| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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WKO221MCPCF0KR | VISHAY |
 Category: THT ceramic capacitorsDescription: Capacitor: ceramic; suppression capacitor,X1,Y2; 220pF; Y5T; ±20% Type of capacitor: ceramic Kind of capacitor: suppression capacitor; X1; Y2 Capacitance: 220pF Dielectric: Y5T Tolerance: ±20% Mounting: THT Terminal pitch: 7.5mm Operating voltage X class: 440V AC Operating voltage Y class: 300V AC |
Produkt ist nicht verfügbar |
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WKO222MCPCJ0KR | VISHAY |
Category: THT ceramic capacitors Description: Capacitor: ceramic; suppression capacitor,X1,Y2; 2.2nF; Y5U; ±20% Type of capacitor: ceramic Kind of capacitor: suppression capacitor; X1; Y2 Capacitance: 2.2nF Dielectric: Y5U Tolerance: ±20% Mounting: THT Terminal pitch: 7.5mm Operating voltage X class: 440V AC Operating voltage Y class: 300V AC |
auf Bestellung 2437 Stücke: Lieferzeit 14-21 Tag (e) |
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GBU4D-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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GBU4D-E3/51 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: in-tray Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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MBB02070C1623FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 162kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 162kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
Produkt ist nicht verfügbar |
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VJ0402Y103KXJCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 10nF; 16V; X7R; ±10%; SMD; 0402 Type of capacitor: ceramic Capacitance: 10nF Operating voltage: 16V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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VJ0603Y103KXJCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 10nF; 16V; X7R; ±10%; SMD; 0603 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 10nF Operating voltage: 16V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
auf Bestellung 16494 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW12063K01FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 3.01kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 3.01kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
auf Bestellung 5600 Stücke: Lieferzeit 14-21 Tag (e) |
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RCA0603680KFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 680kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 680kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC Q200 |
Produkt ist nicht verfügbar |
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TSHG6410 | VISHAY |
Category: IR LEDs Description: IR transmitter; 5mm; 875nm; transparent; 65mW; 12°; THT Mounting: THT LED diameter: 5mm Type of diode: IR transmitter Wavelength: 875nm LED lens: transparent Viewing angle: 12° Optical power: 65mW |
auf Bestellung 3409 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-16FL100S05 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1kV; 1.5V; 16A; cathode to stud; DO203AA; bulk Type of diode: rectifying Max. off-state voltage: 1kV Max. forward voltage: 1.5V Load current: 16A Max. load current: 25A Semiconductor structure: cathode to stud Case: DO203AA Fastening thread: 10-32UNF-2A Mounting: screw type Features of semiconductor devices: fast switching Max. forward impulse current: 180A Kind of package: bulk Reverse recovery time: 0.5µs |
Produkt ist nicht verfügbar |
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| VS-240U100D | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1kV; 1.33V; 320A; cathode to stud; DO205AB; bulk Type of diode: rectifying Max. off-state voltage: 1kV Max. forward voltage: 1.33V Load current: 320A Max. load current: 500A Semiconductor structure: cathode to stud Case: DO205AB Fastening thread: 3/4"-16UNF-2A Mounting: screw type Max. forward impulse current: 4.5kA Kind of package: bulk |
Produkt ist nicht verfügbar |
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| VS-240UR100D | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1kV; 1.33V; 320A; anode to stud; DO205AB; bulk Type of diode: rectifying Max. off-state voltage: 1kV Max. forward voltage: 1.33V Load current: 320A Max. load current: 500A Semiconductor structure: anode to stud Case: DO205AB Fastening thread: 3/4"-16UNF-2A Mounting: screw type Max. forward impulse current: 4.5kA Kind of package: bulk |
Produkt ist nicht verfügbar |
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VS-70HF100 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1kV; 1.35V; 70A; cathode to stud; DO203AB; bulk Type of diode: rectifying Max. off-state voltage: 1kV Max. forward voltage: 1.35V Load current: 70A Max. load current: 110A Semiconductor structure: cathode to stud Case: DO203AB Fastening thread: 1/4"-28UNF-2A Mounting: screw type Max. forward impulse current: 1kA Kind of package: bulk |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-70HFR100 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1kV; 1.35V; 70A; anode to stud; DO203AB; bulk Type of diode: rectifying Max. off-state voltage: 1kV Max. forward voltage: 1.35V Load current: 70A Max. load current: 110A Semiconductor structure: anode to stud Case: DO203AB Fastening thread: 1/4"-28UNF-2A Mounting: screw type Max. forward impulse current: 1kA Kind of package: bulk |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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| VS-85HFR100 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1kV; 1.2V; 85A; anode to stud; DO203AB; bulk Type of diode: rectifying Max. off-state voltage: 1kV Max. forward voltage: 1.2V Load current: 85A Max. load current: 133A Semiconductor structure: anode to stud Case: DO203AB Fastening thread: 1/4"-28UNF-2A Mounting: screw type Max. forward impulse current: 1.7kA Kind of package: bulk |
Produkt ist nicht verfügbar |
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CRCW12061K24FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 1.24kΩ; 0.25W; ±1%; -55÷155°C Resistance: 1.24kΩ Power: 0.25W Mounting: SMD Tolerance: ±1% Operating temperature: -55...155°C Max. operating voltage: 200V Case - mm: 3216 Case - inch: 1206 Type of resistor: thick film |
auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW12061K27FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 1.27kΩ; 0.25W; ±1%; -55÷155°C Resistance: 1.27kΩ Power: 0.25W Mounting: SMD Tolerance: ±1% Operating temperature: -55...155°C Max. operating voltage: 200V Case - mm: 3216 Case - inch: 1206 Type of resistor: thick film |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| 4N25-X009T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 50%@10mA Collector-emitter voltage: 70V Case: SMD6 Conform to the norm: UL Turn-on time: 2µs Turn-off time: 2µs Max. off-state voltage: 6V Manufacturer series: 4N25 |
Produkt ist nicht verfügbar |
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| SIHP052N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 148A Power dissipation: 278W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 52mΩ Mounting: THT Gate charge: 101nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHP120N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 66A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHP186N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 43A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 43A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 193mΩ Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHP24N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Pulsed drain current: 51A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 89nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 998 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHP24N80AEF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 46A; 208W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 20A Pulsed drain current: 46A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.195Ω Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIR5102DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 110A; Idm: 300A Drain-source voltage: 100V Drain current: 110A On-state resistance: 5.6mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: reel; tape Gate charge: 51nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A Mounting: SMD Case: PowerPAK® SO8 |
Produkt ist nicht verfügbar |
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| SIR510DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A Drain-source voltage: 100V Drain current: 126A On-state resistance: 4.2mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: reel; tape Gate charge: 81nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A Mounting: SMD Case: PowerPAK® SO8 |
Produkt ist nicht verfügbar |
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| SIHA2N80E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 29W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Drain-source voltage: 800V Drain current: 1.8A On-state resistance: 2.75Ω Type of transistor: N-MOSFET Power dissipation: 29W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 5A Gate charge: 19.6nC |
Produkt ist nicht verfügbar |
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SIHD2N80AE-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.8A Pulsed drain current: 3.6A Power dissipation: 62.5W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 10.5nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHD2N80E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 800V Drain current: 1.8A On-state resistance: 2.75Ω Type of transistor: N-MOSFET Power dissipation: 62.5W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 5A Gate charge: 19.6nC |
Produkt ist nicht verfügbar |
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SA18A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 20÷22.1V; 17.1A; unidirectional; DO15; Ammo Pack Kind of package: Ammo Pack Type of diode: TVS Features of semiconductor devices: glass passivated Technology: TransZorb® Peak pulse power dissipation: 0.5kW Mounting: THT Case: DO15 Max. off-state voltage: 18V Semiconductor structure: unidirectional Max. forward impulse current: 17.1A Breakdown voltage: 20...22.1V Leakage current: 1µA |
Produkt ist nicht verfügbar |
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SA30A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 33.3÷36.8V; 10A; unidirectional; DO15; Ammo Pack Type of diode: TVS Mounting: THT Max. off-state voltage: 30V Semiconductor structure: unidirectional Features of semiconductor devices: glass passivated Kind of package: Ammo Pack Max. forward impulse current: 10A Case: DO15 Leakage current: 1µA Technology: TransZorb® Peak pulse power dissipation: 0.5kW Breakdown voltage: 33.3...36.8V |
Produkt ist nicht verfügbar |
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SA33A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 36.7÷40.6V; 9.4A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 9.4A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 33V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 36.7...40.6V |
Produkt ist nicht verfügbar |
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SA36A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 40÷44.2V; 8.6A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 8.6A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 36V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 40...44.2V |
Produkt ist nicht verfügbar |
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SA43A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 47.8÷52.8V; 7.2A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 7.2A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 43V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 47.8...52.8V |
Produkt ist nicht verfügbar |
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SA45A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 50÷55.3V; 6.9A; unidirectional; DO15; Ammo Pack Type of diode: TVS Max. off-state voltage: 45V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Features of semiconductor devices: glass passivated Max. forward impulse current: 6.9A Kind of package: Ammo Pack Leakage current: 1µA Technology: TransZorb® Peak pulse power dissipation: 0.5kW Breakdown voltage: 50...55.3V |
Produkt ist nicht verfügbar |
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SA48A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 53.3÷58.9V; 6.5A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 6.5A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 48V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 53.3...58.9V |
Produkt ist nicht verfügbar |
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SA51A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 56.7÷62.7V; 6.1A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 6.1A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 51V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 56.7...62.7V |
Produkt ist nicht verfügbar |
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SA54A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 60÷66.3V; 5.7A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 5.7A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 54V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 60...66.3V |
