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TDADP-USBC-65W-KIT Transphorm Description: 65 W OPEN FRAME 65 W USB-C PD PO
Packaging: Bulk
Voltage - Output: 25V
Board Type: Fully Populated
Utilized IC / Part: TDADP-USBC-65W
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 65 W
Produkt ist nicht verfügbar
TDAIO250P200-KIT TDAIO250P200-KIT Transphorm tdaio250p200-quick-start-guide Description: 250W PFC + LLC POWER SUPPLY KIT
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 90 ~ 265 VAC
Current - Output: 20A
Frequency - Switching: 200kHz
Board Type: Fully Populated
Utilized IC / Part: TPH3202PS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 250 W
Produkt ist nicht verfügbar
TDHB-65H070L-DC TDHB-65H070L-DC Transphorm datasheet-tp65h070l-650v-gan-fet Description: TP65H070L HALF-BRIDGE BOARD
Packaging: Bulk
Current - Output: 16A
Regulator Topology: Boost, Buck, Half-Bridge
Board Type: Fully Populated
Utilized IC / Part: TP65H070L
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
1+278.2 EUR
TDHB-65H070L-DC TDHB-65H070L-DC Transphorm ser-guide-tdhbg1200dc100-2-5kw-half-bridge-evaluat-1595592.pdf Power Management IC Development Tools 2kW hard-switched daughter card
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+233.38 EUR
TDHBG1200DC100-KIT TDHBG1200DC100-KIT Transphorm qs009_v1-TDHBG1200DC100_0V1.pdf Description: 1.2KW HB, BUCK OR BOOST EVAL KIT
Packaging: Bulk
Current - Output: 16A
Regulator Topology: Boost, Buck, Half-Bridge
Board Type: Fully Populated
Utilized IC / Part: TP65H070L
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 1.2 kW
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+551.44 EUR
TDHBG1200DC100-KIT TDHBG1200DC100-KIT Transphorm ser-guide-tdhbg1200dc100-2-5kw-half-bridge-evaluat-1595592.pdf Power Management IC Development Tools 2kW hard-switched Half-bridge, buck or boost
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+595.8 EUR
TDHBG2500P100-KIT TDHBG2500P100-KIT Transphorm dhbg2500p100-user-guide-20171206-1539032.pdf Power Management IC Development Tools 2.5kW hard-switched Half-bridge, buck or boost
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
TDINV1000P100-KIT TDINV1000P100-KIT Transphorm tdinv1000p100_user_guide_20200915-1539036.pdf Power Management IC Development Tools 1kW inverter
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
TDINV1000P100-KIT TDINV1000P100-KIT Transphorm tdinv1000p100-user-guide Description: 1KW INVERTER EVALUATION KIT
Packaging: Bulk
Current - Output: 10A
Frequency - Switching: 100kHz
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: TPH3206PSB
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/AC Converter
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 1 kW
Produkt ist nicht verfügbar
TDINV3000W050B-KIT TDINV3000W050B-KIT Transphorm tdinv3000w050b-user-guide Description: EVAL BOARD FOR TP65H050G4WS
Packaging: Box
Voltage - Input: 400V
Frequency - Switching: 50kHz
Regulator Topology: Full-Bridge
Board Type: Fully Populated
Utilized IC / Part: TP65H050G4WS
Supplied Contents: Board(s)
Main Purpose: DC/AC Inverter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 3 kW
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
1+1339.22 EUR
TDINV3000W050B-KIT TDINV3000W050B-KIT Transphorm TDINV3000W050_user_guide_0v5-1539037.pdf Power Management IC Development Tools 4kW Totem-pole PFC
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
1+1446.93 EUR
TDINV3000W050-KIT TDINV3000W050-KIT Transphorm TDINV3000W050_user_guide_0v5-1539037.pdf Power Management IC Development Tools 3kW inverter
auf Bestellung 12 Stücke:
Lieferzeit 235-239 Tag (e)
1+1322.46 EUR
TDINV3000W050-KIT TDINV3000W050-KIT Transphorm tdinv3000w050-user-guide Description: 3.0KW INVERTER EVAL KIT
Packaging: Bulk
Current - Output: 22A
Frequency - Switching: 50kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H050WS
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/AC Converter
Outputs and Type: 1, Non-Isolated
Power - Output: 3 kW
Produkt ist nicht verfügbar
TDINV3000W50B-KIT Transphorm TP65H300G4LSGB_1v1-3385999.pdf Power Management IC Development Tools 3 kW Inverter w/Microchip dsPIC
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+1446.93 EUR
TDINV3500P100-KIT TDINV3500P100-KIT Transphorm tdinv3500p100_user_guide_20200821-1539034.pdf Power Management IC Development Tools 3.5kW inverter (900V)
