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TPD3215M Transphorm
![datasheet-tpd3215m-600v-cascode-gan-module](/images/adobe-acrobat.png)
Description: GANFET 2N-CH 600V 70A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Power - Max: 470W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 8V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V
Supplier Device Package: Module
Part Status: Obsolete
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Technische Details TPD3215M Transphorm
Description: GANFET 2N-CH 600V 70A MODULE, Packaging: Bulk, Package / Case: Module, Mounting Type: Through Hole, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), Power - Max: 470W, Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V, Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 8V, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V, Supplier Device Package: Module, Part Status: Obsolete.