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AP131-28WG-7 AP131-28WG-7 Diodes Incorporated AP131.pdf Description: IC REG LDO 2.8V 0.3A SOT25
Produkt ist nicht verfügbar
AP131-33WG-7 AP131-33WG-7 Diodes Incorporated AP131.pdf Description: IC REG LDO 3.3V 0.3A SOT25
Produkt ist nicht verfügbar
AP139-35WG-7 AP139-35WG-7 Diodes Incorporated AP139.pdf Description: IC REG LDO 3.5V 0.3A SOT25
Produkt ist nicht verfügbar
DMG1012T-7 DMG1012T-7 Diodes Incorporated DMG1012T.pdf Description: MOSFET N-CH 20V 630MA SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V
auf Bestellung 345000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.084 EUR
6000+ 0.078 EUR
9000+ 0.065 EUR
30000+ 0.064 EUR
75000+ 0.057 EUR
150000+ 0.05 EUR
Mindestbestellmenge: 3000
DMG1013T-7 DMG1013T-7 Diodes Incorporated ds31784.pdf Description: MOSFET P-CH 20V 460MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V
Power Dissipation (Max): 270mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.622 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V
auf Bestellung 7641000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.082 EUR
6000+ 0.076 EUR
9000+ 0.063 EUR
30000+ 0.062 EUR
75000+ 0.056 EUR
150000+ 0.048 EUR
Mindestbestellmenge: 3000
DMP2035U-7 DMP2035U-7 Diodes Incorporated ds31830.pdf Description: MOSFET P-CH 20V 3.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 10 V
auf Bestellung 396000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
9000+ 0.13 EUR
75000+ 0.11 EUR
Mindestbestellmenge: 3000
DMG8601UFG-7 DMG8601UFG-7 Diodes Incorporated ds31788.pdf Description: MOSFET 2N-CH 20V 6.1A DFN
auf Bestellung 5342 Stücke:
Lieferzeit 10-14 Tag (e)
MMBD7000HC-7-F MMBD7000HC-7-F Diodes Incorporated MMBD7000HS_HC.pdf Description: DIODE ARRAY GP 100V 300MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
auf Bestellung 748160 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
80+ 0.22 EUR
148+ 0.12 EUR
500+ 0.094 EUR
1000+ 0.065 EUR
Mindestbestellmenge: 56
MMBD7000HS-7-F MMBD7000HS-7-F Diodes Incorporated MMBD7000HS_HC.pdf Description: DIODE ARRAY GP 100V 300MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
auf Bestellung 568050 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.21 EUR
113+ 0.16 EUR
211+ 0.084 EUR
500+ 0.066 EUR
1000+ 0.046 EUR
Mindestbestellmenge: 84
DMN2027LK3-13 DMN2027LK3-13 Diodes Incorporated DMN2027LK3-13.pdf Description: MOSFET N-CH 20V 11.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 857 pF @ 10 V
Produkt ist nicht verfügbar
DMN3020LK3-13 DMN3020LK3-13 Diodes Incorporated DMN3020LK3-13.pdf Description: MOSFET N-CH 30V 11.3A TO252-3
Produkt ist nicht verfügbar
DMN4015LK3-13 DMN4015LK3-13 Diodes Incorporated DMN4015LK3-13.pdf Description: MOSFET N-CH 40V 13.5A DPAK
Produkt ist nicht verfügbar
DMP3025LK3-13 DMP3025LK3-13 Diodes Incorporated DMP3025LK3.pdf Description: MOSFET P-CH 30V 10.6A DPAK
Produkt ist nicht verfügbar
DMN3024LK3-13 DMN3024LK3-13 Diodes Incorporated DMN3024LK3.pdf Description: MOSFET N-CH 30V 9.78A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.78A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Power Dissipation (Max): 2.17W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 15 V
auf Bestellung 75846 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.92 EUR
23+ 0.77 EUR
100+ 0.54 EUR
500+ 0.42 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 20
DMN4030LK3-13 DMN4030LK3-13 Diodes Incorporated DMN4030LK3.pdf Description: MOSFET N-CH 40V 9.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 604 pF @ 20 V
Produkt ist nicht verfügbar
DMN3020LK3-13 DMN3020LK3-13 Diodes Incorporated DMN3020LK3-13.pdf Description: MOSFET N-CH 30V 11.3A TO252-3
Produkt ist nicht verfügbar
DMG8601UFG-7 DMG8601UFG-7 Diodes Incorporated ds31788.pdf Description: MOSFET 2N-CH 20V 6.1A DFN
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
DMN4015LK3-13 DMN4015LK3-13 Diodes Incorporated DMN4015LK3-13.pdf Description: MOSFET N-CH 40V 13.5A DPAK
Produkt ist nicht verfügbar
DMN4009LK3-13 DMN4009LK3-13 Diodes Incorporated DMN4009LK3.pdf Description: MOSFET N-CH 40V 18A TO252-3
Produkt ist nicht verfügbar
DMN3024LK3-13 DMN3024LK3-13 Diodes Incorporated DMN3024LK3.pdf Description: MOSFET N-CH 30V 9.78A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.78A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Power Dissipation (Max): 2.17W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 15 V
auf Bestellung 72500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.31 EUR
5000+ 0.29 EUR
12500+ 0.27 EUR