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
TDINV3500P100-KIT TDINV3500P100-KIT Transphorm tdinv3500p100-user-guide Description: 3.5KW INVERTER EVAL KIT
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
TDPS1000E0E10-KIT TDPS1000E0E10-KIT Transphorm TDPS1000E0E10-KIT.pdf Description: 1KW HB, BUCK OR BOOST EVAL KIT
Packaging: Bulk
Current - Output: 10A
Regulator Topology: Boost, Buck, Half-Bridge
Board Type: Fully Populated
Utilized IC / Part: TPH3206PS
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Power - Output: 1 kW
Produkt ist nicht verfügbar
TDPV1000E0C1-KIT TDPV1000E0C1-KIT Transphorm TDPV1000E0C1-KIT_UG.pdf Description: 1KW INVERTER EVAL KIT
Packaging: Bulk
Current - Output: 10A
Frequency - Switching: 100kHz
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: TPH3206PS
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/AC Converter
Outputs and Type: 1, Isolated
Part Status: Discontinued at Digi-Key
Power - Output: 1 kW
Produkt ist nicht verfügbar
TDTTP2500B066B-KIT TDTTP2500B066B-KIT Transphorm TDTTP2500B066B_KIT_Firmware_Guide_0V1_1-2448772.pdf Power Management IC Development Tools 2.5 kW Totem-pole w/Microchip dsPIC
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+2234.23 EUR
TDTTP2500B066B-KIT TDTTP2500B066B-KIT Transphorm tdttp2500b066b-kit-user-guide Description: 2.5 KW BRIDGELESS TOTEM-POLE PFC
Packaging: Bulk
Voltage - Output: 390V
Frequency - Switching: 66kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H050G4BS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 2.5 kW
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+1764.61 EUR
TDTTP2500P100-KIT TDTTP2500P100-KIT Transphorm tdttp2500p100-kit-user-guide-20171206-1661348.pdf Power Management IC Development Tools 2.5kW Totem-pole PFC
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
TDTTP2500P100-KIT TDTTP2500P100-KIT Transphorm tdttp2500p100-kit-user-guide Description: 2.5KW TOTEM-POLE PFC EVAL KIT
Packaging: Bulk
Voltage - Output: 390V
Voltage - Input: 85 ~ 265 VAC
Frequency - Switching: 100kHz
Board Type: Fully Populated
Utilized IC / Part: TPH3212PS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Power - Output: 2.5 kW
Produkt ist nicht verfügbar
TDTTP4000 Transphorm Transphorm
Produkt ist nicht verfügbar
TDTTP4000W065AN-KIT TDTTP4000W065AN-KIT Transphorm tdttp4000w065an-user-guide Description: 4 KW ANALOG BRIDGELESS TOTEM-POL
Packaging: Bulk
Voltage - Output: 387V
Voltage - Input: 85 ~ 265 VAC
Frequency - Switching: 65kHz
Board Type: Fully Populated
Utilized IC / Part: TDTTP4000W065AN
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 4 kW
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+1898.37 EUR
TDTTP4000W065AN-KIT TDTTP4000W065AN-KIT Transphorm tdttp4000w065an_user_guide_20210601-1892221.pdf Power Management IC Development Tools 4kW Analog Totem-pole PFC
Produkt ist nicht verfügbar
TDTTP4000W066B-KIT TDTTP4000W066B-KIT Transphorm dttp4000w066b-user-guide-20171023-1539028.pdf Power Management IC Development Tools 4kW Totem-pole PFC
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
TDTTP4000W066B-KIT TDTTP4000W066B-KIT Transphorm tdttp4000w066b-user-guide Description: 4KW TOTEM-POLE PFC EVAL KIT
Packaging: Bulk
Voltage - Output: 390V
Voltage - Input: 90 ~ 265 VAC
Current - Output: 15A
Frequency - Switching: 66kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H035WS
Supplied Contents: Board(s), Power Supply
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1, Non-Isolated
Power - Output: 4 kW
Produkt ist nicht verfügbar
TDTTP4000W066C-KIT TDTTP4000W066C-KIT Transphorm tdttp4000w066c_user_guide_2_20210318-2320291.pdf Power Management IC Development Tools 4 kW Totem-pole w/Microchip dsPIC
Produkt ist nicht verfügbar
TDTTP4000W066C-KIT TDTTP4000W066C-KIT Transphorm TDTTP4000W066C-KIT_UG.pdf Description: 4 KW TOTEM POLE EVAL BRD DSPIC
Packaging: Bulk
Voltage - Output: 387V
Voltage - Input: 85 ~ 265 VAC
Frequency - Switching: 66kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H035WS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 4 kW
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+2422.41 EUR
TP65H015G5WS TP65H015G5WS TRANSPHORM 4156603.pdf Description: TRANSPHORM - TP65H015G5WS - Galliumnitrid (GaN)-Transistor, 650 V, 95 A, 0.018 ohm, 74 nC, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 95A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 74nC
