| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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W005G-E4/51 | VISHAY |
 Category: Round single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1.5A; Ifsm: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 1.5A Max. forward impulse current: 50A Version: round Case: WOG Electrical mounting: THT Leads: wire Ø 0.75mm Kind of package: bulk |
auf Bestellung 2403 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW06035K49FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 5.49kΩ; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 5.49kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
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SMBZ5921B-E3/52 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 6.8V; SMD; reel,tape; SMB; single diode; 200uA Mounting: SMD Case: SMB Kind of package: reel; tape Power dissipation: 3W Semiconductor structure: single diode Leakage current: 0.2mA Zener voltage: 6.8V Type of diode: Zener Tolerance: ±5% |
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SMBZ5921B-E3/5B | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 6.8V; SMD; reel,tape; SMB; single diode; 200uA Mounting: SMD Case: SMB Kind of package: reel; tape Power dissipation: 3W Semiconductor structure: single diode Leakage current: 0.2mA Zener voltage: 6.8V Type of diode: Zener Tolerance: ±5% |
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SMBZ5921B-M3/52 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 6.8V; SMD; reel,tape; SMB; single diode; 200uA Mounting: SMD Case: SMB Kind of package: reel; tape Power dissipation: 3W Semiconductor structure: single diode Leakage current: 0.2mA Zener voltage: 6.8V Type of diode: Zener Tolerance: ±5% |
Produkt ist nicht verfügbar |
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CRCW1206300RJNTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 300Ω; 0.25W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 300Ω Power: 0.25W Tolerance: ±5% Max. operating voltage: 200V Operating temperature: -55...155°C |
Produkt ist nicht verfügbar |
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| IRFU014PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFU430APBF | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 110W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 110W Case: IPAK; TO251 Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFU9014PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; 25W; IPAK,TO251 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.2A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 173 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFU9020PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -9.9A Pulsed drain current: -40A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFU9110PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -3.1A; Idm: -12A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -3.1A Pulsed drain current: -12A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 8.7nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFU9214PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -250V Drain current: -2.7A Pulsed drain current: -11A Power dissipation: 50W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFU9220PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.6A Pulsed drain current: -14A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced |
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IRFUC20PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; 42W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.3A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 311 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFI620GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 4.1A; Idm: 16A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 4.1A Pulsed drain current: 16A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced |
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| SI1442DH-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 4A; Idm: 20A; 2.8W Mounting: SMD Case: SC70-6; SOT363 Pulsed drain current: 20A Power dissipation: 2.8W Gate charge: 33nC Polarisation: unipolar Technology: TrenchFET® Drain current: 4A Kind of channel: enhanced Drain-source voltage: 12V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 30mΩ |
Produkt ist nicht verfügbar |
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| GSC00AB4R71VARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 4.7uF; 35VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 4.7µF Operating voltage: 35V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 4x5.7mm Height: 5.7mm |
Produkt ist nicht verfügbar |
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SQ2315ES-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 0.67W; SOT23 Mounting: SMD Polarisation: unipolar Case: SOT23 Application: automotive industry Power dissipation: 0.67W Kind of package: reel; tape Gate charge: 13nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Drain-source voltage: -12V Drain current: -5A On-state resistance: 75mΩ Type of transistor: P-MOSFET |