25000+ 0.26 EUR
Mindestbestellmenge: 2500
DMN4009LK3-13 DMN4009LK3-13 Diodes Incorporated DMN4009LK3.pdf Description: MOSFET N-CH 40V 18A TO252-3
Produkt ist nicht verfügbar
DMN4030LK3-13 DMN4030LK3-13 Diodes Incorporated DMN4030LK3.pdf Description: MOSFET N-CH 40V 9.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 604 pF @ 20 V
Produkt ist nicht verfügbar
MMBD7000HC-7-F MMBD7000HC-7-F Diodes Incorporated MMBD7000HS_HC.pdf Description: DIODE ARRAY GP 100V 300MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
auf Bestellung 747000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.054 EUR
6000+ 0.051 EUR
9000+ 0.043 EUR
30000+ 0.04 EUR
75000+ 0.035 EUR
150000+ 0.029 EUR
Mindestbestellmenge: 3000
DMN4015LK3-13 DMN4015LK3-13 Diodes Incorporated DMN4015LK3-13.pdf Description: MOSFET N-CH 40V 13.5A DPAK
Produkt ist nicht verfügbar
MMBD7000HS-7-F MMBD7000HS-7-F Diodes Incorporated MMBD7000HS_HC.pdf Description: DIODE ARRAY GP 100V 300MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
auf Bestellung 564000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.038 EUR
6000+ 0.036 EUR
9000+ 0.03 EUR
30000+ 0.028 EUR
75000+ 0.027 EUR
Mindestbestellmenge: 3000
DMP3025LK3-13 DMP3025LK3-13 Diodes Incorporated DMP3025LK3.pdf Description: MOSFET P-CH 30V 10.6A DPAK
Produkt ist nicht verfügbar
AP7215-33YG-13 AP7215-33YG-13 Diodes Incorporated AP7215.pdf Description: IC REG LINEAR 3.3V 600MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.25V @ 100mA
Protection Features: Over Current
auf Bestellung 61998 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
35+ 0.51 EUR
38+ 0.47 EUR
100+ 0.38 EUR
250+ 0.35 EUR
500+ 0.3 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 30
AH5792-ZG-7 AH5792-ZG-7 Diodes Incorporated AH5792.pdf Description: IC MOTOR DRIVER ON/OFF SOT553
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AP7215-33YG-13 AP7215-33YG-13 Diodes Incorporated AP7215.pdf Description: IC REG LINEAR 3.3V 600MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.25V @ 100mA
Protection Features: Over Current
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.24 EUR
Mindestbestellmenge: 2500
SBR60A100CT SBR60A100CT Diodes Incorporated SBR60A100CT.pdf Description: DIODE ARR SBR 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
auf Bestellung 857 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.47 EUR
50+ 3.58 EUR
100+ 2.95 EUR
500+ 2.49 EUR
Mindestbestellmenge: 4
SBR2A40SA-13 SBR2A40SA-13 Diodes Incorporated SBR2A40SA.pdf Description: DIODE SBR 40V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 650 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
29+ 0.61 EUR
100+ 0.42 EUR
500+ 0.33 EUR
Mindestbestellmenge: 25
SBR02U30LP-7 SBR02U30LP-7 Diodes Incorporated Description: DIODE SBR 30V 200MA 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Super Barrier
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Produkt ist nicht verfügbar
SBR0240LP-7 SBR0240LP-7 Diodes Incorporated SBR0240LP.pdf Description: DIODE SBR 40V 250MA 2DFN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 250mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
auf Bestellung 1171700 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
57+ 0.31 EUR
100+ 0.19 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 44
SBR02U30LP-7 SBR02U30LP-7 Diodes Incorporated Description: DIODE SBR 30V 200MA 2DFN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Super Barrier
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Produkt ist nicht verfügbar
AH2984-PG-B AH2984-PG-B Diodes Incorporated AH2984.pdf Description: IC MOTOR DRIVER 2.5V-15V 4SIP
Packaging: Bulk
Package / Case: 4-SSIP
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side (2)
Voltage - Supply: 2.5V ~ 15V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 2.5V ~ 15V
Supplier Device Package: 4-SIP
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 181000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.07 EUR
19+ 0.94 EUR
25+ 0.88 EUR
100+ 0.72 EUR
250+ 0.67 EUR
500+ 0.57 EUR
1000+ 0.46 EUR
2500+ 0.41 EUR
5000+ 0.38 EUR
Mindestbestellmenge: 17
SBR1A40SA-13 SBR1A40SA-13 Diodes Incorporated SBR1A40SA.pdf Description: DIODE SBR 40V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
SBR20U40CT-G SBR20U40CT-G Diodes Incorporated SBR20U40.pdf Description: DIODE ARRAY SBR 40V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.9 EUR
10+ 2.61 EUR
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SBR1A40SA-13 SBR1A40SA-13 Diodes Incorporated SBR1A40SA.pdf Description: DIODE SBR 40V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