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.018ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 405 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H015G5WS TP65H015G5WS Transphorm TP65H015G5WS_2v0_1-2448878.pdf MOSFETs GAN FET 650V 95A TO2 47
auf Bestellung 371 Stücke:
Lieferzeit 10-14 Tag (e)
1+52.8 EUR
10+ 46.92 EUR
30+ 45.18 EUR
60+ 44.4 EUR
120+ 41.04 EUR
270+ 38.28 EUR
510+ 36.75 EUR
TP65H015G5WS TP65H015G5WS Transphorm TP65H015G5WS_1v0-1.pdf Description: 650 V 95 A GAN FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5218 pF @ 400 V
auf Bestellung 206 Stücke:
Lieferzeit 10-14 Tag (e)
1+52.41 EUR
30+ 43.46 EUR
120+ 40.74 EUR
TP65H035G4QS TP65H035G4QS Transphorm datasheet-tp65h035g4qs-650v-gan-fet-2 Description: 650 V 46.5 A GAN FET HIGH VOLTAG
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Produkt ist nicht verfügbar
TP65H035G4QS TP65H035G4QS Transphorm datasheet-tp65h035g4qs-650v-gan-fet-2 Description: 650 V 46.5 A GAN FET HIGH VOLTAG
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 883 Stücke:
Lieferzeit 10-14 Tag (e)
1+29 EUR
10+ 25.56 EUR
100+ 22.1 EUR
500+ 20.03 EUR
TP65H035G4QS-TR TP65H035G4QS-TR TRANSPHORM 4156844.pdf Description: TRANSPHORM - TP65H035G4QS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 46.5 A, 0.041 ohm, 22 nC, TOLL, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H035G4QS-TR TP65H035G4QS-TR Transphorm TP65H035G4QS_1v1_1-3386028.pdf MOSFET GaN FET 650 V 46.5A TOLL
Produkt ist nicht verfügbar
TP65H035G4QS-TR TP65H035G4QS-TR TRANSPHORM 4156844.pdf Description: TRANSPHORM - TP65H035G4QS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 46.5 A, 0.041 ohm, 22 nC, TOLL, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 46.5A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 22nC
Bauform - Transistor: TOLL
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.041ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H035G4WS TP65H035G4WS Transphorm TP65H035G4WS_v1.2.pdf Description: GANFET N-CH 650V 46.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 0 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 773 Stücke:
Lieferzeit 10-14 Tag (e)
1+29.44 EUR
30+ 23.84 EUR
120+ 22.44 EUR
510+ 20.33 EUR
TP65H035G4WS TP65H035G4WS Transphorm TP65H035G4WS_v3_5-1838752.pdf MOSFET 650V, 35mOhm
auf Bestellung 635 Stücke:
Lieferzeit 10-14 Tag (e)
1+29.36 EUR
10+ 25.87 EUR
30+ 25.48 EUR
60+ 24.69 EUR
120+ 22.35 EUR
270+ 21.98 EUR
510+ 20.26 EUR
TP65H035G4WS TP65H035G4WS TRANSPHORM 4156845.pdf Description: TRANSPHORM - TP65H035G4WS - Galliumnitrid (GaN)-Transistor, 650 V, 46 A, 0.041 ohm, 22 nC, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 46A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 22nC
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.041ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 513 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H035G4WSQA TP65H035G4WSQA Transphorm TP65H035G4WSQA_v1.2.pdf Description: 650 V 46.5 GAN FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 271 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.4 EUR
30+ 25.42 EUR
120+ 23.93 EUR
TP65H035G4WSQA TP65H035G4WSQA Transphorm datasheet_tp65h035g4wsqa_650v_gan_fet_20211029-2604321.pdf MOSFETs GAN FET 650V 46.5A TO247
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.63 EUR
10+ 27.88 EUR
30+ 27.46 EUR
60+ 26.59 EUR
120+ 24.08 EUR
270+ 23.67 EUR
510+ 22.28 EUR
TP65H035G4WSQA TP65H035G4WSQA TRANSPHORM 4156846.pdf Description: TRANSPHORM - TP65H035G4WSQA - Galliumnitrid (GaN)-Transistor, 650 V, 47.2 A, 0.041 ohm, 22 nC, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 47.2A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 22nC
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.041ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 346 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H035WS TP65H035WS Transphorm TP65H035WS_v4-1842514.pdf MOSFET 650V, 35mOhm
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.89 EUR
10+ 30.34 EUR
120+ 25.91 EUR
510+ 23.53 EUR
1020+ 22.14 EUR
TP65H035WS TP65H035WS Transphorm datasheet-tp65h035ws-650v-gan-fet Description: GANFET N-CH 650V 46.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 302 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.16 EUR
30+ 21.11 EUR
TP65H035WSQA TP65H035WSQA Transphorm tp65h035wsqa_v1-1539039.pdf MOSFET 650V, 35mOhm
auf Bestellung 580 Stücke:
Lieferzeit 10-14 Tag (e)
1+35.08 EUR
10+ 32.37 EUR
120+ 27.63 EUR
510+ 25.08 EUR
1020+ 23.62 EUR
TP65H035WSQA TP65H035WSQA Transphorm tp65h035wsqa_v1-1.pdf Description: GANFET N-CH 650V 47.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
1+34.64 EUR
60+ 28.71 EUR
120+ 26.91 EUR
TP65H050G4BS TP65H050G4BS Transphorm datasheet-tp65h050g4bs-650v-gan-fet Description: 650 V 34 A GAN FET
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.38 EUR
50+ 16.49 EUR
100+ 15.52 EUR
TP65H050G4BS TP65H050G4BS Transphorm TP65H050G4BS_1v2-3159416.pdf MOSFET 650V, 50mOhm
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.52 EUR
10+ 18.32 EUR
50+ 15.56 EUR
250+ 15.14 EUR
500+ 14.15 EUR
1000+ 12.97 EUR
2500+ 12.58 EUR
TP65H050G4BS TP65H050G4BS TRANSPHORM 4156847.pdf Description: TRANSPHORM - TP65H050G4BS - Galliumnitrid (GaN)-Transistor, 650 V, 34 A, 0.06 ohm, 16 nC, TO-263, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 34A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 16nC
Bauform - Transistor: TO-263
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.06ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 412 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H050G4QS-TR TP65H050G4QS-TR Transphorm datasheet-tp65h050g4qs Description: 650 V 34 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 967 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.34 EUR
10+ 15.72 EUR
100+ 13.1 EUR
500+ 11.56 EUR
TP65H050G4QS-TR TP65H050G4QS-TR TRANSPHORM 4156848.pdf Description: TRANSPHORM - TP65H050G4QS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 34 A, 0.06 ohm, 16 nC, TOLL, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H050G4QS-TR TP65H050G4QS-TR TRANSPHORM 4156848.pdf Description: TRANSPHORM - TP65H050G4QS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 34 A, 0.06 ohm, 16 nC, TOLL, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 34A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 16nC
Bauform - Transistor: TOLL
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.06ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H050G4QS-TR TP65H050G4QS-TR Transphorm datasheet-tp65h050g4qs Description: 650 V 34 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Produkt ist nicht verfügbar
TP65H050G4WS TP65H050G4WS Transphorm TP65H050G4WS_1v0_1-2580572.pdf MOSFETs GAN FET 650V 34A TO247
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.5 EUR
10+ 20.7 EUR
30+ 20.15 EUR
60+ 19.03 EUR
120+ 17.88 EUR
270+ 17.34 EUR
510+ 16.23 EUR
TP65H050G4WS TP65H050G4WS TRANSPHORM 4156849.pdf Description: TRANSPHORM - TP65H050G4WS - Galliumnitrid (GaN)-Transistor, 650 V, 34 A, 0.06 ohm, 16 nC, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 34A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 16nC
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.06ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H050G4WS TP65H050G4WS Transphorm datasheet-tp65h050g4ws-650v-gan-fet-2 Description: 650 V 34 A GAN FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 260 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.13 EUR
30+ 18.72 EUR
120+ 17.61 EUR
TP65H050G4YS TP65H050G4YS TRANSPHORM 4156850.pdf Description: TRANSPHORM - TP65H050G4YS - Galliumnitrid (GaN)-Transistor, 650 V, 35 A, 0.06 ohm, 16 nC, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 35A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 16nC
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.06ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H050G4YS TP65H050G4YS Transphorm TP65H050G4YS_1v3-3385973.pdf MOSFETs GaN FET 650 V 35A TO-247-4
auf Bestellung 397 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.5 EUR
10+ 20.7 EUR
30+ 20.13 EUR
60+ 19.03 EUR
120+ 17.88 EUR
270+ 17.34 EUR
510+ 16.23 EUR
TP65H050WS TP65H050WS Transphorm tp65h050ws_v2-1539038.pdf MOSFET 650V, 50mOhm
auf Bestellung 342 Stücke:
Lieferzeit 10-14 Tag (e)
1+29.09 EUR
10+ 26.73 EUR
120+ 23.06 EUR
510+ 20.08 EUR
1020+ 19.15 EUR
2520+ 18.67 EUR
TDADP-USBC-65W-KIT
Hersteller: Transphorm
Description: 65 W OPEN FRAME 65 W USB-C PD PO
Packaging: Bulk
Voltage - Output: 25V
Board Type: Fully Populated
Utilized IC / Part: TDADP-USBC-65W
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 65 W
Produkt ist nicht verfügbar
TDAIO250P200-KIT tdaio250p200-quick-start-guide
TDAIO250P200-KIT
Hersteller: Transphorm
Description: 250W PFC + LLC POWER SUPPLY KIT
