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SUD50N025-09BP-E3 Vishay Siliconix 73477.pdf Description: MOSFET N-CH D-S 25V TO252
Produkt ist nicht verfügbar
SUD50N03-06AP-T4E3 SUD50N03-06AP-T4E3 Vishay Siliconix 73540.pdf Description: MOSFET N-CH 30V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Produkt ist nicht verfügbar
SUP53P06-20-GE3 SUP53P06-20-GE3 Vishay Siliconix sup53p06-20.pdf Description: MOSFET P-CH 60V 9.2A/53A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Produkt ist nicht verfügbar
SYB85N10-10 Vishay Siliconix Description: MOSFET N-CH D-S 100V TO263
Produkt ist nicht verfügbar
U290 Vishay Siliconix U290,U291.pdf Description: JFET N-CH 30V 0.5W TO-206AC
Produkt ist nicht verfügbar
U290-E3 Vishay Siliconix U290,U291.pdf Description: JFET N-CH 30V 0.5W TO-206AC
Produkt ist nicht verfügbar
U291 Vishay Siliconix U290%2CU291.pdf Description: JFET N-CH 30V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-206AC (TO-52)
Power - Max: 500 mW
Resistance - RDS(On): 7 Ohms
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 mA @ 10 V
Produkt ist nicht verfügbar
U291-E3 Vishay Siliconix U290%2CU291.pdf Description: JFET N-CH 30V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-206AC (TO-52)
Power - Max: 500 mW
Resistance - RDS(On): 7 Ohms
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 mA @ 10 V
Produkt ist nicht verfügbar
U310-E3 Vishay Siliconix J;SST;U308 Series.pdf Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
Produkt ist nicht verfügbar
U430 Vishay Siliconix U430,U431.pdf Description: JFET 2N-CH 25V TO78-6
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
Produkt ist nicht verfügbar
U430-E3 Vishay Siliconix U430,U431.pdf Description: JFET 2N-CH 25V TO78-6
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
Produkt ist nicht verfügbar
U431 Vishay Siliconix U430,U431.pdf Description: JFET DUAL P-CH 25V TO-78
Produkt ist nicht verfügbar
U440 Vishay Siliconix U440.U441.pdf Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Produkt ist nicht verfügbar
U440-E3 Vishay Siliconix U440.U441.pdf Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Produkt ist nicht verfügbar
U441 Vishay Siliconix U440.U441.pdf Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Produkt ist nicht verfügbar
U441-E3 Vishay Siliconix U440.U441.pdf Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Produkt ist nicht verfügbar
VP0300B-E3 Vishay Siliconix Description: MOSFET P-CH 30V 0.32A TO-205
Produkt ist nicht verfügbar
VP0808B Vishay Siliconix VP0808B,L,M;%20VP1008B,L,M.pdf Description: MOSFET P-CH 80V 0.88A TO-205
Produkt ist nicht verfügbar
VP0808B-2 Vishay Siliconix VP0808B,L,M;%20VP1008B,L,M.pdf Description: MOSFET P-CH 80V 0.88A TO-205
Produkt ist nicht verfügbar
VP0808B-E3 VP0808B-E3 Vishay Siliconix VP0808B,L,M;%20VP1008B,L,M.pdf Description: MOSFET P-CH 80V 880MA TO39
Produkt ist nicht verfügbar
VP1008B Vishay Siliconix VP0808B,L,M;%20VP1008B,L,M.pdf Description: MOSFET P-CH 100V .79A TO-205
Produkt ist nicht verfügbar
VQ1001P Vishay Siliconix 70219.pdf Description: MOSFET 4N-CH 30V 0.83A 14DIP
Produkt ist nicht verfügbar
VQ1001P-2 Vishay Siliconix 70219.pdf Description: MOSFET 4N-CH 30V 0.83A 14DIP
Produkt ist nicht verfügbar
VQ1001P-E3 Vishay Siliconix 70219.pdf Description: MOSFET 4N-CH 30V 0.83A 14DIP
Produkt ist nicht verfügbar
VQ1004P Vishay Siliconix Description: MOSFET N-CH 60V 0.4A TO-205
Produkt ist nicht verfügbar
VQ1004P-2 Vishay Siliconix Description: MOSFET N-CH 60V 0.4A TO-205
Produkt ist nicht verfügbar
VQ1004P-E3 Vishay Siliconix Description: MOSFET N-CH 60V 0.4A TO-205
Produkt ist nicht verfügbar
VQ1006P Vishay Siliconix 70214.pdf Description: MOSFET 4N-CH 90V 0.4A 14DIP
Produkt ist nicht verfügbar
VQ1006P-2 Vishay Siliconix 70214.pdf Description: MOSFET 4N-CH 90V 0.4A 14DIP
Produkt ist nicht verfügbar
VQ1006P-E3 Vishay Siliconix 70214.pdf Description: MOSFET 4N-CH 90V 0.4A 14DIP
Produkt ist nicht verfügbar
VQ2001P Vishay Siliconix 70217.pdf Description: MOSFET 4P-CH 30V 0.6A 14DIP
Packaging: Tube
Configuration: 4 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 12V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Produkt ist nicht verfügbar
VQ2001P-2 Vishay Siliconix 70217.pdf Description: MOSFET 4P-CH 30V 0.6A 14DIP
Packaging: Tube
Package / Case: 14-DIP
Mounting Type: Through Hole
Configuration: 4 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 12V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 14-DIP
Produkt ist nicht verfügbar
VQ3001P-E3 Vishay Siliconix Description: MOSFET 2N/2P-CH 30V 0.85A
Packaging: Tube
Configuration: 2 N and 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 850mA, 600mA
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V, 150pF @ 15V
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 12V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Part Status: Obsolete
Produkt ist nicht verfügbar
SIP32419DN-T1-GE4 SIP32419DN-T1-GE4 Vishay Siliconix sip32429.pdf Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Features: Power Good, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 56mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.04 EUR
5000+ 1.96 EUR
Mindestbestellmenge: 2500
SIP32468DB-T2-GE1 SIP32468DB-T2-GE1 Vishay Siliconix sip32467.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIP32467DB-T2-GE1 SIP32467DB-T2-GE1 Vishay Siliconix sip32467.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIP32419DN-T1-GE4 SIP32419DN-T1-GE4 Vishay Siliconix sip32429.pdf Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Packaging: Cut Tape (CT)
Features: Power Good, Slew Rate Controlled, Status Flag
Package / Case: 10-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 56mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
auf Bestellung 9061 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.45 EUR
10+ 4 EUR
25+ 3.77 EUR
100+ 3.22 EUR
250+ 3.02 EUR
500+ 2.64 EUR
1000+ 2.19 EUR
Mindestbestellmenge: 4
SIP32468DB-T2-GE1 SIP32468DB-T2-GE1 Vishay Siliconix sip32467.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIP32467DB-T2-GE1 SIP32467DB-T2-GE1 Vishay Siliconix sip32467.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
SI3865DDV-T1-GE3 SI3865DDV-T1-GE3 Vishay Siliconix Si3865DDV.pdf Description: IC PWR SWITCH P-CHAN 1:1 6TSOP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Voltage - Load: 1.5V ~ 12V
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Part Status: Active
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.29 EUR
6000+ 0.28 EUR
9000+ 0.26 EUR
30000+ 0.25 EUR
Mindestbestellmenge: 3000
SI4403CDY-T1-GE3 SI4403CDY-T1-GE3 Vishay Siliconix si4403cd.pdf Description: MOSFET P-CH 20V 13.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.47 EUR
5000+ 0.45 EUR
12500+ 0.41 EUR
Mindestbestellmenge: 2500
SUD50P10-43L-GE3 SUD50P10-43L-GE3 Vishay Siliconix sud50p10.pdf Description: MOSFET P-CH 100V 37.1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.89 EUR
Mindestbestellmenge: 2000
SUP50N10-21P-GE3 SUP50N10-21P-GE3 Vishay Siliconix sup50n1021p.pdf Description: MOSFET N-CH 100V 50A TO220AB
Produkt ist nicht verfügbar
SIP12107DB SIP12107DB Vishay Siliconix 49994_pl0427.pdf Description: EVAL BOARD BUCK REG 5V 3A
Packaging: Box
Voltage - Input: 2.8V ~ 5.5V
Current - Output: 3A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiP12107
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
SIP12108DB SIP12108DB Vishay Siliconix sip12108.pdf Description: EVAL BOARD BUCK REG ADJ 5A
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 2.8V ~ 5.5V
Current - Output: 5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiP12108
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
SIC413DB SIC413DB Vishay Siliconix sic413.pdf Description: EVAL BOARD BUCK REG 26V 4A
Produkt ist nicht verfügbar
SIC401DB SIC401DB Vishay Siliconix sic401abcd.pdf Description: EVAL BOARD BUCK REG ADJ 15A
Produkt ist nicht verfügbar
SIC402DB SIC402DB Vishay Siliconix 49994_pl0427.pdf Description: EVAL BOARD BUCK REG ADJ 10A
Produkt ist nicht verfügbar
SIC403DB SIC403DB Vishay Siliconix sic401.pdf Description: EVAL BOARD BUCK REG ADJ 6A
Produkt ist nicht verfügbar
SI3865DDV-T1-GE3 SI3865DDV-T1-GE3 Vishay Siliconix Si3865DDV.pdf Description: IC PWR SWITCH P-CHAN 1:1 6TSOP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Voltage - Load: 1.5V ~ 12V
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Part Status: Active
auf Bestellung 90469 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.86 EUR
24+ 0.74 EUR
100+ 0.52 EUR
500+ 0.4 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 21
SUD06N10-225L-GE3 SUD06N10-225L-GE3 Vishay Siliconix sud06n10-225l-ge3.pdf Description: MOSFET N-CH 100V 6.5A TO252AA
Produkt ist nicht verfügbar
SIA923AEDJ-T1-GE3 SIA923AEDJ-T1-GE3 Vishay Siliconix SiA923AEDJ.pdf Description: MOSFET 2P-CH 20V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.35 EUR
6000+ 0.33 EUR
9000+ 0.31 EUR
Mindestbestellmenge: 3000
SIA446DJ-T1-GE3 SIA446DJ-T1-GE3 Vishay Siliconix sia446dj.pdf Description: MOSFET N-CH 150V 7.7A PPAK SC70
Produkt ist nicht verfügbar
SIA537EDJ-T1-GE3 SIA537EDJ-T1-GE3 Vishay Siliconix sia537edj.pdf Description: MOSFET N/P-CH 12V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.35 EUR
6000+ 0.34 EUR
Mindestbestellmenge: 3000
SI7121ADN-T1-GE3 SI7121ADN-T1-GE3 Vishay Siliconix si7121adn.pdf Description: MOSFET P-CH 30V 12A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.37 EUR
6000+ 0.36 EUR
9000+ 0.33 EUR
Mindestbestellmenge: 3000
SI8851EDB-T2-E1 SI8851EDB-T2-E1 Vishay Siliconix si8851edb.pdf Description: MOSFET P-CH 20V PWR MICRO FOOT
Produkt ist nicht verfügbar
SI3421DV-T1-GE3 SI3421DV-T1-GE3 Vishay Siliconix si3421dv.pdf Description: MOSFET P-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.27 EUR
6000+ 0.26 EUR
9000+ 0.24 EUR
Mindestbestellmenge: 3000
SIA923AEDJ-T1-GE3 SIA923AEDJ-T1-GE3 Vishay Siliconix SiA923AEDJ.pdf Description: MOSFET 2P-CH 20V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 24823 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
20+ 0.88 EUR
100+ 0.61 EUR
500+ 0.48 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 17
SIA446DJ-T1-GE3 SIA446DJ-T1-GE3 Vishay Siliconix sia446dj.pdf Description: MOSFET N-CH 150V 7.7A PPAK SC70
auf Bestellung 1554 Stücke:
Lieferzeit 10-14 Tag (e)
SIA537EDJ-T1-GE3 SIA537EDJ-T1-GE3 Vishay Siliconix sia537edj.pdf Description: MOSFET N/P-CH 12V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 8395 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
20+ 0.9 EUR
100+ 0.62 EUR
500+ 0.49 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 17
SUD50N025-09BP-E3 73477.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 25V TO252
Produkt ist nicht verfügbar
SUD50N03-06AP-T4E3 73540.pdf
SUD50N03-06AP-T4E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Produkt ist nicht verfügbar
SUP53P06-20-GE3 sup53p06-20.pdf
SUP53P06-20-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 9.2A/53A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Produkt ist nicht verfügbar
SYB85N10-10
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 100V TO263
Produkt ist nicht verfügbar
U290 U290,U291.pdf
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V 0.5W TO-206AC
Produkt ist nicht verfügbar
U290-E3 U290,U291.pdf
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V 0.5W TO-206AC
Produkt ist nicht verfügbar
U291 U290%2CU291.pdf
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-206AC (TO-52)
Power - Max: 500 mW
Resistance - RDS(On): 7 Ohms
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 mA @ 10 V
Produkt ist nicht verfügbar
U291-E3 U290%2CU291.pdf
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-206AC (TO-52)
Power - Max: 500 mW
Resistance - RDS(On): 7 Ohms
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 mA @ 10 V
Produkt ist nicht verfügbar
U310-E3 J;SST;U308 Series.pdf
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
Produkt ist nicht verfügbar
U430 U430,U431.pdf
Hersteller: Vishay Siliconix
Description: JFET 2N-CH 25V TO78-6
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
Produkt ist nicht verfügbar
U430-E3 U430,U431.pdf
Hersteller: Vishay Siliconix
Description: JFET 2N-CH 25V TO78-6
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
Produkt ist nicht verfügbar
U431 U430,U431.pdf
Hersteller: Vishay Siliconix
Description: JFET DUAL P-CH 25V TO-78
Produkt ist nicht verfügbar
U440 U440.U441.pdf
Hersteller: Vishay Siliconix
Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Produkt ist nicht verfügbar
U440-E3 U440.U441.pdf
Hersteller: Vishay Siliconix
Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Produkt ist nicht verfügbar
U441 U440.U441.pdf
Hersteller: Vishay Siliconix
Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Produkt ist nicht verfügbar
U441-E3 U440.U441.pdf
Hersteller: Vishay Siliconix
Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Produkt ist nicht verfügbar
VP0300B-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 0.32A TO-205
Produkt ist nicht verfügbar
VP0808B VP0808B,L,M;%20VP1008B,L,M.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 0.88A TO-205
Produkt ist nicht verfügbar
VP0808B-2 VP0808B,L,M;%20VP1008B,L,M.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 0.88A TO-205
Produkt ist nicht verfügbar
VP0808B-E3 VP0808B,L,M;%20VP1008B,L,M.pdf
VP0808B-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 880MA TO39
Produkt ist nicht verfügbar
VP1008B VP0808B,L,M;%20VP1008B,L,M.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V .79A TO-205
Produkt ist nicht verfügbar
VQ1001P 70219.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 4N-CH 30V 0.83A 14DIP
Produkt ist nicht verfügbar
VQ1001P-2 70219.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 4N-CH 30V 0.83A 14DIP
Produkt ist nicht verfügbar
VQ1001P-E3 70219.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 4N-CH 30V 0.83A 14DIP
Produkt ist nicht verfügbar
VQ1004P
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 0.4A TO-205
Produkt ist nicht verfügbar
VQ1004P-2
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 0.4A TO-205
Produkt ist nicht verfügbar
VQ1004P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 0.4A TO-205
Produkt ist nicht verfügbar
VQ1006P 70214.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 4N-CH 90V 0.4A 14DIP
Produkt ist nicht verfügbar
VQ1006P-2 70214.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 4N-CH 90V 0.4A 14DIP
Produkt ist nicht verfügbar
VQ1006P-E3 70214.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 4N-CH 90V 0.4A 14DIP
Produkt ist nicht verfügbar
VQ2001P 70217.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 4P-CH 30V 0.6A 14DIP
Packaging: Tube
Configuration: 4 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 12V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Produkt ist nicht verfügbar
VQ2001P-2 70217.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 4P-CH 30V 0.6A 14DIP
Packaging: Tube
Package / Case: 14-DIP
Mounting Type: Through Hole
Configuration: 4 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 12V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 14-DIP
Produkt ist nicht verfügbar
VQ3001P-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N/2P-CH 30V 0.85A
Packaging: Tube
Configuration: 2 N and 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 850mA, 600mA
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V, 150pF @ 15V
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 12V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Part Status: Obsolete
Produkt ist nicht verfügbar
SIP32419DN-T1-GE4 sip32429.pdf
SIP32419DN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Features: Power Good, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 56mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+2.04 EUR
5000+ 1.96 EUR
Mindestbestellmenge: 2500
SIP32468DB-T2-GE1 sip32467.pdf
SIP32468DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIP32467DB-T2-GE1 sip32467.pdf
SIP32467DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIP32419DN-T1-GE4 sip32429.pdf
SIP32419DN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Packaging: Cut Tape (CT)
Features: Power Good, Slew Rate Controlled, Status Flag
Package / Case: 10-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 56mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
auf Bestellung 9061 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.45 EUR
10+ 4 EUR
25+ 3.77 EUR
100+ 3.22 EUR
250+ 3.02 EUR
500+ 2.64 EUR
1000+ 2.19 EUR
Mindestbestellmenge: 4
SIP32468DB-T2-GE1 sip32467.pdf
SIP32468DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIP32467DB-T2-GE1 sip32467.pdf
SIP32467DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
SI3865DDV-T1-GE3 Si3865DDV.pdf