SBR40U60CTE SBR40U60CTE Diodes Incorporated SBR40U60CTE.pdf Description: DIODE ARR SBR 60V 20A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-262
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
50+3.2 EUR
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AH5771-PG-B AH5771-PG-B Diodes Incorporated AH5771.pdf Description: IC MOTOR DRIVER 2.5V-15V 4SIP
Produkt ist nicht verfügbar
AH5792-ZG-7 AH5792-ZG-7 Diodes Incorporated AH5792.pdf Description: IC MOTOR DRIVER ON/OFF SOT553
auf Bestellung 3000 Stücke:
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SBR0240LP-7 SBR0240LP-7 Diodes Incorporated SBR0240LP.pdf Description: DIODE SBR 40V 250MA 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 250mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
auf Bestellung 1167000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
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AH5792-ZG-7 AH5792-ZG-7 Diodes Incorporated AH5792.pdf Description: IC MOTOR DRIVER ON/OFF SOT553
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TL072SG-13 TL072SG-13 Diodes Incorporated Description: IC OPAMP JFET 2 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: J-FET
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1.4mA (x2 Channels)
Slew Rate: 13V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 65 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 8-SO
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 30 V
Produkt ist nicht verfügbar
DMN4036LK3-13 DMN4036LK3-13 Diodes Incorporated DMN4036LK3.pdf Description: MOSFET N-CH 40V 8.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 12A, 10V
Power Dissipation (Max): 2.12W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
auf Bestellung 41812 Stücke:
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19+0.97 EUR
22+ 0.84 EUR
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500+ 0.45 EUR
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DMN6068LK3-13 DMN6068LK3-13 Diodes Incorporated DMN6068LK3.pdf Description: MOSFET N-CH 60V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2.12W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
auf Bestellung 758260 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.88 EUR
24+ 0.76 EUR
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500+ 0.41 EUR
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ZXMP6A17KTC ZXMP6A17KTC Diodes Incorporated ZXMP6A17K.pdf Description: MOSFET P-CH 60V 4.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
auf Bestellung 22741 Stücke:
Lieferzeit 10-14 Tag (e)
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DMN6068LK3-13 DMN6068LK3-13 Diodes Incorporated DMN6068LK3.pdf Description: MOSFET N-CH 60V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2.12W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
auf Bestellung 757500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.3 EUR
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Mindestbestellmenge: 2500
TL082SG-13 TL082SG-13 Diodes Incorporated Description: IC OPAMP JFET 2 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: J-FET
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1.4mA (x2 Channels)
Slew Rate: 13V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 30 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 8-SO
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 30 V
Produkt ist nicht verfügbar
DMG9926USD-13 DMG9926USD-13 Diodes Incorporated ds31757.pdf Description: MOSFET 2N-CH 20V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 280474 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
39+ 0.46 EUR
100+ 0.32 EUR
500+ 0.25 EUR
1000+ 0.22 EUR
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DMN4036LK3-13 DMN4036LK3-13 Diodes Incorporated DMN4036LK3.pdf Description: MOSFET N-CH 40V 8.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 12A, 10V
Power Dissipation (Max): 2.12W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.33 EUR
5000+ 0.31 EUR
12500+ 0.29 EUR
25000+ 0.28 EUR
Mindestbestellmenge: 2500
DMC3028LSD-13 DMC3028LSD-13 Diodes Incorporated DMC3028LSD.pdf Description: MOSFET N/P-CH 30V 6.6A/6.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 472pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.3 EUR
5000+ 0.29 EUR
12500+ 0.27 EUR
Mindestbestellmenge: 2500
DMG9926USD-13 DMG9926USD-13 Diodes Incorporated ds31757.pdf Description: MOSFET 2N-CH 20V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 277500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.22 EUR
Mindestbestellmenge: 2500
DMP4051LK3-13 DMP4051LK3-13 Diodes Incorporated DMP4051LK3.pdf Description: MOSFET P-CH 40V 7.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 12A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
auf Bestellung 1804348 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.92 EUR
23+ 0.79 EUR
100+ 0.55 EUR
500+ 0.43 EUR
1000+ 0.35 EUR
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TL072SG-13 TL072SG-13 Diodes Incorporated Description: IC OPAMP JFET 2 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: J-FET
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1.4mA (x2 Channels)
Slew Rate: 13V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 65 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 8-SO
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 30 V
Produkt ist nicht verfügbar
DMC3028LSD-13 DMC3028LSD-13 Diodes Incorporated DMC3028LSD.pdf Description: MOSFET N/P-CH 30V 6.6A/6.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 472pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 15896 Stücke:
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20+0.92 EUR
23+ 0.77 EUR
100+ 0.54 EUR
500+ 0.42 EUR
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DMN3024LSD-13 DMN3024LSD-13 Diodes Incorporated DMN3024LSD.pdf Description: MOSFET 2N-CH 30V 6.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
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TL082SG-13 TL082SG-13 Diodes Incorporated Description: IC OPAMP JFET 2 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: J-FET
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1.4mA (x2 Channels)
Slew Rate: 13V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 30 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 8-SO
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 30 V
Produkt ist nicht verfügbar
DMN3024LSD-13 DMN3024LSD-13 Diodes Incorporated DMN3024LSD.pdf Description: MOSFET 2N-CH 30V 6.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 254865 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
20+ 0.89 EUR
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Mindestbestellmenge: 17
DMP4051LK3-13 DMP4051LK3-13 Diodes Incorporated DMP4051LK3.pdf Description: MOSFET P-CH 40V 7.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 12A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
auf Bestellung 1802500 Stücke:
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Mindestbestellmenge: 2500
AP131-28WG-7 AP131.pdf
AP131-28WG-7
Hersteller: Diodes Incorporated
Description: IC REG LDO 2.8V 0.3A SOT25
Produkt ist nicht verfügbar
AP131-33WG-7 AP131.pdf
AP131-33WG-7
Hersteller: Diodes Incorporated
Description: IC REG LDO 3.3V 0.3A SOT25
Produkt ist nicht verfügbar
AP139-35WG-7 AP139.pdf
AP139-35WG-7
Hersteller: Diodes Incorporated
Description: IC REG LDO 3.5V 0.3A SOT25
Produkt ist nicht verfügbar
DMG1012T-7 DMG1012T.pdf
DMG1012T-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 630MA SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V
auf Bestellung 345000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.084 EUR
6000+ 0.078 EUR
9000+ 0.065 EUR
30000+ 0.064 EUR
75000+ 0.057 EUR
150000+ 0.05 EUR
Mindestbestellmenge: 3000
DMG1013T-7 ds31784.pdf
DMG1013T-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 460MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V
Power Dissipation (Max): 270mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.622 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V
auf Bestellung 7641000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.082 EUR
6000+ 0.076 EUR
9000+ 0.063 EUR
30000+ 0.062 EUR
75000+ 0.056 EUR
150000+ 0.048 EUR
Mindestbestellmenge: 3000
DMP2035U-7 ds31830.pdf
DMP2035U-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 10 V
auf Bestellung 396000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.15 EUR
9000+ 0.13 EUR
75000+ 0.11 EUR
Mindestbestellmenge: 3000
DMG8601UFG-7 ds31788.pdf
DMG8601UFG-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.1A DFN
auf Bestellung 5342 Stücke:
Lieferzeit 10-14 Tag (e)
MMBD7000HC-7-F MMBD7000HS_HC.pdf
MMBD7000HC-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 100V 300MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
auf Bestellung 748160 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
80+ 0.22 EUR
148+ 0.12 EUR
500+ 0.094 EUR
1000+ 0.065 EUR
Mindestbestellmenge: 56
MMBD7000HS-7-F MMBD7000HS_HC.pdf