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 90 ~ 265 VAC
Current - Output: 20A
Frequency - Switching: 200kHz
Board Type: Fully Populated
Utilized IC / Part: TPH3202PS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 250 W
Produkt ist nicht verfügbar
TDHB-65H070L-DC datasheet-tp65h070l-650v-gan-fet
TDHB-65H070L-DC
Hersteller: Transphorm
Description: TP65H070L HALF-BRIDGE BOARD
Packaging: Bulk
Current - Output: 16A
Regulator Topology: Boost, Buck, Half-Bridge
Board Type: Fully Populated
Utilized IC / Part: TP65H070L
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+278.2 EUR
TDHB-65H070L-DC ser-guide-tdhbg1200dc100-2-5kw-half-bridge-evaluat-1595592.pdf
TDHB-65H070L-DC
Hersteller: Transphorm
Power Management IC Development Tools 2kW hard-switched daughter card
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+233.38 EUR
TDHBG1200DC100-KIT qs009_v1-TDHBG1200DC100_0V1.pdf
TDHBG1200DC100-KIT
Hersteller: Transphorm
Description: 1.2KW HB, BUCK OR BOOST EVAL KIT
Packaging: Bulk
Current - Output: 16A
Regulator Topology: Boost, Buck, Half-Bridge
Board Type: Fully Populated
Utilized IC / Part: TP65H070L
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 1.2 kW
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+551.44 EUR
TDHBG1200DC100-KIT ser-guide-tdhbg1200dc100-2-5kw-half-bridge-evaluat-1595592.pdf
TDHBG1200DC100-KIT
Hersteller: Transphorm
Power Management IC Development Tools 2kW hard-switched Half-bridge, buck or boost
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+595.8 EUR
TDHBG2500P100-KIT dhbg2500p100-user-guide-20171206-1539032.pdf
TDHBG2500P100-KIT
Hersteller: Transphorm
Power Management IC Development Tools 2.5kW hard-switched Half-bridge, buck or boost
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
TDINV1000P100-KIT tdinv1000p100_user_guide_20200915-1539036.pdf
TDINV1000P100-KIT
Hersteller: Transphorm
Power Management IC Development Tools 1kW inverter
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
TDINV1000P100-KIT tdinv1000p100-user-guide
TDINV1000P100-KIT
Hersteller: Transphorm
Description: 1KW INVERTER EVALUATION KIT
Packaging: Bulk
Current - Output: 10A
Frequency - Switching: 100kHz
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: TPH3206PSB
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/AC Converter
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 1 kW
Produkt ist nicht verfügbar
TDINV3000W050B-KIT tdinv3000w050b-user-guide
TDINV3000W050B-KIT
Hersteller: Transphorm
Description: EVAL BOARD FOR TP65H050G4WS
Packaging: Box
Voltage - Input: 400V
Frequency - Switching: 50kHz
Regulator Topology: Full-Bridge
Board Type: Fully Populated
Utilized IC / Part: TP65H050G4WS
Supplied Contents: Board(s)
Main Purpose: DC/AC Inverter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 3 kW
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+1339.22 EUR
TDINV3000W050B-KIT TDINV3000W050_user_guide_0v5-1539037.pdf
TDINV3000W050B-KIT
Hersteller: Transphorm
Power Management IC Development Tools 4kW Totem-pole PFC
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+1446.93 EUR
TDINV3000W050-KIT TDINV3000W050_user_guide_0v5-1539037.pdf
TDINV3000W050-KIT
Hersteller: Transphorm
Power Management IC Development Tools 3kW inverter
auf Bestellung 12 Stücke:
Lieferzeit 235-239 Tag (e)
Anzahl Preis ohne MwSt
1+1322.46 EUR
TDINV3000W050-KIT tdinv3000w050-user-guide
TDINV3000W050-KIT
Hersteller: Transphorm
Description: 3.0KW INVERTER EVAL KIT
Packaging: Bulk
Current - Output: 22A
Frequency - Switching: 50kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H050WS
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/AC Converter
Outputs and Type: 1, Non-Isolated
Power - Output: 3 kW
Produkt ist nicht verfügbar
TDINV3000W50B-KIT TP65H300G4LSGB_1v1-3385999.pdf
Hersteller: Transphorm
Power Management IC Development Tools 3 kW Inverter w/Microchip dsPIC
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+1446.93 EUR
TDINV3500P100-KIT tdinv3500p100_user_guide_20200821-1539034.pdf
TDINV3500P100-KIT
Hersteller: Transphorm
Power Management IC Development Tools 3.5kW inverter (900V)
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
TDINV3500P100-KIT tdinv3500p100-user-guide
TDINV3500P100-KIT
Hersteller: Transphorm
Description: 3.5KW INVERTER EVAL KIT
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
TDPS1000E0E10-KIT TDPS1000E0E10-KIT.pdf
TDPS1000E0E10-KIT
Hersteller: Transphorm
Description: 1KW HB, BUCK OR BOOST EVAL KIT
Packaging: Bulk
Current - Output: 10A
Regulator Topology: Boost, Buck, Half-Bridge
Board Type: Fully Populated
Utilized IC / Part: TPH3206PS
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Power - Output: 1 kW
Produkt ist nicht verfügbar
TDPV1000E0C1-KIT TDPV1000E0C1-KIT_UG.pdf
TDPV1000E0C1-KIT
Hersteller: Transphorm
Description: 1KW INVERTER EVAL KIT
Packaging: Bulk
Current - Output: 10A
Frequency - Switching: 100kHz
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: TPH3206PS
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/AC Converter
Outputs and Type: 1, Isolated
Part Status: Discontinued at Digi-Key
Power - Output: 1 kW
Produkt ist nicht verfügbar
TDTTP2500B066B-KIT TDTTP2500B066B_KIT_Firmware_Guide_0V1_1-2448772.pdf
TDTTP2500B066B-KIT
Hersteller: Transphorm
Power Management IC Development Tools 2.5 kW Totem-pole w/Microchip dsPIC
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2234.23 EUR
TDTTP2500B066B-KIT tdttp2500b066b-kit-user-guide
TDTTP2500B066B-KIT
Hersteller: Transphorm
Description: 2.5 KW BRIDGELESS TOTEM-POLE PFC
Packaging: Bulk
Voltage - Output: 390V
Frequency - Switching: 66kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H050G4BS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 2.5 kW
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+1764.61 EUR
TDTTP2500P100-KIT tdttp2500p100-kit-user-guide-20171206-1661348.pdf
TDTTP2500P100-KIT
Hersteller: Transphorm
Power Management IC Development Tools 2.5kW Totem-pole PFC
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
TDTTP2500P100-KIT tdttp2500p100-kit-user-guide
TDTTP2500P100-KIT
Hersteller: Transphorm
Description: 2.5KW TOTEM-POLE PFC EVAL KIT
Packaging: Bulk
Voltage - Output: 390V
Voltage - Input: 85 ~ 265 VAC
Frequency - Switching: 100kHz
Board Type: Fully Populated
Utilized IC / Part: TPH3212PS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Power - Output: 2.5 kW
Produkt ist nicht verfügbar
TDTTP4000
Hersteller: Transphorm
Transphorm
Produkt ist nicht verfügbar
TDTTP4000W065AN-KIT tdttp4000w065an-user-guide
TDTTP4000W065AN-KIT
Hersteller: Transphorm
Description: 4 KW ANALOG BRIDGELESS TOTEM-POL
Packaging: Bulk
Voltage - Output: 387V
Voltage - Input: 85 ~ 265 VAC
Frequency - Switching: 65kHz
Board Type: Fully Populated
Utilized IC / Part: TDTTP4000W065AN
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 4 kW
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+1898.37 EUR
TDTTP4000W065AN-KIT tdttp4000w065an_user_guide_20210601-1892221.pdf
TDTTP4000W065AN-KIT
Hersteller: Transphorm
Power Management IC Development Tools 4kW Analog Totem-pole PFC
Produkt ist nicht verfügbar
TDTTP4000W066B-KIT dttp4000w066b-user-guide-20171023-1539028.pdf
TDTTP4000W066B-KIT
Hersteller: Transphorm
Power Management IC Development Tools 4kW Totem-pole PFC
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
TDTTP4000W066B-KIT tdttp4000w066b-user-guide
TDTTP4000W066B-KIT
Hersteller: Transphorm
Description: 4KW TOTEM-POLE PFC EVAL KIT
Packaging: Bulk
Voltage - Output: 390V
Voltage - Input: 90 ~ 265 VAC
Current - Output: 15A
Frequency - Switching: 66kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H035WS
Supplied Contents: Board(s), Power Supply
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1, Non-Isolated
Power - Output: 4 kW
Produkt ist nicht verfügbar
TDTTP4000W066C-KIT tdttp4000w066c_user_guide_2_20210318-2320291.pdf
TDTTP4000W066C-KIT
Hersteller: Transphorm
Power Management IC Development Tools 4 kW Totem-pole w/Microchip dsPIC
Produkt ist nicht verfügbar
TDTTP4000W066C-KIT TDTTP4000W066C-KIT_UG.pdf
TDTTP4000W066C-KIT
Hersteller: Transphorm
Description: 4 KW TOTEM POLE EVAL BRD DSPIC
Packaging: Bulk
Voltage - Output: 387V
Voltage - Input: 85 ~ 265 VAC
Frequency - Switching: 66kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H035WS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 4 kW
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2422.41 EUR
TP65H015G5WS 4156603.pdf
TP65H015G5WS
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H015G5WS - Galliumnitrid (GaN)-Transistor, 650 V, 95 A, 0.018 ohm, 74 nC, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 95A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 74nC
