Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (10970) > Seite 32 nach 183
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SI5935DC-T1-E3 | Vishay Siliconix |
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SI5938DU-T1-E3 | Vishay Siliconix |
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SI5943DU-T1-E3 | Vishay Siliconix |
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SI5944DU-T1-E3 | Vishay Siliconix |
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SI5947DU-T1-E3 | Vishay Siliconix |
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Si6410DQ-T1-E3 | Vishay Siliconix |
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SI6415DQ-T1-E3 | Vishay Siliconix |
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auf Bestellung 5532 Stücke: Lieferzeit 10-14 Tag (e) |
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SI6423DQ-T1-E3 | Vishay Siliconix |
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SI6433BDQ-T1-E3 | Vishay Siliconix |
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Si6435ADQ-T1-E3 | Vishay Siliconix |
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SI6459BDQ-T1-E3 | Vishay Siliconix |
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SI6463BDQ-T1-E3 | Vishay Siliconix |
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SI6467BDQ-T1-E3 | Vishay Siliconix |
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SI6544BDQ-T1-E3 | Vishay Siliconix |
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Si6562DQ-T1-E3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 8-TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Supplier Device Package: 8-TSSOP |
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SI6913DQ-T1-E3 | Vishay Siliconix |
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auf Bestellung 2133 Stücke: Lieferzeit 10-14 Tag (e) |
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SI6924AEDQ-T1-E3 | Vishay Siliconix |
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SI6925ADQ-T1-E3 | Vishay Siliconix |
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SI6926ADQ-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.1A Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-TSSOP Part Status: Active |
auf Bestellung 4810 Stücke: Lieferzeit 10-14 Tag (e) |
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Si6928DQ-T1-E3 | Vishay Siliconix |
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SI6943BDQ-T1-E3 | Vishay Siliconix |
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Si6954ADQ-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.1A Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-TSSOP |
auf Bestellung 23845 Stücke: Lieferzeit 10-14 Tag (e) |
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SI6963BDQ-T1-E3 | Vishay Siliconix |
Description: MOSFET 2P-CH 20V 3.4A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-TSSOP |
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SI6968BEDQ-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-TSSOP Part Status: Active |
auf Bestellung 2024 Stücke: Lieferzeit 10-14 Tag (e) |
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SI6969BDQ-T1-E3 | Vishay Siliconix |
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SI6981DQ-T1-E3 | Vishay Siliconix |
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SI6983DQ-T1-E3 | Vishay Siliconix |
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SI6993DQ-T1-E3 | Vishay Siliconix |
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SI7100DN-T1-E3 | Vishay Siliconix |
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SI7106DN-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V |
auf Bestellung 50526 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7107DN-T1-E3 | Vishay Siliconix |
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auf Bestellung 1020 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7108DN-T1-E3 | Vishay Siliconix |
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auf Bestellung 17800 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7110DN-T1-E3 | Vishay Siliconix |
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SI7112DN-T1-E3 | Vishay Siliconix |
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SI7113DN-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc) Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V |
auf Bestellung 15351 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7114DN-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V |
auf Bestellung 9901 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7116DN-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V |
auf Bestellung 9625 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7117DN-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7119DN-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 50 V |
auf Bestellung 6942 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7120DN-T1-E3 | Vishay Siliconix |
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SI7136DP-T1-E3 | Vishay Siliconix |
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auf Bestellung 135 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7138DP-T1-E3 | Vishay Siliconix |
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SI7148DP-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 35 V |
auf Bestellung 7402 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7212DN-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
auf Bestellung 14310 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7214DN-T1-E3 | Vishay Siliconix |
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SI7216DN-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
auf Bestellung 9633 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7220DN-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
auf Bestellung 4195 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7222DN-T1-E3 | Vishay Siliconix |
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SI7308DN-T1-E3 | Vishay Siliconix |
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auf Bestellung 3897 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7309DN-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V |
auf Bestellung 8852 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7336ADP-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V Power Dissipation (Max): 5.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V |
auf Bestellung 16795 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7344DP-T1-E3 | Vishay Siliconix |
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SI7366DP-T1-E3 | Vishay Siliconix |
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SI7370DP-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V |
auf Bestellung 21892 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7382DP-T1-E3 | Vishay Siliconix |
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SI7384DP-T1-E3 | Vishay Siliconix |
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SI7386DP-T1-E3 | Vishay Siliconix |
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auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7403BDN-T1-E3 | Vishay Siliconix |
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SI7409ADN-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 7A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V |
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SI7411DN-T1-E3 | Vishay Siliconix |
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Produkt ist nicht verfügbar |
SI5935DC-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3A 1206-8
Description: MOSFET 2P-CH 20V 3A 1206-8
Produkt ist nicht verfügbar
SI5938DU-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A 8PWRPAK
Description: MOSFET 2N-CH 20V 6A 8PWRPAK
Produkt ist nicht verfügbar
SI5943DU-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 6A 8PWRPAK
Description: MOSFET 2P-CH 12V 6A 8PWRPAK
Produkt ist nicht verfügbar
SI5944DU-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A 8PWRPAK
Description: MOSFET 2N-CH 40V 6A 8PWRPAK
Produkt ist nicht verfügbar
SI5947DU-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6A 8PWRPAK
Description: MOSFET 2P-CH 20V 6A 8PWRPAK
Produkt ist nicht verfügbar
Si6410DQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8TSSOP
Description: MOSFET N-CH 30V 8TSSOP
Produkt ist nicht verfügbar
SI6415DQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.5A 8TSSOP
Description: MOSFET P-CH 30V 6.5A 8TSSOP
auf Bestellung 5532 Stücke:
Lieferzeit 10-14 Tag (e)SI6423DQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 8.2A 8TSSOP
Description: MOSFET P-CH 12V 8.2A 8TSSOP
Produkt ist nicht verfügbar
SI6433BDQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4A 8-TSSOP
Description: MOSFET P-CH 12V 4A 8-TSSOP
Produkt ist nicht verfügbar
Si6435ADQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.7A 8-TSSOP
Description: MOSFET P-CH 30V 4.7A 8-TSSOP
Produkt ist nicht verfügbar
SI6459BDQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.2A 8-TSSOP
Description: MOSFET P-CH 60V 2.2A 8-TSSOP
Produkt ist nicht verfügbar
SI6463BDQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6.2A 8-TSSOP
Description: MOSFET P-CH 20V 6.2A 8-TSSOP
Produkt ist nicht verfügbar
SI6467BDQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 6.8A 8-TSSOP
Description: MOSFET P-CH 12V 6.8A 8-TSSOP
Produkt ist nicht verfügbar
SI6544BDQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 3.7A 8-TSSOP
Description: MOSFET N/P-CH 30V 3.7A 8-TSSOP
Produkt ist nicht verfügbar
Si6562DQ-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 8-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-TSSOP
Description: MOSFET N/P-CH 20V 8-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-TSSOP
Produkt ist nicht verfügbar
SI6913DQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.9A 8TSSOP
Description: MOSFET 2P-CH 12V 4.9A 8TSSOP
auf Bestellung 2133 Stücke:
Lieferzeit 10-14 Tag (e)SI6924AEDQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 28V 4.1A 8-TSSOP
Description: MOSFET 2N-CH 28V 4.1A 8-TSSOP
Produkt ist nicht verfügbar
SI6925ADQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 3.3A 8TSSOP
Description: MOSFET 2N-CH 20V 3.3A 8TSSOP
Produkt ist nicht verfügbar
SI6926ADQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
auf Bestellung 4810 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.51 EUR |
15+ | 1.24 EUR |
100+ | 0.96 EUR |
500+ | 0.82 EUR |
1000+ | 0.67 EUR |
Si6928DQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4A 8TSSOP
Description: MOSFET 2N-CH 30V 4A 8TSSOP
Produkt ist nicht verfügbar
SI6943BDQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 2.3A 8TSSOP
Description: MOSFET 2P-CH 12V 2.3A 8TSSOP
Produkt ist nicht verfügbar
Si6954ADQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-TSSOP
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-TSSOP
auf Bestellung 23845 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.5 EUR |
14+ | 1.29 EUR |
100+ | 0.9 EUR |
500+ | 0.75 EUR |
1000+ | 0.64 EUR |
SI6963BDQ-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.4A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-TSSOP
Description: MOSFET 2P-CH 20V 3.4A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-TSSOP
Produkt ist nicht verfügbar
SI6968BEDQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
auf Bestellung 2024 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.16 EUR |
10+ | 1.77 EUR |
100+ | 1.38 EUR |
500+ | 1.17 EUR |
1000+ | 0.95 EUR |
SI6969BDQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4A 8TSSOP
Description: MOSFET 2P-CH 12V 4A 8TSSOP
Produkt ist nicht verfügbar
SI6981DQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.1A 8-TSSOP
Description: MOSFET 2P-CH 20V 4.1A 8-TSSOP
Produkt ist nicht verfügbar
SI6983DQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.6A 8TSSOP
Description: MOSFET 2P-CH 20V 4.6A 8TSSOP
Produkt ist nicht verfügbar
SI6993DQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 3.6A 8TSSOP
Description: MOSFET 2P-CH 30V 3.6A 8TSSOP
Produkt ist nicht verfügbar
SI7100DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 35A 1212-8
Description: MOSFET N-CH 8V 35A 1212-8
Produkt ist nicht verfügbar
SI7106DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12.5A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Description: MOSFET N-CH 20V 12.5A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
auf Bestellung 50526 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.43 EUR |
10+ | 1.99 EUR |
100+ | 1.55 EUR |
500+ | 1.31 EUR |
1000+ | 1.07 EUR |
SI7107DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9.8A 1212-8
Description: MOSFET P-CH 20V 9.8A 1212-8
auf Bestellung 1020 Stücke:
Lieferzeit 10-14 Tag (e)SI7108DN-T1-E3 | ![]() |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A PPAK1212-8
Description: MOSFET N-CH 20V 14A PPAK1212-8
auf Bestellung 17800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.47 EUR |
10+ | 3.11 EUR |
100+ | 2.5 EUR |
500+ | 2.05 EUR |
1000+ | 1.7 EUR |
SI7110DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13.5A PPAK1212-8
Description: MOSFET N-CH 20V 13.5A PPAK1212-8
Produkt ist nicht verfügbar
SI7112DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.3A PPAK1212-8
Description: MOSFET N-CH 30V 11.3A PPAK1212-8
Produkt ist nicht verfügbar
SI7113DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 13.2A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
Description: MOSFET P-CH 100V 13.2A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 15351 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.54 EUR |
10+ | 3.77 EUR |
100+ | 3 EUR |
500+ | 2.54 EUR |
1000+ | 2.15 EUR |
SI7114DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.7A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Description: MOSFET N-CH 30V 11.7A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
auf Bestellung 9901 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.73 EUR |
10+ | 2.27 EUR |
100+ | 1.81 EUR |
500+ | 1.53 EUR |
1000+ | 1.3 EUR |
SI7116DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 10.5A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Description: MOSFET N-CH 40V 10.5A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
auf Bestellung 9625 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.47 EUR |
10+ | 2.87 EUR |
100+ | 2.28 EUR |
500+ | 1.93 EUR |
1000+ | 1.64 EUR |
SI7117DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 2.17A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Description: MOSFET P-CH 150V 2.17A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.09 EUR |
11+ | 1.71 EUR |
100+ | 1.33 EUR |
500+ | 1.13 EUR |
1000+ | 0.92 EUR |
SI7119DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 50 V
Description: MOSFET P-CH 200V 3.8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 50 V
auf Bestellung 6942 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.58 EUR |
14+ | 1.28 EUR |
100+ | 1 EUR |
500+ | 0.85 EUR |
1000+ | 0.69 EUR |
SI7120DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6.3A 1212-8
Description: MOSFET N-CH 60V 6.3A 1212-8
Produkt ist nicht verfügbar
SI7136DP-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 30A PPAK SO-8
Description: MOSFET N-CH 20V 30A PPAK SO-8
auf Bestellung 135 Stücke:
Lieferzeit 10-14 Tag (e)SI7138DP-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A PPAK SO-8
Description: MOSFET N-CH 60V 30A PPAK SO-8
Produkt ist nicht verfügbar
SI7148DP-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 28A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 35 V
Description: MOSFET N-CH 75V 28A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 35 V
auf Bestellung 7402 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.82 EUR |
10+ | 3.18 EUR |
100+ | 2.53 EUR |
500+ | 2.14 EUR |
1000+ | 1.81 EUR |
SI7212DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.9A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Description: MOSFET 2N-CH 30V 4.9A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 14310 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.22 EUR |
10+ | 3.51 EUR |
100+ | 2.79 EUR |
500+ | 2.36 EUR |
1000+ | 2 EUR |
SI7214DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.6A 1212-8
Description: MOSFET 2N-CH 30V 4.6A 1212-8
Produkt ist nicht verfügbar
SI7216DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Description: MOSFET 2N-CH 40V 6A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 9633 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.62 EUR |
10+ | 2.15 EUR |
100+ | 1.67 EUR |
500+ | 1.42 EUR |
1000+ | 1.15 EUR |
SI7220DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3.4A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Description: MOSFET 2N-CH 60V 3.4A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 4195 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.91 EUR |
10+ | 3.25 EUR |
100+ | 2.58 EUR |
500+ | 2.19 EUR |
1000+ | 1.85 EUR |
SI7222DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A 1212-8
Description: MOSFET 2N-CH 40V 6A 1212-8
Produkt ist nicht verfügbar
SI7308DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6A 1212-8
Description: MOSFET N-CH 60V 6A 1212-8
auf Bestellung 3897 Stücke:
Lieferzeit 10-14 Tag (e)SI7309DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
Description: MOSFET P-CH 60V 8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
auf Bestellung 8852 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.65 EUR |
14+ | 1.35 EUR |
100+ | 1.05 EUR |
500+ | 0.89 EUR |
1000+ | 0.72 EUR |
SI7336ADP-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 5.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
Description: MOSFET N-CH 30V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 5.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
auf Bestellung 16795 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.8 EUR |
10+ | 2.33 EUR |
100+ | 1.85 EUR |
500+ | 1.57 EUR |
1000+ | 1.33 EUR |
SI7344DP-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 11A PPAK SO-8
Description: MOSFET N-CH 20V 11A PPAK SO-8
Produkt ist nicht verfügbar
SI7366DP-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13A PPAK SO-8
Description: MOSFET N-CH 20V 13A PPAK SO-8
Produkt ist nicht verfügbar
SI7370DP-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 9.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Description: MOSFET N-CH 60V 9.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
auf Bestellung 21892 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.8 EUR |
10+ | 3.16 EUR |
100+ | 2.52 EUR |
500+ | 2.13 EUR |
1000+ | 1.81 EUR |
SI7382DP-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A PPAK SO-8
Description: MOSFET N-CH 30V 14A PPAK SO-8
Produkt ist nicht verfügbar
SI7384DP-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A PPAK SO-8
Description: MOSFET N-CH 30V 11A PPAK SO-8
Produkt ist nicht verfügbar
SI7386DP-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
Description: MOSFET N-CH 30V 12A PPAK SO-8
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.8 EUR |
10+ | 2.5 EUR |
SI7403BDN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A PPAK1212-8
Description: MOSFET P-CH 20V 8A PPAK1212-8
Produkt ist nicht verfügbar
SI7409ADN-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 7A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Description: MOSFET P-CH 30V 7A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Produkt ist nicht verfügbar
SI7411DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.5A 1212-8
Description: MOSFET P-CH 20V 7.5A 1212-8
Produkt ist nicht verfügbar