![TP65H070LDG-TR TP65H070LDG-TR](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2516/MFG_PQFN_8x8.jpg)
TP65H070LDG-TR Transphorm
![datasheet-tp65h070l-650v-gan-fet](/images/adobe-acrobat.png)
Description: 650 V 25 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
500+ | 14.02 EUR |
1000+ | 12.86 EUR |
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Technische Details TP65H070LDG-TR Transphorm
Description: 650 V 25 A GAN FET, Packaging: Tape & Reel (TR), Package / Case: 3-PowerDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 700µA, Supplier Device Package: 3-PQFN (8x8), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V.
Weitere Produktangebote TP65H070LDG-TR nach Preis ab 13.08 EUR bis 20.66 EUR
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TP65H070LDG-TR | Hersteller : Transphorm |
![]() Packaging: Cut Tape (CT) Package / Case: 3-PowerDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 700µA Supplier Device Package: 3-PQFN (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V |
auf Bestellung 1650 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H070LDG-TR | Hersteller : Transphorm |
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auf Bestellung 377 Stücke: Lieferzeit 10-14 Tag (e) |
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