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.018ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 405 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H015G5WS TP65H015G5WS_2v0_1-2448878.pdf
TP65H015G5WS
Hersteller: Transphorm
MOSFETs GAN FET 650V 95A TO2 47
auf Bestellung 371 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+52.8 EUR
10+ 46.92 EUR
30+ 45.18 EUR
60+ 44.4 EUR
120+ 41.04 EUR
270+ 38.28 EUR
510+ 36.75 EUR
TP65H015G5WS TP65H015G5WS_1v0-1.pdf
TP65H015G5WS
Hersteller: Transphorm
Description: 650 V 95 A GAN FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5218 pF @ 400 V
auf Bestellung 206 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+52.41 EUR
30+ 43.46 EUR
120+ 40.74 EUR
TP65H035G4QS datasheet-tp65h035g4qs-650v-gan-fet-2
TP65H035G4QS
Hersteller: Transphorm
Description: 650 V 46.5 A GAN FET HIGH VOLTAG
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Produkt ist nicht verfügbar
TP65H035G4QS datasheet-tp65h035g4qs-650v-gan-fet-2
TP65H035G4QS
Hersteller: Transphorm
Description: 650 V 46.5 A GAN FET HIGH VOLTAG
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 883 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+29 EUR
10+ 25.56 EUR
100+ 22.1 EUR
500+ 20.03 EUR
TP65H035G4QS-TR 4156844.pdf
TP65H035G4QS-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H035G4QS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 46.5 A, 0.041 ohm, 22 nC, TOLL, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H035G4QS-TR TP65H035G4QS_1v1_1-3386028.pdf
TP65H035G4QS-TR
Hersteller: Transphorm
MOSFET GaN FET 650 V 46.5A TOLL
Produkt ist nicht verfügbar
TP65H035G4QS-TR 4156844.pdf
TP65H035G4QS-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H035G4QS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 46.5 A, 0.041 ohm, 22 nC, TOLL, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 46.5A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 22nC
Bauform - Transistor: TOLL
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.041ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H035G4WS TP65H035G4WS_v1.2.pdf
TP65H035G4WS
Hersteller: Transphorm
Description: GANFET N-CH 650V 46.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 0 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 773 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+29.44 EUR
30+ 23.84 EUR
120+ 22.44 EUR
510+ 20.33 EUR
TP65H035G4WS TP65H035G4WS_v3_5-1838752.pdf
TP65H035G4WS
Hersteller: Transphorm
MOSFET 650V, 35mOhm
auf Bestellung 635 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+29.36 EUR
10+ 25.87 EUR
30+ 25.48 EUR
60+ 24.69 EUR
120+ 22.35 EUR
270+ 21.98 EUR
510+ 20.26 EUR
TP65H035G4WS 4156845.pdf
TP65H035G4WS
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H035G4WS - Galliumnitrid (GaN)-Transistor, 650 V, 46 A, 0.041 ohm, 22 nC, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 46A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 22nC
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.041ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 513 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H035G4WSQA TP65H035G4WSQA_v1.2.pdf
TP65H035G4WSQA
Hersteller: Transphorm
Description: 650 V 46.5 GAN FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 271 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+31.4 EUR
30+ 25.42 EUR
120+ 23.93 EUR
TP65H035G4WSQA datasheet_tp65h035g4wsqa_650v_gan_fet_20211029-2604321.pdf
TP65H035G4WSQA
Hersteller: Transphorm
MOSFETs GAN FET 650V 46.5A TO247
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+31.63 EUR
10+ 27.88 EUR
30+ 27.46 EUR
60+ 26.59 EUR
120+ 24.08 EUR
270+ 23.67 EUR
510+ 22.28 EUR
TP65H035G4WSQA 4156846.pdf
TP65H035G4WSQA
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H035G4WSQA - Galliumnitrid (GaN)-Transistor, 650 V, 47.2 A, 0.041 ohm, 22 nC, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 47.2A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 22nC
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.041ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 346 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H035WS TP65H035WS_v4-1842514.pdf
TP65H035WS
Hersteller: Transphorm
MOSFET 650V, 35mOhm
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+32.89 EUR
10+ 30.34 EUR
120+ 25.91 EUR
510+ 23.53 EUR
1020+ 22.14 EUR
TP65H035WS datasheet-tp65h035ws-650v-gan-fet
TP65H035WS
Hersteller: Transphorm
Description: GANFET N-CH 650V 46.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 302 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+23.16 EUR
30+ 21.11 EUR
TP65H035WSQA tp65h035wsqa_v1-1539039.pdf
TP65H035WSQA
Hersteller: Transphorm
MOSFET 650V, 35mOhm
auf Bestellung 580 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+35.08 EUR
10+ 32.37 EUR
120+ 27.63 EUR
510+ 25.08 EUR
1020+ 23.62 EUR
TP65H035WSQA tp65h035wsqa_v1-1.pdf
TP65H035WSQA
Hersteller: Transphorm
Description: GANFET N-CH 650V 47.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+34.64 EUR
60+ 28.71 EUR
120+ 26.91 EUR
TP65H050G4BS datasheet-tp65h050g4bs-650v-gan-fet
TP65H050G4BS
Hersteller: Transphorm
Description: 650 V 34 A GAN FET
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+20.38 EUR
50+ 16.49 EUR
100+ 15.52 EUR
TP65H050G4BS TP65H050G4BS_1v2-3159416.pdf
TP65H050G4BS
Hersteller: Transphorm
MOSFET 650V, 50mOhm
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+20.52 EUR
10+ 18.32 EUR
50+ 15.56 EUR
250+ 15.14 EUR
500+ 14.15 EUR
1000+ 12.97 EUR
2500+ 12.58 EUR
TP65H050G4BS 4156847.pdf
TP65H050G4BS
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H050G4BS - Galliumnitrid (GaN)-Transistor, 650 V, 34 A, 0.06 ohm, 16 nC, TO-263, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 34A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 16nC
Bauform - Transistor: TO-263
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.06ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 412 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H050G4QS-TR datasheet-tp65h050g4qs
TP65H050G4QS-TR
Hersteller: Transphorm
Description: 650 V 34 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 967 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+18.34 EUR
10+ 15.72 EUR
100+ 13.1 EUR
500+ 11.56 EUR
TP65H050G4QS-TR 4156848.pdf
TP65H050G4QS-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H050G4QS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 34 A, 0.06 ohm, 16 nC, TOLL, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H050G4QS-TR 4156848.pdf
TP65H050G4QS-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H050G4QS-TR - Galliumnitrid (GaN)-Transistor, 650 V, 34 A, 0.06 ohm, 16 nC, TOLL, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 34A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 16nC
Bauform - Transistor: TOLL
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.06ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H050G4QS-TR datasheet-tp65h050g4qs
TP65H050G4QS-TR
Hersteller: Transphorm
Description: 650 V 34 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Produkt ist nicht verfügbar
TP65H050G4WS TP65H050G4WS_1v0_1-2580572.pdf
TP65H050G4WS
Hersteller: Transphorm
MOSFETs GAN FET 650V 34A TO247
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+23.5 EUR
10+ 20.7 EUR
30+ 20.15 EUR
60+ 19.03 EUR
120+ 17.88 EUR
270+ 17.34 EUR
510+ 16.23 EUR
TP65H050G4WS 4156849.pdf
TP65H050G4WS
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H050G4WS - Galliumnitrid (GaN)-Transistor, 650 V, 34 A, 0.06 ohm, 16 nC, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 34A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 16nC
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.06ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H050G4WS datasheet-tp65h050g4ws-650v-gan-fet-2
TP65H050G4WS
Hersteller: Transphorm
Description: 650 V 34 A GAN FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+23.13 EUR
30+ 18.72 EUR
120+ 17.61 EUR
TP65H050G4YS 4156850.pdf
TP65H050G4YS
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H050G4YS - Galliumnitrid (GaN)-Transistor, 650 V, 35 A, 0.06 ohm, 16 nC, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 35A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 16nC
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.06ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H050G4YS TP65H050G4YS_1v3-3385973.pdf
TP65H050G4YS
Hersteller: Transphorm
MOSFETs GaN FET 650 V 35A TO-247-4
auf Bestellung 397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+23.5 EUR
10+ 20.7 EUR
30+ 20.13 EUR
60+ 19.03 EUR
120+ 17.88 EUR
270+ 17.34 EUR
510+ 16.23 EUR
TP65H050WS tp65h050ws_v2-1539038.pdf
TP65H050WS
Hersteller: Transphorm
MOSFET 650V, 50mOhm
auf Bestellung 342 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+29.09 EUR
10+ 26.73 EUR
120+ 23.06 EUR
510+ 20.08 EUR
1020+ 19.15 EUR
2520+ 18.67 EUR
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