auf Bestellung 1957 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI7114ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 60A; 39W Mounting: SMD Power dissipation: 39W Polarisation: unipolar Kind of package: reel; tape Gate charge: 32nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 35A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| SI7114DN-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A Mounting: SMD Power dissipation: 3.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 18.3A On-state resistance: 10mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| SI7114DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A Mounting: SMD Power dissipation: 3.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 18.3A On-state resistance: 10mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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RCA060315K0FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 15kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Resistance: 15kΩ Tolerance: ±1% Power: 0.1W Operating temperature: -55...155°C Max. operating voltage: 75V Temperature coefficient: 100ppm/°C Case - inch: 0603 Case - mm: 1608 Conform to the norm: AEC Q200 |
Produkt ist nicht verfügbar |
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RCA060315K0JNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 15kΩ; 100mW; ±5%; -55÷155°C; 200ppm/°C Type of resistor: thick film Resistance: 15kΩ Tolerance: ±5% Power: 0.1W Operating temperature: -55...155°C Max. operating voltage: 75V Temperature coefficient: 200ppm/°C Case - inch: 0603 Case - mm: 1608 Conform to the norm: AEC Q200 |
Produkt ist nicht verfügbar |
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BZX85C39-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 39V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 39V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 9910 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ16CA-E3/57T | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 17.8V; 57.7A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 16V Breakdown voltage: 17.8V Max. forward impulse current: 57.7A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMCJ |
Produkt ist nicht verfügbar |
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| CNY17-4X006 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 160-320%@10mA Collector-emitter voltage: 70V Case: DIP6 Conform to the norm: UL Turn-on time: 3µs Turn-off time: 2µs Max. off-state voltage: 6V Manufacturer series: CNY17 |
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TSTA7100 | VISHAY |
Category: IR LEDs Description: IR transmitter; 5.5mm; 875nm; transparent; 50mW; 5°; THT Mounting: THT Optical power: 50mW LED diameter: 5.5mm Type of diode: IR transmitter Wavelength: 875nm LED lens: transparent Viewing angle: 5° |
Produkt ist nicht verfügbar |
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| SQJ431EP-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -12A; Idm: -40A; 27W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -12A Pulsed drain current: -40A Power dissipation: 27W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 527mΩ Mounting: SMD Gate charge: 106nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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SQJ481EP-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -80V; -9.2A; 15W; PowerPAK® SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -80V Drain current: -9.2A Power dissipation: 15W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2993 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI7116BDN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 65A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 65A Pulsed drain current: 100A Power dissipation: 62.5W Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI7116DN-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 16.4A Pulsed drain current: 60A Power dissipation: 3.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI7116DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 16.4A Pulsed drain current: 60A Power dissipation: 3.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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CRCW120614R0FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 14Ω; 0.25W; ±1%; -55÷155°C Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 14Ω Operating temperature: -55...155°C Tolerance: ±1% Power: 0.25W Max. operating voltage: 200V Type of resistor: thick film |
auf Bestellung 5800 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW08056K49FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 6.49kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 6.49kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
auf Bestellung 13700 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ1210A222JXRAT5Z | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 2.2nF; 1.5kV; C0G (NP0); ±5%; SMD; 1210 Mounting: SMD Capacitance: 2.2nF Type of capacitor: ceramic Dielectric: C0G (NP0) Operating voltage: 1.5kV Case - mm: 3225 Case - inch: 1210 Operating temperature: -55...125°C Tolerance: ±5% |
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CRCW0805487KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 487kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 487kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
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CRCW080548R7FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 48.7Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 48.7Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
auf Bestellung 2300 Stücke: Lieferzeit 14-21 Tag (e) |
