![TP65H150G4LSG TP65H150G4LSG](https://www.mouser.com/images/transphorm/lrg/PQFN88_SPL.jpg)
auf Bestellung 2163 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 8.06 EUR |
10+ | 6.99 EUR |
25+ | 6.78 EUR |
100+ | 5.7 EUR |
250+ | 5.53 EUR |
500+ | 4.96 EUR |
1000+ | 4.22 EUR |
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Technische Details TP65H150G4LSG Transphorm
Description: GAN FET N-CH 650V PQFN, Packaging: Cut Tape (CT), Package / Case: 3-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 500µA, Supplier Device Package: 3-PQFN (8x8), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V.
Weitere Produktangebote TP65H150G4LSG nach Preis ab 4.34 EUR bis 8.22 EUR
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TP65H150G4LSG | Hersteller : Transphorm |
![]() Packaging: Cut Tape (CT) Package / Case: 3-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 500µA Supplier Device Package: 3-PQFN (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V |
auf Bestellung 2774 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H150G4LSG | Hersteller : Transphorm |
![]() Packaging: Tray Package / Case: 3-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 500µA Supplier Device Package: 3-PQFN (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V |
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