Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75521) > Seite 167 nach 1259
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
DZT3150-13 | Diodes Incorporated | Description: TRANS NPN 25V 5A SOT-223 |
auf Bestellung 3931 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||||
PD3Z284C13-7 | Diodes Incorporated | Description: DIODE ZENER 13V 500MW POWERDI323 |
Produkt ist nicht verfügbar |
||||||||||||||||
PD3Z284C20-7 | Diodes Incorporated | Description: DIODE ZENER 20V 500MW POWERDI323 |
auf Bestellung 567048000 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||||
PD3Z284C22-7 | Diodes Incorporated | Description: DIODE ZENER 22V 500MW POWERDI323 |
Produkt ist nicht verfügbar |
||||||||||||||||
PD3Z284C24-7 | Diodes Incorporated | Description: DIODE ZENER 24V 500MW POWERDI323 |
auf Bestellung 6363 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||||
PD3Z284C2V4-7 | Diodes Incorporated | Description: DIODE ZENER 2.4V POWERDI323 |
auf Bestellung 1433869000 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||||
PD3Z284C30-7 | Diodes Incorporated | Description: DIODE ZENER 30V 500MW POWERDI323 |
Produkt ist nicht verfügbar |
||||||||||||||||
PD3Z284C39-7 | Diodes Incorporated | Description: DIODE ZENER 39V 500MW POWERDI323 |
Produkt ist nicht verfügbar |
||||||||||||||||
PD3Z284C3V0-7 | Diodes Incorporated | Description: DIODE ZENER 3V 500MW POWERDI323 |
Produkt ist nicht verfügbar |
||||||||||||||||
PD3Z284C3V3-7 | Diodes Incorporated | Description: DIODE ZENER 3.3V POWERDI323 |
auf Bestellung 350324000 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||||
PD3Z284C4V3-7 | Diodes Incorporated | Description: DIODE ZENER 4.3V POWERDI323 |
Produkt ist nicht verfügbar |
||||||||||||||||
ZXMP10A18KTC | Diodes Incorporated |
Description: MOSFET P-CH 100V 3.8A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V Power Dissipation (Max): 2.17W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V |
auf Bestellung 23600 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
FMMT417TD | Diodes Incorporated |
Description: TRANS NPN 100V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Avalanche Mode Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 10mA, 10V Frequency - Transition: 40MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 330 mW |
auf Bestellung 86000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
DZ23C33-7-F | Diodes Incorporated | Description: DIODE ZENER ARRAY 33V SOT23-3 |
auf Bestellung 289027000 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||||
BC847PN-7-F | Diodes Incorporated |
Description: TRANS NPN/PNP 45V 0.1A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -65°C ~ 150°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V / 220 @ 2mA, 5V Frequency - Transition: 300MHz, 200MHz Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 410201 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
DCP51-13 | Diodes Incorporated | Description: TRANS PNP 45V 1A SOT-223 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||||
DCP51-16-13 | Diodes Incorporated | Description: TRANS PNP 45V 1A SOT-223 |
Produkt ist nicht verfügbar |
||||||||||||||||
DCP52-13 | Diodes Incorporated |
Description: TRANS PNP 60V 1A SOT223-3 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 200MHz Supplier Device Package: SOT-223-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
||||||||||||||||
DCP53-13 | Diodes Incorporated | Description: TRANS PNP 80V 1A SOT-223 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||||
DCP54-13 | Diodes Incorporated |
Description: TRANS NPN 45V 1A SOT223-3 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 200MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
||||||||||||||||
DCP54-16-13 | Diodes Incorporated |
Description: TRANS NPN 45V 1A SOT223-3 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 200MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
||||||||||||||||
DCP68-13 | Diodes Incorporated |
Description: TRANS NPN 20V 1A SOT-223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 330MHz Supplier Device Package: SOT-223-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1 W |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
DCP69A-13 | Diodes Incorporated |
Description: TRANS PNP 20V 1A SOT223-3 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
||||||||||||||||
DCP69A-16-13 | Diodes Incorporated |
Description: TRANS PNP 20V 1A SOT223-3 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
||||||||||||||||
DMC2004DWK-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 390000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
DMC2004VK-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V SOT-563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 670mA, 530mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||||
DZT2222A-13 | Diodes Incorporated |
Description: TRANS NPN 40V 0.6A SOT223-3 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: SOT-223-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
DZT2907A-13 | Diodes Incorporated |
Description: TRANS PNP 60V 0.6A SOT223-3 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-223-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
auf Bestellung 97500 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
DZT491-13 | Diodes Incorporated |
Description: TRANS NPN 60V 1A SOT223-3 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-223-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