MMBD7000HS-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 100V 300MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
auf Bestellung 568050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
84+0.21 EUR
113+ 0.16 EUR
211+ 0.084 EUR
500+ 0.066 EUR
1000+ 0.046 EUR
Mindestbestellmenge: 84
DMN2027LK3-13 DMN2027LK3-13.pdf
DMN2027LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 11.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 857 pF @ 10 V
Produkt ist nicht verfügbar
DMN3020LK3-13 DMN3020LK3-13.pdf
DMN3020LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 11.3A TO252-3
Produkt ist nicht verfügbar
DMN4015LK3-13 DMN4015LK3-13.pdf
DMN4015LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 13.5A DPAK
Produkt ist nicht verfügbar
DMP3025LK3-13 DMP3025LK3.pdf
DMP3025LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 10.6A DPAK
Produkt ist nicht verfügbar
DMN3024LK3-13 DMN3024LK3.pdf
DMN3024LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 9.78A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.78A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Power Dissipation (Max): 2.17W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 15 V
auf Bestellung 75846 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.92 EUR
23+ 0.77 EUR
100+ 0.54 EUR
500+ 0.42 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 20
DMN4030LK3-13 DMN4030LK3.pdf
DMN4030LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 9.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 604 pF @ 20 V
Produkt ist nicht verfügbar
DMN3020LK3-13 DMN3020LK3-13.pdf
DMN3020LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 11.3A TO252-3
Produkt ist nicht verfügbar
DMG8601UFG-7 ds31788.pdf
DMG8601UFG-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.1A DFN
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
DMN4015LK3-13 DMN4015LK3-13.pdf
DMN4015LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 13.5A DPAK
Produkt ist nicht verfügbar
DMN4009LK3-13 DMN4009LK3.pdf
DMN4009LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 18A TO252-3
Produkt ist nicht verfügbar
DMN3024LK3-13 DMN3024LK3.pdf
DMN3024LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 9.78A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.78A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Power Dissipation (Max): 2.17W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 15 V
auf Bestellung 72500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.31 EUR
5000+ 0.29 EUR
12500+ 0.27 EUR
25000+ 0.26 EUR
Mindestbestellmenge: 2500
DMN4009LK3-13 DMN4009LK3.pdf
DMN4009LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 18A TO252-3
Produkt ist nicht verfügbar
DMN4030LK3-13 DMN4030LK3.pdf
DMN4030LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 9.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 604 pF @ 20 V
Produkt ist nicht verfügbar
MMBD7000HC-7-F MMBD7000HS_HC.pdf
MMBD7000HC-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 100V 300MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
auf Bestellung 747000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.054 EUR
6000+ 0.051 EUR
9000+ 0.043 EUR
30000+ 0.04 EUR
75000+ 0.035 EUR
150000+ 0.029 EUR
Mindestbestellmenge: 3000
DMN4015LK3-13 DMN4015LK3-13.pdf
DMN4015LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 13.5A DPAK
Produkt ist nicht verfügbar
MMBD7000HS-7-F MMBD7000HS_HC.pdf
MMBD7000HS-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 100V 300MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
auf Bestellung 564000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.038 EUR
6000+ 0.036 EUR
9000+ 0.03 EUR
30000+ 0.028 EUR
75000+ 0.027 EUR
Mindestbestellmenge: 3000
DMP3025LK3-13 DMP3025LK3.pdf
DMP3025LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 10.6A DPAK
Produkt ist nicht verfügbar
AP7215-33YG-13 AP7215.pdf
AP7215-33YG-13
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.3V 600MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.25V @ 100mA
Protection Features: Over Current
auf Bestellung 61998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
35+ 0.51 EUR
38+ 0.47 EUR
100+ 0.38 EUR
250+ 0.35 EUR
500+ 0.3 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 30
AH5792-ZG-7 AH5792.pdf
AH5792-ZG-7
Hersteller: Diodes Incorporated
Description: IC MOTOR DRIVER ON/OFF SOT553
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AP7215-33YG-13 AP7215.pdf
AP7215-33YG-13
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.3V 600MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.25V @ 100mA
Protection Features: Over Current