SI3865DDV-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 6TSOP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Voltage - Load: 1.5V ~ 12V
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Part Status: Active
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.29 EUR
6000+ 0.28 EUR
9000+ 0.26 EUR
30000+ 0.25 EUR
Mindestbestellmenge: 3000
SI4403CDY-T1-GE3 si4403cd.pdf
SI4403CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 13.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.47 EUR
5000+ 0.45 EUR
12500+ 0.41 EUR
Mindestbestellmenge: 2500
SUD50P10-43L-GE3 sud50p10.pdf
SUD50P10-43L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 37.1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+1.89 EUR
Mindestbestellmenge: 2000
SUP50N10-21P-GE3 sup50n1021p.pdf
SUP50N10-21P-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 50A TO220AB
Produkt ist nicht verfügbar
SIP12107DB 49994_pl0427.pdf
SIP12107DB
Hersteller: Vishay Siliconix
Description: EVAL BOARD BUCK REG 5V 3A
Packaging: Box
Voltage - Input: 2.8V ~ 5.5V
Current - Output: 3A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiP12107
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
SIP12108DB sip12108.pdf
SIP12108DB
Hersteller: Vishay Siliconix
Description: EVAL BOARD BUCK REG ADJ 5A
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 2.8V ~ 5.5V
Current - Output: 5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiP12108
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
SIC413DB sic413.pdf
SIC413DB
Hersteller: Vishay Siliconix
Description: EVAL BOARD BUCK REG 26V 4A
Produkt ist nicht verfügbar
SIC401DB sic401abcd.pdf
SIC401DB
Hersteller: Vishay Siliconix
Description: EVAL BOARD BUCK REG ADJ 15A
Produkt ist nicht verfügbar
SIC402DB 49994_pl0427.pdf
SIC402DB
Hersteller: Vishay Siliconix
Description: EVAL BOARD BUCK REG ADJ 10A
Produkt ist nicht verfügbar
SIC403DB sic401.pdf
SIC403DB
Hersteller: Vishay Siliconix
Description: EVAL BOARD BUCK REG ADJ 6A
Produkt ist nicht verfügbar
SI3865DDV-T1-GE3 Si3865DDV.pdf
SI3865DDV-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 6TSOP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Voltage - Load: 1.5V ~ 12V
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Part Status: Active
auf Bestellung 90469 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.86 EUR
24+ 0.74 EUR
100+ 0.52 EUR
500+ 0.4 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 21
SUD06N10-225L-GE3 sud06n10-225l-ge3.pdf
SUD06N10-225L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.5A TO252AA
Produkt ist nicht verfügbar
SIA923AEDJ-T1-GE3 SiA923AEDJ.pdf
SIA923AEDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.35 EUR
6000+ 0.33 EUR
9000+ 0.31 EUR
Mindestbestellmenge: 3000
SIA446DJ-T1-GE3 sia446dj.pdf
SIA446DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 7.7A PPAK SC70
Produkt ist nicht verfügbar
SIA537EDJ-T1-GE3 sia537edj.pdf
SIA537EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.35 EUR
6000+ 0.34 EUR
Mindestbestellmenge: 3000
SI7121ADN-T1-GE3 si7121adn.pdf
SI7121ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.37 EUR
6000+ 0.36 EUR
9000+ 0.33 EUR
Mindestbestellmenge: 3000
SI8851EDB-T2-E1 si8851edb.pdf
SI8851EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V PWR MICRO FOOT
Produkt ist nicht verfügbar
SI3421DV-T1-GE3 si3421dv.pdf
SI3421DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.27 EUR
6000+ 0.26 EUR
9000+ 0.24 EUR
Mindestbestellmenge: 3000
SIA923AEDJ-T1-GE3 SiA923AEDJ.pdf
SIA923AEDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 24823 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.04 EUR
20+ 0.88 EUR
100+ 0.61 EUR
500+ 0.48 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 17
SIA446DJ-T1-GE3 sia446dj.pdf
SIA446DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 7.7A PPAK SC70
auf Bestellung 1554 Stücke:
Lieferzeit 10-14 Tag (e)
SIA537EDJ-T1-GE3 sia537edj.pdf
SIA537EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 8395 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.06 EUR
20+ 0.9 EUR
100+ 0.62 EUR
500+ 0.49 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 17
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