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MBB02070C3320FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 332Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 332Ω Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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MMA02040C3320FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 332Ω; 0.4W; ±1%; -55÷155°C Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 332Ω Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C |
auf Bestellung 1925 Stücke: Lieferzeit 14-21 Tag (e) |
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| SQJ409EP-T1_BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -60A; Idm: -150A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -60A Pulsed drain current: -150A Power dissipation: 68W Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Gate charge: 260nC Kind of package: reel; tape Kind of channel: enhanced |
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| SQJ422EP-T1_BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 75A; Idm: 300A; 83W Kind of package: reel; tape On-state resistance: 8.9mΩ Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Gate charge: 0.1µC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A Mounting: SMD Drain-source voltage: 40V Drain current: 75A |
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| SQJ459EP-T1_BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -52A; Idm: -200A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -52A Pulsed drain current: -200A Power dissipation: 83W Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhanced |
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| SQJ459EP-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -52A; Idm: -200A; 27W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -52A Pulsed drain current: -200A Power dissipation: 27W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| SQJ461EP-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -30A; Idm: -120A; 27W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -30A Pulsed drain current: -120A Power dissipation: 27W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| SQJ463EP-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 28W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -30A Pulsed drain current: -120A Power dissipation: 28W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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CRCW0805392RFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 392Ω; 0.125W; ±1%; -55÷155°C Mounting: SMD Operating temperature: -55...155°C Case - mm: 2012 Case - inch: 0805 Type of resistor: thick film Power: 0.125W Resistance: 392Ω Tolerance: ±1% Max. operating voltage: 150V |
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| GSC00AK4720JARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 4.7mF; 6.3VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 4.7mF Operating voltage: 6.3V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 16x16.5mm Height: 16.5mm |
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| ZSC00AK4720JARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 4.7mF; 6.3VDC; Ø16x16.5mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 4.7mF Operating voltage: 6.3V DC Body dimensions: Ø16x16.5mm Tolerance: ±20% Operating temperature: -55...105°C |
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VJ0402Y682KXXCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 6.8nF; 25V; X7R; ±10%; SMD; 0402 Type of capacitor: ceramic Capacitance: 6.8nF Operating voltage: 25V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
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VJ0603Y682JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 6.8nF; 50V; X7R; ±5%; SMD; 0603 Type of capacitor: ceramic Capacitance: 6.8nF Operating voltage: 50V Dielectric: X7R Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
auf Bestellung 4300 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0603Y682KXAPW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 6.8nF; 50V; X7R; ±10%; SMD; 0603 Type of capacitor: ceramic Capacitance: 6.8nF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
auf Bestellung 32500 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0603Y682KXXAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 6.8nF; 25V; X7R; ±10%; SMD; 0603 Type of capacitor: ceramic Capacitance: 6.8nF Operating voltage: 25V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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| VDMG10A1 | VISHAY |
Category: 7-segment LED displays Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 1; green; 0.11÷0.5mcd Mounting: SMD Operating voltage: 2...2.6V Dimensions: 9.8x16x2.1mm Luminosity: 0.11...0.5mcd Kind of display: 7-segment Digit height: 10mm; 0.39" Type of display: LED Number of characters: 1 Colour: green Common electrode: anode Operating current: 20mA Wavelength: 572nm |
Produkt ist nicht verfügbar |
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| SI4186DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35.8A; Idm: 70A; 6W Mounting: SMD Kind of package: reel; tape Power dissipation: 6W Polarisation: unipolar Gate charge: 90nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Case: SO8 Drain-source voltage: 20V Drain current: 35.8A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| SIR186DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 57W Mounting: SMD Kind of package: reel; tape Power dissipation: 57W Polarisation: unipolar Gate charge: 37nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Case: PowerPAK® SO8 Drain-source voltage: 60V Drain current: 60A On-state resistance: 7.8mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| SIR186LDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 80.3A; Idm: 150A Mounting: SMD Kind of package: reel; tape Power dissipation: 57W Polarisation: unipolar Gate charge: 48nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Case: PowerPAK® SO8 Drain-source voltage: 60V Drain current: 80.3A On-state resistance: 6.3mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| TCMT1600T3 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V Case: SOP4 Turn-on time: 9µs Turn-off time: 18µs Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 80-300%@5mA Conform to the norm: UL; VDE Manufacturer series: TCMT1600 Mounting: SMD Type of optocoupler: optocoupler Collector-emitter voltage: 70V |
Produkt ist nicht verfügbar |
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| VLDTG1232G-08 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; Gull wing; green; 7100÷16000mcd; 2.3x2.3x2.8mm; 9°; 20mA Type of diode: LED Mounting: SMD Case: Gull wing LED colour: green Luminosity: 7100...16000mcd Dimensions: 2.3x2.3x2.8mm Viewing angle: 9° LED current: 20mA Wavelength: 515...541nm Front: convex Operating voltage: 2.6...3.4V |
Produkt ist nicht verfügbar |
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| VLDTG1232R-08 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; Gull wing; green; 7100÷16000mcd; 2.3x2.3x2.8mm; 9°; 20mA Type of diode: LED Mounting: SMD Case: Gull wing LED colour: green Luminosity: 7100...16000mcd Dimensions: 2.3x2.3x2.8mm Viewing angle: 9° LED current: 20mA Wavelength: 515...541nm LED version: reverse mount Front: convex Operating voltage: 2.6...3.4V |
Produkt ist nicht verfügbar |
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VEMD5160X01 | VISHAY |
Category: Photodiodes Description: PIN photodiode; SMD; 840nm; 700÷1070nm; 65°; flat; black Mounting: SMD Wavelength: 700...1070nm LED lens: black Viewing angle: 65° Type of photoelement: PIN photodiode Wavelength of peak sensitivity: 840nm Active area: 7.5mm2 Dimensions: 5x4x0.9mm Front: flat |
Produkt ist nicht verfügbar |
| W005G-E4/51 |
|
Hersteller: VISHAY
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 50A
Version: round
Case: WOG
Electrical mounting: THT
Leads: wire Ø 0.75mm
Kind of package: bulk
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 50A
Version: round
Case: WOG
Electrical mounting: THT
Leads: wire Ø 0.75mm
Kind of package: bulk
auf Bestellung 2403 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 121+ | 0.59 EUR |
| 137+ | 0.52 EUR |
| 166+ | 0.43 EUR |
| 175+ | 0.41 EUR |
| CRCW06035K49FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 5.49kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 5.49kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 5.49kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 5.49kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
| SMBZ5921B-E3/52 |
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Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.8V; SMD; reel,tape; SMB; single diode; 200uA
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Power dissipation: 3W
Semiconductor structure: single diode
Leakage current: 0.2mA
Zener voltage: 6.8V
Type of diode: Zener
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.8V; SMD; reel,tape; SMB; single diode; 200uA
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Power dissipation: 3W
Semiconductor structure: single diode
Leakage current: 0.2mA
Zener voltage: 6.8V
Type of diode: Zener
Tolerance: ±5%
Produkt ist nicht verfügbar
| SMBZ5921B-E3/5B |
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Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.8V; SMD; reel,tape; SMB; single diode; 200uA
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Power dissipation: 3W
Semiconductor structure: single diode
Leakage current: 0.2mA
Zener voltage: 6.8V
Type of diode: Zener
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.8V; SMD; reel,tape; SMB; single diode; 200uA
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Power dissipation: 3W
Semiconductor structure: single diode
Leakage current: 0.2mA
Zener voltage: 6.8V
Type of diode: Zener
Tolerance: ±5%
Produkt ist nicht verfügbar
| SMBZ5921B-M3/52 |
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Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.8V; SMD; reel,tape; SMB; single diode; 200uA
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Power dissipation: 3W
Semiconductor structure: single diode
Leakage current: 0.2mA
Zener voltage: 6.8V
Type of diode: Zener
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.8V; SMD; reel,tape; SMB; single diode; 200uA
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Power dissipation: 3W
Semiconductor structure: single diode
Leakage current: 0.2mA
Zener voltage: 6.8V
Type of diode: Zener
Tolerance: ±5%
Produkt ist nicht verfügbar
| CRCW1206300RJNTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 300Ω; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 300Ω
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 300Ω; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 300Ω
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
