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SI4925BDY-T1-GE3

SI4925BDY-T1-GE3 Vishay Semiconductors

72001.pdf Hersteller: Vishay Semiconductors
MOSFETs 30V 7.1A 2.0W 25mohm @ 10V
auf Bestellung 49781 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.64 EUR
10+ 2.18 EUR
100+ 1.72 EUR
500+ 1.44 EUR
1000+ 1.18 EUR
2500+ 1.15 EUR
5000+ 1.12 EUR
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Technische Details SI4925BDY-T1-GE3 Vishay Semiconductors

Description: MOSFET 2P-CH 30V 5.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.3A, Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC.

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SI4925BDY-T1-GE3 SI4925BDY-T1-GE3 Hersteller : Vishay Siliconix 72001.pdf Description: MOSFET 2P-CH 30V 5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.69 EUR
10+ 2.23 EUR
100+ 1.78 EUR
500+ 1.5 EUR
1000+ 1.28 EUR
Mindestbestellmenge: 7
SI4925BDY-T1-GE3 SI4925BDY-T1-GE3 Hersteller : Vishay Siliconix 72001.pdf Description: MOSFET 2P-CH 30V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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