||||||||||||||||
DZT591C-13 | Diodes Incorporated |
Description: TRANS PNP 60V 1A SOT223-3 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-223-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
||||||||||||||||
DZTA42-13 | Diodes Incorporated |
Description: TRANS NPN 300V 0.5A SOT223-3 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1 W |
auf Bestellung 92500 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
DZTA92-13 | Diodes Incorporated | Description: TRANS PNP 300V 0.5A SOT-223 |
Produkt ist nicht verfügbar |
||||||||||||||||
SBR40U300CT | Diodes Incorporated |
Description: DIODE ARR SBR 300V 20A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 300 V |
auf Bestellung 10059 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
SBR60A300CT | Diodes Incorporated |
Description: DIODE ARR SBR 300V 30A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 300 V |
auf Bestellung 6233 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
DCP51-13 | Diodes Incorporated | Description: TRANS PNP 45V 1A SOT-223 |
auf Bestellung 2036 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||||
DCP51-16-13 | Diodes Incorporated | Description: TRANS PNP 45V 1A SOT-223 |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||||
DCP52-13 | Diodes Incorporated |
Description: TRANS PNP 60V 1A SOT223-3 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 200MHz Supplier Device Package: SOT-223-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
||||||||||||||||
DCP53-13 | Diodes Incorporated | Description: TRANS PNP 80V 1A SOT-223 |
auf Bestellung 4010 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||||
DCP54-13 | Diodes Incorporated |
Description: TRANS NPN 45V 1A SOT223-3 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 200MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
||||||||||||||||
DCP54-16-13 | Diodes Incorporated |
Description: TRANS NPN 45V 1A SOT223-3 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 200MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
||||||||||||||||
DCP55-13 | Diodes Incorporated | Description: TRANS NPN 60V 1A SOT-223 |
auf Bestellung 434 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
DCP56-13 | Diodes Incorporated | Description: TRANS NPN 80V 1A SOT223-3 |
Produkt ist nicht verfügbar |
||||||||||||||||
DCP68-13 | Diodes Incorporated |
Description: TRANS NPN 20V 1A SOT-223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 330MHz Supplier Device Package: SOT-223-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1 W |
auf Bestellung 6852 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
DCP69A-13 | Diodes Incorporated |
Description: TRANS PNP 20V 1A SOT223-3 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
||||||||||||||||
DCP69A-16-13 | Diodes Incorporated |
Description: TRANS PNP 20V 1A SOT223-3 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
||||||||||||||||
DMC2004DWK-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 394137 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
DMC2004VK-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V SOT-563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 670mA, 530mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||||
DZT2222A-13 | Diodes Incorporated |
Description: TRANS NPN 40V 0.6A SOT223-3 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: SOT-223-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W |
auf Bestellung 28495 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
DZT2907A-13 | Diodes Incorporated |
Description: TRANS PNP 60V 0.6A SOT223-3 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-223-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
auf Bestellung 99505 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
DZT491-13 | Diodes Incorporated |
Description: TRANS NPN 60V 1A SOT223-3 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-223-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
||||||||||||||||
DZT591C-13 | Diodes Incorporated |
Description: TRANS PNP 60V 1A SOT223-3 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-223-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
||||||||||||||||
DZTA42-13 | Diodes Incorporated |
Description: TRANS NPN 300V 0.5A SOT223-3 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1 W |
auf Bestellung 94772 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
DZTA92-13 | Diodes Incorporated | Description: TRANS PNP 300V 0.5A SOT-223 |
Produkt ist nicht verfügbar |
||||||||||||||||
SBR2A40P1-7 | Diodes Incorporated |
Description: DIODE SBR 40V 2A POWERDI123 Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 2A Supplier Device Package: PowerDI™ 123 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
SBR02M30LP-7 | Diodes Incorporated |
Description: DIODE SBR 30V 200MA 2DFN Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Super Barrier Current - Average Rectified (Io): 200mA Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 30 V |
auf Bestellung 225000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
SBR02U100LP-7 | Diodes Incorporated |
Description: DIODE SBR 100V 250MA 2DFN Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 250mA Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
auf Bestellung 159000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
SBR05U20LP-7 | Diodes Incorporated | Description: DIODE SBR 20V 500MA 2DFN |
auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||||
SBR2A40P1-7 | Diodes Incorporated |
Description: DIODE SBR 40V 2A POWERDI123 Packaging: Cut Tape (CT) Package / Case: POWERDI®123 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 2A Supplier Device Package: PowerDI™ 123 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
auf Bestellung 17532 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
SBR02M30LP-7 | Diodes Incorporated |
Description: DIODE SBR 30V 200MA 2DFN Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Super Barrier Current - Average Rectified (Io): 200mA Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 30 V |
auf Bestellung 230318 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
SBR02U100LP-7 | Diodes Incorporated |
Description: DIODE SBR 100V 250MA 2DFN Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 250mA Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
auf Bestellung 166054 Stücke: Lieferzeit 10-14 Tag (e) |
|
DZT3150-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 25V 5A SOT-223
Description: TRANS NPN 25V 5A SOT-223
auf Bestellung 3931 Stücke:
Lieferzeit 10-14 Tag (e)PD3Z284C13-7 |
Hersteller: Diodes Incorporated
Description: DIODE ZENER 13V 500MW POWERDI323
Description: DIODE ZENER 13V 500MW POWERDI323
Produkt ist nicht verfügbar
PD3Z284C20-7 |
Hersteller: Diodes Incorporated
Description: DIODE ZENER 20V 500MW POWERDI323
Description: DIODE ZENER 20V 500MW POWERDI323
auf Bestellung 567048000 Stücke:
Lieferzeit 10-14 Tag (e)PD3Z284C22-7 |
Hersteller: Diodes Incorporated
Description: DIODE ZENER 22V 500MW POWERDI323
Description: DIODE ZENER 22V 500MW POWERDI323
Produkt ist nicht verfügbar
PD3Z284C24-7 |
Hersteller: Diodes Incorporated
Description: DIODE ZENER 24V 500MW POWERDI323
Description: DIODE ZENER 24V 500MW POWERDI323
auf Bestellung 6363 Stücke:
Lieferzeit 10-14 Tag (e)PD3Z284C2V4-7 |
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.4V POWERDI323
Description: DIODE ZENER 2.4V POWERDI323
auf Bestellung 1433869000 Stücke:
Lieferzeit 10-14 Tag (e)PD3Z284C30-7 |
Hersteller: Diodes Incorporated
Description: DIODE ZENER 30V 500MW POWERDI323
Description: DIODE ZENER 30V 500MW POWERDI323
Produkt ist nicht verfügbar
PD3Z284C39-7 |
Hersteller: Diodes Incorporated
Description: DIODE ZENER 39V 500MW POWERDI323
Description: DIODE ZENER 39V 500MW POWERDI323
Produkt ist nicht verfügbar
PD3Z284C3V0-7 |
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3V 500MW POWERDI323
Description: DIODE ZENER 3V 500MW POWERDI323
Produkt ist nicht verfügbar
PD3Z284C3V3-7 |
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.3V POWERDI323
Description: DIODE ZENER 3.3V POWERDI323
auf Bestellung 350324000 Stücke:
Lieferzeit 10-14 Tag (e)PD3Z284C4V3-7 |
Hersteller: Diodes Incorporated
Description: DIODE ZENER 4.3V POWERDI323
Description: DIODE ZENER 4.3V POWERDI323
Produkt ist nicht verfügbar
ZXMP10A18KTC |
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 3.8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.17W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
Description: MOSFET P-CH 100V 3.8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.17W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
auf Bestellung 23600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.96 EUR |
5000+ | 0.91 EUR |
12500+ | 0.87 EUR |
FMMT417TD |
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 330 mW
Description: TRANS NPN 100V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 330 mW
auf Bestellung 86000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
500+ | 9.27 EUR |
DZ23C33-7-F |
Hersteller: Diodes Incorporated
Description: DIODE ZENER ARRAY 33V SOT23-3
Description: DIODE ZENER ARRAY 33V SOT23-3
auf Bestellung 289027000 Stücke:
Lieferzeit 10-14 Tag (e)BC847PN-7-F |
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 45V 0.1A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V / 220 @ 2mA, 5V
Frequency - Transition: 300MHz, 200MHz
Supplier Device Package: SOT-363
Part Status: Active
Description: TRANS NPN/PNP 45V 0.1A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V / 220 @ 2mA, 5V
Frequency - Transition: 300MHz, 200MHz
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 410201 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.1 EUR |
6000+ | 0.097 EUR |
9000+ | 0.084 EUR |
30000+ | 0.082 EUR |
75000+ | 0.068 EUR |
150000+ | 0.067 EUR |
DCP51-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 45V 1A SOT-223
Description: TRANS PNP 45V 1A SOT-223
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)DCP51-16-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 45V 1A SOT-223
Description: TRANS PNP 45V 1A SOT-223
Produkt ist nicht verfügbar
DCP52-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 1A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS PNP 60V 1A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Produkt ist nicht verfügbar
DCP53-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 80V 1A SOT-223
Description: TRANS PNP 80V 1A SOT-223
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)DCP54-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 1A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
Description: TRANS NPN 45V 1A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
Produkt ist nicht verfügbar
DCP54-16-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 1A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
Description: TRANS NPN 45V 1A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
Produkt ist nicht verfügbar
DCP68-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 330MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Description: TRANS NPN 20V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 330MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.22 EUR |
5000+ | 0.2 EUR |
DCP69A-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 1A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Description: TRANS PNP 20V 1A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Produkt ist nicht verfügbar
DCP69A-16-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 1A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Description: TRANS PNP 20V 1A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Produkt ist nicht verfügbar
DMC2004DWK-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: MOSFET N/P-CH 20V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 390000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
DMC2004VK-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 670mA, 530mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Obsolete
Description: MOSFET N/P-CH 20V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 670mA, 530mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Obsolete
Produkt ist nicht verfügbar
DZT2222A-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 0.6A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Description: TRANS NPN 40V 0.6A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.096 EUR |
5000+ | 0.092 EUR |
12500+ | 0.08 EUR |
DZT2907A-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 0.6A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS PNP 60V 0.6A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
auf Bestellung 97500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.11 EUR |
12500+ | 0.093 EUR |
25000+ | 0.091 EUR |
62500+ | 0.075 EUR |
DZT491-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 1A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS NPN 60V 1A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Produkt ist nicht verfügbar
DZT591C-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 1A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS PNP 60V 1A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Produkt ist nicht verfügbar
DZTA42-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 300V 0.5A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Description: TRANS NPN 300V 0.5A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
auf Bestellung 92500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.28 EUR |
5000+ | 0.26 EUR |
12500+ | 0.24 EUR |
25000+ | 0.23 EUR |
62500+ | 0.22 EUR |
DZTA92-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 300V 0.5A SOT-223
Description: TRANS PNP 300V 0.5A SOT-223
Produkt ist nicht verfügbar
SBR40U300CT |
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 300V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Description: DIODE ARR SBR 300V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
auf Bestellung 10059 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.56 EUR |
50+ | 2.86 EUR |
100+ | 2.35 EUR |
500+ | 1.99 EUR |
1000+ | 1.69 EUR |
2000+ | 1.6 EUR |
5000+ | 1.54 EUR |
SBR60A300CT |
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 300V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Description: DIODE ARR SBR 300V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
auf Bestellung 6233 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.53 EUR |
50+ | 5.17 EUR |
100+ | 4.43 EUR |
500+ | 3.94 EUR |
1000+ | 3.37 EUR |
2000+ | 3.18 EUR |
5000+ | 3.05 EUR |
DCP51-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 45V 1A SOT-223
Description: TRANS PNP 45V 1A SOT-223
auf Bestellung 2036 Stücke:
Lieferzeit 10-14 Tag (e)DCP51-16-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 45V 1A SOT-223
Description: TRANS PNP 45V 1A SOT-223
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)DCP52-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 1A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS PNP 60V 1A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Produkt ist nicht verfügbar
DCP53-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 80V 1A SOT-223
Description: TRANS PNP 80V 1A SOT-223
auf Bestellung 4010 Stücke:
Lieferzeit 10-14 Tag (e)DCP54-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 1A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
Description: TRANS NPN 45V 1A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
Produkt ist nicht verfügbar
DCP54-16-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 1A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
Description: TRANS NPN 45V 1A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
Produkt ist nicht verfügbar
DCP55-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 1A SOT-223
Description: TRANS NPN 60V 1A SOT-223
auf Bestellung 434 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
30+ | 0.6 EUR |
100+ | 0.45 EUR |
DCP56-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 1A SOT223-3
Description: TRANS NPN 80V 1A SOT223-3
Produkt ist nicht verfügbar
DCP68-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 330MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Description: TRANS NPN 20V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 330MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
auf Bestellung 6852 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
33+ | 0.55 EUR |
100+ | 0.38 EUR |
500+ | 0.3 EUR |
1000+ | 0.24 EUR |
DCP69A-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 1A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Description: TRANS PNP 20V 1A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Produkt ist nicht verfügbar
DCP69A-16-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 1A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Description: TRANS PNP 20V 1A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Produkt ist nicht verfügbar
DMC2004DWK-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: MOSFET N/P-CH 20V SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 394137 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 0.56 EUR |
41+ | 0.43 EUR |
100+ | 0.26 EUR |
500+ | 0.24 EUR |
1000+ | 0.17 EUR |
DMC2004VK-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 670mA, 530mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Obsolete
Description: MOSFET N/P-CH 20V SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 670mA, 530mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Obsolete
Produkt ist nicht verfügbar
DZT2222A-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 0.6A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Description: TRANS NPN 40V 0.6A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
auf Bestellung 28495 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
33+ | 0.55 EUR |
47+ | 0.37 EUR |
100+ | 0.19 EUR |
500+ | 0.15 EUR |
1000+ | 0.11 EUR |
DZT2907A-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 0.6A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS PNP 60V 0.6A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
auf Bestellung 99505 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
41+ | 0.44 EUR |
100+ | 0.22 EUR |
500+ | 0.18 EUR |
1000+ | 0.13 EUR |
DZT491-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 1A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS NPN 60V 1A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Produkt ist nicht verfügbar
DZT591C-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 1A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS PNP 60V 1A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Produkt ist nicht verfügbar
DZTA42-13 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 300V 0.5A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Description: TRANS NPN 300V 0.5A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
auf Bestellung 94772 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
27+ | 0.67 EUR |
100+ | 0.5 EUR |
500+ | 0.39 EUR |
1000+ | 0.3 EUR |
DZTA92-13 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 300V 0.5A SOT-223
Description: TRANS PNP 300V 0.5A SOT-223
Produkt ist nicht verfügbar
SBR2A40P1-7 |
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 2A POWERDI123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SBR 40V 2A POWERDI123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.2 EUR |
6000+ | 0.19 EUR |
9000+ | 0.17 EUR |
SBR02M30LP-7 |
Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 200MA 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Super Barrier
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Description: DIODE SBR 30V 200MA 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Super Barrier
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
auf Bestellung 225000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.21 EUR |
6000+ | 0.2 EUR |
9000+ | 0.18 EUR |
30000+ | 0.17 EUR |
75000+ | 0.16 EUR |
SBR02U100LP-7 |
Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 250MA 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 250mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE SBR 100V 250MA 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 250mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 159000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.22 EUR |
6000+ | 0.21 EUR |
9000+ | 0.19 EUR |
75000+ | 0.17 EUR |
SBR05U20LP-7 |
Hersteller: Diodes Incorporated
Description: DIODE SBR 20V 500MA 2DFN
Description: DIODE SBR 20V 500MA 2DFN
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)SBR2A40P1-7 |
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 2A POWERDI123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SBR 40V 2A POWERDI123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 17532 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.74 EUR |
31+ | 0.58 EUR |
100+ | 0.35 EUR |
500+ | 0.32 EUR |
1000+ | 0.22 EUR |
SBR02M30LP-7 |
Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 200MA 2DFN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Super Barrier
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Description: DIODE SBR 30V 200MA 2DFN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Super Barrier
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
auf Bestellung 230318 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.76 EUR |
30+ | 0.59 EUR |
100+ | 0.35 EUR |
500+ | 0.33 EUR |
1000+ | 0.22 EUR |
SBR02U100LP-7 |
Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 250MA 2DFN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 250mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE SBR 100V 250MA 2DFN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 250mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 166054 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 0.81 EUR |
29+ | 0.63 EUR |
100+ | 0.38 EUR |
500+ | 0.35 EUR |
1000+ | 0.24 EUR |