Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75522) > Seite 170 nach 1259
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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2DD1664R-13 | Diodes Incorporated | Description: TRANS NPN 32V 1A SOT89-3 |
auf Bestellung 2479 Stücke: Lieferzeit 10-14 Tag (e) |
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2DD2150R-13 | Diodes Incorporated | Description: TRANS NPN 20V 3A SOT89-3 |
Produkt ist nicht verfügbar |
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DCX53-13 | Diodes Incorporated | Description: TRANS PNP 80V 1A SOT89-3 |
Produkt ist nicht verfügbar |
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DCX53-16-13 | Diodes Incorporated | Description: TRANS PNP 80V 1A SOT89-3 |
Produkt ist nicht verfügbar |
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DCX69-13 | Diodes Incorporated | Description: TRANS PNP 20V 1A SOT89-3 |
auf Bestellung 1297715000 Stücke: Lieferzeit 10-14 Tag (e) |
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DCX69-16-13 | Diodes Incorporated | Description: TRANS PNP 20V 1A SOT89-3 |
auf Bestellung 11502 Stücke: Lieferzeit 10-14 Tag (e) |
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DLPD3V3LC-7 | Diodes Incorporated | Description: TVS DIODE 3.3VWM 22VC SOT26 |
Produkt ist nicht verfügbar |
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2DB1132Q-13 | Diodes Incorporated |
Description: TRANS PNP 32V 1A SOT89-3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 190MHz Supplier Device Package: SOT-89-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
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2DB1188P-13 | Diodes Incorporated | Description: TRANS PNP 32V 2A SOT89-3 |
Produkt ist nicht verfügbar |
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2DB1188Q-13 | Diodes Incorporated |
Description: TRANS PNP 32V 2A SOT89-3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Frequency - Transition: 120MHz Supplier Device Package: SOT-89-3 Grade: Automotive Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 1 W Qualification: AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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2DD1664P-13 | Diodes Incorporated | Description: TRANS NPN 32V 1A SOT89-3 |
auf Bestellung 17500 Stücke: Lieferzeit 10-14 Tag (e) |
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3.0SMCJ22A-13 | Diodes Incorporated |
Description: TVS DIODE 22VWM 35.5VC SMC Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Capacitance @ Frequency: 3000pF @ 1MHz Current - Peak Pulse (10/1000µs): 84.5A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Discontinued at Digi-Key |
auf Bestellung 117000 Stücke: Lieferzeit 10-14 Tag (e) |
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3.0SMCJ28A-13 | Diodes Incorporated |
Description: TVS DIODE 28VWM 45.4VC SMC Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Capacitance @ Frequency: 1800pF @ 1MHz Current - Peak Pulse (10/1000µs): 66.1A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 45.4V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Active |
auf Bestellung 216000 Stücke: Lieferzeit 10-14 Tag (e) |
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3.0SMCJ30A-13 | Diodes Incorporated |
Description: TVS DIODE 30VWM 48.4VC SMC Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Capacitance @ Frequency: 1700pF @ 1MHz Current - Peak Pulse (10/1000µs): 62A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Active |
auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
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3.0SMCJ58A-13 | Diodes Incorporated |
Description: TVS DIODE 58VWM 93.6VC SMC Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Capacitance @ Frequency: 1500pF @ 1MHz Current - Peak Pulse (10/1000µs): 32.1A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No |
auf Bestellung 108000 Stücke: Lieferzeit 10-14 Tag (e) |
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DLP03LC-7 | Diodes Incorporated | Description: TVS DIODE 3.3VWM 18VC SOT23-3 |
Produkt ist nicht verfügbar |
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DMN2100UDM-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 3.3A SOT-26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 6A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2170U-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 2.3A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 217 pF @ 10 V |
Produkt ist nicht verfügbar |
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DMN3033LSN-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 6A SC59-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3115UDM-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 3.2A SOT-26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 6A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 15 V |
Produkt ist nicht verfügbar |
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DXT3150-13 | Diodes Incorporated | Description: TRANS NPN 25V 5A SOT89-3 |
Produkt ist nicht verfügbar |
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S8KC-13 | Diodes Incorporated |
Description: DIODE GEN PURP 800V 8A SMC Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
auf Bestellung 99000 Stücke: Lieferzeit 10-14 Tag (e) |
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S8MC-13 | Diodes Incorporated |
Description: DIODE GEN PURP 1KV 8A SMC Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 3012000 Stücke: Lieferzeit 10-14 Tag (e) |
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2DB1188P-13 | Diodes Incorporated | Description: TRANS PNP 32V 2A SOT89-3 |
auf Bestellung 485 Stücke: Lieferzeit 10-14 Tag (e) |
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2DB1188Q-13 | Diodes Incorporated |
Description: TRANS PNP 32V 2A SOT89-3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Frequency - Transition: 120MHz Supplier Device Package: SOT-89-3 Grade: Automotive Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 1 W Qualification: AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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2DD1664P-13 | Diodes Incorporated | Description: TRANS NPN 32V 1A SOT89-3 |
Produkt ist nicht verfügbar |
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2DD1766P-13 | Diodes Incorporated | Description: TRANS NPN 32V 2A SOT89-3 |
auf Bestellung 17500 Stücke: Lieferzeit 10-14 Tag (e) |
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3.0SMCJ22A-13 | Diodes Incorporated |
Description: TVS DIODE 22VWM 35.5VC SMC Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Capacitance @ Frequency: 3000pF @ 1MHz Current - Peak Pulse (10/1000µs): 84.5A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Discontinued at Digi-Key |
auf Bestellung 117000 Stücke: Lieferzeit 10-14 Tag (e) |
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3.0SMCJ28A-13 | Diodes Incorporated |
Description: TVS DIODE 28VWM 45.4VC SMC Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Capacitance @ Frequency: 1800pF @ 1MHz Current - Peak Pulse (10/1000µs): 66.1A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 45.4V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Active |
auf Bestellung 216153 Stücke: Lieferzeit 10-14 Tag (e) |
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3.0SMCJ30A-13 | Diodes Incorporated |
Description: TVS DIODE 30VWM 48.4VC SMC Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Capacitance @ Frequency: 1700pF @ 1MHz Current - Peak Pulse (10/1000µs): 62A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Active |
auf Bestellung 45004 Stücke: Lieferzeit 10-14 Tag (e) |
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3.0SMCJ58A-13 | Diodes Incorporated |
Description: TVS DIODE 58VWM 93.6VC SMC Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Capacitance @ Frequency: 1500pF @ 1MHz Current - Peak Pulse (10/1000µs): 32.1A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No |
auf Bestellung 110230 Stücke: Lieferzeit 10-14 Tag (e) |
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DLP03LC-7 | Diodes Incorporated | Description: TVS DIODE 3.3VWM 18VC SOT23-3 |
Produkt ist nicht verfügbar |
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DMN2100UDM-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 3.3A SOT-26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 6A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V |
auf Bestellung 10790 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3033LSN-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 6A SC59-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V |
auf Bestellung 33117 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT3150-13 | Diodes Incorporated | Description: TRANS NPN 25V 5A SOT89-3 |
Produkt ist nicht verfügbar |
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S8KC-13 | Diodes Incorporated |
Description: DIODE GEN PURP 800V 8A SMC Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
auf Bestellung 105068 Stücke: Lieferzeit 10-14 Tag (e) |
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S8MC-13 | Diodes Incorporated |
Description: DIODE GEN PURP 1KV 8A SMC Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 3012361 Stücke: Lieferzeit 10-14 Tag (e) |
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2DD1664P-13 | Diodes Incorporated | Description: TRANS NPN 32V 1A SOT89-3 |
Produkt ist nicht verfügbar |
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DLP03LC-7 | Diodes Incorporated | Description: TVS DIODE 3.3VWM 18VC SOT23-3 |
Produkt ist nicht verfügbar |
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2DB1132P-13 | Diodes Incorporated |
Description: TRANS PNP 32V 1A SOT89-3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V Frequency - Transition: 190MHz Supplier Device Package: SOT-89-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
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2DB1386Q-13 | Diodes Incorporated |
Description: TRANS PNP 20V 5A SOT89-3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-89-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1 W Qualification: AEC-Q101 |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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2DD1766Q-13 | Diodes Incorporated | Description: TRANS NPN 32V 2A SOT89-3 |
Produkt ist nicht verfügbar |
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DCX51-13 | Diodes Incorporated | Description: TRANS PNP BIPO 45V SOT89-3 |
Produkt ist nicht verfügbar |
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DCX51-16-13 | Diodes Incorporated | Description: TRANS PNP BIPO 45V SOT89-3 |
Produkt ist nicht verfügbar |
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DCX52-13 | Diodes Incorporated | Description: TRANS PNP BIPO 60V SOT89-3 |
Produkt ist nicht verfügbar |
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DCX52-16-13 | Diodes Incorporated | Description: TRANS PNP 60V 1A SOT89-3 |
Produkt ist nicht verfügbar |
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DCX54-13 | Diodes Incorporated | Description: TRANS NPN 45V 1A SOT89-3 |
Produkt ist nicht verfügbar |
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DCX54-16-13 | Diodes Incorporated | Description: TRANS NPN 45V 1A SOT89-3 |
Produkt ist nicht verfügbar |
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DCX55-13 | Diodes Incorporated | Description: TRANS NPN BIPO 60V SOT89-3 |
Produkt ist nicht verfügbar |
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DCX55-16-13 | Diodes Incorporated | Description: TRANS NPN BIPO 60V SOT89-3 |
Produkt ist nicht verfügbar |
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DEMD48-7 | Diodes Incorporated | Description: TRANS PREBIAS NPN/PNP SOT563 |
Produkt ist nicht verfügbar |