Produkt ist nicht verfügbar |
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SA58A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 64.4÷71.2V; 5.3A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 5.3A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 58V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 64.4...71.2V |
Produkt ist nicht verfügbar |
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SA70A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 77.8÷86V; 4.4A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 4.4A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 70V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 77.8...86V |
Produkt ist nicht verfügbar |
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SA75A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 83.3÷92.1V; 4.1A; unidirectional; DO15; Ammo Pack Type of diode: TVS Max. off-state voltage: 75V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Features of semiconductor devices: glass passivated Max. forward impulse current: 4.1A Kind of package: Ammo Pack Leakage current: 1µA Technology: TransZorb® Peak pulse power dissipation: 0.5kW Breakdown voltage: 83.3...92.1V |
Produkt ist nicht verfügbar |
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SA78A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 86.7÷95.8V; 4A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 4A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 78V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 86.7...95.8V |
Produkt ist nicht verfügbar |
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SA85A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 94.4÷104V; 3.6A; unidirectional; DO15; Ammo Pack Type of diode: TVS Max. off-state voltage: 85V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Features of semiconductor devices: glass passivated Max. forward impulse current: 3.6A Kind of package: Ammo Pack Leakage current: 1µA Technology: TransZorb® Peak pulse power dissipation: 0.5kW Breakdown voltage: 94.4...104V |
Produkt ist nicht verfügbar |
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SA90A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 100÷111V; 3.4A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 3.4A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 90V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 100...111V |
Produkt ist nicht verfügbar |
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SA7.0A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 7.78÷8.6V; 41.7A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 41.7A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 7V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 0.15mA Case: DO15 Type of diode: TVS Breakdown voltage: 7.78...8.6V |
Produkt ist nicht verfügbar |
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SA8.0A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 8.89÷9.83V; 36.8A; unidirectional; DO15 Mounting: THT Max. forward impulse current: 36.8A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 8V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 25µA Case: DO15 Type of diode: TVS Breakdown voltage: 8.89...9.83V |
Produkt ist nicht verfügbar |
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SA8.5A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 9.44÷10.4V; 34.7A; unidirectional; DO15 Mounting: THT Max. forward impulse current: 34.7A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 8.5V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 10µA Case: DO15 Type of diode: TVS Breakdown voltage: 9.44...10.4V |
Produkt ist nicht verfügbar |
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SA9.0A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 10÷11.1V; 32.5A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 32.5A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 9V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 5µA Case: DO15 Type of diode: TVS Breakdown voltage: 10...11.1V |
Produkt ist nicht verfügbar |
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P6KE7.5A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 600W; 7.5V; 53.1A; unidirectional; DO15; Ammo Pack; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6.4V Breakdown voltage: 7.5V Max. forward impulse current: 53.1A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 0.5mA Kind of package: Ammo Pack Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6KE |
auf Bestellung 1043 Stücke: Lieferzeit 14-21 Tag (e) |
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SA90CA-E3/73 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 100÷111V; 3.4A; bidirectional; DO15; 500W; Ammo Pack Mounting: THT Max. forward impulse current: 3.4A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 90V Kind of package: Ammo Pack Semiconductor structure: bidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 100...111V |
Produkt ist nicht verfügbar |
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SA30CA-E3/73 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 33.3÷36.8V; 10A; bidirectional; DO15; 500W; Ammo Pack Mounting: THT Max. forward impulse current: 10A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 30V Kind of package: Ammo Pack Semiconductor structure: bidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 33.3...36.8V |
Produkt ist nicht verfügbar |
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| AC10000001202JAB00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 12kΩ; 10W; ±5%; Ø8x44mm; axial Type of resistor: wire-wound Mounting: THT Resistance: 12kΩ Power: 10W Tolerance: ±5% Body dimensions: Ø8x44mm Leads: axial Conform to the norm: AEC Q200 |
Produkt ist nicht verfügbar |
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RCA060312K0FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 12kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 12kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC Q200 |
Produkt ist nicht verfügbar |
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MBB02070C1202FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 12kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 12kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
auf Bestellung 780 Stücke: Lieferzeit 14-21 Tag (e) |
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MBB02070C4020FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 402Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 402Ω Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
auf Bestellung 1450 Stücke: Lieferzeit 14-21 Tag (e) |
