR5E45P5-13 |
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 4294967295 Stücke:
Lieferzeit 10-14 Tag (e)SBR5E45P5-7 |
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15004500 Stücke:
Lieferzeit 10-14 Tag (e)SBR5E45P5-7D |
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15006000 Stücke:
Lieferzeit 10-14 Tag (e)AL5801EV1 |
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL5801
Packaging: Box
Voltage - Input: 3.5V ~ 20V
Current - Output / Channel: 350mA
Utilized IC / Part: AL5801
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Description: EVAL BOARD FOR AL5801
Packaging: Box
Voltage - Input: 3.5V ~ 20V
Current - Output / Channel: 350mA
Utilized IC / Part: AL5801
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
AL5802EV1 |
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL5802
Packaging: Box
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 120mA
Utilized IC / Part: AL5802
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: EVAL BOARD FOR AL5802
Packaging: Box
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 120mA
Utilized IC / Part: AL5802
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
AL8400EV1 |
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8400
Packaging: Box
Voltage - Input: 4V ~ 18V
Current - Output / Channel: 150mA
Utilized IC / Part: AL8400
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: EVAL BOARD FOR AL8400
Packaging: Box
Voltage - Input: 4V ~ 18V
Current - Output / Channel: 150mA
Utilized IC / Part: AL8400
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
AL8805EV1 |
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8805
Features: Dimmable
Packaging: Box
Voltage - Input: 6V ~ 30V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8805
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Description: EVAL BOARD FOR AL8805
Features: Dimmable
Packaging: Box
Voltage - Input: 6V ~ 30V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8805
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
AL8805EV2 |
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8805
Packaging: Box
Voltage - Input: 12VAC, 12V ~ 20V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8805
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Description: EVAL BOARD FOR AL8805
Packaging: Box
Voltage - Input: 12VAC, 12V ~ 20V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8805
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
AL8806EV1 |
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8806
Features: Dimmable
Packaging: Box
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.5A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
Description: EVAL BOARD FOR AL8806
Features: Dimmable
Packaging: Box
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.5A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
Produkt ist nicht verfügbar
AL8806EV4 |
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8806
Packaging: Box
Features: Dimmable
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.5A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
Description: EVAL BOARD FOR AL8806
Packaging: Box
Features: Dimmable
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.5A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
Produkt ist nicht verfügbar
AL8806EV6 |
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8806
Packaging: Box
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.1A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
Description: EVAL BOARD FOR AL8806
Packaging: Box
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.1A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
Produkt ist nicht verfügbar
AL8807AEV1 |
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8807A
Features: Dimmable
Packaging: Box
Voltage - Input: 6V ~ 36V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8807A
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Description: EVAL BOARD FOR AL8807A
Features: Dimmable
Packaging: Box
Voltage - Input: 6V ~ 36V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8807A
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
AL8807AEV3 |
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8807A
Features: Dimmable
Packaging: Box
Voltage - Input: 6V ~ 36V
Current - Output / Channel: 1A
Utilized IC / Part: AL8807A
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Description: EVAL BOARD FOR AL8807A
Features: Dimmable
Packaging: Box
Voltage - Input: 6V ~ 36V
Current - Output / Channel: 1A
Utilized IC / Part: AL8807A
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
AL8808EV1 |
Hersteller: Diodes Incorporated
Description: BOARD LED DRIVER 680MA
Description: BOARD LED DRIVER 680MA
Produkt ist nicht verfügbar
AL8808EV2 |
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8808
Packaging: Box
Voltage - Input: 12VAC, 12V ~ 20V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8808
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Description: EVAL BOARD FOR AL8808
Packaging: Box
Voltage - Input: 12VAC, 12V ~ 20V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8808
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
AL9910EV4 |
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL9910
Packaging: Box
Voltage - Input: 85 ~ 277 VAC
Current - Output / Channel: 180mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Description: EVAL BOARD FOR AL9910
Packaging: Box
Voltage - Input: 85 ~ 277 VAC
Current - Output / Channel: 180mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
AL9910EV5 |
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL9910
Packaging: Box
Voltage - Input: 85 ~ 277 VAC
Current - Output / Channel: 240mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Description: EVAL BOARD FOR AL9910
Packaging: Box
Voltage - Input: 85 ~ 277 VAC
Current - Output / Channel: 240mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
AL9910EV6 |
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL9910
Packaging: Box
Voltage - Input: 90 ~ 132 VAC
Current - Output / Channel: 75mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 4, Non-Isolated
Description: EVAL BOARD FOR AL9910
Packaging: Box
Voltage - Input: 90 ~ 132 VAC
Current - Output / Channel: 75mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 4, Non-Isolated
Produkt ist nicht verfügbar
SBRTF40U100CT |
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: DIODE ARR SBR 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
SBRTF40U100CTFP |
Hersteller: Diodes Incorporated
Description: DIODE RECT SB 100V 20A ITO-220A
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: DIODE RECT SB 100V 20A ITO-220A
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
AH3763Q-P-A |
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH 3SIP
Description: MAGNETIC SWITCH LATCH 3SIP
Produkt ist nicht verfügbar
AH3765Q-P-A |
Hersteller: Diodes Incorporated
Description: IC HALL LATCH SWITCH SIP-3
Description: IC HALL LATCH SWITCH SIP-3
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)AH3766Q-P-A |
Hersteller: Diodes Incorporated
Description: IC HALL LATCH SWITCH SIP-3
Description: IC HALL LATCH SWITCH SIP-3
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)AH3768Q-P-A |
Hersteller: Diodes Incorporated
Description: IC HALL LATCH SWITCH SIP-3
Description: IC HALL LATCH SWITCH SIP-3
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)AH3769Q-P-A |
Hersteller: Diodes Incorporated
Description: IC HALL LATCH SWITCH SIP-3
Description: IC HALL LATCH SWITCH SIP-3
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)2N7002H-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 170MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 25 V
Description: MOSFET N-CH 60V 170MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 25 V
Produkt ist nicht verfügbar
AP3776MTR-G1 |
Hersteller: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.1V ~ 28V
Supplier Device Package: 8-SO
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 13 V
Description: IC OFFLINE SWITCH FLYBACK 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.1V ~ 28V
Supplier Device Package: 8-SO
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 13 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.59 EUR |
DMC3028LSDXQ-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 5.5A/5.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET N/P-CH 30V 5.5A/5.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 32500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.47 EUR |
5000+ | 0.44 EUR |
12500+ | 0.41 EUR |
DMG1016VQ-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.87A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 530mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET N/P-CH 20V 0.87A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 530mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.23 EUR |
30000+ | 0.22 EUR |
DMN2026UVT-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 6.2A TSOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V
Description: MOSFET N-CH 20V 6.2A TSOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.18 EUR |
DMN3023L-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 6.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 15 V
Description: MOSFET N-CH 30V 6.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.14 EUR |
DMN61D9U-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Description: MOSFET N-CH 60V 380MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Produkt ist nicht verfügbar
DMN61D9UW-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 0.34A SOT323
Description: MOSFET N-CH 60V 0.34A SOT323
Produkt ist nicht verfügbar
DMP2100UFU-13 |
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V U-DFN2030-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
Description: MOSFET 2P-CH 20V U-DFN2030-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
Produkt ist nicht verfügbar
DMP6050SFG-13 |
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 4.8A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
Description: MOSFET P-CH 60V 4.8A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.39 EUR |
6000+ | 0.37 EUR |
9000+ | 0.34 EUR |
DMPH6050SK3Q-13 |
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.57 EUR |
5000+ | 0.54 EUR |