SIA537EDJ-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N/P-CH 12V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.35 EUR |
| 6000+ | 0.34 EUR |
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Technische Details SIA537EDJ-T1-GE3 Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 7.8W, Drain to Source Voltage (Vdss): 12V, 20V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V, Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Active.
Weitere Produktangebote SIA537EDJ-T1-GE3 nach Preis ab 0.31 EUR bis 1.06 EUR
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SIA537EDJ-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs -20V Vds 8V Vgs PowerPAK SC-70 |
auf Bestellung 8909 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA537EDJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 12V 4.5A SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7.8W Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active |
auf Bestellung 8395 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA537EDJ-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N/P-CH 12V/20V 4.5A 6-Pin PowerPAK SC-70 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIA537EDJ-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-20V; 4.5/-4.5A Kind of package: reel; tape Type of transistor: N/P-MOSFET Power dissipation: 7.8W Polarisation: unipolar Gate charge: 25/16nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Drain-source voltage: 12/-20V Drain current: 4.5/-4.5A On-state resistance: 165/104mΩ Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIA537EDJ-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-20V; 4.5/-4.5A Kind of package: reel; tape Type of transistor: N/P-MOSFET Power dissipation: 7.8W Polarisation: unipolar Gate charge: 25/16nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Drain-source voltage: 12/-20V Drain current: 4.5/-4.5A On-state resistance: 165/104mΩ |
Produkt ist nicht verfügbar |