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SMM02040D4020BB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 402Ω; 0.4W; ±0.1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 402Ω Power: 0.4W Tolerance: ±0.1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 25ppm/°C |
Produkt ist nicht verfügbar |
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| 6N139-X007 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5.3kV; SMD8; 6N139 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Darlington Insulation voltage: 5.3kV CTR@If: 500-2000%@1.6mA Case: SMD8 Conform to the norm: UL Turn-on time: 4µs Turn-off time: 6µs Slew rate: 500V/μs Max. off-state voltage: 5V Output voltage: -5...18V Manufacturer series: 6N139 |
Produkt ist nicht verfügbar |
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| MRS25000C1600FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 160Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 160Ω Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
Produkt ist nicht verfügbar |
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CRCW08052K43FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 2.43kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 2.43kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI3499DV-T1-BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -7A; Idm: -20A; 2W Mounting: SMD Case: TSOP6 Kind of package: reel; tape Polarisation: unipolar Gate charge: 42nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -20A Power dissipation: 2W Drain-source voltage: -8V Drain current: -7A On-state resistance: 48mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
| WKO221MCPCF0KR |
|
Hersteller: VISHAY
Category: THT ceramic capacitors
Description: Capacitor: ceramic; suppression capacitor,X1,Y2; 220pF; Y5T; ±20%
Type of capacitor: ceramic
Kind of capacitor: suppression capacitor; X1; Y2
Capacitance: 220pF
Dielectric: Y5T
Tolerance: ±20%
Mounting: THT
Terminal pitch: 7.5mm
Operating voltage X class: 440V AC
Operating voltage Y class: 300V AC
Category: THT ceramic capacitors
Description: Capacitor: ceramic; suppression capacitor,X1,Y2; 220pF; Y5T; ±20%
Type of capacitor: ceramic
Kind of capacitor: suppression capacitor; X1; Y2
Capacitance: 220pF
Dielectric: Y5T
Tolerance: ±20%
Mounting: THT
Terminal pitch: 7.5mm
Operating voltage X class: 440V AC
Operating voltage Y class: 300V AC
Produkt ist nicht verfügbar
| WKO222MCPCJ0KR |
|
Hersteller: VISHAY
Category: THT ceramic capacitors
Description: Capacitor: ceramic; suppression capacitor,X1,Y2; 2.2nF; Y5U; ±20%
Type of capacitor: ceramic
Kind of capacitor: suppression capacitor; X1; Y2
Capacitance: 2.2nF
Dielectric: Y5U
Tolerance: ±20%
Mounting: THT
Terminal pitch: 7.5mm
Operating voltage X class: 440V AC
Operating voltage Y class: 300V AC
Category: THT ceramic capacitors
Description: Capacitor: ceramic; suppression capacitor,X1,Y2; 2.2nF; Y5U; ±20%
Type of capacitor: ceramic
Kind of capacitor: suppression capacitor; X1; Y2
Capacitance: 2.2nF
Dielectric: Y5U
Tolerance: ±20%
Mounting: THT
Terminal pitch: 7.5mm
Operating voltage X class: 440V AC
Operating voltage Y class: 300V AC
auf Bestellung 2437 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 194+ | 0.37 EUR |
| 239+ | 0.3 EUR |
| 304+ | 0.24 EUR |
| 319+ | 0.22 EUR |
| GBU4D-E3/45 |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| GBU4D-E3/51 |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| MBB02070C1623FC100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 162kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 162kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 162kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 162kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Produkt ist nicht verfügbar
| VJ0402Y103KXJCW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 16V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 16V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ0603Y103KXJCW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10nF; 16V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 10nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10nF; 16V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 10nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 16494 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4900+ | 0.015 EUR |
| 7100+ | 0.01 EUR |
| 11100+ | 0.0065 EUR |
| 12200+ | 0.0059 EUR |
| 12900+ | 0.0055 EUR |
| CRCW12063K01FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3.01kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3.01kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3.01kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3.01kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
auf Bestellung 5600 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1800+ | 0.042 EUR |
| 3000+ | 0.025 EUR |
| 4600+ | 0.016 EUR |
| 5600+ | 0.013 EUR |
| RCA0603680KFKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 680kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 680kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 680kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 680kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Produkt ist nicht verfügbar
| TSHG6410 |
|
Hersteller: VISHAY
Category: IR LEDs
Description: IR transmitter; 5mm; 875nm; transparent; 65mW; 12°; THT
Mounting: THT
LED diameter: 5mm
Type of diode: IR transmitter
Wavelength: 875nm
LED lens: transparent
Viewing angle: 12°
Optical power: 65mW
Category: IR LEDs
Description: IR transmitter; 5mm; 875nm; transparent; 65mW; 12°; THT
Mounting: THT
LED diameter: 5mm
Type of diode: IR transmitter
Wavelength: 875nm
LED lens: transparent
Viewing angle: 12°
Optical power: 65mW
auf Bestellung 3409 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 79+ | 0.92 EUR |
| 124+ | 0.58 EUR |
| 184+ | 0.39 EUR |
| 319+ | 0.22 EUR |
| 338+ | 0.21 EUR |
| VS-16FL100S05 |
|
Hersteller: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.5V; 16A; cathode to stud; DO203AA; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.5V
Load current: 16A
Max. load current: 25A
Semiconductor structure: cathode to stud
Case: DO203AA
Fastening thread: 10-32UNF-2A
Mounting: screw type
Features of semiconductor devices: fast switching
Max. forward impulse current: 180A
Kind of package: bulk
Reverse recovery time: 0.5µs
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.5V; 16A; cathode to stud; DO203AA; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.5V
Load current: 16A
Max. load current: 25A
Semiconductor structure: cathode to stud
Case: DO203AA
Fastening thread: 10-32UNF-2A
Mounting: screw type
Features of semiconductor devices: fast switching
Max. forward impulse current: 180A
Kind of package: bulk
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
| VS-240U100D |
|
Hersteller: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.33V; 320A; cathode to stud; DO205AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.33V
Load current: 320A
Max. load current: 500A
Semiconductor structure: cathode to stud
Case: DO205AB
Fastening thread: 3/4"-16UNF-2A
Mounting: screw type
Max. forward impulse current: 4.5kA
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.33V; 320A; cathode to stud; DO205AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.33V
Load current: 320A
Max. load current: 500A
Semiconductor structure: cathode to stud
Case: DO205AB
Fastening thread: 3/4"-16UNF-2A
Mounting: screw type
Max. forward impulse current: 4.5kA
Kind of package: bulk
Produkt ist nicht verfügbar
| VS-240UR100D |
|
Hersteller: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.33V; 320A; anode to stud; DO205AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.33V
Load current: 320A
Max. load current: 500A
Semiconductor structure: anode to stud
Case: DO205AB
Fastening thread: 3/4"-16UNF-2A
Mounting: screw type
Max. forward impulse current: 4.5kA
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.33V; 320A; anode to stud; DO205AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.33V
Load current: 320A
Max. load current: 500A
Semiconductor structure: anode to stud
Case: DO205AB
Fastening thread: 3/4"-16UNF-2A
Mounting: screw type
Max. forward impulse current: 4.5kA
Kind of package: bulk
Produkt ist nicht verfügbar
| VS-70HF100 |
|
Hersteller: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.35V; 70A; cathode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.35V
Load current: 70A
Max. load current: 110A
Semiconductor structure: cathode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1kA
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.35V; 70A; cathode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.35V
Load current: 70A
Max. load current: 110A
Semiconductor structure: cathode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1kA
Kind of package: bulk
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 11.33 EUR |
| 9+ | 8.24 EUR |
| 10+ | 7.79 EUR |
| VS-70HFR100 |
|
Hersteller: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.35V; 70A; anode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.35V
Load current: 70A
Max. load current: 110A
Semiconductor structure: anode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1kA
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.35V; 70A; anode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.35V
Load current: 70A
Max. load current: 110A
Semiconductor structure: anode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1kA
Kind of package: bulk
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 9.87 EUR |
| 10+ | 7.26 EUR |
| VS-85HFR100 |
|
Hersteller: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.2V; 85A; anode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.2V
Load current: 85A
Max. load current: 133A
Semiconductor structure: anode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1.7kA
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.2V; 85A; anode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.2V
Load current: 85A
Max. load current: 133A
Semiconductor structure: anode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1.7kA
Kind of package: bulk
Produkt ist nicht verfügbar
| CRCW12061K24FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.24kΩ; 0.25W; ±1%; -55÷155°C
Resistance: 1.24kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±1%
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - mm: 3216
Case - inch: 1206
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.24kΩ; 0.25W; ±1%; -55÷155°C
Resistance: 1.24kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±1%
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - mm: 3216
Case - inch: 1206
Type of resistor: thick film
auf Bestellung 1700 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1700+ | 0.041 EUR |
| CRCW12061K27FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.27kΩ; 0.25W; ±1%; -55÷155°C
Resistance: 1.27kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±1%
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - mm: 3216
Case - inch: 1206
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.27kΩ; 0.25W; ±1%; -55÷155°C
Resistance: 1.27kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±1%
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - mm: 3216
Case - inch: 1206
Type of resistor: thick film
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 100+ | 0.72 EUR |
| 4N25-X009T |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 50%@10mA
Collector-emitter voltage: 70V
Case: SMD6
Conform to the norm: UL
Turn-on time: 2µs
Turn-off time: 2µs
Max. off-state voltage: 6V
Manufacturer series: 4N25
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 50%@10mA
Collector-emitter voltage: 70V
Case: SMD6
Conform to the norm: UL
Turn-on time: 2µs
Turn-off time: 2µs
Max. off-state voltage: 6V
Manufacturer series: 4N25
Produkt ist nicht verfügbar
| SIHP052N60EF-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 148A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 101nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 148A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 101nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHP120N60E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 66A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 66A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHP186N60EF-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 43A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 43A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 193mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 43A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 43A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 193mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHP24N80AE-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 51A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 51A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 998 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 4.19 EUR |
| 20+ | 3.7 EUR |
| 23+ | 3.15 EUR |
| 25+ | 2.97 EUR |
| 500+ | 2.89 EUR |
| SIHP24N80AEF-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 46A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Pulsed drain current: 46A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 46A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Pulsed drain current: 46A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIR5102DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 110A; Idm: 300A
