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12pF 50V NP0 5% 0805 4k/reel (C0805N120J500NT-Hitano) (Keramikkondensator SMD) 12pF 50V NP0 5% 0805 4k/reel (C0805N120J500NT-Hitano) (Keramikkondensator SMD)
Produktcode: 1205
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Hitano NPO.pdf Kondensatoren SMD > Kondensatoren 0805
Kapazität: 12pF
Nennspannung: 50V
Dielektrikum: NP0
Präzision: ±5% J
Größentyp: 0805
№ 7: 8532240000
auf Bestellung 9044 Stück:
Lieferzeit 21-28 Tag (e)
10+0.03 EUR
100+0.01 EUR
1000+0.01 EUR
10000+0.01 EUR
Mindestbestellmenge: 10
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FGA25N120ANTD FGA25N120ANTD
Produktcode: 34959
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FAIR FGA25N120ANTD FAIR IGPT.pdf Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-3P
Vces: 1200
Vce: 2
Ic 25: 50
Ic 100: 25
Pd 25: 312
td(on)/td(off) 100-150 Grad: 50/190
auf Bestellung 220 Stück:
Lieferzeit 21-28 Tag (e)
1+2.70 EUR
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0805N120J500LT Sincera Конденсатор керамический C-0805 12 пФ 5% 50 В NP0 RoHs
auf Bestellung 18740 Stücke:
Lieferzeit 14-21 Tag (e)
1+0.04 EUR
10+0.03 EUR
100+0.03 EUR
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1455N1201 1455N1201 HAMMOND 1455N1201.pdf Category: Enclosures with Panel
Description: Enclosure: with panel; 1455; X: 103mm; Y: 120mm; Z: 53mm; aluminium
Type of enclosure: with panel
Dimension Y: 120mm
Dimension X: 103mm
Dimension Z: 53mm
Panel colour: grey
Enclosure series: 1455
Panel material: aluminium
Frame colour: black
Enclosure material: aluminium
Body colour: grey
Anzahl je Verpackung: 1 Stücke
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)
4+18.53 EUR
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1455N1201 HAMMOND 1455 Panel enclosure 1455 series; Aluminium; Grey; 120x103x53mm; 1455N1201 Hammond OB HM-1455N1201
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
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1+46.36 EUR
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1455N1201BK 1455N1201BK HAMMOND 1455N1201.pdf Category: Enclosures with Panel
Description: Enclosure: with panel; 1455; X: 103mm; Y: 120mm; Z: 53mm; aluminium
Type of enclosure: with panel
Dimension Y: 120mm
Dimension X: 103mm
Dimension Z: 53mm
Panel colour: black
Enclosure series: 1455
Panel material: aluminium
Frame colour: black
Enclosure material: aluminium
Body colour: black
auf Bestellung 34 Stücke:
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4+21.31 EUR
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1455N1201BK 1455N1201BK HAMMOND 1455N1201.pdf Category: Enclosures with Panel
Description: Enclosure: with panel; 1455; X: 103mm; Y: 120mm; Z: 53mm; aluminium
Type of enclosure: with panel
Dimension Y: 120mm
Dimension X: 103mm
Dimension Z: 53mm
Panel colour: black
Enclosure series: 1455
Panel material: aluminium
Frame colour: black
Enclosure material: aluminium
Body colour: black
Anzahl je Verpackung: 1 Stücke
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4+21.31 EUR
50+21.16 EUR
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1455N1202 1455N1202 HAMMOND 1455N1202.pdf Category: Enclosures with Panel
Description: Enclosure: with panel; 1455; X: 103mm; Y: 120mm; Z: 53mm; aluminium
Type of enclosure: with panel
Dimension Y: 120mm
Dimension X: 103mm
Dimension Z: 53mm
Panel colour: black
Enclosure series: 1455
Panel material: ABS
Enclosure material: aluminium
Body colour: grey
auf Bestellung 4 Stücke:
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4+17.88 EUR
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1455N1202 1455N1202 HAMMOND 1455N1202.pdf Category: Enclosures with Panel
Description: Enclosure: with panel; 1455; X: 103mm; Y: 120mm; Z: 53mm; aluminium
Type of enclosure: with panel
Dimension Y: 120mm
Dimension X: 103mm
Dimension Z: 53mm
Panel colour: black
Enclosure series: 1455
Panel material: ABS
Enclosure material: aluminium
Body colour: grey
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
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50+17.49 EUR
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1455N1202BK 1455N1202BK HAMMOND 1455N1202.pdf Category: Enclosures with Panel
Description: Enclosure: with panel; 1455; X: 103mm; Y: 120mm; Z: 53mm; aluminium
Type of enclosure: with panel
Dimension Y: 120mm
Dimension X: 103mm
Dimension Z: 53mm
Panel colour: black
Enclosure series: 1455
Panel material: ABS
Enclosure material: aluminium
Body colour: black
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.96 EUR
Mindestbestellmenge: 4
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1455N1202BK 1455N1202BK HAMMOND 1455N1202.pdf Category: Enclosures with Panel
Description: Enclosure: with panel; 1455; X: 103mm; Y: 120mm; Z: 53mm; aluminium
Type of enclosure: with panel
Dimension Y: 120mm
Dimension X: 103mm
Dimension Z: 53mm
Panel colour: black
Enclosure series: 1455
Panel material: ABS
Enclosure material: aluminium
Body colour: black
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
4+18.96 EUR
Mindestbestellmenge: 4
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BGH75N120HF1 BGH75N120HF1 BASiC SEMICONDUCTOR BGH75N120HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 568W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 398nC
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 200A
Turn-on time: 140ns
Turn-off time: 443ns
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.34 EUR
7+10.37 EUR
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BGH75N120HF1 BGH75N120HF1 BASiC SEMICONDUCTOR BGH75N120HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 568W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 398nC
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 200A
Turn-on time: 140ns
Turn-off time: 443ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.34 EUR
7+10.37 EUR
30+10.32 EUR
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FGL35N120FTDTU FGL35N120FTDTU Fairchild Semiconductor FAIRS46126-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 1200V 70A HPM F2
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 337 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
Supplier Device Package: HPM F2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/172ns
Switching Energy: 2.5mJ (on), 1.7mJ (off)
Test Condition: 600V, 35A, 10Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 368 W
auf Bestellung 15470 Stücke:
Lieferzeit 10-14 Tag (e)
50+10.17 EUR
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FGL35N120FTDTU FGL35N120FTDTU onsemi fgl35n120ftd-d.pdf Description: IGBT TRENCH FS 1200V 70A TO-264
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 337 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
Supplier Device Package: TO-264-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/172ns
Switching Energy: 2.5mJ (on), 1.7mJ (off)
Test Condition: 600V, 35A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 368 W
auf Bestellung 1754 Stücke:
Lieferzeit 10-14 Tag (e)
50+10.17 EUR
Mindestbestellmenge: 50
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HGT1S15N120C3 HGT1S15N120C3 Harris Corporation HRISS689-1.pdf?t.download=true&u=5oefqw Description: IGBT 1200V 35A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
Supplier Device Package: TO-262 (I2PAK)
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 164 W
auf Bestellung 4004 Stücke:
Lieferzeit 10-14 Tag (e)
75+6.75 EUR
Mindestbestellmenge: 75
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HGT1S15N120C3S Harris Corporation HRISS689-1.pdf?t.download=true&u=5oefqw Description: IGBT 1200V 35A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
Supplier Device Package: TO-263AB
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 164 W
auf Bestellung 695 Stücke:
Lieferzeit 10-14 Tag (e)
75+6.75 EUR
Mindestbestellmenge: 75
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HGTG15N120C3 HGTG15N120C3 Harris Corporation HRISS689-1.pdf?t.download=true&u=5oefqw Description: IGBT 1200V 35A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
Supplier Device Package: TO-247
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 164 W
auf Bestellung 517 Stücke:
Lieferzeit 10-14 Tag (e)
70+7.25 EUR
Mindestbestellmenge: 70
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HGTG5N120BND HGTG5N120BND onsemi hgtp5n120bnd-d.pdf Description: IGBT NPT 1200V 21A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/160ns
Switching Energy: 450µJ (on), 390µJ (off)
Test Condition: 960V, 5A, 25Ohm, 15V
Gate Charge: 53 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 167 W
auf Bestellung 679 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.00 EUR
30+3.85 EUR
120+3.16 EUR
510+2.66 EUR
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IGB15N120S7ATMA1 IGB15N120S7ATMA1 Infineon Technologies Infineon-IGB15N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb7408c326a Description: IGBT TRENCH FS 1200V 34A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/156ns
Switching Energy: 900µJ (on), 680µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 141 W
auf Bestellung 740 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.28 EUR
10+6.19 EUR
100+4.44 EUR
500+3.69 EUR
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IGQ75N120S7XKSA1 IGQ75N120S7XKSA1 Infineon Technologies Infineon-IGQ75N120S7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c850f4bee0185a59a17a3786a Description: IGBT TRENCH 1200V 154A TO247-55
Packaging: Tube
Part Status: Active
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-55
IGBT Type: Trench
Td (on/off) @ 25°C: 38ns/190ns
Switching Energy: 5.13mJ (on), 3.48mJ (off)
Test Condition: 600V, 75A, 2.1Ohm, 15V
Gate Charge: 450 nC
Current - Collector (Ic) (Max): 154 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 630 W
auf Bestellung 718 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.06 EUR
30+11.65 EUR
120+10.30 EUR
510+9.76 EUR
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IGW15N120H3 Infineon INFN-S-A0000149040-1.pdf?t.download=true&u=5oefqw Транз. IGBT UltraFast TO247-3 Uces=1200V; Ic=30A; Pdmax=217W
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
1+20.98 EUR
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IGW15N120H3FKSA1 IGW15N120H3FKSA1 INFINEON TECHNOLOGIES IGW15N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 217W
Kind of package: tube
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.93 EUR
21+3.50 EUR
22+3.30 EUR
Mindestbestellmenge: 15
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IGW15N120H3FKSA1 Infineon DS_IG15N120H3_1_1_final.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304325305e6d012591b22bb86ffb Trans IGBT ; 1200V; 20V; 30A; 60A; 217W; 5,0V~6,5V; 75nC; -40°C~175°C; Odpowiednik: IGW15N120H3; IGW15N120H3FKSA1 TIGW15n120h3
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
4+9.18 EUR
Mindestbestellmenge: 4
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IGW15N120H3FKSA1 IGW15N120H3FKSA1 INFINEON TECHNOLOGIES IGW15N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 217W
Kind of package: tube
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 54 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.93 EUR
21+3.50 EUR
22+3.30 EUR
Mindestbestellmenge: 15
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IGW15N120H3FKSA1 IGW15N120H3FKSA1 Infineon Technologies DS_IG15N120H3_1_1_final.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304325305e6d012591b22bb86ffb Description: IGBT TRENCH FS 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/260ns
Switching Energy: 1.55mJ
Test Condition: 600V, 15A, 35Ohm, 15V
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 217 W
auf Bestellung 161 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.32 EUR
30+4.65 EUR
120+3.84 EUR
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IGW25N120H3FKSA1 IGW25N120H3FKSA1 INFINEON TECHNOLOGIES IGW25N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 326W
Kind of package: tube
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.91 EUR
16+4.50 EUR
17+4.26 EUR
Mindestbestellmenge: 13
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IGW25N120H3FKSA1 IGW25N120H3FKSA1 INFINEON TECHNOLOGIES IGW25N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 326W
Kind of package: tube
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.91 EUR
16+4.50 EUR
17+4.26 EUR
150+4.09 EUR
Mindestbestellmenge: 13
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IGW25N120H3FKSA1 Infineon DS_IG25N120H3_1_1_final.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304325305e6d01258d0f50a8369e Transistor IGBT ; 1200V; 20V; 50A; 100A; 326W; 5,0V~6,5V; 115nC; -40°C~175°C; IGW25N120H3FKSA1 IGW25N120H3 TIGW25n120h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
5+13.45 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IGW25N120H3FKSA1 IGW25N120H3FKSA1 Infineon Technologies DS_IG25N120H3_1_1_final.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304325305e6d01258d0f50a8369e Description: IGBT TRENCH FS 1200V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/277ns
Switching Energy: 2.65mJ
Test Condition: 600V, 25A, 23Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 326 W
auf Bestellung 1445 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.96 EUR
30+5.65 EUR
120+4.70 EUR
510+4.00 EUR
1020+3.87 EUR
Mindestbestellmenge: 2