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DMB2227A-7 | Diodes Incorporated |
Description: TRANS NPN/PNP 40V/60V 0.6A SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V, 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz, 200MHz Supplier Device Package: SOT-26 Part Status: Active |
auf Bestellung 198000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC2004LPK-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 0.75A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN1612-6 Part Status: Active |
auf Bestellung 120000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005K-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 300MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 2.7V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 100µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V |
auf Bestellung 951000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005LPK-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 440MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 450mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 100µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V |
auf Bestellung 1350000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2230U-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 10 V |
Produkt ist nicht verfügbar |
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DMN3200U-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 2.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V |
auf Bestellung 501000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3300U-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 193 pF @ 10 V |
auf Bestellung 564000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN5010VAK-7 | Diodes Incorporated | Description: MOSFET 2N-CH 50V 0.28A SOT-563 |
Produkt ist nicht verfügbar |
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DMP2004DMK-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 0.55A SOT-26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 550mA Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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2DD1664R-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 32V 1A SOT89-3
Description: TRANS NPN 32V 1A SOT89-3
auf Bestellung 2479 Stücke:
Lieferzeit 10-14 Tag (e)2DD2150R-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 3A SOT89-3
Description: TRANS NPN 20V 3A SOT89-3
Produkt ist nicht verfügbar
DCX53-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 80V 1A SOT89-3
Description: TRANS PNP 80V 1A SOT89-3
Produkt ist nicht verfügbar
DCX53-16-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 80V 1A SOT89-3
Description: TRANS PNP 80V 1A SOT89-3
Produkt ist nicht verfügbar
DCX69-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 1A SOT89-3
Description: TRANS PNP 20V 1A SOT89-3
auf Bestellung 1297715000 Stücke:
Lieferzeit 10-14 Tag (e)DCX69-16-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 1A SOT89-3
Description: TRANS PNP 20V 1A SOT89-3
auf Bestellung 11502 Stücke:
Lieferzeit 10-14 Tag (e)DLPD3V3LC-7 |
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 22VC SOT26
Description: TVS DIODE 3.3VWM 22VC SOT26
Produkt ist nicht verfügbar
2DB1132Q-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 32V 1A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 190MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
Description: TRANS PNP 32V 1A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 190MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
Produkt ist nicht verfügbar
2DB1188P-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 32V 2A SOT89-3
Description: TRANS PNP 32V 2A SOT89-3
Produkt ist nicht verfügbar
2DB1188Q-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 32V 2A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
Qualification: AEC-Q101
Description: TRANS PNP 32V 2A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.22 EUR |
2DD1664P-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 32V 1A SOT89-3
Description: TRANS NPN 32V 1A SOT89-3
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)3.0SMCJ22A-13 |
Hersteller: Diodes Incorporated
Description: TVS DIODE 22VWM 35.5VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3000pF @ 1MHz
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 22VWM 35.5VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3000pF @ 1MHz
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
auf Bestellung 117000 Stücke:
Lieferzeit 10-14 Tag (e)3.0SMCJ28A-13 |
Hersteller: Diodes Incorporated
Description: TVS DIODE 28VWM 45.4VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1800pF @ 1MHz
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 28VWM 45.4VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1800pF @ 1MHz
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 216000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.72 EUR |
6000+ | 0.69 EUR |
9000+ | 0.67 EUR |
3.0SMCJ30A-13 |
Hersteller: Diodes Incorporated
Description: TVS DIODE 30VWM 48.4VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1700pF @ 1MHz
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 30VWM 48.4VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1700pF @ 1MHz
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.95 EUR |
3.0SMCJ58A-13 |
Hersteller: Diodes Incorporated
Description: TVS DIODE 58VWM 93.6VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 32.1A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Description: TVS DIODE 58VWM 93.6VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 32.1A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.71 EUR |
DLP03LC-7 |
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 18VC SOT23-3
Description: TVS DIODE 3.3VWM 18VC SOT23-3
Produkt ist nicht verfügbar
DMN2100UDM-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.3A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V
