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SQJ459EP-T1_BE3 SQJ459EP-T1_BE3 Vishay Siliconix sqj459ep.pdf Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V
auf Bestellung 2938 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.06 EUR
11+ 1.68 EUR
100+ 1.31 EUR
500+ 1.11 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 9
SQJA76EP-T1_BE3 SQJA76EP-T1_BE3 Vishay Siliconix sqja76ep.pdf Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
auf Bestellung 2994 Stücke:
Lieferzeit 10-14 Tag (e)
SQJA76EP-T1_BE3 SQJA76EP-T1_BE3 Vishay Siliconix sqja76ep.pdf Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
auf Bestellung 2994 Stücke:
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8+2.39 EUR
10+ 2.15 EUR
100+ 1.67 EUR
500+ 1.38 EUR
1000+ 1.09 EUR
Mindestbestellmenge: 8
SQJA68EP-T1_BE3 SQJA68EP-T1_BE3 Vishay Siliconix sqja68ep.pdf Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Produkt ist nicht verfügbar
SQJA68EP-T1_BE3 SQJA68EP-T1_BE3 Vishay Siliconix sqja68ep.pdf Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
auf Bestellung 2320 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.32 EUR
16+ 1.17 EUR
100+ 0.89 EUR
500+ 0.71 EUR
1000+ 0.57 EUR
Mindestbestellmenge: 14
SIR882BDP-T1-RE3 SIR882BDP-T1-RE3 Vishay Siliconix sir882bdp.pdf Description: MOSFET N-CH 100V 16.5/67.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 67.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3762 pF @ 50 V
Produkt ist nicht verfügbar
SQS460ENW-T1_GE3 SQS460ENW-T1_GE3 Vishay Siliconix sqs460enw.pdf Description: MOSFET N-CH 60V 8A PPAK1212-8W
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SQS460ENW-T1_GE3 SQS460ENW-T1_GE3 Vishay Siliconix sqs460enw.pdf Description: MOSFET N-CH 60V 8A PPAK1212-8W
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SIHG28N65EF-GE3 SIHG28N65EF-GE3 Vishay Siliconix sihg28n65ef.pdf Description: MOSFET N-CH 650V 28A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3249 pF @ 100 V
Produkt ist nicht verfügbar
SIHP054N65E-GE3 SIHP054N65E-GE3 Vishay Siliconix sihp054n65e.pdf Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 20A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3769 pF @ 100 V
auf Bestellung 1000 Stücke:
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1000+7.62 EUR
Mindestbestellmenge: 1000
SIHP054N65E-GE3 SIHP054N65E-GE3 Vishay Siliconix sihp054n65e.pdf Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 20A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3769 pF @ 100 V
auf Bestellung 1040 Stücke:
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2+13.43 EUR
10+ 11.51 EUR
100+ 9.59 EUR
500+ 8.46 EUR
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SIHP074N65E-GE3 SIHP074N65E-GE3 Vishay Siliconix sihp074n65e.pdf Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2904 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+7.15 EUR
Mindestbestellmenge: 1000
SIHP074N65E-GE3 SIHP074N65E-GE3 Vishay Siliconix sihp074n65e.pdf Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2904 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.6 EUR
10+ 10.8 EUR
100+ 9 EUR
500+ 7.94 EUR
Mindestbestellmenge: 2
SUM70042M-GE3 SUM70042M-GE3 Vishay Siliconix sum70042m.pdf Description: N-CHANNEL 100 V (D-S) MOSFET D2P
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.83mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 50 V
Produkt ist nicht verfügbar
SUM70042M-GE3 SUM70042M-GE3 Vishay Siliconix sum70042m.pdf Description: N-CHANNEL 100 V (D-S) MOSFET D2P
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.83mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 50 V
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.05 EUR
10+ 7.59 EUR
100+ 6.14 EUR
Mindestbestellmenge: 2
SIZ328DT-T1-GE3 SIZ328DT-T1-GE3 Vishay Siliconix siz328dt.pdf Description: MOSFET DUAL N-CHAN 25V POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
Produkt ist nicht verfügbar
SIZ328DT-T1-GE3 SIZ328DT-T1-GE3 Vishay Siliconix siz328dt.pdf Description: MOSFET DUAL N-CHAN 25V POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
auf Bestellung 2850 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.6 EUR
13+ 1.39 EUR
100+ 0.96 EUR
500+ 0.8 EUR
1000+ 0.68 EUR
Mindestbestellmenge: 11
IRFP440 IRFP440 Vishay Siliconix TO247AC_Front.jpg Description: MOSFET N-CH 500V 8.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 5.3A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
IRFP448 IRFP448 Vishay Siliconix 91229.pdf Description: MOSFET N-CH 500V 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6.6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
IRFP448PBF IRFP448PBF Vishay Siliconix 91229.pdf Description: MOSFET N-CH 500V 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6.6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
SQJ154EP-T1_GE3 SQJ154EP-T1_GE3 Vishay Siliconix sqj154ep.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 243A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SQJ154EP-T1_GE3 SQJ154EP-T1_GE3 Vishay Siliconix sqj154ep.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 243A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1234 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.85 EUR
12+ 1.51 EUR
100+ 1.18 EUR
500+ 1 EUR
1000+ 0.81 EUR
Mindestbestellmenge: 10
SQS142ELNW-T1_GE3 SQS142ELNW-T1_GE3 Vishay Siliconix sqs142elnw.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2442 pF @ 25 V
Produkt ist nicht verfügbar
SQS142ELNW-T1_GE3 SQS142ELNW-T1_GE3 Vishay Siliconix sqs142elnw.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2442 pF @ 25 V
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SIHFU9220-GE3 Vishay Siliconix sihfr922.pdf Description: MOSFET P-CH 200V 3.6A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 2978 Stücke:
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SIHB150N60E-GE3 SIHB150N60E-GE3 Vishay Siliconix sihb150n60e.pdf Description: E SERIES POWER MOSFET D2PAK (TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
Produkt ist nicht verfügbar
SIHB150N60E-GE3 SIHB150N60E-GE3 Vishay Siliconix sihb150n60e.pdf Description: E SERIES POWER MOSFET D2PAK (TO-
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 992 Stücke:
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IRF644 IRF644 Vishay Siliconix 91039.pdf description Description: MOSFET N-CH 250V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
IRFP450PBF IRFP450PBF Vishay Siliconix 91233.pdf Description: MOSFET N-CH 500V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 2916 Stücke:
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IRFB18N50K IRFB18N50K Vishay Siliconix irfb18n50k.pdf Description: MOSFET N-CH 500V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
Produkt ist nicht verfügbar
SQD40081EL_GE3 SQD40081EL_GE3 Vishay Siliconix sqd40081el.pdf Description: MOSFET P-CH 40V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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2000+0.88 EUR
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SQD40081EL_GE3 SQD40081EL_GE3 Vishay Siliconix sqd40081el.pdf Description: MOSFET P-CH 40V 50A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7396 Stücke:
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IRFP150 IRFP150 Vishay Siliconix HRISD017-4-483.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 41A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Produkt ist nicht verfügbar
SIHP10N40D-E3 SIHP10N40D-E3 Vishay Siliconix sihp10n40d.pdf Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
Produkt ist nicht verfügbar
IRFP9240 IRFP9240 Vishay Siliconix description Description: MOSFET P-CH 200V 12A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 7.2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
SIC403BCD-T1-GE3 SIC403BCD-T1-GE3 Vishay Siliconix sic403abcd.pdf Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerWFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 6A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
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3000+1.45 EUR
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SIC403BCD-T1-GE3 SIC403BCD-T1-GE3 Vishay Siliconix sic403abcd.pdf Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Cut Tape (CT)
Package / Case: 32-PowerWFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 6A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
auf Bestellung 8694 Stücke:
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SI2367DS-T1-BE3 SI2367DS-T1-BE3 Vishay Siliconix si2367ds.pdf Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
Produkt ist nicht verfügbar
SI2367DS-T1-BE3 SI2367DS-T1-BE3 Vishay Siliconix si2367ds.pdf Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
auf Bestellung 2975 Stücke:
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SIR878BDP-T1-RE3 SIR878BDP-T1-RE3 Vishay Siliconix sir878bdp.pdf Description: MOSFET N-CH 100V 12A/42.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V
auf Bestellung 6000 Stücke:
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V30365-T1-GE3 Vishay Siliconix Description: MOSFET N-CH SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
V30368-T1-E3 Vishay Siliconix Description: MOSFET N-CH SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
SI7315DN-T1-GE3 SI7315DN-T1-GE3 Vishay Siliconix si7315dn.pdf Description: MOSFET P-CH 150V 8.9A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 2.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 75 V
auf Bestellung 11149 Stücke:
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SI4925BDY-T1-GE3 SI4925BDY-T1-GE3 Vishay Siliconix 72001.pdf Description: MOSFET 2P-CH 30V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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SI4925BDY-T1-GE3 SI4925BDY-T1-GE3 Vishay Siliconix 72001.pdf Description: MOSFET 2P-CH 30V 5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 2500 Stücke:
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7+2.66 EUR
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500+ 1.49 EUR
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SIC403ACD-T1-GE3 SIC403ACD-T1-GE3 Vishay Siliconix sic403abcd.pdf Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerWFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 6A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
auf Bestellung 12000 Stücke:
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3000+1.41 EUR
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Mindestbestellmenge: 3000
SIC403ACD-T1-GE3 SIC403ACD-T1-GE3 Vishay Siliconix sic403abcd.pdf Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Cut Tape (CT)
Package / Case: 32-PowerWFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 6A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
auf Bestellung 14870 Stücke:
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SI2356DS-T1-BE3 SI2356DS-T1-BE3 Vishay Siliconix si2356ds.pdf Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.2A, 10V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V
Produkt ist nicht verfügbar
SI2356DS-T1-BE3 SI2356DS-T1-BE3 Vishay Siliconix si2356ds.pdf Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.2A, 10V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V
Produkt ist nicht verfügbar
SIHB25N50E-GE3 SIHB25N50E-GE3 Vishay Siliconix sihb25n50e.pdf Description: MOSFET N-CH 500V 26A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V
auf Bestellung 1000 Stücke:
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500+ 3.47 EUR
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Mindestbestellmenge: 4
IRF830PBF IRF830PBF Vishay Siliconix irlz44.pdf Description: MOSFET N-CH 500V 4.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
auf Bestellung 8429 Stücke:
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50+ 2 EUR
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500+ 1.35 EUR
1000+ 1.1 EUR
2000+ 1.03 EUR
5000+ 0.98 EUR
Mindestbestellmenge: 8
SQ9407EY-T1_BE3 SQ9407EY-T1_BE3 Vishay Siliconix sq9407ey.pdf Description: MOSFET P-CH 60V 4.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 3.75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12500 Stücke:
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Mindestbestellmenge: 2500
SQ9407EY-T1_BE3 SQ9407EY-T1_BE3 Vishay Siliconix sq9407ey.pdf Description: MOSFET P-CH 60V 4.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 3.75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12617 Stücke:
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12+ 1.49 EUR
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500+ 0.98 EUR
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SISS4410DN-T1-GE3 SISS4410DN-T1-GE3 Vishay Siliconix siss4410dn.pdf Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 20 V
auf Bestellung 6000 Stücke:
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3000+0.5 EUR
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SISS4410DN-T1-GE3 SISS4410DN-T1-GE3 Vishay Siliconix siss4410dn.pdf Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 20 V
auf Bestellung 6000 Stücke:
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500+ 0.65 EUR
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SIR4409DP-T1-RE3 SIR4409DP-T1-RE3 Vishay Siliconix sir4409dp.pdf Description: P-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 60.6A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5670 pF @ 20 V
auf Bestellung 3000 Stücke:
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3000+0.88 EUR
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SIR4409DP-T1-RE3 SIR4409DP-T1-RE3 Vishay Siliconix sir4409dp.pdf Description: P-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 60.6A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5670 pF @ 20 V
auf Bestellung 5980 Stücke:
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SUD90330E-BE3 Vishay Siliconix doc?74527 Description: MOSFET N-CH 200V 35.8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V
Produkt ist nicht verfügbar
SUD90330E-BE3 Vishay Siliconix doc?74527 Description: MOSFET N-CH 200V 35.8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V
Produkt ist nicht verfügbar
SUD90330E-GE3 SUD90330E-GE3 Vishay Siliconix sud90330e.pdf Description: MOSFET N-CH 200V 35.8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V
Produkt ist nicht verfügbar
SQJ459EP-T1_BE3 sqj459ep.pdf
SQJ459EP-T1_BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V
auf Bestellung 2938 Stücke:
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Anzahl Preis ohne MwSt
9+2.06 EUR
11+ 1.68 EUR
100+ 1.31 EUR
500+ 1.11 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 9
SQJA76EP-T1_BE3 sqja76ep.pdf
SQJA76EP-T1_BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
auf Bestellung 2994 Stücke:
Lieferzeit 10-14 Tag (e)
SQJA76EP-T1_BE3 sqja76ep.pdf
SQJA76EP-T1_BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
auf Bestellung 2994 Stücke:
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Anzahl Preis ohne MwSt
8+2.39 EUR
10+ 2.15 EUR
100+ 1.67 EUR
500+ 1.38 EUR
1000+ 1.09 EUR
Mindestbestellmenge: 8
SQJA68EP-T1_BE3 sqja68ep.pdf
SQJA68EP-T1_BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Produkt ist nicht verfügbar
SQJA68EP-T1_BE3 sqja68ep.pdf
SQJA68EP-T1_BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
auf Bestellung 2320 Stücke:
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Anzahl Preis ohne MwSt
14+1.32 EUR
16+ 1.17 EUR
100+ 0.89 EUR
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SIR882BDP-T1-RE3 sir882bdp.pdf
SIR882BDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.5/67.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 67.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3762 pF @ 50 V
Produkt ist nicht verfügbar
SQS460ENW-T1_GE3 sqs460enw.pdf
SQS460ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A PPAK1212-8W
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SQS460ENW-T1_GE3 sqs460enw.pdf
SQS460ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A PPAK1212-8W
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SIHG28N65EF-GE3 sihg28n65ef.pdf
SIHG28N65EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 28A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3249 pF @ 100 V
Produkt ist nicht verfügbar
SIHP054N65E-GE3 sihp054n65e.pdf
SIHP054N65E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 20A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3769 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+7.62 EUR
Mindestbestellmenge: 1000
SIHP054N65E-GE3 sihp054n65e.pdf
SIHP054N65E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 20A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3769 pF @ 100 V
auf Bestellung 1040 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.43 EUR
10+ 11.51 EUR
100+ 9.59 EUR
500+ 8.46 EUR
Mindestbestellmenge: 2
SIHP074N65E-GE3 sihp074n65e.pdf
SIHP074N65E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2904 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+7.15 EUR
Mindestbestellmenge: 1000
SIHP074N65E-GE3 sihp074n65e.pdf
SIHP074N65E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2904 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.6 EUR
10+ 10.8 EUR
100+ 9 EUR
500+ 7.94 EUR
Mindestbestellmenge: 2
SUM70042M-GE3 sum70042m.pdf
SUM70042M-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET D2P
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.83mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 50 V
Produkt ist nicht verfügbar
SUM70042M-GE3 sum70042m.pdf
SUM70042M-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET D2P
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.83mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 50 V
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.05 EUR
10+ 7.59 EUR
100+ 6.14 EUR
Mindestbestellmenge: 2
SIZ328DT-T1-GE3 siz328dt.pdf
SIZ328DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CHAN 25V POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
Produkt ist nicht verfügbar
SIZ328DT-T1-GE3 siz328dt.pdf
SIZ328DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CHAN 25V POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
auf Bestellung 2850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.6 EUR
13+ 1.39 EUR
100+ 0.96 EUR
500+ 0.8 EUR
1000+ 0.68 EUR
Mindestbestellmenge: 11
IRFP440 TO247AC_Front.jpg
IRFP440
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 5.3A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
IRFP448 91229.pdf
IRFP448
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6.6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
IRFP448PBF 91229.pdf
IRFP448PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6.6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
SQJ154EP-T1_GE3 sqj154ep.pdf
SQJ154EP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 243A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SQJ154EP-T1_GE3 sqj154ep.pdf
SQJ154EP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 243A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.85 EUR
12+ 1.51 EUR
100+ 1.18 EUR
500+ 1 EUR
1000+ 0.81 EUR
Mindestbestellmenge: 10
SQS142ELNW-T1_GE3 sqs142elnw.pdf
SQS142ELNW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2442 pF @ 25 V
Produkt ist nicht verfügbar
SQS142ELNW-T1_GE3 sqs142elnw.pdf
SQS142ELNW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2442 pF @ 25 V
auf Bestellung 3044 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.71 EUR
12+ 1.51 EUR
100+ 1.16 EUR
500+ 0.91 EUR
1000+ 0.73 EUR
Mindestbestellmenge: 11
SIHFU9220-GE3 sihfr922.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.6A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 2978 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.44 EUR
15+ 1.18 EUR
100+ 0.92 EUR
500+ 0.78 EUR
1000+ 0.63 EUR
2000+ 0.6 EUR
Mindestbestellmenge: 13
SIHB150N60E-GE3 sihb150n60e.pdf
SIHB150N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET D2PAK (TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
Produkt ist nicht verfügbar
SIHB150N60E-GE3 sihb150n60e.pdf
SIHB150N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET D2PAK (TO-
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.02 EUR
10+ 5.06 EUR
100+ 4.09 EUR
500+ 3.64 EUR
Mindestbestellmenge: 3
IRF644 description 91039.pdf
IRF644
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
IRFP450PBF 91233.pdf
IRFP450PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 2916 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.6 EUR
25+ 4.43 EUR
100+ 3.8 EUR
500+ 3.38 EUR
1000+ 2.89 EUR
2000+ 2.72 EUR
Mindestbestellmenge: 4
IRFB18N50K irfb18n50k.pdf
IRFB18N50K
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
Produkt ist nicht verfügbar
SQD40081EL_GE3 sqd40081el.pdf
SQD40081EL_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.88 EUR
6000+ 0.83 EUR
Mindestbestellmenge: 2000
SQD40081EL_GE3 sqd40081el.pdf
SQD40081EL_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7396 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.13 EUR
11+ 1.73 EUR
100+ 1.35 EUR
500+ 1.14 EUR
1000+ 0.93 EUR
Mindestbestellmenge: 9
IRFP150 HRISD017-4-483.pdf?t.download=true&u=5oefqw
IRFP150
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 41A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Produkt ist nicht verfügbar
SIHP10N40D-E3 sihp10n40d.pdf
SIHP10N40D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
Produkt ist nicht verfügbar
IRFP9240 description
IRFP9240
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 12A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 7.2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
SIC403BCD-T1-GE3 sic403abcd.pdf
SIC403BCD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerWFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 6A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.45 EUR
6000+ 1.39 EUR
Mindestbestellmenge: 3000
SIC403BCD-T1-GE3 sic403abcd.pdf
SIC403BCD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Cut Tape (CT)
Package / Case: 32-PowerWFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 6A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
auf Bestellung 8694 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.17 EUR
10+ 2.84 EUR
25+ 2.68 EUR
100+ 2.28 EUR
250+ 2.14 EUR
500+ 1.88 EUR
1000+ 1.55 EUR
Mindestbestellmenge: 6
SI2367DS-T1-BE3 si2367ds.pdf
SI2367DS-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
Produkt ist nicht verfügbar
SI2367DS-T1-BE3 si2367ds.pdf
SI2367DS-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
28+ 0.63 EUR
100+ 0.47 EUR
500+ 0.37 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 24
SIR878BDP-T1-RE3 sir878bdp.pdf
SIR878BDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 12A/42.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.1 EUR
6000+ 1.05 EUR
Mindestbestellmenge: 3000
V30365-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
V30368-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
SI7315DN-T1-GE3 si7315dn.pdf
SI7315DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 8.9A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 2.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 75 V
auf Bestellung 11149 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+1.97 EUR
11+ 1.62 EUR
100+ 1.26 EUR
500+ 1.06 EUR
1000+ 0.87 EUR
Mindestbestellmenge: 9
SI4925BDY-T1-GE3 72001.pdf
SI4925BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.2 EUR
Mindestbestellmenge: 2500
SI4925BDY-T1-GE3 72001.pdf
SI4925BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.66 EUR
10+ 2.21 EUR
100+ 1.76 EUR
500+ 1.49 EUR
1000+ 1.26 EUR
Mindestbestellmenge: 7
SIC403ACD-T1-GE3 sic403abcd.pdf
SIC403ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerWFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 6A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.41 EUR
6000+ 1.36 EUR
Mindestbestellmenge: 3000
SIC403ACD-T1-GE3 sic403abcd.pdf
SIC403ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Cut Tape (CT)
Package / Case: 32-PowerWFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 6A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
auf Bestellung 14870 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.08 EUR
10+ 2.77 EUR
25+ 2.62 EUR
100+ 2.23 EUR
250+ 2.09 EUR
500+ 1.83 EUR
1000+ 1.52 EUR
Mindestbestellmenge: 6
SI2356DS-T1-BE3 si2356ds.pdf
SI2356DS-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.2A, 10V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V
Produkt ist nicht verfügbar
SI2356DS-T1-BE3 si2356ds.pdf
SI2356DS-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.2A, 10V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V
Produkt ist nicht verfügbar
SIHB25N50E-GE3 sihb25n50e.pdf
SIHB25N50E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 26A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.74 EUR
10+ 4.82 EUR
100+ 3.9 EUR
500+ 3.47 EUR
1000+ 2.97 EUR
Mindestbestellmenge: 4
IRF830PBF irlz44.pdf
IRF830PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 4.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
auf Bestellung 8429 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.5 EUR
50+ 2 EUR
100+ 1.59 EUR
500+ 1.35 EUR
1000+ 1.1 EUR
2000+ 1.03 EUR
5000+ 0.98 EUR
Mindestbestellmenge: 8
SQ9407EY-T1_BE3 sq9407ey.pdf
SQ9407EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 4.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 3.75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.75 EUR
5000+ 0.72 EUR
12500+ 0.69 EUR
Mindestbestellmenge: 2500
SQ9407EY-T1_BE3 sq9407ey.pdf
SQ9407EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 4.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 3.75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12617 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.83 EUR
12+ 1.49 EUR
100+ 1.16 EUR
500+ 0.98 EUR
1000+ 0.8 EUR
Mindestbestellmenge: 10
SISS4410DN-T1-GE3 siss4410dn.pdf
SISS4410DN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.5 EUR
6000+ 0.47 EUR
Mindestbestellmenge: 3000
SISS4410DN-T1-GE3 siss4410dn.pdf
SISS4410DN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.32 EUR
16+ 1.13 EUR
100+ 0.78 EUR
500+ 0.65 EUR
1000+ 0.56 EUR
Mindestbestellmenge: 14
SIR4409DP-T1-RE3 sir4409dp.pdf
SIR4409DP-T1-RE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 60.6A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5670 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.88 EUR
Mindestbestellmenge: 3000
SIR4409DP-T1-RE3 sir4409dp.pdf
SIR4409DP-T1-RE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 60.6A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5670 pF @ 20 V
auf Bestellung 5980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.13 EUR
11+ 1.74 EUR
100+ 1.35 EUR
500+ 1.15 EUR
1000+ 0.93 EUR
Mindestbestellmenge: 9
SUD90330E-BE3 doc?74527
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 35.8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V
Produkt ist nicht verfügbar
SUD90330E-BE3 doc?74527
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 35.8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V
Produkt ist nicht verfügbar
SUD90330E-GE3 sud90330e.pdf
SUD90330E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 35.8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V
Produkt ist nicht verfügbar
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