Drain-source voltage: 100V
Drain current: 110A
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 51nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Case: PowerPAK® SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 110A; Idm: 300A
Drain-source voltage: 100V
Drain current: 110A
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 51nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Case: PowerPAK® SO8
Produkt ist nicht verfügbar
| SIR510DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A
Drain-source voltage: 100V
Drain current: 126A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 81nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Case: PowerPAK® SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A
Drain-source voltage: 100V
Drain current: 126A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 81nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Case: PowerPAK® SO8
Produkt ist nicht verfügbar
| SIHA2N80E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 29W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 800V
Drain current: 1.8A
On-state resistance: 2.75Ω
Type of transistor: N-MOSFET
Power dissipation: 29W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 5A
Gate charge: 19.6nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 29W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 800V
Drain current: 1.8A
On-state resistance: 2.75Ω
Type of transistor: N-MOSFET
Power dissipation: 29W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 5A
Gate charge: 19.6nC
Produkt ist nicht verfügbar
| SIHD2N80AE-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.8A
Pulsed drain current: 3.6A
Power dissipation: 62.5W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.8A
Pulsed drain current: 3.6A
Power dissipation: 62.5W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 2.97 EUR |
| SIHD2N80E-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 800V
Drain current: 1.8A
On-state resistance: 2.75Ω
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 5A
Gate charge: 19.6nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 800V
Drain current: 1.8A
On-state resistance: 2.75Ω
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 5A
Gate charge: 19.6nC
Produkt ist nicht verfügbar
| SA18A-E3/73 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 20÷22.1V; 17.1A; unidirectional; DO15; Ammo Pack
Kind of package: Ammo Pack
Type of diode: TVS
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Mounting: THT
Case: DO15
Max. off-state voltage: 18V
Semiconductor structure: unidirectional
Max. forward impulse current: 17.1A
Breakdown voltage: 20...22.1V
Leakage current: 1µA
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 20÷22.1V; 17.1A; unidirectional; DO15; Ammo Pack
Kind of package: Ammo Pack
Type of diode: TVS
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Mounting: THT
Case: DO15
Max. off-state voltage: 18V
Semiconductor structure: unidirectional
Max. forward impulse current: 17.1A
Breakdown voltage: 20...22.1V
Leakage current: 1µA
Produkt ist nicht verfügbar
| SA30A-E3/73 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 33.3÷36.8V; 10A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Mounting: THT
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 10A
Case: DO15
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Breakdown voltage: 33.3...36.8V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 33.3÷36.8V; 10A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Mounting: THT
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 10A
Case: DO15
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Breakdown voltage: 33.3...36.8V
Produkt ist nicht verfügbar
| SA33A-E3/73 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 36.7÷40.6V; 9.4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 9.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 33V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 36.7...40.6V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 36.7÷40.6V; 9.4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 9.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 33V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 36.7...40.6V
Produkt ist nicht verfügbar
| SA36A-E3/73 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 40÷44.2V; 8.6A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 8.6A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 36V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 40...44.2V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 40÷44.2V; 8.6A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 8.6A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 36V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 40...44.2V
Produkt ist nicht verfügbar
| SA43A-E3/73 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 47.8÷52.8V; 7.2A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 7.2A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 43V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 47.8...52.8V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 47.8÷52.8V; 7.2A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 7.2A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 43V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 47.8...52.8V
Produkt ist nicht verfügbar
| SA45A-E3/73 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 50÷55.3V; 6.9A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 45V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Features of semiconductor devices: glass passivated
Max. forward impulse current: 6.9A
Kind of package: Ammo Pack
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Breakdown voltage: 50...55.3V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 50÷55.3V; 6.9A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 45V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Features of semiconductor devices: glass passivated
Max. forward impulse current: 6.9A
Kind of package: Ammo Pack
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Breakdown voltage: 50...55.3V
Produkt ist nicht verfügbar
| SA48A-E3/73 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 53.3÷58.9V; 6.5A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 6.5A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 48V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 53.3...58.9V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 53.3÷58.9V; 6.5A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 6.5A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 48V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 53.3...58.9V
Produkt ist nicht verfügbar
| SA51A-E3/73 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 56.7÷62.7V; 6.1A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 6.1A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 51V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 56.7...62.7V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 56.7÷62.7V; 6.1A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 6.1A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 51V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 56.7...62.7V
Produkt ist nicht verfügbar
| SA54A-E3/73 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 60÷66.3V; 5.7A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 5.7A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 54V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 60...66.3V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 60÷66.3V; 5.7A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 5.7A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 54V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 60...66.3V
Produkt ist nicht verfügbar
| SA58A-E3/73 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 64.4÷71.2V; 5.3A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 5.3A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 58V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 64.4...71.2V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 64.4÷71.2V; 5.3A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 5.3A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 58V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 64.4...71.2V
Produkt ist nicht verfügbar
| SA70A-E3/73 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 77.8÷86V; 4.4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 4.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 70V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 77.8...86V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 77.8÷86V; 4.4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 4.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 70V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 77.8...86V
Produkt ist nicht verfügbar
| SA75A-E3/73 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 83.3÷92.1V; 4.1A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 75V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Features of semiconductor devices: glass passivated
Max. forward impulse current: 4.1A
Kind of package: Ammo Pack
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Breakdown voltage: 83.3...92.1V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 83.3÷92.1V; 4.1A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 75V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Features of semiconductor devices: glass passivated
Max. forward impulse current: 4.1A
Kind of package: Ammo Pack
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Breakdown voltage: 83.3...92.1V
Produkt ist nicht verfügbar
| SA78A-E3/73 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 86.7÷95.8V; 4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 78V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 86.7...95.8V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 86.7÷95.8V; 4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 78V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 86.7...95.8V
Produkt ist nicht verfügbar
| SA85A-E3/73 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 94.4÷104V; 3.6A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 85V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Features of semiconductor devices: glass passivated
Max. forward impulse current: 3.6A
Kind of package: Ammo Pack
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Breakdown voltage: 94.4...104V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 94.4÷104V; 3.6A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 85V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Features of semiconductor devices: glass passivated
Max. forward impulse current: 3.6A
Kind of package: Ammo Pack
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Breakdown voltage: 94.4...104V
Produkt ist nicht verfügbar
| SA90A-E3/73 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 100÷111V; 3.4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 3.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 90V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 100...111V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 100÷111V; 3.4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 3.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 90V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 100...111V
Produkt ist nicht verfügbar
| SA7.0A-E3/73 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 7.78÷8.6V; 41.7A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 41.7A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 7V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 0.15mA
Case: DO15
Type of diode: TVS
Breakdown voltage: 7.78...8.6V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 7.78÷8.6V; 41.7A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 41.7A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 7V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 0.15mA
Case: DO15
Type of diode: TVS
Breakdown voltage: 7.78...8.6V
Produkt ist nicht verfügbar
| SA8.0A-E3/73 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 8.89÷9.83V; 36.8A; unidirectional; DO15
Mounting: THT
Max. forward impulse current: 36.8A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 8V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 25µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 8.89...9.83V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 8.89÷9.83V; 36.8A; unidirectional; DO15
Mounting: THT
Max. forward impulse current: 36.8A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 8V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 25µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 8.89...9.83V
Produkt ist nicht verfügbar
| SA8.5A-E3/73 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 9.44÷10.4V; 34.7A; unidirectional; DO15
Mounting: THT
Max. forward impulse current: 34.7A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 8.5V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 10µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 9.44...10.4V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 9.44÷10.4V; 34.7A; unidirectional; DO15
Mounting: THT
Max. forward impulse current: 34.7A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 8.5V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 10µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 9.44...10.4V
Produkt ist nicht verfügbar
| SA9.0A-E3/73 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 10÷11.1V; 32.5A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 32.5A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 9V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 10...11.1V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 10÷11.1V; 32.5A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 32.5A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 9V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 10...11.1V
Produkt ist nicht verfügbar
| P6KE7.5A-E3/73 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 600W; 7.5V; 53.1A; unidirectional; DO15; Ammo Pack; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.4V
Breakdown voltage: 7.5V
Max. forward impulse current: 53.1A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.5mA
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6KE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 600W; 7.5V; 53.1A; unidirectional; DO15; Ammo Pack; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.4V
Breakdown voltage: 7.5V
Max. forward impulse current: 53.1A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.5mA
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6KE
auf Bestellung 1043 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 162+ | 0.44 EUR |
| 298+ | 0.24 EUR |
| 386+ | 0.19 EUR |
| 408+ | 0.18 EUR |
| SA90CA-E3/73 |
|
Hersteller: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 100÷111V; 3.4A; bidirectional; DO15; 500W; Ammo Pack
Mounting: THT
Max. forward impulse current: 3.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 90V
Kind of package: Ammo Pack
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 100...111V
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 100÷111V; 3.4A; bidirectional; DO15; 500W; Ammo Pack
Mounting: THT
Max. forward impulse current: 3.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 90V
Kind of package: Ammo Pack
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 100...111V
Produkt ist nicht verfügbar
| SA30CA-E3/73 |
|
Hersteller: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 33.3÷36.8V; 10A; bidirectional; DO15; 500W; Ammo Pack
Mounting: THT
Max. forward impulse current: 10A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 30V
Kind of package: Ammo Pack
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 33.3...36.8V
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 33.3÷36.8V; 10A; bidirectional; DO15; 500W; Ammo Pack
Mounting: THT
Max. forward impulse current: 10A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 30V
Kind of package: Ammo Pack
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 33.3...36.8V
Produkt ist nicht verfügbar
| AC10000001202JAB00 |
|
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 12kΩ; 10W; ±5%; Ø8x44mm; axial
Type of resistor: wire-wound
Mounting: THT
Resistance: 12kΩ
Power: 10W
Tolerance: ±5%
Body dimensions: Ø8x44mm
Leads: axial
Conform to the norm: AEC Q200
Category: Power resistors
Description: Resistor: wire-wound; THT; 12kΩ; 10W; ±5%; Ø8x44mm; axial
Type of resistor: wire-wound
Mounting: THT
Resistance: 12kΩ
Power: 10W
Tolerance: ±5%
Body dimensions: Ø8x44mm
Leads: axial
Conform to the norm: AEC Q200
Produkt ist nicht verfügbar
| RCA060312K0FKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 12kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 12kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 12kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 12kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Produkt ist nicht verfügbar
| MBB02070C1202FC100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 12kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 12kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 12kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 12kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
auf Bestellung 780 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 417+ | 0.17 EUR |
| 463+ | 0.15 EUR |
| 578+ | 0.12 EUR |
| 649+ | 0.11 EUR |
| 780+ | 0.092 EUR |
| MBB02070C4020FC100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 402Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 402Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 402Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 402Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
auf Bestellung 1450 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 330+ | 0.22 EUR |
| 850+ | 0.084 EUR |
| 1000+ | 0.076 EUR |
| SMM02040D4020BB300 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 402Ω; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 402Ω
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 402Ω; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 402Ω
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Produkt ist nicht verfügbar
| 6N139-X007 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5.3kV; SMD8; 6N139
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5.3kV
CTR@If: 500-2000%@1.6mA
Case: SMD8
Conform to the norm: UL
Turn-on time: 4µs
Turn-off time: 6µs
Slew rate: 500V/μs
Max. off-state voltage: 5V
Output voltage: -5...18V
Manufacturer series: 6N139
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5.3kV; SMD8; 6N139
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5.3kV
CTR@If: 500-2000%@1.6mA
Case: SMD8
Conform to the norm: UL
Turn-on time: 4µs
Turn-off time: 6µs
Slew rate: 500V/μs
Max. off-state voltage: 5V
Output voltage: -5...18V
Manufacturer series: 6N139
Produkt ist nicht verfügbar
| MRS25000C1600FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 160Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 160Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 160Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 160Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Produkt ist nicht verfügbar
| CRCW08052K43FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 2.43kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 2.43kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 2.43kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 2.43kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.036 EUR |
| 3800+ | 0.019 EUR |
| 6200+ | 0.012 EUR |
| 8000+ | 0.0089 EUR |
| SI3499DV-T1-BE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -7A; Idm: -20A; 2W
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -20A
Power dissipation: 2W
Drain-source voltage: -8V
Drain current: -7A
On-state resistance: 48mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -7A; Idm: -20A; 2W
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -20A
Power dissipation: 2W
Drain-source voltage: -8V
Drain current: -7A
On-state resistance: 48mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar