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TP65H300G4LSG-TR TP65H300G4LSG-TR Transphorm TP65H300G4LSG_v1.2-2.pdf Description: GANFET N-CH 650V 6.5A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.88 EUR
Mindestbestellmenge: 3000
TP65H300G4LSG-TR TP65H300G4LSG-TR TRANSPHORM 4156859.pdf Description: TRANSPHORM - TP65H300G4LSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 9.6 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H300G4LSG-TR TP65H300G4LSG-TR Transphorm TP65H300G4LSG_2v4-1838764.pdf MOSFETs 650V, 240mOhm
auf Bestellung 558 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.6 EUR
10+ 5.54 EUR
25+ 5.35 EUR
100+ 4.49 EUR
250+ 4.33 EUR
500+ 4 EUR
1000+ 3.41 EUR
TP65H300G4LSG-TR TP65H300G4LSG-TR Transphorm TP65H300G4LSG_v1.2-2.pdf Description: GANFET N-CH 650V 6.5A 3PQFN
Packaging: Cut Tape (CT)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
auf Bestellung 3449 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.91 EUR
10+ 4.96 EUR
100+ 4.01 EUR
500+ 3.57 EUR
1000+ 3.06 EUR
Mindestbestellmenge: 3
TP65H300G4LSG-TR TP65H300G4LSG-TR TRANSPHORM 4156859.pdf Description: TRANSPHORM - TP65H300G4LSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 9.6 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 6.5A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 9.6nC
Bauform - Transistor: PQFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.312ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H480G4JSG TP65H480G4JSG Transphorm TP65H480G4JSG_3v3-1920428.pdf MOSFETs GAN FET 650V 3.6 A PQFN56
auf Bestellung 495 Stücke:
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1+4.84 EUR
10+ 4.08 EUR
25+ 3.85 EUR
100+ 3.29 EUR
250+ 3.12 EUR
500+ 2.92 EUR
1000+ 2.5 EUR
TP65H480G4JSGB-TR TP65H480G4JSGB-TR Transphorm TP65H480G4JSGB_1v3-3244301.pdf MOSFETs GAN FET 650V 3.6A QFN5x6
auf Bestellung 3898 Stücke:
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1+4.79 EUR
10+ 3.98 EUR
100+ 3.15 EUR
250+ 2.92 EUR
500+ 2.66 EUR
1000+ 2.27 EUR
2500+ 2.16 EUR
TP65H480G4JSGB-TR TP65H480G4JSGB-TR Transphorm datasheet-tp65h480g4jsgb-650v-gan-fet Description: GANFET N-CH 650V 3.6A QFN5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 400 V
Produkt ist nicht verfügbar
TP65H480G4JSGB-TR TP65H480G4JSGB-TR TRANSPHORM 4156862.pdf Description: TRANSPHORM - TP65H480G4JSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 5 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.6A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 5nC
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.56ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H480G4JSGB-TR TP65H480G4JSGB-TR TRANSPHORM 4156862.pdf Description: TRANSPHORM - TP65H480G4JSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 5 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H480G4JSGB-TR TP65H480G4JSGB-TR Transphorm datasheet-tp65h480g4jsgb-650v-gan-fet Description: GANFET N-CH 650V 3.6A QFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 400 V
auf Bestellung 3938 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.68 EUR
10+ 3.89 EUR
100+ 3.1 EUR
500+ 2.62 EUR
1000+ 2.22 EUR
2000+ 2.11 EUR
Mindestbestellmenge: 4
TP65H480G4JSG-TR TP65H480G4JSG-TR TRANSPHORM 4156861.pdf Description: TRANSPHORM - TP65H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H480G4JSG-TR TP65H480G4JSG-TR Transphorm TP65H480G4JSG_3v3-1920428.pdf GaN FETs 650V, 480mOhm
auf Bestellung 3761 Stücke:
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1+4.86 EUR
10+ 4.1 EUR
25+ 4.08 EUR
100+ 3.31 EUR
500+ 2.94 EUR
1000+ 2.52 EUR
2000+ 2.38 EUR
TP65H480G4JSG-TR TP65H480G4JSG-TR TRANSPHORM 4156861.pdf Description: TRANSPHORM - TP65H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.6A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 9nC
Bauform - Transistor: PQFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.56ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H480G4JSG-TR TP65H480G4JSG-TR Transphorm datasheet-tp65h480g4jsg Description: GANFET N-CH 650V 3.6A 3PQFN
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 3-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.89 EUR
10+ 4.11 EUR
100+ 3.33 EUR
500+ 2.96 EUR
1000+ 2.53 EUR
2000+ 2.38 EUR
Mindestbestellmenge: 4
TP65H480G4JSG-TR TP65H480G4JSG-TR Transphorm datasheet-tp65h480g4jsg Description: GANFET N-CH 650V 3.6A 3PQFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 3-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
TP90H050WS TP90H050WS Transphorm TP90H050WS_2v0-1837943.pdf MOSFET 900V, 50mOhm
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
1+28.3 EUR
10+ 24.92 EUR
30+ 24.55 EUR
60+ 23.8 EUR
120+ 21.54 EUR
270+ 21.17 EUR
510+ 19.52 EUR
TP90H050WS TP90H050WS Transphorm tp90h050ws-1.pdf Description: GANFET N-CH 900V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 700µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 600 V
auf Bestellung 208 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.84 EUR
30+ 22.53 EUR
120+ 21.21 EUR
TP90H180PS TP90H180PS Transphorm datasheet-tp90h180ps-900v-gan-fet Description: GANFET N-CH 900V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 10A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 600 V
auf Bestellung 92 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.67 EUR
10+ 16.45 EUR
TPD3215M TPD3215M Transphorm datasheet-tpd3215m-600v-cascode-gan-module Description: GANFET 2N-CH 600V 70A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Power - Max: 470W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 8V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V
Supplier Device Package: Module
Part Status: Obsolete
Produkt ist nicht verfügbar
TPH3202LD TPH3202LD Transphorm 600v-cascode-gan-fet-tph3202l Description: GANFET N-CH 600V 9A 4PQFN
Packaging: Tube
Package / Case: 4-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
TPH3202LS TPH3202LS Transphorm 600v-cascode-gan-fet-tph3202l Description: GANFET N-CH 600V 9A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
TPH3202LS Transphorm 600v-cascode-gan-fet-tph3202l Transphorm
Produkt ist nicht verfügbar
TPH3202PD TPH3202PD Transphorm 600v-cascode-gan-fet-tph3202p Description: GANFET N-CH 600V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
TPH3202PS TPH3202PS Transphorm 600v-cascode-gan-fet-tph3202p Description: GANFET N-CH 600V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
TPH3205WSB TPH3205WSB Transphorm TPH3205WS.pdf Description: GANFET N-CH 650V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 8V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 700µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Produkt ist nicht verfügbar
TPH3205WSBQA TPH3205WSBQA Transphorm 650v-aec-q101-cascode-gan-fet-tph3205wsbqa-2019103-1539027.pdf MOSFET GAN FET 650V 35A TO247
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.97 EUR
10+ 35.94 EUR
30+ 34.32 EUR
120+ 30.68 EUR
TPH3205WSBQA TPH3205WSBQA Transphorm 650v-aec-q101-cascode-gan-fet-tph3205wsbqa Description: GANFET N-CH 650V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 22A, 8V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 700µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TPH3206LD TPH3206LD Transphorm 600v-cascode-gan-fet-tph3206ld Description: GANFET N-CH 600V 17A PQFN
Packaging: Tube
Package / Case: 4-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
TPH3206LDB TPH3206LDB Transphorm tph3206l-20190214.pdf Description: GANFET N-CH 650V 16A PQFN
Packaging: Tube
Package / Case: 4-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Produkt ist nicht verfügbar
TPH3206LDGB TPH3206LDGB Transphorm tph3206l-20190214.pdf Description: GANFET N-CH 650V 16A PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
TPH3206LDG-TR Transphorm tph3206ldg-20180327.pdf Description: GANFET N-CH 600V 17A 3PQFN
Packaging: Tray
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
TPH3206LS TPH3206LS Transphorm TPH3206LS.pdf Description: GANFET N-CH 600V 17A PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
TPH3206LSB TPH3206LSB Transphorm tph3206l-20190214.pdf Description: GANFET N-CH 650V 16A PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Produkt ist nicht verfügbar
TPH3206LSGB Transphorm tph3206lsgb.pdf Description: GANFET N-CH 650V 16A 3PQFN
Packaging: Tray
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Produkt ist nicht verfügbar
TPH3206PD TPH3206PD Transphorm 600v-cascode-gan-fet-tph3206pd Description: GANFET N-CH 600V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.04 EUR
Mindestbestellmenge: 2
TPH3206PS TPH3206PS Transphorm 600v-cascode-gan-fet-tph3206ps Description: GANFET N-CH 600V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.42 EUR
50+ 12.3 EUR
100+ 11.01 EUR
Mindestbestellmenge: 2
TPH3206PSB TPH3206PSB Transphorm tph3206psb-20171130.pdf Description: GANFET N-CH 650V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Produkt ist nicht verfügbar
TPH3206PSB TPH3206PSB Transphorm 50v-cascode-gan-fet-tph3206psb-20171130-1539029.pdf MOSFET 650V, 150mO
auf Bestellung 514 Stücke:
Lieferzeit 10-14 Tag (e)
TPH3207WS TPH3207WS Transphorm tph3207w-20180717.pdf Description: GANFET N-CH 650V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 8V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.65V @ 700µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2197 pF @ 400 V
Produkt ist nicht verfügbar
TPH3208LD TPH3208LD Transphorm tph3208l-20180526.pdf Description: GANFET N-CH 650V 20A 4PQFN
Packaging: Tube
Package / Case: 4-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
TPH3208LDG TPH3208LDG Transphorm tph3208l-20180526.pdf Description: GANFET N-CH 650V 20A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.72 EUR
TPH3208LS TPH3208LS Transphorm tph3208l-20180526.pdf Description: GANFET N-CH 650V 20A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
TPH3208LSG TPH3208LSG Transphorm tph3208l-20180526.pdf Description: GANFET N-CH 650V 20A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
TPH3208PD TPH3208PD Transphorm 650v-cascode-gan-fet-tph3208ps Description: GANFET N-CH 650V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
TPH3208PS TPH3208PS Transphorm 650v-cascode-gan-fet-tph3208ps Description: GANFET N-CH 650V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
TPH3208PS TPH3208PS Transphorm 650v_cascode_gan_fet_tph3208ps_20210308-1539033.pdf MOSFET GAN FET 650V 20A TO220
auf Bestellung 301 Stücke:
Lieferzeit 10-14 Tag (e)
TPH3212PS TPH3212PS Transphorm 650v-cascode-gan-fet-tph3212p Description: GANFET N-CH 650V 27A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 17A, 8V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 400uA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 400 V
Produkt ist nicht verfügbar
TPH3212PS TPH3212PS Transphorm 650v_cascode_gan_fet_tph3212p_20210308-1539031.pdf MOSFET GAN FET 650V 27A TO220
auf Bestellung 376 Stücke:
Lieferzeit 10-14 Tag (e)
TP65H300G4LSG-TR TP65H300G4LSG_v1.2-2.pdf
TP65H300G4LSG-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 6.5A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+2.88 EUR
Mindestbestellmenge: 3000
TP65H300G4LSG-TR 4156859.pdf
TP65H300G4LSG-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H300G4LSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 9.6 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H300G4LSG-TR TP65H300G4LSG_2v4-1838764.pdf
TP65H300G4LSG-TR
Hersteller: Transphorm
MOSFETs 650V, 240mOhm
auf Bestellung 558 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.6 EUR
10+ 5.54 EUR
25+ 5.35 EUR
100+ 4.49 EUR
250+ 4.33 EUR
500+ 4 EUR
1000+ 3.41 EUR
TP65H300G4LSG-TR TP65H300G4LSG_v1.2-2.pdf
TP65H300G4LSG-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 6.5A 3PQFN
Packaging: Cut Tape (CT)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
auf Bestellung 3449 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+5.91 EUR
10+ 4.96 EUR
100+ 4.01 EUR
500+ 3.57 EUR
1000+ 3.06 EUR
Mindestbestellmenge: 3
TP65H300G4LSG-TR 4156859.pdf
TP65H300G4LSG-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H300G4LSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 6.5 A, 0.312 ohm, 9.6 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 6.5A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 9.6nC
Bauform - Transistor: PQFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.312ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H480G4JSG TP65H480G4JSG_3v3-1920428.pdf
TP65H480G4JSG
Hersteller: Transphorm
MOSFETs GAN FET 650V 3.6 A PQFN56
auf Bestellung 495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.84 EUR
10+ 4.08 EUR
25+ 3.85 EUR
100+ 3.29 EUR
250+ 3.12 EUR
500+ 2.92 EUR
1000+ 2.5 EUR
TP65H480G4JSGB-TR TP65H480G4JSGB_1v3-3244301.pdf
TP65H480G4JSGB-TR
Hersteller: Transphorm
MOSFETs GAN FET 650V 3.6A QFN5x6
auf Bestellung 3898 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.79 EUR
10+ 3.98 EUR
100+ 3.15 EUR
250+ 2.92 EUR
500+ 2.66 EUR
1000+ 2.27 EUR
2500+ 2.16 EUR
TP65H480G4JSGB-TR datasheet-tp65h480g4jsgb-650v-gan-fet
TP65H480G4JSGB-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 3.6A QFN5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 400 V
Produkt ist nicht verfügbar
TP65H480G4JSGB-TR 4156862.pdf
TP65H480G4JSGB-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H480G4JSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 5 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.6A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 5nC
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.56ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H480G4JSGB-TR 4156862.pdf
TP65H480G4JSGB-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H480G4JSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 5 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H480G4JSGB-TR datasheet-tp65h480g4jsgb-650v-gan-fet
TP65H480G4JSGB-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 3.6A QFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 400 V
auf Bestellung 3938 Stücke:
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Anzahl Preis ohne MwSt
4+4.68 EUR
10+ 3.89 EUR
100+ 3.1 EUR
500+ 2.62 EUR
1000+ 2.22 EUR
2000+ 2.11 EUR
Mindestbestellmenge: 4
TP65H480G4JSG-TR 4156861.pdf
TP65H480G4JSG-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: SuperGaN Series
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TP65H480G4JSG-TR TP65H480G4JSG_3v3-1920428.pdf
TP65H480G4JSG-TR
Hersteller: Transphorm
GaN FETs 650V, 480mOhm
auf Bestellung 3761 Stücke:
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Anzahl Preis ohne MwSt
1+4.86 EUR
10+ 4.1 EUR
25+ 4.08 EUR
100+ 3.31 EUR
500+ 2.94 EUR
1000+ 2.52 EUR
2000+ 2.38 EUR
TP65H480G4JSG-TR 4156861.pdf
TP65H480G4JSG-TR
Hersteller: TRANSPHORM
Description: TRANSPHORM - TP65H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 3.6 A, 0.56 ohm, 9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.6A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 9nC
Bauform - Transistor: PQFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.56ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
TP65H480G4JSG-TR datasheet-tp65h480g4jsg
TP65H480G4JSG-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 3.6A 3PQFN
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 3-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.89 EUR
10+ 4.11 EUR
100+ 3.33 EUR
500+ 2.96 EUR
1000+ 2.53 EUR
2000+ 2.38 EUR
Mindestbestellmenge: 4
TP65H480G4JSG-TR datasheet-tp65h480g4jsg
TP65H480G4JSG-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 3.6A 3PQFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 3-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
TP90H050WS TP90H050WS_2v0-1837943.pdf
TP90H050WS
Hersteller: Transphorm
MOSFET 900V, 50mOhm
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+28.3 EUR
10+ 24.92 EUR
30+ 24.55 EUR
60+ 23.8 EUR
120+ 21.54 EUR
270+ 21.17 EUR
510+ 19.52 EUR
TP90H050WS tp90h050ws-1.pdf
TP90H050WS
Hersteller: Transphorm
Description: GANFET N-CH 900V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 700µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 600 V
auf Bestellung 208 Stücke:
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1+27.84 EUR
30+ 22.53 EUR
120+ 21.21 EUR
TP90H180PS datasheet-tp90h180ps-900v-gan-fet
TP90H180PS
Hersteller: Transphorm
Description: GANFET N-CH 900V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 10A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 600 V
auf Bestellung 92 Stücke:
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1+18.67 EUR
10+ 16.45 EUR
TPD3215M datasheet-tpd3215m-600v-cascode-gan-module
TPD3215M
Hersteller: Transphorm
Description: GANFET 2N-CH 600V 70A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Power - Max: 470W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 8V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V
Supplier Device Package: Module
Part Status: Obsolete
Produkt ist nicht verfügbar
TPH3202LD 600v-cascode-gan-fet-tph3202l
TPH3202LD
Hersteller: Transphorm
Description: GANFET N-CH 600V 9A 4PQFN
Packaging: Tube
Package / Case: 4-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
TPH3202LS 600v-cascode-gan-fet-tph3202l
TPH3202LS
Hersteller: Transphorm
Description: GANFET N-CH 600V 9A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
TPH3202LS 600v-cascode-gan-fet-tph3202l
Hersteller: Transphorm
Transphorm
Produkt ist nicht verfügbar
TPH3202PD 600v-cascode-gan-fet-tph3202p
TPH3202PD
Hersteller: Transphorm
Description: GANFET N-CH 600V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
TPH3202PS 600v-cascode-gan-fet-tph3202p
TPH3202PS
Hersteller: Transphorm
Description: GANFET N-CH 600V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
TPH3205WSB TPH3205WS.pdf
TPH3205WSB
Hersteller: Transphorm
Description: GANFET N-CH 650V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 8V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 700µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Produkt ist nicht verfügbar
TPH3205WSBQA 650v-aec-q101-cascode-gan-fet-tph3205wsbqa-2019103-1539027.pdf
TPH3205WSBQA
Hersteller: Transphorm
MOSFET GAN FET 650V 35A TO247
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+38.97 EUR
10+ 35.94 EUR
30+ 34.32 EUR
120+ 30.68 EUR
TPH3205WSBQA 650v-aec-q101-cascode-gan-fet-tph3205wsbqa
TPH3205WSBQA
Hersteller: Transphorm
Description: GANFET N-CH 650V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 22A, 8V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 700µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TPH3206LD 600v-cascode-gan-fet-tph3206ld
TPH3206LD
Hersteller: Transphorm
Description: GANFET N-CH 600V 17A PQFN
Packaging: Tube
Package / Case: 4-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
TPH3206LDB tph3206l-20190214.pdf
TPH3206LDB
Hersteller: Transphorm
Description: GANFET N-CH 650V 16A PQFN
Packaging: Tube
Package / Case: 4-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Produkt ist nicht verfügbar
TPH3206LDGB tph3206l-20190214.pdf
TPH3206LDGB
Hersteller: Transphorm
Description: GANFET N-CH 650V 16A PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
TPH3206LDG-TR tph3206ldg-20180327.pdf
Hersteller: Transphorm
Description: GANFET N-CH 600V 17A 3PQFN
Packaging: Tray
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
TPH3206LS TPH3206LS.pdf
TPH3206LS
Hersteller: Transphorm
Description: GANFET N-CH 600V 17A PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
TPH3206LSB tph3206l-20190214.pdf
TPH3206LSB
Hersteller: Transphorm
Description: GANFET N-CH 650V 16A PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Produkt ist nicht verfügbar
TPH3206LSGB tph3206lsgb.pdf
Hersteller: Transphorm
Description: GANFET N-CH 650V 16A 3PQFN
Packaging: Tray
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Produkt ist nicht verfügbar
TPH3206PD 600v-cascode-gan-fet-tph3206pd
TPH3206PD
Hersteller: Transphorm
Description: GANFET N-CH 600V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+17.04 EUR
Mindestbestellmenge: 2
TPH3206PS 600v-cascode-gan-fet-tph3206ps
TPH3206PS
Hersteller: Transphorm
Description: GANFET N-CH 600V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+15.42 EUR
50+ 12.3 EUR
100+ 11.01 EUR
Mindestbestellmenge: 2
TPH3206PSB tph3206psb-20171130.pdf
TPH3206PSB
Hersteller: Transphorm
Description: GANFET N-CH 650V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Produkt ist nicht verfügbar
TPH3206PSB 50v-cascode-gan-fet-tph3206psb-20171130-1539029.pdf
TPH3206PSB
Hersteller: Transphorm
MOSFET 650V, 150mO
auf Bestellung 514 Stücke:
Lieferzeit 10-14 Tag (e)
TPH3207WS tph3207w-20180717.pdf
TPH3207WS
Hersteller: Transphorm
Description: GANFET N-CH 650V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 8V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.65V @ 700µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2197 pF @ 400 V
Produkt ist nicht verfügbar
TPH3208LD tph3208l-20180526.pdf
TPH3208LD
Hersteller: Transphorm
Description: GANFET N-CH 650V 20A 4PQFN
Packaging: Tube
Package / Case: 4-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
TPH3208LDG tph3208l-20180526.pdf
TPH3208LDG
Hersteller: Transphorm
Description: GANFET N-CH 650V 20A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+17.72 EUR
TPH3208LS tph3208l-20180526.pdf
TPH3208LS
Hersteller: Transphorm
Description: GANFET N-CH 650V 20A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
TPH3208LSG tph3208l-20180526.pdf
TPH3208LSG
Hersteller: Transphorm
Description: GANFET N-CH 650V 20A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
TPH3208PD 650v-cascode-gan-fet-tph3208ps
TPH3208PD
Hersteller: Transphorm
Description: GANFET N-CH 650V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
TPH3208PS 650v-cascode-gan-fet-tph3208ps
TPH3208PS
Hersteller: Transphorm
Description: GANFET N-CH 650V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
TPH3208PS 650v_cascode_gan_fet_tph3208ps_20210308-1539033.pdf
TPH3208PS
Hersteller: Transphorm
MOSFET GAN FET 650V 20A TO220
auf Bestellung 301 Stücke:
Lieferzeit 10-14 Tag (e)
TPH3212PS 650v-cascode-gan-fet-tph3212p
TPH3212PS
Hersteller: Transphorm
Description: GANFET N-CH 650V 27A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 17A, 8V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 400uA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 400 V
Produkt ist nicht verfügbar
TPH3212PS 650v_cascode_gan_fet_tph3212p_20210308-1539031.pdf
TPH3212PS
Hersteller: Transphorm
MOSFET GAN FET 650V 27A TO220
auf Bestellung 376 Stücke:
Lieferzeit 10-14 Tag (e)
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