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TP65H050WS TP65H050WS Transphorm datasheet-tp65h050ws-650v-gan-fet Description: GANFET N-CH 650V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 315 Stücke:
Lieferzeit 10-14 Tag (e)
1+29.11 EUR
30+ 23.57 EUR
120+ 22.18 EUR
TP65H050WS TP65H050WS Transphorm tp65h050ws_v2-1539038.pdf MOSFET 650V, 50mOhm
auf Bestellung 342 Stücke:
Lieferzeit 10-14 Tag (e)
1+29.09 EUR
10+ 26.73 EUR
120+ 23.06 EUR
510+ 20.08 EUR
1020+ 19.15 EUR
2520+ 18.67 EUR
TP65H050WSQA TP65H050WSQA Transphorm TP65H050WSQA_v3-1665088.pdf GaN FETs 650V, 50mOhm
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.05 EUR
10+ 27.58 EUR
30+ 25.13 EUR
60+ 23.67 EUR
120+ 23.65 EUR
270+ 21.47 EUR
510+ 21.44 EUR
TP65H050WSQA TP65H050WSQA Transphorm datasheet-tp65h050wsqa Description: GANFET N-CH 650V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
1+30.45 EUR
10+ 26.83 EUR
TP65H070G4LSGB-TR TP65H070G4LSGB-TR Transphorm tp65h070g4lsgb_1v5_1-3179786.pdf MOSFETs GAN FET 650V 29A QFN8x8
auf Bestellung 2891 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.67 EUR
10+ 15.15 EUR
25+ 13.73 EUR
100+ 12.62 EUR
250+ 11.88 EUR
500+ 11.14 EUR
1000+ 10.56 EUR
TP65H070G4LSGB-TR TP65H070G4LSGB-TR TRANSPHORM 4156852.pdf Description: TRANSPHORM - TP65H070G4LSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 8.4 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 8.4nC
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.085ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H070G4LSGB-TR TP65H070G4LSGB-TR Transphorm datasheet-tp65h070g4lsgb Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 700µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Produkt ist nicht verfügbar
TP65H070G4LSGB-TR TP65H070G4LSGB-TR TRANSPHORM 4156852.pdf Description: TRANSPHORM - TP65H070G4LSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 8.4 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H070G4LSGB-TR TP65H070G4LSGB-TR Transphorm datasheet-tp65h070g4lsgb Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 700µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 2854 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.48 EUR
10+ 14.98 EUR
100+ 12.48 EUR
500+ 11.01 EUR
1000+ 9.91 EUR
Mindestbestellmenge: 2
TP65H070G4LSG-TR TP65H070G4LSG-TR Transphorm datasheet-tp65h070g4lsg Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Produkt ist nicht verfügbar
TP65H070G4LSG-TR TP65H070G4LSG-TR Transphorm datasheet-tp65h070g4lsg Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 2608 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.58 EUR
10+ 13.35 EUR
100+ 11.12 EUR
500+ 9.81 EUR
1000+ 8.83 EUR
Mindestbestellmenge: 2
TP65H070G4LSG-TR TP65H070G4LSG-TR Transphorm TP65H070G4LSG_1v1-3244312.pdf MOSFETs GAN FET 650V 29A QFN8x8
auf Bestellung 2756 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.75 EUR
10+ 13.48 EUR
25+ 12.25 EUR
100+ 11.25 EUR
250+ 10.6 EUR
500+ 9.93 EUR
1000+ 8.92 EUR
TP65H070G4LSG-TR TP65H070G4LSG-TR TRANSPHORM 4156851.pdf Description: TRANSPHORM - TP65H070G4LSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 8.4 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
auf Bestellung 748 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H070G4LSG-TR TP65H070G4LSG-TR TRANSPHORM 4156851.pdf Description: TRANSPHORM - TP65H070G4LSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 8.4 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 8.4nC
Bauform - Transistor: PQFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.085ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 748 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H070G4PS TP65H070G4PS TRANSPHORM 4156853.pdf Description: TRANSPHORM - TP65H070G4PS - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 9 nC, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 9nC
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.085ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 390 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H070G4PS TP65H070G4PS Transphorm datasheet-tp65h070g4ps Description: GANFET N-CH 650V 29A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 700µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V
auf Bestellung 897 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.01 EUR
50+ 11.19 EUR
100+ 10.01 EUR
500+ 8.83 EUR
Mindestbestellmenge: 2
TP65H070G4PS TP65H070G4PS Transphorm tp65h070g4ps_2v1-3177238.pdf MOSFETs GAN FET 650V 29A TO220
auf Bestellung 1103 Stücke:
Lieferzeit 10-14 Tag (e)
1+14.17 EUR
10+ 12.5 EUR
50+ 10.61 EUR
100+ 10.12 EUR
250+ 9.5 EUR
500+ 8.92 EUR
1000+ 8.03 EUR
TP65H070G4QS-TR TP65H070G4QS-TR TRANSPHORM 4156854.pdf Description: TRANSPHORM - TP65H070G4QS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 8.4 nC, TOLL, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 8.4nC
Bauform - Transistor: TOLL
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.085ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H070G4QS-TR TP65H070G4QS-TR Transphorm datasheet-tp65h070g4qs Description: 650 V 29 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Produkt ist nicht verfügbar
TP65H070G4QS-TR TP65H070G4QS-TR Transphorm TP65H070G4QS_1v0_1-3388047.pdf GaN FETs GaN FET 650 V 29A TOLL
Produkt ist nicht verfügbar
TP65H070G4QS-TR TP65H070G4QS-TR Transphorm datasheet-tp65h070g4qs Description: 650 V 29 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.19 EUR
10+ 12.15 EUR
100+ 10.13 EUR
500+ 8.94 EUR
1000+ 8.04 EUR
Mindestbestellmenge: 2
TP65H070G4QS-TR TP65H070G4QS-TR TRANSPHORM 4156854.pdf Description: TRANSPHORM - TP65H070G4QS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 8.4 nC, TOLL, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H070G4RS-TR TP65H070G4RS-TR Transphorm datasheet-tp65h070g4rs Description: 650 V 29 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLT
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V
auf Bestellung 1982 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.59 EUR
10+ 12.49 EUR
100+ 10.41 EUR
500+ 9.19 EUR
1000+ 8.27 EUR
Mindestbestellmenge: 2
TP65H070G4RS-TR TP65H070G4RS-TR Transphorm tp65h070g4rs_1v3_1-3395631.pdf MOSFETs GaN FET 650 V 29A TOLT
auf Bestellung 1945 Stücke:
Lieferzeit 10-14 Tag (e)
1+14.47 EUR
10+ 12.41 EUR
25+ 11.25 EUR
100+ 10.33 EUR
250+ 9.72 EUR
500+ 9.12 EUR
1000+ 8.2 EUR
TP65H070G4RS-TR TP65H070G4RS-TR Transphorm datasheet-tp65h070g4rs Description: 650 V 29 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLT
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V
Produkt ist nicht verfügbar
TP65H070LDG TP65H070LDG Transphorm datasheet-tp65h070l-650v-gan-fet Description: GANFET N-CH 650V 25A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Produkt ist nicht verfügbar
TP65H070LDG-TR TP65H070LDG-TR Transphorm datasheet-tp65h070l-650v-gan-fet Description: 650 V 25 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
500+14.02 EUR
1000+ 12.86 EUR
Mindestbestellmenge: 500
TP65H070LDG-TR TP65H070LDG-TR Transphorm datasheet-tp65h070l-650v-gan-fet Description: 650 V 25 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 1650 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.29 EUR
10+ 17.89 EUR
100+ 15.47 EUR
TP65H070LDG-TR TP65H070LDG-TR Transphorm TP65H070L_4v0-2065507.pdf MOSFETs 227-TP65H070LSG-TR
auf Bestellung 377 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.66 EUR
10+ 18.2 EUR
25+ 17.71 EUR
50+ 16.72 EUR
100+ 15.84 EUR
500+ 13.45 EUR
1000+ 13.08 EUR
TP65H070LSG TP65H070LSG Transphorm datasheet-tp65h070l-650v-gan-fet Description: GANFET N-CH 650V 25A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Produkt ist nicht verfügbar
TP65H070LSG-TR TP65H070LSG-TR Transphorm TP65H070L_4v0-2065507.pdf MOSFETs GAN FET 650V 25A PQFN88
auf Bestellung 568 Stücke:
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1+14.52 EUR
10+ 12.8 EUR
100+ 12.65 EUR
TP65H070LSG-TR TP65H070LSG-TR Transphorm datasheet-tp65h070l-650v-gan-fet Description: GANFET N-CH 650V 25A PQFN88
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 11500 Stücke:
Lieferzeit 10-14 Tag (e)
500+12.04 EUR
Mindestbestellmenge: 500
TP65H070LSG-TR TP65H070LSG-TR Transphorm datasheet-tp65h070l-650v-gan-fet Description: GANFET N-CH 650V 25A PQFN88
Packaging: Cut Tape (CT)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 12286 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.36 EUR
10+ 12.65 EUR
100+ 12.04 EUR
Mindestbestellmenge: 2
TP65H150BG4JSG TP65H150BG4JSG Transphorm TP65H150BG4JSG_3v3-3177260.pdf MOSFETs GAN FET 650V 13A QFN5x6
Produkt ist nicht verfügbar
TP65H150BG4JSG-TR TP65H150BG4JSG-TR TRANSPHORM 4156856.pdf Description: TRANSPHORM - TP65H150BG4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 16 A, 0.18 ohm, 4.9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 4.9nC
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.18ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 938 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H150BG4JSG-TR TP65H150BG4JSG-TR Transphorm datasheet-tp65h150bg4jsg Description: GANFET N-CH 650V 13A QFN5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 6V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
Produkt ist nicht verfügbar
TP65H150BG4JSG-TR TP65H150BG4JSG-TR TRANSPHORM 4156856.pdf Description: TRANSPHORM - TP65H150BG4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 16 A, 0.18 ohm, 4.9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
auf Bestellung 938 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H150BG4JSG-TR TP65H150BG4JSG-TR Transphorm datasheet-tp65h150bg4jsg Description: GANFET N-CH 650V 13A QFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 6V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
auf Bestellung 3791 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.44 EUR
10+ 5.4 EUR
100+ 4.37 EUR
500+ 3.89 EUR
1000+ 3.33 EUR
2000+ 3.13 EUR
Mindestbestellmenge: 3
TP65H150G4LSG TP65H150G4LSG Transphorm TP65H150G4LSG_3v4-2900669.pdf MOSFETs GAN FET 650V 13A TO220
auf Bestellung 2163 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.06 EUR
10+ 6.99 EUR
25+ 6.78 EUR
100+ 5.7 EUR
250+ 5.53 EUR
500+ 4.96 EUR
1000+ 4.22 EUR
TP65H150G4LSG TP65H150G4LSG Transphorm datasheet-tp65h150g4lsg-650v-gan-fet Description: GAN FET N-CH 650V PQFN
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
auf Bestellung 2774 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.22 EUR
10+ 7.38 EUR
100+ 6.05 EUR
500+ 5.15 EUR
1000+ 4.34 EUR
Mindestbestellmenge: 3
TP65H150G4LSG TP65H150G4LSG Transphorm datasheet-tp65h150g4lsg-650v-gan-fet Description: GAN FET N-CH 650V PQFN
Packaging: Tray
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
Produkt ist nicht verfügbar
TP65H150G4LSG-TR TP65H150G4LSG-TR Transphorm TP65H150G4LSG_3v1-2900669.pdf MOSFET
Produkt ist nicht verfügbar
TP65H150G4LSG-TR TP65H150G4LSG-TR Transphorm datasheet-tp65h150g4lsg-650v-gan-fet Description: 650 V 13 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+3.81 EUR
Mindestbestellmenge: 3000
TP65H150G4LSG-TR TP65H150G4LSG-TR Transphorm datasheet-tp65h150g4lsg-650v-gan-fet Description: 650 V 13 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
auf Bestellung 5887 Stücke:
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3+7.83 EUR
10+ 6.57 EUR
100+ 5.32 EUR
500+ 4.73 EUR
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Mindestbestellmenge: 3
TP65H150G4PS TP65H150G4PS Transphorm TP65H150G4PS_2v1-2900652.pdf MOSFETs GAN FET 650V 13A TO220
auf Bestellung 683 Stücke:
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1+10.82 EUR
10+ 9.28 EUR
50+ 8.78 EUR
100+ 7.73 EUR
250+ 7.46 EUR
500+ 6.81 EUR
1000+ 5.86 EUR
TP65H150G4PS TP65H150G4PS TRANSPHORM 4156857.pdf Description: TRANSPHORM - TP65H150G4PS - Galliumnitrid (GaN)-Transistor, 650 V, 16 A, 0.18 ohm, 8 nC, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 8nC
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.18ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 1943 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H150LSG Transphorm TP65H150LSG_v1.pdf Description: GANFET N-CH 650V 15A 3PQFN
Produkt ist nicht verfügbar
TP65H300G4JSGB TP65H300G4JSGB Transphorm TP65H300G4JSGB_1V0-3244319.pdf MOSFETs Gan FET 650 V 6.5 A PQFN56
auf Bestellung 3000 Stücke:
Lieferzeit 122-126 Tag (e)
1+5.26 EUR
10+ 4.4 EUR
25+ 4.15 EUR
100+ 3.57 EUR
250+ 3.38 EUR
500+ 3.15 EUR
1000+ 2.71 EUR
TP65H300G4JSGB-TR TP65H300G4JSGB-TR Transphorm TP65H300G4JSGB_1V0-3244319.pdf MOSFETs GAN FET 650V 9.2A QFN5x6
auf Bestellung 3922 Stücke:
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1+4.79 EUR
10+ 3.98 EUR
100+ 3.15 EUR
500+ 2.68 EUR
1000+ 2.57 EUR
TP65H300G4JSGB-TR TP65H300G4JSGB-TR TRANSPHORM 4156858.pdf Description: TRANSPHORM - TP65H300G4JSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 9.2 A, 0.312 ohm, 3.5 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H300G4JSGB-TR TP65H300G4JSGB-TR TRANSPHORM 4156858.pdf Description: TRANSPHORM - TP65H300G4JSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 9.2 A, 0.312 ohm, 3.5 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 9.2A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 3.5nC
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.312ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H300G4JSGB-TR TP65H300G4JSGB-TR Transphorm datasheet-tp65h300g4jsgb Description: GANFET N-CH 650V 9.2A QFN5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 41.6W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
Produkt ist nicht verfügbar
TP65H300G4JSGB-TR TP65H300G4JSGB-TR Transphorm datasheet-tp65h300g4jsgb Description: GANFET N-CH 650V 9.2A QFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 41.6W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
auf Bestellung 3974 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.68 EUR
10+ 3.89 EUR
100+ 3.1 EUR
500+ 2.62 EUR
1000+ 2.22 EUR
2000+ 2.11 EUR
Mindestbestellmenge: 4
TP65H300G4LSG TP65H300G4LSG Transphorm TP65H300G4LSG_v1.2-2.pdf Description: GANFET N-CH 650V 6.5A 3PQFN
auf Bestellung 139 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.15 EUR
10+ 6.42 EUR
100+ 5.26 EUR
Mindestbestellmenge: 3
TP65H300G4LSGB TP65H300G4LSGB Transphorm TP65H300G4LSGB_0v1-3388028.pdf MOSFETs Gan FET 650 V 6.5 A PQFN88
auf Bestellung 3000 Stücke:
Lieferzeit 122-126 Tag (e)
1+5.03 EUR
10+ 4.22 EUR
25+ 3.98 EUR
100+ 3.41 EUR
250+ 3.22 EUR
500+ 3.03 EUR
1000+ 2.6 EUR
TP65H300G4LSGB-TR TP65H300G4LSGB-TR Transphorm datasheet-tp65h300g4lsgb Description: GANFET N-CH 650V 6.5A QFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
Produkt ist nicht verfügbar
TP65H300G4LSGB-TR TP65H300G4LSGB-TR TRANSPHORM 4156860.pdf Description: TRANSPHORM - TP65H300G4LSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 5 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 6.5A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 5nC
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.312ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H300G4LSGB-TR TP65H300G4LSGB-TR Transphorm datasheet-tp65h300g4lsgb Description: GANFET N-CH 650V 6.5A QFN8X8
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
auf Bestellung 2968 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.98 EUR
10+ 4.18 EUR
100+ 3.39 EUR
500+ 3.01 EUR
1000+ 2.58 EUR
Mindestbestellmenge: 4
TP65H300G4LSGB-TR TP65H300G4LSGB-TR Transphorm TP65H300G4LSGB_0v1-3359785.pdf MOSFETs GAN FET 650V 6.5A QFN8x8
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.03 EUR
10+ 4.22 EUR
25+ 3.98 EUR
100+ 3.41 EUR
250+ 3.22 EUR
500+ 3.03 EUR
1000+ 2.6 EUR
TP65H300G4LSGB-TR TP65H300G4LSGB-TR TRANSPHORM 4156860.pdf Description: TRANSPHORM - TP65H300G4LSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 5 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H050WS datasheet-tp65h050ws-650v-gan-fet
TP65H050WS
Hersteller: Transphorm
Description: GANFET N-CH 650V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 315 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+29.11 EUR
30+ 23.57 EUR
120+ 22.18 EUR
TP65H050WS tp65h050ws_v2-1539038.pdf
TP65H050WS
Hersteller: Transphorm
MOSFET 650V, 50mOhm
auf Bestellung 342 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+29.09 EUR
10+ 26.73 EUR
120+ 23.06 EUR
510+ 20.08 EUR
1020+ 19.15 EUR
2520+ 18.67 EUR
TP65H050WSQA TP65H050WSQA_v3-1665088.pdf
TP65H050WSQA
Hersteller: Transphorm
GaN FETs 650V, 50mOhm
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+31.05 EUR
10+ 27.58 EUR
30+ 25.13 EUR
60+ 23.67 EUR
120+ 23.65 EUR
270+ 21.47 EUR
510+ 21.44 EUR
TP65H050WSQA datasheet-tp65h050wsqa
TP65H050WSQA
Hersteller: Transphorm
Description: GANFET N-CH 650V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+30.45 EUR
10+ 26.83 EUR
TP65H070G4LSGB-TR tp65h070g4lsgb_1v5_1-3179786.pdf
TP65H070G4LSGB-TR
Hersteller: Transphorm
MOSFETs GAN FET 650V 29A QFN8x8
auf Bestellung 2891 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+17.67 EUR
10+ 15.15 EUR
25+ 13.73 EUR
100+ 12.62 EUR
250+ 11.88 EUR
500+ 11.14 EUR
1000+ 10.56 EUR
TP65H070G4LSGB-TR 4156852.pdf
TP65H070G4LSGB-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H070G4LSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 8.4 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 8.4nC
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.085ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H070G4LSGB-TR datasheet-tp65h070g4lsgb
TP65H070G4LSGB-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 700µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Produkt ist nicht verfügbar
TP65H070G4LSGB-TR 4156852.pdf
TP65H070G4LSGB-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H070G4LSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 8.4 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H070G4LSGB-TR datasheet-tp65h070g4lsgb
TP65H070G4LSGB-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 700µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 2854 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+17.48 EUR
10+ 14.98 EUR
100+ 12.48 EUR
500+ 11.01 EUR
1000+ 9.91 EUR
Mindestbestellmenge: 2
TP65H070G4LSG-TR datasheet-tp65h070g4lsg
TP65H070G4LSG-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Produkt ist nicht verfügbar
TP65H070G4LSG-TR datasheet-tp65h070g4lsg
TP65H070G4LSG-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 2608 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+15.58 EUR
10+ 13.35 EUR
100+ 11.12 EUR
500+ 9.81 EUR
1000+ 8.83 EUR
Mindestbestellmenge: 2
TP65H070G4LSG-TR TP65H070G4LSG_1v1-3244312.pdf
TP65H070G4LSG-TR
Hersteller: Transphorm
MOSFETs GAN FET 650V 29A QFN8x8
auf Bestellung 2756 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+15.75 EUR
10+ 13.48 EUR
25+ 12.25 EUR
100+ 11.25 EUR
250+ 10.6 EUR
500+ 9.93 EUR
1000+ 8.92 EUR
TP65H070G4LSG-TR 4156851.pdf
TP65H070G4LSG-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H070G4LSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 8.4 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
auf Bestellung 748 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H070G4LSG-TR 4156851.pdf
TP65H070G4LSG-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H070G4LSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 8.4 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 8.4nC
Bauform - Transistor: PQFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.085ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 748 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H070G4PS 4156853.pdf
TP65H070G4PS
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H070G4PS - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 9 nC, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 9nC
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.085ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 390 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H070G4PS datasheet-tp65h070g4ps
TP65H070G4PS
Hersteller: Transphorm
Description: GANFET N-CH 650V 29A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 700µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V
auf Bestellung 897 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.01 EUR
50+ 11.19 EUR
100+ 10.01 EUR
500+ 8.83 EUR
Mindestbestellmenge: 2
TP65H070G4PS tp65h070g4ps_2v1-3177238.pdf
TP65H070G4PS
Hersteller: Transphorm
MOSFETs GAN FET 650V 29A TO220
auf Bestellung 1103 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+14.17 EUR
10+ 12.5 EUR
50+ 10.61 EUR
100+ 10.12 EUR
250+ 9.5 EUR
500+ 8.92 EUR
1000+ 8.03 EUR
TP65H070G4QS-TR 4156854.pdf
TP65H070G4QS-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H070G4QS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 8.4 nC, TOLL, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 8.4nC
Bauform - Transistor: TOLL
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.085ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H070G4QS-TR datasheet-tp65h070g4qs
TP65H070G4QS-TR
Hersteller: Transphorm
Description: 650 V 29 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Produkt ist nicht verfügbar
TP65H070G4QS-TR TP65H070G4QS_1v0_1-3388047.pdf
TP65H070G4QS-TR
Hersteller: Transphorm
GaN FETs GaN FET 650 V 29A TOLL
Produkt ist nicht verfügbar
TP65H070G4QS-TR datasheet-tp65h070g4qs
TP65H070G4QS-TR
Hersteller: Transphorm
Description: 650 V 29 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.19 EUR
10+ 12.15 EUR
100+ 10.13 EUR
500+ 8.94 EUR
1000+ 8.04 EUR
Mindestbestellmenge: 2
TP65H070G4QS-TR 4156854.pdf
TP65H070G4QS-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H070G4QS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 8.4 nC, TOLL, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H070G4RS-TR datasheet-tp65h070g4rs
TP65H070G4RS-TR
Hersteller: Transphorm
Description: 650 V 29 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLT
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V
auf Bestellung 1982 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.59 EUR
10+ 12.49 EUR
100+ 10.41 EUR
500+ 9.19 EUR
1000+ 8.27 EUR
Mindestbestellmenge: 2
TP65H070G4RS-TR tp65h070g4rs_1v3_1-3395631.pdf
TP65H070G4RS-TR
Hersteller: Transphorm
MOSFETs GaN FET 650 V 29A TOLT
auf Bestellung 1945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+14.47 EUR
10+ 12.41 EUR
25+ 11.25 EUR
100+ 10.33 EUR
250+ 9.72 EUR
500+ 9.12 EUR
1000+ 8.2 EUR
TP65H070G4RS-TR datasheet-tp65h070g4rs
TP65H070G4RS-TR
Hersteller: Transphorm
Description: 650 V 29 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLT
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V
Produkt ist nicht verfügbar
TP65H070LDG datasheet-tp65h070l-650v-gan-fet
TP65H070LDG
Hersteller: Transphorm
Description: GANFET N-CH 650V 25A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Produkt ist nicht verfügbar
TP65H070LDG-TR datasheet-tp65h070l-650v-gan-fet
TP65H070LDG-TR
Hersteller: Transphorm
Description: 650 V 25 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
500+14.02 EUR
1000+ 12.86 EUR
Mindestbestellmenge: 500
TP65H070LDG-TR datasheet-tp65h070l-650v-gan-fet
TP65H070LDG-TR
Hersteller: Transphorm
Description: 650 V 25 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 1650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+20.29 EUR
10+ 17.89 EUR
100+ 15.47 EUR
TP65H070LDG-TR TP65H070L_4v0-2065507.pdf
TP65H070LDG-TR
Hersteller: Transphorm
MOSFETs 227-TP65H070LSG-TR
auf Bestellung 377 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+20.66 EUR
10+ 18.2 EUR
25+ 17.71 EUR
50+ 16.72 EUR
100+ 15.84 EUR
500+ 13.45 EUR
1000+ 13.08 EUR
TP65H070LSG datasheet-tp65h070l-650v-gan-fet
TP65H070LSG
Hersteller: Transphorm
Description: GANFET N-CH 650V 25A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Produkt ist nicht verfügbar
TP65H070LSG-TR TP65H070L_4v0-2065507.pdf
TP65H070LSG-TR
Hersteller: Transphorm
MOSFETs GAN FET 650V 25A PQFN88
auf Bestellung 568 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+14.52 EUR
10+ 12.8 EUR
100+ 12.65 EUR
TP65H070LSG-TR datasheet-tp65h070l-650v-gan-fet
TP65H070LSG-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 25A PQFN88
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 11500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
500+12.04 EUR
Mindestbestellmenge: 500
TP65H070LSG-TR datasheet-tp65h070l-650v-gan-fet
TP65H070LSG-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 25A PQFN88
Packaging: Cut Tape (CT)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 12286 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.36 EUR
10+ 12.65 EUR
100+ 12.04 EUR
Mindestbestellmenge: 2
TP65H150BG4JSG TP65H150BG4JSG_3v3-3177260.pdf
TP65H150BG4JSG
Hersteller: Transphorm
MOSFETs GAN FET 650V 13A QFN5x6
Produkt ist nicht verfügbar
TP65H150BG4JSG-TR 4156856.pdf
TP65H150BG4JSG-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H150BG4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 16 A, 0.18 ohm, 4.9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 4.9nC
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.18ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 938 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H150BG4JSG-TR datasheet-tp65h150bg4jsg
TP65H150BG4JSG-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 13A QFN5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 6V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
Produkt ist nicht verfügbar
TP65H150BG4JSG-TR 4156856.pdf
TP65H150BG4JSG-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H150BG4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 16 A, 0.18 ohm, 4.9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
auf Bestellung 938 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H150BG4JSG-TR datasheet-tp65h150bg4jsg
TP65H150BG4JSG-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 13A QFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 6V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
auf Bestellung 3791 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.44 EUR
10+ 5.4 EUR
100+ 4.37 EUR
500+ 3.89 EUR
1000+ 3.33 EUR
2000+ 3.13 EUR
Mindestbestellmenge: 3
TP65H150G4LSG TP65H150G4LSG_3v4-2900669.pdf
TP65H150G4LSG
Hersteller: Transphorm
MOSFETs GAN FET 650V 13A TO220
auf Bestellung 2163 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.06 EUR
10+ 6.99 EUR
25+ 6.78 EUR
100+ 5.7 EUR
250+ 5.53 EUR
500+ 4.96 EUR
1000+ 4.22 EUR
TP65H150G4LSG datasheet-tp65h150g4lsg-650v-gan-fet
TP65H150G4LSG
Hersteller: Transphorm
Description: GAN FET N-CH 650V PQFN
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
auf Bestellung 2774 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.22 EUR
10+ 7.38 EUR
100+ 6.05 EUR
500+ 5.15 EUR
1000+ 4.34 EUR
Mindestbestellmenge: 3
TP65H150G4LSG datasheet-tp65h150g4lsg-650v-gan-fet
TP65H150G4LSG
Hersteller: Transphorm
Description: GAN FET N-CH 650V PQFN
Packaging: Tray
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
Produkt ist nicht verfügbar
TP65H150G4LSG-TR TP65H150G4LSG_3v1-2900669.pdf
TP65H150G4LSG-TR
Hersteller: Transphorm
MOSFET
Produkt ist nicht verfügbar
TP65H150G4LSG-TR datasheet-tp65h150g4lsg-650v-gan-fet
TP65H150G4LSG-TR
Hersteller: Transphorm
Description: 650 V 13 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+3.81 EUR
Mindestbestellmenge: 3000
TP65H150G4LSG-TR datasheet-tp65h150g4lsg-650v-gan-fet
TP65H150G4LSG-TR
Hersteller: Transphorm
Description: 650 V 13 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
auf Bestellung 5887 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.83 EUR
10+ 6.57 EUR
100+ 5.32 EUR
500+ 4.73 EUR
1000+ 4.05 EUR
Mindestbestellmenge: 3
TP65H150G4PS TP65H150G4PS_2v1-2900652.pdf
TP65H150G4PS
Hersteller: Transphorm
MOSFETs GAN FET 650V 13A TO220
auf Bestellung 683 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.82 EUR
10+ 9.28 EUR
50+ 8.78 EUR
100+ 7.73 EUR
250+ 7.46 EUR
500+ 6.81 EUR
1000+ 5.86 EUR
TP65H150G4PS 4156857.pdf
TP65H150G4PS
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H150G4PS - Galliumnitrid (GaN)-Transistor, 650 V, 16 A, 0.18 ohm, 8 nC, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 8nC
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.18ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 1943 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H150LSG TP65H150LSG_v1.pdf
Hersteller: Transphorm
Description: GANFET N-CH 650V 15A 3PQFN
Produkt ist nicht verfügbar
TP65H300G4JSGB TP65H300G4JSGB_1V0-3244319.pdf
TP65H300G4JSGB
Hersteller: Transphorm
MOSFETs Gan FET 650 V 6.5 A PQFN56
auf Bestellung 3000 Stücke:
Lieferzeit 122-126 Tag (e)
Anzahl Preis ohne MwSt
1+5.26 EUR
10+ 4.4 EUR
25+ 4.15 EUR
100+ 3.57 EUR
250+ 3.38 EUR
500+ 3.15 EUR
1000+ 2.71 EUR
TP65H300G4JSGB-TR TP65H300G4JSGB_1V0-3244319.pdf
TP65H300G4JSGB-TR
Hersteller: Transphorm
MOSFETs GAN FET 650V 9.2A QFN5x6
auf Bestellung 3922 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.79 EUR
10+ 3.98 EUR
100+ 3.15 EUR
500+ 2.68 EUR
1000+ 2.57 EUR
TP65H300G4JSGB-TR 4156858.pdf
TP65H300G4JSGB-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H300G4JSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 9.2 A, 0.312 ohm, 3.5 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H300G4JSGB-TR 4156858.pdf
TP65H300G4JSGB-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H300G4JSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 9.2 A, 0.312 ohm, 3.5 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 9.2A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 3.5nC
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.312ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H300G4JSGB-TR datasheet-tp65h300g4jsgb
TP65H300G4JSGB-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 9.2A QFN5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 41.6W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
Produkt ist nicht verfügbar
TP65H300G4JSGB-TR datasheet-tp65h300g4jsgb
TP65H300G4JSGB-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 9.2A QFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 41.6W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
auf Bestellung 3974 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.68 EUR
10+ 3.89 EUR
100+ 3.1 EUR
500+ 2.62 EUR
1000+ 2.22 EUR
2000+ 2.11 EUR
Mindestbestellmenge: 4
TP65H300G4LSG TP65H300G4LSG_v1.2-2.pdf
TP65H300G4LSG
Hersteller: Transphorm
Description: GANFET N-CH 650V 6.5A 3PQFN
auf Bestellung 139 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.15 EUR
10+ 6.42 EUR
100+ 5.26 EUR
Mindestbestellmenge: 3
TP65H300G4LSGB TP65H300G4LSGB_0v1-3388028.pdf
TP65H300G4LSGB
Hersteller: Transphorm
MOSFETs Gan FET 650 V 6.5 A PQFN88
auf Bestellung 3000 Stücke:
Lieferzeit 122-126 Tag (e)
Anzahl Preis ohne MwSt
1+5.03 EUR
10+ 4.22 EUR
25+ 3.98 EUR
100+ 3.41 EUR
250+ 3.22 EUR
500+ 3.03 EUR
1000+ 2.6 EUR
TP65H300G4LSGB-TR datasheet-tp65h300g4lsgb
TP65H300G4LSGB-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 6.5A QFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
Produkt ist nicht verfügbar
TP65H300G4LSGB-TR 4156860.pdf
TP65H300G4LSGB-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H300G4LSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 5 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 6.5A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 5nC
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.312ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H300G4LSGB-TR datasheet-tp65h300g4lsgb
TP65H300G4LSGB-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 6.5A QFN8X8
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
auf Bestellung 2968 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.98 EUR
10+ 4.18 EUR
100+ 3.39 EUR
500+ 3.01 EUR
1000+ 2.58 EUR
Mindestbestellmenge: 4
TP65H300G4LSGB-TR TP65H300G4LSGB_0v1-3359785.pdf
TP65H300G4LSGB-TR
Hersteller: Transphorm
MOSFETs GAN FET 650V 6.5A QFN8x8
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.03 EUR
10+ 4.22 EUR
25+ 3.98 EUR
100+ 3.41 EUR
250+ 3.22 EUR
500+ 3.03 EUR
1000+ 2.6 EUR
TP65H300G4LSGB-TR 4156860.pdf
TP65H300G4LSGB-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H300G4LSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 5 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)
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