| IRFU014PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFU430APBF | |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 110W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 110W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 110W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 110W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFU9014PBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; 25W; IPAK,TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; 25W; IPAK,TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 173 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 64+ | 1.13 EUR |
| 124+ | 0.58 EUR |
| 141+ | 0.51 EUR |
| 156+ | 0.46 EUR |
| 165+ | 0.43 EUR |
| IRFU9020PBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFU9110PBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.1A; Idm: -12A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.1A
Pulsed drain current: -12A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.1A; Idm: -12A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.1A
Pulsed drain current: -12A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFU9214PBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFU9220PBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Pulsed drain current: -14A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Pulsed drain current: -14A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFUC20PBF | |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 311 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 69+ | 1.04 EUR |
| 93+ | 0.78 EUR |
| 106+ | 0.68 EUR |
| 109+ | 0.66 EUR |
| 117+ | 0.61 EUR |
| 300+ | 0.59 EUR |
| IRFI620GPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.1A; Idm: 16A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.1A
Pulsed drain current: 16A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.1A; Idm: 16A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.1A
Pulsed drain current: 16A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI1442DH-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 4A; Idm: 20A; 2.8W
Mounting: SMD
Case: SC70-6; SOT363
Pulsed drain current: 20A
Power dissipation: 2.8W
Gate charge: 33nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 4A
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 30mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 4A; Idm: 20A; 2.8W
Mounting: SMD
Case: SC70-6; SOT363
Pulsed drain current: 20A
Power dissipation: 2.8W
Gate charge: 33nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 4A
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 30mΩ
Produkt ist nicht verfügbar
| GSC00AB4R71VARL |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 4.7uF; 35VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 4x5.7mm
Height: 5.7mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 4.7uF; 35VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 4x5.7mm
Height: 5.7mm
Produkt ist nicht verfügbar
| SQ2315ES-T1_GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 0.67W; SOT23
Mounting: SMD
Polarisation: unipolar
Case: SOT23
Application: automotive industry
Power dissipation: 0.67W
Kind of package: reel; tape
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
Drain current: -5A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 0.67W; SOT23
Mounting: SMD
Polarisation: unipolar
Case: SOT23
Application: automotive industry
Power dissipation: 0.67W
Kind of package: reel; tape
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
Drain current: -5A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
auf Bestellung 1957 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 125+ | 0.57 EUR |
| 171+ | 0.42 EUR |
| 214+ | 0.33 EUR |
| 227+ | 0.32 EUR |
| SI7114ADN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 60A; 39W
Mounting: SMD
Power dissipation: 39W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 60A; 39W
Mounting: SMD
Power dissipation: 39W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| SI7114DN-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| SI7114DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| RCA060315K0FKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 15kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 15kΩ
Tolerance: ±1%
Power: 0.1W
Operating temperature: -55...155°C
Max. operating voltage: 75V
Temperature coefficient: 100ppm/°C
Case - inch: 0603
Case - mm: 1608
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 15kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 15kΩ
Tolerance: ±1%
Power: 0.1W
Operating temperature: -55...155°C
Max. operating voltage: 75V
Temperature coefficient: 100ppm/°C
Case - inch: 0603
Case - mm: 1608
Conform to the norm: AEC Q200
Produkt ist nicht verfügbar
| RCA060315K0JNEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 15kΩ; 100mW; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Resistance: 15kΩ
Tolerance: ±5%
Power: 0.1W
Operating temperature: -55...155°C
Max. operating voltage: 75V
Temperature coefficient: 200ppm/°C
Case - inch: 0603
Case - mm: 1608
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 15kΩ; 100mW; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Resistance: 15kΩ
Tolerance: ±5%
Power: 0.1W
Operating temperature: -55...155°C
Max. operating voltage: 75V
Temperature coefficient: 200ppm/°C
Case - inch: 0603
Case - mm: 1608
Conform to the norm: AEC Q200
Produkt ist nicht verfügbar
| BZX85C39-TAP |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 39V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 39V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 39V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 39V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 9910 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 570+ | 0.13 EUR |