Description: MOSFET N-CH 20V 3.3A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.23 EUR |
6000+ | 0.22 EUR |
9000+ | 0.2 EUR |
DMN2170U-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 2.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 217 pF @ 10 V
Description: MOSFET N-CH 20V 2.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 217 pF @ 10 V
Produkt ist nicht verfügbar
DMN3033LSN-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 6A SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V
Description: MOSFET N-CH 30V 6A SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.22 EUR |
6000+ | 0.21 EUR |
9000+ | 0.2 EUR |
30000+ | 0.19 EUR |
DMN3115UDM-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.2A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 6A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 15 V
Description: MOSFET N-CH 30V 3.2A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 6A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 15 V
Produkt ist nicht verfügbar
DXT3150-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 25V 5A SOT89-3
Description: TRANS NPN 25V 5A SOT89-3
Produkt ist nicht verfügbar
S8KC-13 |
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 800V 8A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE GEN PURP 800V 8A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 99000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.31 EUR |
6000+ | 0.3 EUR |
9000+ | 0.27 EUR |
S8MC-13 |
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 1KV 8A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 8A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 3012000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.33 EUR |
6000+ | 0.31 EUR |
9000+ | 0.29 EUR |
30000+ | 0.28 EUR |
2DB1188P-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 32V 2A SOT89-3
Description: TRANS PNP 32V 2A SOT89-3
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)2DB1188Q-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 32V 2A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
Qualification: AEC-Q101
Description: TRANS PNP 32V 2A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
32+ | 0.56 EUR |
100+ | 0.39 EUR |
500+ | 0.3 EUR |
1000+ | 0.25 EUR |
2DD1664P-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 32V 1A SOT89-3
Description: TRANS NPN 32V 1A SOT89-3
Produkt ist nicht verfügbar
2DD1766P-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 32V 2A SOT89-3
Description: TRANS NPN 32V 2A SOT89-3
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)3.0SMCJ22A-13 |
Hersteller: Diodes Incorporated
Description: TVS DIODE 22VWM 35.5VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3000pF @ 1MHz
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 22VWM 35.5VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3000pF @ 1MHz
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
auf Bestellung 117000 Stücke:
Lieferzeit 10-14 Tag (e)3.0SMCJ28A-13 |
Hersteller: Diodes Incorporated
Description: TVS DIODE 28VWM 45.4VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1800pF @ 1MHz
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 28VWM 45.4VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1800pF @ 1MHz
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 216153 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.74 EUR |
13+ | 1.42 EUR |
100+ | 1.11 EUR |
500+ | 0.94 EUR |
1000+ | 0.77 EUR |
3.0SMCJ30A-13 |
Hersteller: Diodes Incorporated
Description: TVS DIODE 30VWM 48.4VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1700pF @ 1MHz
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 30VWM 48.4VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1700pF @ 1MHz
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 45004 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.78 EUR |
13+ | 1.45 EUR |
100+ | 1.13 EUR |
500+ | 0.96 EUR |
1000+ | 0.95 EUR |
3.0SMCJ58A-13 |
Hersteller: Diodes Incorporated
Description: TVS DIODE 58VWM 93.6VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 32.1A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Description: TVS DIODE 58VWM 93.6VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 32.1A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
auf Bestellung 110230 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.9 EUR |
12+ | 1.56 EUR |
100+ | 1.21 EUR |
500+ | 1.03 EUR |
1000+ | 0.84 EUR |
DLP03LC-7 |
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 18VC SOT23-3
Description: TVS DIODE 3.3VWM 18VC SOT23-3
Produkt ist nicht verfügbar
DMN2100UDM-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.3A SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V
Description: MOSFET N-CH 20V 3.3A SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V
auf Bestellung 10790 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 0.84 EUR |
27+ | 0.66 EUR |
100+ | 0.4 EUR |
500+ | 0.37 EUR |
1000+ | 0.25 EUR |
DMN3033LSN-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 6A SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V
Description: MOSFET N-CH 30V 6A SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V
auf Bestellung 33117 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
31+ | 0.57 EUR |
100+ | 0.4 EUR |
500+ | 0.31 EUR |
1000+ | 0.25 EUR |
DXT3150-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 25V 5A SOT89-3
Description: TRANS NPN 25V 5A SOT89-3
Produkt ist nicht verfügbar
S8KC-13 |
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 800V 8A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE GEN PURP 800V 8A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 105068 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.02 EUR |
21+ | 0.88 EUR |
100+ | 0.61 EUR |
500+ | 0.51 EUR |
1000+ | 0.43 EUR |
S8MC-13 |
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 1KV 8A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 8A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 3012361 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.02 EUR |
21+ | 0.88 EUR |
100+ | 0.61 EUR |
500+ | 0.51 EUR |
1000+ | 0.43 EUR |
2DD1664P-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 32V 1A SOT89-3
Description: TRANS NPN 32V 1A SOT89-3
Produkt ist nicht verfügbar
DLP03LC-7 |
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 18VC SOT23-3
Description: TVS DIODE 3.3VWM 18VC SOT23-3
Produkt ist nicht verfügbar
2DB1132P-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 32V 1A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V
Frequency - Transition: 190MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
Description: TRANS PNP 32V 1A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V
Frequency - Transition: 190MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
Produkt ist nicht verfügbar
2DB1386Q-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 5A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Qualification: AEC-Q101
Description: TRANS PNP 20V 5A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Qualification: AEC-Q101
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.33 EUR |
5000+ | 0.31 EUR |
12500+ | 0.29 EUR |
2DD1766Q-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 32V 2A SOT89-3
Description: TRANS NPN 32V 2A SOT89-3
Produkt ist nicht verfügbar
DCX51-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP BIPO 45V SOT89-3
Description: TRANS PNP BIPO 45V SOT89-3
Produkt ist nicht verfügbar
DCX51-16-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP BIPO 45V SOT89-3
Description: TRANS PNP BIPO 45V SOT89-3
Produkt ist nicht verfügbar
DCX52-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP BIPO 60V SOT89-3
Description: TRANS PNP BIPO 60V SOT89-3
Produkt ist nicht verfügbar
DCX52-16-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 1A SOT89-3
Description: TRANS PNP 60V 1A SOT89-3
Produkt ist nicht verfügbar
DCX54-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 1A SOT89-3
Description: TRANS NPN 45V 1A SOT89-3
Produkt ist nicht verfügbar
DCX54-16-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 1A SOT89-3
Description: TRANS NPN 45V 1A SOT89-3
Produkt ist nicht verfügbar
DCX55-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN BIPO 60V SOT89-3
Description: TRANS NPN BIPO 60V SOT89-3
Produkt ist nicht verfügbar
DCX55-16-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN BIPO 60V SOT89-3
Description: TRANS NPN BIPO 60V SOT89-3
Produkt ist nicht verfügbar
DEMD48-7 |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN/PNP SOT563
Description: TRANS PREBIAS NPN/PNP SOT563
Produkt ist nicht verfügbar
DMB2227A-7 |
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 40V/60V 0.6A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V, 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz, 200MHz
Supplier Device Package: SOT-26
Part Status: Active
Description: TRANS NPN/PNP 40V/60V 0.6A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V, 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz, 200MHz
Supplier Device Package: SOT-26
Part Status: Active
auf Bestellung 198000 Stücke:
Lieferzeit 10-14 Tag (e)DMC2004LPK-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.75A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1612-6
Part Status: Active
Description: MOSFET N/P-CH 20V 0.75A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1612-6
Part Status: Active
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.23 EUR |
6000+ | 0.22 EUR |
9000+ | 0.2 EUR |
75000+ | 0.19 EUR |
DMN2005K-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 2.7V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 100µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.7V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Description: MOSFET N-CH 20V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 2.7V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 100µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.7V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
auf Bestellung 951000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.11 EUR |
DMN2005LPK-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 440MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Description: MOSFET N-CH 20V 440MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
auf Bestellung 1350000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
9000+ | 0.15 EUR |
75000+ | 0.12 EUR |
DMN2230U-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 10 V
Description: MOSFET N-CH 20V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 10 V
Produkt ist nicht verfügbar
DMN3200U-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 2.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Description: MOSFET N-CH 30V 2.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
auf Bestellung 501000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.2 EUR |
6000+ | 0.19 EUR |
9000+ | 0.17 EUR |
75000+ | 0.16 EUR |
DMN3300U-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 193 pF @ 10 V
Description: MOSFET N-CH 30V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 193 pF @ 10 V
auf Bestellung 564000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.2 EUR |
6000+ | 0.19 EUR |
9000+ | 0.17 EUR |
75000+ | 0.16 EUR |
DMN5010VAK-7 |
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.28A SOT-563
Description: MOSFET 2N-CH 50V 0.28A SOT-563
Produkt ist nicht verfügbar
DMP2004DMK-7 |
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.55A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 550mA
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Description: MOSFET 2P-CH 20V 0.55A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 550mA
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.4 EUR |
6000+ | 0.38 EUR |
15000+ | 0.35 EUR |