Technische Details VQ2001P-2 Vishay
Description: MOSFET 4P-CH 30V 0.6A 14DIP, Packaging: Tube, Package / Case: 14-DIP, Mounting Type: Through Hole, Configuration: 4 P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 600mA, Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V, Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 12V, Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: 14-DIP.
Weitere Produktangebote VQ2001P-2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| VQ2001P-2 | Hersteller : Vishay Siliconix |
 Description: MOSFET 4P-CH 30V 0.6A 14DIPPackaging: Tube Package / Case: 14-DIP Mounting Type: Through Hole Configuration: 4 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 600mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 12V Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: 14-DIP |
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