| 1140+ | 0.063 EUR |
| 1280+ | 0.056 EUR |
| 1520+ | 0.047 EUR |
| 1610+ | 0.045 EUR |
| SMCJ16CA-E3/57T |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 17.8V; 57.7A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8V
Max. forward impulse current: 57.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 17.8V; 57.7A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8V
Max. forward impulse current: 57.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
| CNY17-4X006 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 2µs
Max. off-state voltage: 6V
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 2µs
Max. off-state voltage: 6V
Manufacturer series: CNY17
Produkt ist nicht verfügbar
| TSTA7100 |
|
Hersteller: VISHAY
Category: IR LEDs
Description: IR transmitter; 5.5mm; 875nm; transparent; 50mW; 5°; THT
Mounting: THT
Optical power: 50mW
LED diameter: 5.5mm
Type of diode: IR transmitter
Wavelength: 875nm
LED lens: transparent
Viewing angle: 5°
Category: IR LEDs
Description: IR transmitter; 5.5mm; 875nm; transparent; 50mW; 5°; THT
Mounting: THT
Optical power: 50mW
LED diameter: 5.5mm
Type of diode: IR transmitter
Wavelength: 875nm
LED lens: transparent
Viewing angle: 5°
Produkt ist nicht verfügbar
| SQJ431EP-T1_GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -12A; Idm: -40A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -12A
Pulsed drain current: -40A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 527mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -12A; Idm: -40A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -12A
Pulsed drain current: -40A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 527mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| SQJ481EP-T1_GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -9.2A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -9.2A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -9.2A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -9.2A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2993 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 61+ | 1.19 EUR |
| 74+ | 0.97 EUR |
| 103+ | 0.7 EUR |
| 107+ | 0.67 EUR |
| SI7116BDN-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 65A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Pulsed drain current: 100A
Power dissipation: 62.5W
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 65A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Pulsed drain current: 100A
Power dissipation: 62.5W
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI7116DN-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16.4A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16.4A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI7116DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16.4A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16.4A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| CRCW120614R0FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 14Ω; 0.25W; ±1%; -55÷155°C
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 14Ω
Operating temperature: -55...155°C
Tolerance: ±1%
Power: 0.25W
Max. operating voltage: 200V
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 14Ω; 0.25W; ±1%; -55÷155°C
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 14Ω
Operating temperature: -55...155°C
Tolerance: ±1%
Power: 0.25W
Max. operating voltage: 200V
Type of resistor: thick film
auf Bestellung 5800 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1700+ | 0.044 EUR |
| 2800+ | 0.026 EUR |
| 4400+ | 0.017 EUR |
| 5800+ | 0.012 EUR |
| CRCW08056K49FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 6.49kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 6.49kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 6.49kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 6.49kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
auf Bestellung 13700 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2200+ | 0.034 EUR |
| 4000+ | 0.018 EUR |
| 6500+ | 0.011 EUR |
| 13700+ | 0.0051 EUR |
| VJ1210A222JXRAT5Z |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 2.2nF; 1.5kV; C0G (NP0); ±5%; SMD; 1210
Mounting: SMD
Capacitance: 2.2nF
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Operating voltage: 1.5kV
Case - mm: 3225
Case - inch: 1210
Operating temperature: -55...125°C
Tolerance: ±5%
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 2.2nF; 1.5kV; C0G (NP0); ±5%; SMD; 1210
Mounting: SMD
Capacitance: 2.2nF
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Operating voltage: 1.5kV
Case - mm: 3225
Case - inch: 1210
Operating temperature: -55...125°C
Tolerance: ±5%
Produkt ist nicht verfügbar
| CRCW0805487KFKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 487kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 487kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 487kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 487kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
| CRCW080548R7FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 48.7Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 48.7Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 48.7Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 48.7Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
auf Bestellung 2300 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.036 EUR |
| 2300+ | 0.031 EUR |
| MBB02070C3320FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 332Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 332Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 332Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 332Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 600+ | 0.12 EUR |
| MMA02040C3320FB300 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 332Ω; 0.4W; ±1%; -55÷155°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 332Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 332Ω; 0.4W; ±1%; -55÷155°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 332Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
auf Bestellung 1925 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 775+ | 0.093 EUR |
| 1275+ | 0.056 EUR |
| 1775+ | 0.04 EUR |
| 1925+ | 0.037 EUR |
| SQJ409EP-T1_BE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -60A; Idm: -150A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -60A
Pulsed drain current: -150A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -60A; Idm: -150A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -60A
Pulsed drain current: -150A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SQJ422EP-T1_BE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 75A; Idm: 300A; 83W
Kind of package: reel; tape
On-state resistance: 8.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 0.1µC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Drain-source voltage: 40V
Drain current: 75A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 75A; Idm: 300A; 83W
Kind of package: reel; tape
On-state resistance: 8.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 0.1µC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Drain-source voltage: 40V
Drain current: 75A
Produkt ist nicht verfügbar
| SQJ459EP-T1_BE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -52A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 83W
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -52A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 83W
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SQJ459EP-T1_GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -52A; Idm: -200A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -52A; Idm: -200A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| SQJ461EP-T1_GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; Idm: -120A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; Idm: -120A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| SQJ463EP-T1_GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 28W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 28W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| CRCW0805392RFKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 392Ω; 0.125W; ±1%; -55÷155°C
Mounting: SMD
Operating temperature: -55...155°C
Case - mm: 2012
Case - inch: 0805
Type of resistor: thick film
Power: 0.125W
Resistance: 392Ω
Tolerance: ±1%
Max. operating voltage: 150V
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 392Ω; 0.125W; ±1%; -55÷155°C
Mounting: SMD
Operating temperature: -55...155°C
Case - mm: 2012
Case - inch: 0805
Type of resistor: thick film
Power: 0.125W
Resistance: 392Ω
Tolerance: ±1%
Max. operating voltage: 150V
Produkt ist nicht verfügbar
| GSC00AK4720JARL |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 4.7mF; 6.3VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 4.7mF
Operating voltage: 6.3V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 16x16.5mm
Height: 16.5mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 4.7mF; 6.3VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 4.7mF
Operating voltage: 6.3V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 16x16.5mm
Height: 16.5mm
Produkt ist nicht verfügbar
| ZSC00AK4720JARL |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 4.7mF; 6.3VDC; Ø16x16.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 4.7mF
Operating voltage: 6.3V DC
Body dimensions: Ø16x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 4.7mF; 6.3VDC; Ø16x16.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 4.7mF
Operating voltage: 6.3V DC
Body dimensions: Ø16x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Produkt ist nicht verfügbar
| VJ0402Y682KXXCW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 6.8nF; 25V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 6.8nF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 6.8nF; 25V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 6.8nF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ0603Y682JXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 6.8nF; 50V; X7R; ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 6.8nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 6.8nF; 50V; X7R; ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 6.8nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 4300 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2400+ | 0.031 EUR |
| 4300+ | 0.017 EUR |
| VJ0603Y682KXAPW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 6.8nF; 50V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 6.8nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 6.8nF; 50V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 6.8nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 32500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3800+ | 0.019 EUR |
| 11200+ | 0.0064 EUR |
| 14400+ | 0.005 EUR |
| 15200+ | 0.0047 EUR |
| VJ0603Y682KXXAC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 6.8nF; 25V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 6.8nF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 6.8nF; 25V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 6.8nF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VDMG10A1 |
|
Hersteller: VISHAY
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 1; green; 0.11÷0.5mcd
Mounting: SMD
Operating voltage: 2...2.6V
Dimensions: 9.8x16x2.1mm
Luminosity: 0.11...0.5mcd
Kind of display: 7-segment
Digit height: 10mm; 0.39"
Type of display: LED
Number of characters: 1
Colour: green
Common electrode: anode
Operating current: 20mA
Wavelength: 572nm
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 1; green; 0.11÷0.5mcd
Mounting: SMD
Operating voltage: 2...2.6V
Dimensions: 9.8x16x2.1mm
Luminosity: 0.11...0.5mcd
Kind of display: 7-segment
Digit height: 10mm; 0.39"
Type of display: LED
Number of characters: 1
Colour: green
Common electrode: anode
Operating current: 20mA
Wavelength: 572nm
Produkt ist nicht verfügbar
| SI4186DY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35.8A; Idm: 70A; 6W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 6W
Polarisation: unipolar
Gate charge: 90nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Case: SO8
Drain-source voltage: 20V
Drain current: 35.8A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35.8A; Idm: 70A; 6W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 6W
Polarisation: unipolar
Gate charge: 90nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Case: SO8
Drain-source voltage: 20V
Drain current: 35.8A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| SIR186DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 57W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 57W
Polarisation: unipolar
Gate charge: 37nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 57W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 57W
Polarisation: unipolar
Gate charge: 37nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| SIR186LDP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 80.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 57W
Polarisation: unipolar
Gate charge: 48nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 80.3A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 80.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 57W
Polarisation: unipolar
Gate charge: 48nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 80.3A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| TCMT1600T3 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V
Case: SOP4
Turn-on time: 9µs
Turn-off time: 18µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 80-300%@5mA
Conform to the norm: UL; VDE
Manufacturer series: TCMT1600
Mounting: SMD
Type of optocoupler: optocoupler
Collector-emitter voltage: 70V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V
Case: SOP4
Turn-on time: 9µs
Turn-off time: 18µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 80-300%@5mA
Conform to the norm: UL; VDE
Manufacturer series: TCMT1600
Mounting: SMD
Type of optocoupler: optocoupler
Collector-emitter voltage: 70V
Produkt ist nicht verfügbar
| VLDTG1232G-08 |
|
Hersteller: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; Gull wing; green; 7100÷16000mcd; 2.3x2.3x2.8mm; 9°; 20mA
Type of diode: LED
Mounting: SMD
Case: Gull wing
LED colour: green
Luminosity: 7100...16000mcd
Dimensions: 2.3x2.3x2.8mm
Viewing angle: 9°
LED current: 20mA
Wavelength: 515...541nm
Front: convex
Operating voltage: 2.6...3.4V
Category: SMD colour LEDs
Description: LED; SMD; Gull wing; green; 7100÷16000mcd; 2.3x2.3x2.8mm; 9°; 20mA
Type of diode: LED
Mounting: SMD
Case: Gull wing
LED colour: green
Luminosity: 7100...16000mcd
Dimensions: 2.3x2.3x2.8mm
Viewing angle: 9°
LED current: 20mA
Wavelength: 515...541nm
Front: convex
Operating voltage: 2.6...3.4V
Produkt ist nicht verfügbar
| VLDTG1232R-08 |
|
Hersteller: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; Gull wing; green; 7100÷16000mcd; 2.3x2.3x2.8mm; 9°; 20mA
Type of diode: LED
Mounting: SMD
Case: Gull wing
LED colour: green
Luminosity: 7100...16000mcd
Dimensions: 2.3x2.3x2.8mm
Viewing angle: 9°
LED current: 20mA
Wavelength: 515...541nm
LED version: reverse mount
Front: convex
Operating voltage: 2.6...3.4V
Category: SMD colour LEDs
Description: LED; SMD; Gull wing; green; 7100÷16000mcd; 2.3x2.3x2.8mm; 9°; 20mA
Type of diode: LED
Mounting: SMD
Case: Gull wing
LED colour: green
Luminosity: 7100...16000mcd
Dimensions: 2.3x2.3x2.8mm
Viewing angle: 9°
LED current: 20mA
Wavelength: 515...541nm
LED version: reverse mount
Front: convex
Operating voltage: 2.6...3.4V
Produkt ist nicht verfügbar
| VEMD5160X01 |
|
Hersteller: VISHAY
Category: Photodiodes
Description: PIN photodiode; SMD; 840nm; 700÷1070nm; 65°; flat; black
Mounting: SMD
Wavelength: 700...1070nm
LED lens: black
Viewing angle: 65°
Type of photoelement: PIN photodiode
Wavelength of peak sensitivity: 840nm
Active area: 7.5mm2
Dimensions: 5x4x0.9mm
Front: flat
Category: Photodiodes
Description: PIN photodiode; SMD; 840nm; 700÷1070nm; 65°; flat; black
Mounting: SMD
Wavelength: 700...1070nm
LED lens: black
Viewing angle: 65°
Type of photoelement: PIN photodiode
Wavelength of peak sensitivity: 840nm
Active area: 7.5mm2
Dimensions: 5x4x0.9mm
Front: flat
Produkt ist nicht verfügbar