SIZ250DT-T1-GE3 Vishay Semiconductors
auf Bestellung 34637 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.9 EUR |
| 10+ | 1.49 EUR |
| 100+ | 1.21 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.83 EUR |
| 3000+ | 0.78 EUR |
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Technische Details SIZ250DT-T1-GE3 Vishay Semiconductors
Description: MOSFET 2N-CH 60V 14A 8PWRPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.3W (Ta), 33W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V, Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-PowerPair® (3.3x3.3), Part Status: Active.
Weitere Produktangebote SIZ250DT-T1-GE3 nach Preis ab 1.22 EUR bis 1.92 EUR
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SIZ250DT-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET 2N-CH 60V 14A 8PWRPAIRPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.3W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® (3.3x3.3) Part Status: Active |
auf Bestellung 287 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIZ250DT-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 38A; Idm: 80A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 38A Pulsed drain current: 80A Power dissipation: 33W Gate-source voltage: ±20V On-state resistance: 18.87/18.11mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIZ250DT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 14A 8PWRPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.3W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® (3.3x3.3) Part Status: Active |
Produkt ist nicht verfügbar |
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| SIZ250DT-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 38A; Idm: 80A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 38A Pulsed drain current: 80A Power dissipation: 33W Gate-source voltage: ±20V On-state resistance: 18.87/18.11mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |