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SIHG47N60AEF-GE3 SIHG47N60AEF-GE3 Vishay Siliconix sihg47n60aef.pdf Description: MOSFET N-CH 600V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3576 pF @ 100 V
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.8 EUR
25+ 11.02 EUR
100+ 9.86 EUR
Mindestbestellmenge: 2
SI4425FDY-T1-GE3 SI4425FDY-T1-GE3 Vishay Siliconix si4425fdy.pdf Description: MOSFET P-CH 30V 12.7/18.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
auf Bestellung 11817 Stücke:
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2500+0.43 EUR
5000+ 0.41 EUR
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SIA483ADJ-T1-GE3 SIA483ADJ-T1-GE3 Vishay Siliconix sia483adj.pdf Description: MOSFET P-CH 30-V PWRPAK SC-70
auf Bestellung 3000 Stücke:
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SIRA18BDP-T1-GE3 SIRA18BDP-T1-GE3 Vishay Siliconix sira18bdp.pdf Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.26 EUR
Mindestbestellmenge: 3000
SIHP186N60EF-GE3 SIHP186N60EF-GE3 Vishay Siliconix sihp186n60ef.pdf Description: MOSFET N-CH 600V 18A TO220AB
Produkt ist nicht verfügbar
SIHP690N60E-GE3 SIHP690N60E-GE3 Vishay Siliconix sihp690n60e.pdf Description: MOSFET N-CH 600V 6.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 100 V
auf Bestellung 1025 Stücke:
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500+ 1.64 EUR
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SI4425FDY-T1-GE3 SI4425FDY-T1-GE3 Vishay Siliconix si4425fdy.pdf Description: MOSFET P-CH 30V 12.7/18.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
auf Bestellung 11817 Stücke:
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19+ 0.98 EUR
100+ 0.68 EUR
500+ 0.56 EUR
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SIA483ADJ-T1-GE3 SIA483ADJ-T1-GE3 Vishay Siliconix sia483adj.pdf Description: MOSFET P-CH 30-V PWRPAK SC-70
auf Bestellung 5989 Stücke:
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SIRA18BDP-T1-GE3 SIRA18BDP-T1-GE3 Vishay Siliconix sira18bdp.pdf Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
auf Bestellung 10131 Stücke:
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27+ 0.65 EUR
100+ 0.46 EUR
500+ 0.36 EUR
1000+ 0.29 EUR
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SIR170DP-T1-RE3 SIR170DP-T1-RE3 Vishay Siliconix sir170dp.pdf Description: MOSFET N-CH 100V 23.2A/95A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 50 V
auf Bestellung 7386 Stücke:
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6+3.03 EUR
10+ 2.51 EUR
100+ 2 EUR
500+ 1.69 EUR
1000+ 1.43 EUR
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DG9424EDN-T1-GE4 DG9424EDN-T1-GE4 Vishay Siliconix dg9424e.pdf Description: IC SWITCH SPST-NC X 4 3OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 3Ohm
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 38pC
Crosstalk: -77dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
Produkt ist nicht verfügbar
DG9424EDN-T1-GE4 DG9424EDN-T1-GE4 Vishay Siliconix dg9424e.pdf Description: IC SWITCH SPST-NC X 4 3OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 3Ohm
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 38pC
Crosstalk: -77dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
auf Bestellung 670 Stücke:
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4+4.79 EUR
10+ 4.31 EUR
25+ 4.07 EUR
100+ 3.53 EUR
250+ 3.35 EUR
500+ 3.01 EUR
Mindestbestellmenge: 4
SI2393DS-T1-GE3 SI2393DS-T1-GE3 Vishay Siliconix si2393ds.pdf Description: MOSFET P-CH 30V 6.1A/7.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 22.7mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 15 V
auf Bestellung 9000 Stücke:
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3000+0.21 EUR
9000+ 0.19 EUR
Mindestbestellmenge: 3000
SIHD690N60E-GE3 SIHD690N60E-GE3 Vishay Siliconix sihd690n60e.pdf Description: MOSFET N-CH 600V 6.4A DPAK
Produkt ist nicht verfügbar
SQS840CENW-T1_GE3 SQS840CENW-T1_GE3 Vishay Siliconix sqs840cenw.pdf Description: MOSFET N-CH 40V 12A PPAK 1212-8W
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1031 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.43 EUR
Mindestbestellmenge: 3000
SQS423ENW-T1_GE3 SQS423ENW-T1_GE3 Vishay Siliconix sqs423enw.pdf Description: MOSFET P-CH 30V 16A PPAK 1212-8W
Produkt ist nicht verfügbar
SQS423ENW-T1_GE3 SQS423ENW-T1_GE3 Vishay Siliconix sqs423enw.pdf Description: MOSFET P-CH 30V 16A PPAK 1212-8W
auf Bestellung 2674 Stücke:
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SI2393DS-T1-GE3 SI2393DS-T1-GE3 Vishay Siliconix si2393ds.pdf Description: MOSFET P-CH 30V 6.1A/7.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 22.7mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 15 V
auf Bestellung 11773 Stücke:
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23+0.79 EUR
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500+ 0.34 EUR
1000+ 0.23 EUR
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SQS840CENW-T1_GE3 SQS840CENW-T1_GE3 Vishay Siliconix sqs840cenw.pdf Description: MOSFET N-CH 40V 12A PPAK 1212-8W
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1031 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4839 Stücke:
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16+1.14 EUR
18+ 0.98 EUR
100+ 0.68 EUR
500+ 0.57 EUR
1000+ 0.48 EUR
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SIHF9630S-GE3 SIHF9630S-GE3 Vishay Siliconix sihf9630.pdf Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar
SIHF520STRL-GE3 SIHF520STRL-GE3 Vishay Siliconix sihf520s.pdf Description: MOSFET N-CH 100V 9.2A D2PAK
Produkt ist nicht verfügbar
SIHFR430ATR-GE3 SIHFR430ATR-GE3 Vishay Siliconix sihfr430.pdf Description: MOSFET N-CH 500V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
SIHF540STRL-GE3 SIHF540STRL-GE3 Vishay Siliconix sihf540s.pdf Description: MOSFET N-CH 100V 28A D2PAK
Produkt ist nicht verfügbar
SIHFR9310-GE3 SIHFR9310-GE3 Vishay Siliconix sihfr931.pdf Description: MOSFET P-CH 400V 1.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Produkt ist nicht verfügbar
SQD40N06-14L_T4GE3 SQD40N06-14L_T4GE3 Vishay Siliconix sqd40n06-14l.pdf Description: MOSFET N-CH 60V 40A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2105 pF @ 25 V
Produkt ist nicht verfügbar
SIHFR9024TR-GE3 SIHFR9024TR-GE3 Vishay Siliconix sihfr902.pdf Description: MOSFET P-CH 60V 8.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Produkt ist nicht verfügbar
SIHFR9014-GE3 SIHFR9014-GE3 Vishay Siliconix sihfr901.pdf Description: MOSFET P-CH 60V 5.1A DPAK
Produkt ist nicht verfügbar
SIHFR430ATRR-GE3 SIHFR430ATRR-GE3 Vishay Siliconix sihfr430.pdf Description: MOSFET N-CH 500V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
SIHF9640S-GE3 SIHF9640S-GE3 Vishay Siliconix sihf9640.pdf Description: MOSFET P-CH 200V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
SIHFR420A-GE3 SIHFR420A-GE3 Vishay Siliconix sihfr420.pdf Description: MOSFET N-CH 500V 3.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Produkt ist nicht verfügbar
SIHF520STRR-GE3 SIHF520STRR-GE3 Vishay Siliconix sihf520s.pdf Description: MOSFET N-CH 100V 9.2A D2PAK
Produkt ist nicht verfügbar
SIHFR220-GE3 SIHFR220-GE3 Vishay Siliconix sihfr220.pdf Description: MOSFET N-CH 200V 4.8A DPAK
Produkt ist nicht verfügbar
SQD50P03-07-T4_GE3 Vishay Siliconix sqd50p03.pdf Description: MOSFET P-CH 30V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 25 V
Produkt ist nicht verfügbar
SIHF530-GE3 SIHF530-GE3 Vishay Siliconix 91019.pdf Description: MOSFET N-CH 100V 14A TO220AB
Produkt ist nicht verfügbar
SQJ431EP-T2_GE3 Vishay Siliconix SQJ431EP.pdf Description: MOSFET P-CH 200V 12A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 213mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SIHFR430ATRL-GE3 SIHFR430ATRL-GE3 Vishay Siliconix sihfr430.pdf Description: MOSFET N-CH 500V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
DG406DW-T1-E3 DG406DW-T1-E3 Vishay Siliconix dg406.pdf Description: IC MUX 16:1 100OHM 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 28-SOIC
Voltage - Supply, Single (V+): 7.5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 15pC
Multiplexer/Demultiplexer Circuit: 16:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 1
auf Bestellung 3541 Stücke:
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2+11.11 EUR
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100+ 8.3 EUR
250+ 7.92 EUR
500+ 7.23 EUR
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IRFS9N60ATRRPBF IRFS9N60ATRRPBF Vishay Siliconix sihs9n60.pdf Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 875 Stücke:
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DG303BDY-T1-E3 DG303BDY-T1-E3 Vishay Siliconix dg300b.pdf Description: IC SW DPST-NO/NCX2 50OHM 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 50Ohm
Supplier Device Package: 14-SOIC
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 8pC
Crosstalk: -74dB @ 500kHz
Switch Circuit: DPST - NO/NC
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
auf Bestellung 6382 Stücke:
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IRF820STRRPBF IRF820STRRPBF Vishay Siliconix sihf820s.pdf Description: MOSFET N-CH 500V 2.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 1546 Stücke:
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SI4128DY-T1-E3 SI4128DY-T1-E3 Vishay Siliconix si4128dy-old.pdf Description: MOSFET N-CH 30V 10.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
auf Bestellung 9616 Stücke:
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18+0.99 EUR
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IRFZ44STRLPBF IRFZ44STRLPBF Vishay Siliconix sihfz44s.pdf Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 1424 Stücke:
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SIC478EVB-E SIC478EVB-E Vishay Siliconix sic47x.pdf Description: SIC478 EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.8V ~ 24V
Voltage - Input: 4.5V ~ 55V
Current - Output: 5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC478
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
SIC477EVB-D SIC477EVB-D Vishay Siliconix sic47x.pdf Description: SIC477 EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.8V ~ 24V
Voltage - Input: 4.5V ~ 55V
Current - Output: 8A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC477
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+63.89 EUR
SIC476EVB-D SIC476EVB-D Vishay Siliconix sic47x.pdf Description: SIC476 EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.8V ~ 24V
Voltage - Input: 4.5V ~ 55V
Current - Output: 12A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC476
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
auf Bestellung 1 Stücke:
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SIC479EVB-E SIC479EVB-E Vishay Siliconix sic47x.pdf Description: SIC479 EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.8V ~ 24V
Voltage - Input: 4.5V ~ 55V
Current - Output: 3A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC479
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
auf Bestellung 1 Stücke:
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DG507BEQ-T1-GE3 DG507BEQ-T1-GE3 Vishay Siliconix dg506b.pdf Description: IC MUX DUAL 8:1 300OHM 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 300Ohm
-3db Bandwidth: 217MHz
Supplier Device Package: 28-TSSOP
Voltage - Supply, Single (V+): 12V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 1pC
Crosstalk: -84dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 250ns, 200ns
Channel Capacitance (CS(off), CD(off)): 3pF, 17pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
auf Bestellung 4670 Stücke:
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500+ 3.88 EUR
Mindestbestellmenge: 4
SISS32LDN-T1-GE3 SISS32LDN-T1-GE3 Vishay Siliconix siss32ldn.pdf Description: MOSFET N-CH 80V 17.4A/63A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 40 V
auf Bestellung 21000 Stücke:
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Mindestbestellmenge: 3000
SIZ250DT-T1-GE3 SIZ250DT-T1-GE3 Vishay Siliconix siz250dt.pdf Description: MOSFET 2N-CH 60V 14A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Part Status: Active
Produkt ist nicht verfügbar
SISA35DN-T1-GE3 SISA35DN-T1-GE3 Vishay Siliconix sisa35dn.pdf Description: MOSFET P-CH 30V 10A/16A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Produkt ist nicht verfügbar
SISS32LDN-T1-GE3 SISS32LDN-T1-GE3 Vishay Siliconix siss32ldn.pdf Description: MOSFET N-CH 80V 17.4A/63A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 40 V
auf Bestellung 23165 Stücke:
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500+ 1.03 EUR
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SIZ250DT-T1-GE3 SIZ250DT-T1-GE3 Vishay Siliconix siz250dt.pdf Description: MOSFET 2N-CH 60V 14A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Part Status: Active
auf Bestellung 287 Stücke:
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SISA35DN-T1-GE3 SISA35DN-T1-GE3 Vishay Siliconix sisa35dn.pdf Description: MOSFET P-CH 30V 10A/16A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 4773 Stücke:
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SIHB17N80E-T1-GE3 Vishay Siliconix sihb17n80e.pdf Description: MOSFET N-CH 800V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
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SIHU5N80AE-GE3 SIHU5N80AE-GE3 Vishay Siliconix sihu5n80ae.pdf Description: MOSFET N-CH 800V 4.4A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V
auf Bestellung 2961 Stücke:
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SIHB17N80E-T1-GE3 Vishay Siliconix sihb17n80e.pdf Description: MOSFET N-CH 800V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.1 EUR
10+ 6.8 EUR
100+ 5.5 EUR
Mindestbestellmenge: 3
SIZ342ADT-T1-GE3 SIZ342ADT-T1-GE3 Vishay Siliconix siz342adt.pdf Description: MOSFET 2N-CH 30V 15.7A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.52 EUR
6000+ 0.49 EUR
9000+ 0.45 EUR
Mindestbestellmenge: 3000
SIZ342ADT-T1-GE3 SIZ342ADT-T1-GE3 Vishay Siliconix siz342adt.pdf Description: MOSFET 2N-CH 30V 15.7A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 12085 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.36 EUR
15+ 1.18 EUR
100+ 0.81 EUR
500+ 0.68 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 13
SIZ340ADT-T1-GE3 SIZ340ADT-T1-GE3 Vishay Siliconix siz340adt.pdf Description: MOSFET 2N-CH 30V 15.7A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, 1290pF @ 15V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V, 27.9nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.71 EUR
6000+ 0.67 EUR
9000+ 0.64 EUR
Mindestbestellmenge: 3000
SIZ340ADT-T1-GE3 SIZ340ADT-T1-GE3 Vishay Siliconix siz340adt.pdf Description: MOSFET 2N-CH 30V 15.7A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, 1290pF @ 15V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V, 27.9nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
auf Bestellung 16485 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.71 EUR
13+ 1.4 EUR
100+ 1.09 EUR
500+ 0.92 EUR
1000+ 0.75 EUR
Mindestbestellmenge: 11
SIHG47N60AEF-GE3 sihg47n60aef.pdf
SIHG47N60AEF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3576 pF @ 100 V
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.8 EUR
25+ 11.02 EUR
100+ 9.86 EUR
Mindestbestellmenge: 2
SI4425FDY-T1-GE3 si4425fdy.pdf
SI4425FDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12.7/18.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
auf Bestellung 11817 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.43 EUR
5000+ 0.41 EUR
Mindestbestellmenge: 2500
SIA483ADJ-T1-GE3 sia483adj.pdf
SIA483ADJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30-V PWRPAK SC-70
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
SIRA18BDP-T1-GE3 sira18bdp.pdf
SIRA18BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.26 EUR
Mindestbestellmenge: 3000
SIHP186N60EF-GE3 sihp186n60ef.pdf
SIHP186N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 18A TO220AB
Produkt ist nicht verfügbar
SIHP690N60E-GE3 sihp690n60e.pdf
SIHP690N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 6.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 100 V
auf Bestellung 1025 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+2.94 EUR
10+ 2.44 EUR
100+ 1.94 EUR
500+ 1.64 EUR
1000+ 1.39 EUR
Mindestbestellmenge: 6
SI4425FDY-T1-GE3 si4425fdy.pdf
SI4425FDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12.7/18.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
auf Bestellung 11817 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.13 EUR
19+ 0.98 EUR
100+ 0.68 EUR
500+ 0.56 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 16
SIA483ADJ-T1-GE3 sia483adj.pdf
SIA483ADJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30-V PWRPAK SC-70
auf Bestellung 5989 Stücke:
Lieferzeit 10-14 Tag (e)
SIRA18BDP-T1-GE3 sira18bdp.pdf
SIRA18BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
auf Bestellung 10131 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
27+ 0.65 EUR
100+ 0.46 EUR
500+ 0.36 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 24
SIR170DP-T1-RE3 sir170dp.pdf
SIR170DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 23.2A/95A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 50 V
auf Bestellung 7386 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.03 EUR
10+ 2.51 EUR
100+ 2 EUR
500+ 1.69 EUR
1000+ 1.43 EUR
Mindestbestellmenge: 6
DG9424EDN-T1-GE4 dg9424e.pdf
DG9424EDN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NC X 4 3OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 3Ohm
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 38pC
Crosstalk: -77dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
Produkt ist nicht verfügbar
DG9424EDN-T1-GE4 dg9424e.pdf
DG9424EDN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NC X 4 3OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 3Ohm
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 38pC
Crosstalk: -77dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
auf Bestellung 670 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.79 EUR
10+ 4.31 EUR
25+ 4.07 EUR
100+ 3.53 EUR
250+ 3.35 EUR
500+ 3.01 EUR
Mindestbestellmenge: 4
SI2393DS-T1-GE3 si2393ds.pdf
SI2393DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.1A/7.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 22.7mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.21 EUR
9000+ 0.19 EUR
Mindestbestellmenge: 3000
SIHD690N60E-GE3 sihd690n60e.pdf
SIHD690N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 6.4A DPAK
Produkt ist nicht verfügbar
SQS840CENW-T1_GE3 sqs840cenw.pdf
SQS840CENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 12A PPAK 1212-8W
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1031 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.43 EUR
Mindestbestellmenge: 3000
SQS423ENW-T1_GE3 sqs423enw.pdf
SQS423ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 16A PPAK 1212-8W
Produkt ist nicht verfügbar
SQS423ENW-T1_GE3 sqs423enw.pdf
SQS423ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 16A PPAK 1212-8W
auf Bestellung 2674 Stücke:
Lieferzeit 10-14 Tag (e)
SI2393DS-T1-GE3 si2393ds.pdf
SI2393DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.1A/7.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 22.7mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 15 V
auf Bestellung 11773 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.79 EUR
29+ 0.62 EUR
100+ 0.37 EUR
500+ 0.34 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 23
SQS840CENW-T1_GE3 sqs840cenw.pdf
SQS840CENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 12A PPAK 1212-8W
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1031 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4839 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.14 EUR
18+ 0.98 EUR
100+ 0.68 EUR
500+ 0.57 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 16
SIHF9630S-GE3 sihf9630.pdf
SIHF9630S-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar
SIHF520STRL-GE3 sihf520s.pdf
SIHF520STRL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 9.2A D2PAK
Produkt ist nicht verfügbar
SIHFR430ATR-GE3 sihfr430.pdf
SIHFR430ATR-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
SIHF540STRL-GE3 sihf540s.pdf
SIHF540STRL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Produkt ist nicht verfügbar
SIHFR9310-GE3 sihfr931.pdf
SIHFR9310-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 400V 1.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Produkt ist nicht verfügbar
SQD40N06-14L_T4GE3 sqd40n06-14l.pdf
SQD40N06-14L_T4GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 40A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2105 pF @ 25 V
Produkt ist nicht verfügbar
SIHFR9024TR-GE3 sihfr902.pdf
SIHFR9024TR-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Produkt ist nicht verfügbar
SIHFR9014-GE3 sihfr901.pdf
SIHFR9014-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.1A DPAK
Produkt ist nicht verfügbar
SIHFR430ATRR-GE3 sihfr430.pdf
SIHFR430ATRR-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
SIHF9640S-GE3 sihf9640.pdf
SIHF9640S-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
SIHFR420A-GE3 sihfr420.pdf
SIHFR420A-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 3.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Produkt ist nicht verfügbar
SIHF520STRR-GE3 sihf520s.pdf
SIHF520STRR-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 9.2A D2PAK
Produkt ist nicht verfügbar
SIHFR220-GE3 sihfr220.pdf
SIHFR220-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 4.8A DPAK
Produkt ist nicht verfügbar
SQD50P03-07-T4_GE3 sqd50p03.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 25 V
Produkt ist nicht verfügbar
SIHF530-GE3 91019.pdf
SIHF530-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A TO220AB
Produkt ist nicht verfügbar
SQJ431EP-T2_GE3 SQJ431EP.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 12A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 213mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SIHFR430ATRL-GE3 sihfr430.pdf
SIHFR430ATRL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
DG406DW-T1-E3 dg406.pdf
DG406DW-T1-E3
Hersteller: Vishay Siliconix
Description: IC MUX 16:1 100OHM 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 28-SOIC
Voltage - Supply, Single (V+): 7.5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 15pC
Multiplexer/Demultiplexer Circuit: 16:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 1
auf Bestellung 3541 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.11 EUR
10+ 10.02 EUR
25+ 9.56 EUR
100+ 8.3 EUR
250+ 7.92 EUR
500+ 7.23 EUR
Mindestbestellmenge: 2
IRFS9N60ATRRPBF sihs9n60.pdf
IRFS9N60ATRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 875 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.72 EUR
10+ 4.79 EUR
100+ 3.88 EUR
Mindestbestellmenge: 4
DG303BDY-T1-E3 dg300b.pdf
DG303BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SW DPST-NO/NCX2 50OHM 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 50Ohm
Supplier Device Package: 14-SOIC
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 8pC
Crosstalk: -74dB @ 500kHz
Switch Circuit: DPST - NO/NC
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
auf Bestellung 6382 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.93 EUR
10+ 6.22 EUR
25+ 5.88 EUR
100+ 5.1 EUR
250+ 4.83 EUR
500+ 4.6 EUR
Mindestbestellmenge: 3
IRF820STRRPBF sihf820s.pdf
IRF820STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 2.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 1546 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.92 EUR
10+ 2.43 EUR
100+ 1.94 EUR
Mindestbestellmenge: 7
SI4128DY-T1-E3 si4128dy-old.pdf
SI4128DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 10.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
auf Bestellung 9616 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+0.99 EUR
21+ 0.84 EUR
100+ 0.59 EUR
500+ 0.49 EUR
1000+ 0.42 EUR
Mindestbestellmenge: 18
IRFZ44STRLPBF sihfz44s.pdf
IRFZ44STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 1424 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.4 EUR
10+ 3.65 EUR
100+ 2.91 EUR
Mindestbestellmenge: 4
SIC478EVB-E sic47x.pdf
SIC478EVB-E
Hersteller: Vishay Siliconix
Description: SIC478 EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.8V ~ 24V
Voltage - Input: 4.5V ~ 55V
Current - Output: 5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC478
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
SIC477EVB-D sic47x.pdf
SIC477EVB-D
Hersteller: Vishay Siliconix
Description: SIC477 EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.8V ~ 24V
Voltage - Input: 4.5V ~ 55V
Current - Output: 8A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC477
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+63.89 EUR
SIC476EVB-D sic47x.pdf
SIC476EVB-D
Hersteller: Vishay Siliconix
Description: SIC476 EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.8V ~ 24V
Voltage - Input: 4.5V ~ 55V
Current - Output: 12A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC476
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+58.84 EUR
SIC479EVB-E sic47x.pdf
SIC479EVB-E
Hersteller: Vishay Siliconix
Description: SIC479 EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.8V ~ 24V
Voltage - Input: 4.5V ~ 55V
Current - Output: 3A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC479
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+63.89 EUR
DG507BEQ-T1-GE3 dg506b.pdf
DG507BEQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC MUX DUAL 8:1 300OHM 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 300Ohm
-3db Bandwidth: 217MHz
Supplier Device Package: 28-TSSOP
Voltage - Supply, Single (V+): 12V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 1pC
Crosstalk: -84dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 250ns, 200ns
Channel Capacitance (CS(off), CD(off)): 3pF, 17pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
auf Bestellung 4670 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.83 EUR
10+ 5.24 EUR
25+ 4.95 EUR
100+ 4.29 EUR
250+ 4.07 EUR
500+ 3.88 EUR
Mindestbestellmenge: 4
SISS32LDN-T1-GE3 siss32ldn.pdf
SISS32LDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 17.4A/63A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 40 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.79 EUR
6000+ 0.75 EUR
9000+ 0.72 EUR
Mindestbestellmenge: 3000
SIZ250DT-T1-GE3 siz250dt.pdf
SIZ250DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 14A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Part Status: Active
Produkt ist nicht verfügbar
SISA35DN-T1-GE3 sisa35dn.pdf
SISA35DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 10A/16A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Produkt ist nicht verfügbar
SISS32LDN-T1-GE3 siss32ldn.pdf
SISS32LDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 17.4A/63A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 40 V
auf Bestellung 23165 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.9 EUR
12+ 1.56 EUR
100+ 1.21 EUR
500+ 1.03 EUR
1000+ 0.84 EUR
Mindestbestellmenge: 10
SIZ250DT-T1-GE3 siz250dt.pdf
SIZ250DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 14A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Part Status: Active
auf Bestellung 287 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.92 EUR
12+ 1.56 EUR
100+ 1.22 EUR
Mindestbestellmenge: 10
SISA35DN-T1-GE3 sisa35dn.pdf
SISA35DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 10A/16A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 4773 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.81 EUR
28+ 0.63 EUR
100+ 0.38 EUR
500+ 0.35 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 22
SIHB17N80E-T1-GE3 sihb17n80e.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+4.89 EUR
Mindestbestellmenge: 800
SIHU5N80AE-GE3 sihu5n80ae.pdf
SIHU5N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 4.4A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V
auf Bestellung 2961 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.32 EUR
17+ 1.08 EUR
100+ 0.84 EUR
500+ 0.71 EUR
1000+ 0.7 EUR
Mindestbestellmenge: 14
SIHB17N80E-T1-GE3 sihb17n80e.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.1 EUR
10+ 6.8 EUR
100+ 5.5 EUR
Mindestbestellmenge: 3
SIZ342ADT-T1-GE3 siz342adt.pdf
SIZ342ADT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 15.7A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.52 EUR
6000+ 0.49 EUR
9000+ 0.45 EUR
Mindestbestellmenge: 3000
SIZ342ADT-T1-GE3 siz342adt.pdf
SIZ342ADT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 15.7A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 12085 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.36 EUR
15+ 1.18 EUR
100+ 0.81 EUR
500+ 0.68 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 13
SIZ340ADT-T1-GE3 siz340adt.pdf
SIZ340ADT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 15.7A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, 1290pF @ 15V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V, 27.9nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.71 EUR
6000+ 0.67 EUR
9000+ 0.64 EUR
Mindestbestellmenge: 3000
SIZ340ADT-T1-GE3 siz340adt.pdf
SIZ340ADT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 15.7A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, 1290pF @ 15V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V, 27.9nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
auf Bestellung 16485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.71 EUR
13+ 1.4 EUR
100+ 1.09 EUR
500+ 0.92 EUR
1000+ 0.75 EUR
Mindestbestellmenge: 11
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