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SIZ328DT-T1-GE3 Vishay Semiconductors
auf Bestellung 5682 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.44 EUR |
10+ | 1.27 EUR |
100+ | 0.99 EUR |
500+ | 0.79 EUR |
1000+ | 0.64 EUR |
3000+ | 0.6 EUR |
6000+ | 0.56 EUR |
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Technische Details SIZ328DT-T1-GE3 Vishay Semiconductors
Description: MOSFET DUAL N-CHAN 25V POWERPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V, Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-Power33 (3x3), Part Status: Active.
Weitere Produktangebote SIZ328DT-T1-GE3 nach Preis ab 0.68 EUR bis 1.6 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SIZ328DT-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active |
auf Bestellung 2850 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ328DT-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active |
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