![SI7216DN-T1-E3 SI7216DN-T1-E3](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2131/742%3B5882-Dual%3BDN%3B8.jpg)
SI7216DN-T1-E3 Vishay Siliconix
![si7216dn.pdf](/images/adobe-acrobat.png)
Description: MOSFET 2N-CH 40V 6A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.08 EUR |
6000+ | 1.02 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7216DN-T1-E3 Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK 1212, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 20.8W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V, Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual.
Weitere Produktangebote SI7216DN-T1-E3 nach Preis ab 1.03 EUR bis 2.62 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SI7216DN-T1-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
auf Bestellung 6633 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
SI7216DN-T1-E3 | Hersteller : Vishay Semiconductors |
![]() |
auf Bestellung 6456 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
SI7216DN-T1-E3 | Hersteller : Vishay |
![]() |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
SI7216DN-T1-E3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 20A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 6A Pulsed drain current: 20A Power dissipation: 20.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
SI7216DN-T1-E3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 20A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 6A Pulsed drain current: 20A Power dissipation: 20.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |