Technische Details 2N7002H-13 Diodes Inc
Description: MOSFET N-CH 60V 170MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170mA (Ta), Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V, Power Dissipation (Max): 370mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 25 V.
Weitere Produktangebote 2N7002H-13
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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2N7002H-13 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 60V 0.17A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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2N7002H-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 170MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 25 V |
Produkt ist nicht verfügbar |
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2N7002H-13 | Hersteller : Diodes Incorporated | MOSFET 60V N-Ch Enh FET 7.5Ohm 5Vgs 210mA |
Produkt ist nicht verfügbar |