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.24 EUR
Mindestbestellmenge: 2500
SBR60A100CT SBR60A100CT.pdf
SBR60A100CT
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
auf Bestellung 857 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.47 EUR
50+ 3.58 EUR
100+ 2.95 EUR
500+ 2.49 EUR
Mindestbestellmenge: 4
SBR2A40SA-13 SBR2A40SA.pdf
SBR2A40SA-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
29+ 0.61 EUR
100+ 0.42 EUR
500+ 0.33 EUR
Mindestbestellmenge: 25
SBR02U30LP-7
SBR02U30LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 200MA 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Super Barrier
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Produkt ist nicht verfügbar
SBR0240LP-7 SBR0240LP.pdf
SBR0240LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 250MA 2DFN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 250mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
auf Bestellung 1171700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
44+0.4 EUR
57+ 0.31 EUR
100+ 0.19 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 44
SBR02U30LP-7
SBR02U30LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 200MA 2DFN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Super Barrier
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Produkt ist nicht verfügbar
AH2984-PG-B AH2984.pdf
AH2984-PG-B
Hersteller: Diodes Incorporated
Description: IC MOTOR DRIVER 2.5V-15V 4SIP
Packaging: Bulk
Package / Case: 4-SSIP
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side (2)
Voltage - Supply: 2.5V ~ 15V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 2.5V ~ 15V
Supplier Device Package: 4-SIP
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 181000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.07 EUR
19+ 0.94 EUR
25+ 0.88 EUR
100+ 0.72 EUR
250+ 0.67 EUR
500+ 0.57 EUR
1000+ 0.46 EUR
2500+ 0.41 EUR
5000+ 0.38 EUR
Mindestbestellmenge: 17
SBR1A40SA-13 SBR1A40SA.pdf
SBR1A40SA-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
SBR20U40CT-G SBR20U40.pdf
SBR20U40CT-G
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 40V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.9 EUR
10+ 2.61 EUR
Mindestbestellmenge: 7
SBR1A40SA-13 SBR1A40SA.pdf
SBR1A40SA-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
SBR40U60CTE SBR40U60CTE.pdf
SBR40U60CTE
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 60V 20A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-262
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
50+3.2 EUR
Mindestbestellmenge: 50
AH5771-PG-B AH5771.pdf
AH5771-PG-B
Hersteller: Diodes Incorporated
Description: IC MOTOR DRIVER 2.5V-15V 4SIP
Produkt ist nicht verfügbar
AH5792-ZG-7 AH5792.pdf
AH5792-ZG-7
Hersteller: Diodes Incorporated
Description: IC MOTOR DRIVER ON/OFF SOT553
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
SBR0240LP-7 SBR0240LP.pdf
SBR0240LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 250MA 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 250mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
auf Bestellung 1167000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.12 EUR
Mindestbestellmenge: 3000
AH5792-ZG-7 AH5792.pdf
AH5792-ZG-7
Hersteller: Diodes Incorporated
Description: IC MOTOR DRIVER ON/OFF SOT553
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
TL072SG-13
TL072SG-13
Hersteller: Diodes Incorporated
Description: IC OPAMP JFET 2 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: J-FET
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1.4mA (x2 Channels)
Slew Rate: 13V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 65 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 8-SO
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 30 V
Produkt ist nicht verfügbar
DMN4036LK3-13 DMN4036LK3.pdf
DMN4036LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 8.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 12A, 10V
Power Dissipation (Max): 2.12W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
auf Bestellung 41812 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.97 EUR
22+ 0.84 EUR
100+ 0.58 EUR
500+ 0.45 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 19
DMN6068LK3-13 DMN6068LK3.pdf
DMN6068LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2.12W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
auf Bestellung 758260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.88 EUR
24+ 0.76 EUR
100+ 0.53 EUR
500+ 0.41 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 20
ZXMP6A17KTC ZXMP6A17K.pdf
ZXMP6A17KTC
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 4.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
auf Bestellung 22741 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.39 EUR
15+ 1.21 EUR
100+ 0.84 EUR
500+ 0.7 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 13
DMN6068LK3-13 DMN6068LK3.pdf
DMN6068LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2.12W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
auf Bestellung 757500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.3 EUR
5000+ 0.28 EUR
12500+ 0.26 EUR
Mindestbestellmenge: 2500
TL082SG-13
TL082SG-13
Hersteller: Diodes Incorporated
Description: IC OPAMP JFET 2 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: J-FET
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1.4mA (x2 Channels)
Slew Rate: 13V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 30 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 8-SO
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 30 V
Produkt ist nicht verfügbar
DMG9926USD-13 ds31757.pdf
DMG9926USD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 280474 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
39+ 0.46 EUR
100+ 0.32 EUR
500+ 0.25 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 33
DMN4036LK3-13 DMN4036LK3.pdf
DMN4036LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 8.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 12A, 10V
Power Dissipation (Max): 2.12W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.33 EUR
5000+ 0.31 EUR
12500+ 0.29 EUR
25000+ 0.28 EUR
Mindestbestellmenge: 2500
DMC3028LSD-13 DMC3028LSD.pdf
DMC3028LSD-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.6A/6.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 472pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.3 EUR
5000+ 0.29 EUR
12500+ 0.27 EUR
Mindestbestellmenge: 2500
DMG9926USD-13 ds31757.pdf
DMG9926USD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 277500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.22 EUR
Mindestbestellmenge: 2500
DMP4051LK3-13 DMP4051LK3.pdf
DMP4051LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 7.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 12A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
auf Bestellung 1804348 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.92 EUR
23+ 0.79 EUR
100+ 0.55 EUR
500+ 0.43 EUR
1000+ 0.35 EUR
Mindestbestellmenge: 20
TL072SG-13
TL072SG-13
Hersteller: Diodes Incorporated
Description: IC OPAMP JFET 2 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: J-FET
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1.4mA (x2 Channels)
Slew Rate: 13V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 65 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 8-SO
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 30 V
Produkt ist nicht verfügbar
DMC3028LSD-13 DMC3028LSD.pdf
DMC3028LSD-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.6A/6.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 472pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 15896 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.92 EUR
23+ 0.77 EUR
100+ 0.54 EUR
500+ 0.42 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 20
DMN3024LSD-13 DMN3024LSD.pdf
DMN3024LSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 252500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.35 EUR
5000+ 0.33 EUR
12500+ 0.31 EUR
25000+ 0.3 EUR
Mindestbestellmenge: 2500
TL082SG-13
TL082SG-13
Hersteller: Diodes Incorporated
Description: IC OPAMP JFET 2 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: J-FET
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1.4mA (x2 Channels)
Slew Rate: 13V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 30 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 8-SO
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 30 V
Produkt ist nicht verfügbar
DMN3024LSD-13 DMN3024LSD.pdf
DMN3024LSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 254865 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.04 EUR
20+ 0.89 EUR
100+ 0.61 EUR
500+ 0.48 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 17
DMP4051LK3-13 DMP4051LK3.pdf
DMP4051LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 7.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 12A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
auf Bestellung 1802500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.31 EUR
5000+ 0.3 EUR
12500+ 0.27 EUR
Mindestbestellmenge: 2500
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