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IHW15N120E1XKSA1 IHW15N120E1XKSA1 INFINEON TECHNOLOGIES IHW15N120E1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 62.2W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 62.2W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 90nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 1940ns
Turn-off time: 1450ns
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.23 EUR
30+2.39 EUR
32+2.26 EUR
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IHW15N120E1XKSA1 IHW15N120E1XKSA1 INFINEON TECHNOLOGIES IHW15N120E1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 62.2W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 62.2W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 90nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 1940ns
Turn-off time: 1450ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 47 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.23 EUR
30+2.39 EUR
32+2.26 EUR
120+2.17 EUR
480+2.16 EUR
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IHW15N120R3 Infineon Transistor IGBT ; 1200V; 20V; 30A; 45A; 254W; 5,1V~6,4V; 165nC; -40°C~175°C; IHW15N120R3FKSA1 IHW15N120R3 TIHW15n120r3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
10+5.68 EUR
Mindestbestellmenge: 10
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IHW15N120R3FKSA1 IHW15N120R3FKSA1 INFINEON TECHNOLOGIES IHW15N120R3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 127W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 127W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 165nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-off time: 346ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IHW15N120R3FKSA1 IHW15N120R3FKSA1 Infineon Technologies IHW15N120R3_Rev2_2G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304320d39d590121814cb068197b Description: IGBT TRENCH 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/300ns
Switching Energy: 700µJ (off)
Test Condition: 600V, 15A, 14.6Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 254 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.23 EUR
30+4.00 EUR
120+3.28 EUR
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IHW25N120E1XKSA1 IHW25N120E1XKSA1 INFINEON TECHNOLOGIES IHW25N120E1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 92.4W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 147nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Turn-off time: 2004ns
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.90 EUR
27+2.69 EUR
29+2.55 EUR
60+2.53 EUR
120+2.43 EUR
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IKQ75N120CH3XKSA1 IKQ75N120CH3XKSA1 Infineon Technologies Infineon-IKQ75N120CH3-DS-v02_01-EN.pdf?fileId=5546d4625bd71aa0015bd817a3920534 Description: IGBT 1200V 150A TO247-3-46
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A
Supplier Device Package: PG-TO247-3-46
Td (on/off) @ 25°C: 34ns/282ns
Switching Energy: 6.4mJ (on), 2.8mJ (off)
Test Condition: 600V, 75A, 6Ohm, 15V
Gate Charge: 370 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 938 W
auf Bestellung 212 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.82 EUR
30+13.20 EUR
120+11.32 EUR
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IKQ75N120CH7XKSA1 IKQ75N120CH7XKSA1 Infineon Technologies Infineon-IKQ75N120CH7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c84a33f400184e2a14ad72d65 Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 149 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-3-U01
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 56ns/470ns
Switching Energy: 5.28mJ (on), 1.76mJ (off)
Gate Charge: 518 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 549 W
auf Bestellung 478 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.35 EUR
30+12.89 EUR
120+11.04 EUR
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IKQ75N120CS6XKSA1 IKQ75N120CS6XKSA1 INFINEON TECHNOLOGIES IKQ75N120CS6XKSA1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Mounting: THT
Type of transistor: IGBT
Power dissipation: 440W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 530nC
Technology: TRENCHSTOP™ 6
Case: PG-TO247-3-46
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.20 EUR
9+8.15 EUR
10+7.71 EUR
Mindestbestellmenge: 6
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IKQ75N120CS6XKSA1 IKQ75N120CS6XKSA1 INFINEON TECHNOLOGIES IKQ75N120CS6XKSA1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Mounting: THT
Type of transistor: IGBT
Power dissipation: 440W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 530nC
Technology: TRENCHSTOP™ 6
Case: PG-TO247-3-46
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.20 EUR
9+8.15 EUR
10+7.71 EUR
1020+7.39 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKQ75N120CS6XKSA1 IKQ75N120CS6XKSA1 Infineon Technologies Infineon-IKQ75N120CS6-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01638802035216c6 Description: IGBT TRENCH FS 1200V 150A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 440 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/300ns
Switching Energy: 5.15mJ (on), 2.95mJ (off)
Test Condition: 600V, 75A, 4Ohm, 15V
Gate Charge: 530 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 880 W
auf Bestellung 2266 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.09 EUR
30+10.77 EUR
120+9.17 EUR
510+8.52 EUR
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IKQ75N120CS7XKSA1 IKQ75N120CS7XKSA1 Infineon Technologies Infineon-IKQ75N120CS7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c850f4bee0185a559ec887495 Description: IGBT TRENCH 1200V 154A TO247-46
Packaging: Tube
Part Status: Active
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench
Td (on/off) @ 25°C: 38ns/190ns
Switching Energy: 5.13mJ (on), 3.48mJ (off)
Test Condition: 600V, 75A, 2.1Ohm, 15V
Gate Charge: 450 nC
Current - Collector (Ic) (Max): 154 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 630 W
auf Bestellung 288 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.51 EUR
30+13.66 EUR
120+11.72 EUR
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IKQ75N120CT2XKSA1 IKQ75N120CT2XKSA1 Infineon Technologies Infineon-IKQ75N120CT2-DS-v02_03-EN.pdf?fileId=5546d4625bd71aa0015bd81797280532 Description: IGBT TRENCH FS 1200V 150A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/328ns
Switching Energy: 6.7mJ (on), 4.1mJ (off)
Test Condition: 600V, 75A, 6Ohm, 15V
Gate Charge: 370 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 938 W
auf Bestellung 185 Stücke:
Lieferzeit 10-14 Tag (e)
1+30.06 EUR
30+18.71 EUR
120+16.46 EUR
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IKW15N120BH6XKSA1 IKW15N120BH6XKSA1 INFINEON TECHNOLOGIES IKW15N120BH6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 100W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 92nC
Technology: TRENCHSTOP™ 6
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 60A
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.68 EUR
32+2.27 EUR
34+2.14 EUR
Mindestbestellmenge: 20
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IKW15N120BH6XKSA1 IKW15N120BH6XKSA1 INFINEON TECHNOLOGIES IKW15N120BH6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 100W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 92nC
Technology: TRENCHSTOP™ 6
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 138 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.68 EUR
32+2.27 EUR
34+2.14 EUR
600+2.06 EUR
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IKW15N120CS7XKSA1 IKW15N120CS7XKSA1 Infineon Technologies Infineon-IKW15N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97db2b905a6 Description: IGBT TRENCH FS 1200V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 135 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/170ns
Switching Energy: 750µJ (on), 700µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 176 W
auf Bestellung 342 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.51 EUR
30+5.98 EUR
120+4.98 EUR
Mindestbestellmenge: 2
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IKW15N120H3FKSA1 Infineon IKW15N120H3_Rev1_2G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304325305e6d01258df9167d3741 Trans IGBT ; 1200V; 20V; 30A; 60A; 217W; 5,0V~6,5V; 75nC; -40°C~175°C; Replacement: IKW15N120H3FKSA1; IKW15N120H3; IKW15N120H3FKSA1 TIKW15n120h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
5+11.60 EUR
Mindestbestellmenge: 5
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IKW15N120H3FKSA1 IKW15N120H3FKSA1 Infineon Technologies IKW15N120H3_Rev1_2G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304325305e6d01258df9167d3741 Description: IGBT TRENCH FS 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 260 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/260ns
Switching Energy: 1.55mJ
Test Condition: 600V, 15A, 35Ohm, 15V
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 217 W
auf Bestellung 173 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.35 EUR
30+5.88 EUR
120+4.90 EUR
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IKW15N120T2FKSA1 IKW15N120T2FKSA1 INFINEON TECHNOLOGIES IKW15N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d2d43acd Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 235W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 93nC
Technology: TRENCHSTOP™ 2
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Turn-on time: 57ns
Turn-off time: 457ns
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.22 EUR
13+5.59 EUR
17+4.39 EUR
18+4.15 EUR
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IKW15N120T2FKSA1 IKW15N120T2FKSA1 INFINEON TECHNOLOGIES IKW15N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d2d43acd Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 235W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 93nC
Technology: TRENCHSTOP™ 2
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Turn-on time: 57ns
Turn-off time: 457ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.22 EUR
13+5.59 EUR
17+4.39 EUR
18+4.15 EUR
Mindestbestellmenge: 12
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IKW25N120CS7XKSA1 IKW25N120CS7XKSA1 Infineon Technologies Infineon-IKW25N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97da3d005a3 Description: IGBT TRENCH FS 1200V 55A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/160ns
Switching Energy: 1.2mJ (on), 1.1mJ (off)
Test Condition: 600V, 25A, 6Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
auf Bestellung 341 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.02 EUR
30+6.91 EUR
120+5.79 EUR
Mindestbestellmenge: 2
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IKW25N120H3 Infineon Transistor IGBT ; 1200V; 20V; 50A; 100A; 326W; 5,0V~6,5V; 115nC; -40°C~175°C; IKW25N120H3FKSA1 IKW25N120H3 TIKW25n120h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
5+13.06 EUR
Mindestbestellmenge: 5
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IKW25N120H3FKSA1 IKW25N120H3FKSA1 INFINEON TECHNOLOGIES IKW25N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 326W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 115nC
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
Mindestbestellmenge: 4
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IKW25N120H3FKSA1 IKW25N120H3FKSA1 INFINEON TECHNOLOGIES IKW25N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 326W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 115nC
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
4+17.88 EUR
8+8.94 EUR
30+5.48 EUR
60+5.45 EUR
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IKW25N120H3FKSA1 IKW25N120H3FKSA1 Infineon Technologies Infineon-IKW25N120H3-DS-v01_02-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a304340e762c80140ed6d64cf2df4 Description: IGBT TRENCH FS 1200V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 290 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/277ns
Switching Energy: 2.65mJ
Test Condition: 600V, 25A, 23Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 326 W
auf Bestellung 129 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.27 EUR
30+7.06 EUR
120+5.92 EUR
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IKW25N120T2FKSA1 IKW25N120T2FKSA1 INFINEON TECHNOLOGIES IKW25N120T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 349W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKW25N120T2FKSA1 Infineon IKW25N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d5a63ad1 Transistor IGBT ; 1200V; 20V; 50A; 100A; 349W; 5,2V~6,4V; 120nC; -40°C~175°C;   IKW25N120T2 TIKW25n120t2
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.00 EUR
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IKW25N120T2FKSA1 Infineon IKW25N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d5a63ad1 Транз. IGBT UltraFast TO247-3 Uces=1200V; Ic=50A; Pdmax=349W
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
1+35.67 EUR
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IKW75N120CH7XKSA1 IKW75N120CH7XKSA1 Infineon Technologies Infineon-IKW75N120CH7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c84a33f400184e1ecb5240a3a Description: IGBT TRENCH FS 1200V 92A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 145 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-3-U06
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 55ns/461ns
Switching Energy: 4.22mJ (on), 1.66mJ (off)
Gate Charge: 535 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 549 W
auf Bestellung 242 Stücke:
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1+17.64 EUR
30+10.48 EUR
120+8.91 EUR
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IKY75N120CH3XKSA1 IKY75N120CH3XKSA1 Infineon Technologies Infineon-IKY75N120CH3-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015bd8176aea052c Description: IGBT 1200V 150A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 292 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 38ns/303ns
Switching Energy: 3.4mJ (on), 2.9mJ (off)
Test Condition: 600V, 75A, 6Ohm, 15V
Gate Charge: 370 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 938 W
auf Bestellung 278 Stücke:
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1+23.13 EUR
30+15.66 EUR
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12pF 50V NP0 5% 0805 4k/reel (C0805N120J500NT-Hitano) (Keramikkondensator SMD)
Produktcode: 1205
zu Favoriten hinzufügen Lieblingsprodukt

NPO.pdf
12pF 50V NP0 5% 0805 4k/reel (C0805N120J500NT-Hitano) (Keramikkondensator SMD)
Hersteller: Hitano
Kondensatoren SMD > Kondensatoren 0805
Kapazität: 12pF
Nennspannung: 50V
Dielektrikum: NP0
Präzision: ±5% J
Größentyp: 0805
№ 7: 8532240000
auf Bestellung 9044 Stück:
Lieferzeit 21-28 Tag (e)
Anzahl Preis
10+0.03 EUR
100+0.01 EUR
1000+0.01 EUR
10000+0.01 EUR
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FGA25N120ANTD
Produktcode: 34959
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FGA25N120ANTD FAIR IGPT.pdf
FGA25N120ANTD
Hersteller: FAIR
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-3P
Vces: 1200
Vce: 2
Ic 25: 50
Ic 100: 25
Pd 25: 312
td(on)/td(off) 100-150 Grad: 50/190
auf Bestellung 220 Stück:
Lieferzeit 21-28 Tag (e)
Anzahl Preis
1+2.70 EUR
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0805N120J500LT
Hersteller: Sincera
Конденсатор керамический C-0805 12 пФ 5% 50 В NP0 RoHs
auf Bestellung 18740 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+0.04 EUR
10+0.03 EUR
100+0.03 EUR
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1455N1201 1455N1201.pdf
1455N1201
Hersteller: HAMMOND
Category: Enclosures with Panel
Description: Enclosure: with panel; 1455; X: 103mm; Y: 120mm; Z: 53mm; aluminium
Type of enclosure: with panel
Dimension Y: 120mm
Dimension X: 103mm
Dimension Z: 53mm
Panel colour: grey
Enclosure series: 1455
Panel material: aluminium
Frame colour: black
Enclosure material: aluminium
Body colour: grey
Anzahl je Verpackung: 1 Stücke
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+18.53 EUR
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1455N1201 1455
Hersteller: HAMMOND
Panel enclosure 1455 series; Aluminium; Grey; 120x103x53mm; 1455N1201 Hammond OB HM-1455N1201
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
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Anzahl Preis
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1455N1201BK 1455N1201.pdf
1455N1201BK
Hersteller: HAMMOND
Category: Enclosures with Panel
Description: Enclosure: with panel; 1455; X: 103mm; Y: 120mm; Z: 53mm; aluminium
Type of enclosure: with panel
Dimension Y: 120mm
Dimension X: 103mm
Dimension Z: 53mm
Panel colour: black
Enclosure series: 1455
Panel material: aluminium
Frame colour: black
Enclosure material: aluminium
Body colour: black
auf Bestellung 34 Stücke:
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Anzahl Preis
4+21.31 EUR
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1455N1201BK 1455N1201.pdf
1455N1201BK
Hersteller: HAMMOND
Category: Enclosures with Panel
Description: Enclosure: with panel; 1455; X: 103mm; Y: 120mm; Z: 53mm; aluminium
Type of enclosure: with panel
Dimension Y: 120mm
Dimension X: 103mm
Dimension Z: 53mm
Panel colour: black
Enclosure series: 1455
Panel material: aluminium
Frame colour: black
Enclosure material: aluminium
Body colour: black
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
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4+21.31 EUR
50+21.16 EUR
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1455N1202 1455N1202.pdf
1455N1202
Hersteller: HAMMOND
Category: Enclosures with Panel
Description: Enclosure: with panel; 1455; X: 103mm; Y: 120mm; Z: 53mm; aluminium
Type of enclosure: with panel
Dimension Y: 120mm
Dimension X: 103mm
Dimension Z: 53mm
Panel colour: black
Enclosure series: 1455
Panel material: ABS
Enclosure material: aluminium
Body colour: grey
auf Bestellung 4 Stücke:
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Anzahl Preis
4+17.88 EUR
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1455N1202 1455N1202.pdf
1455N1202
Hersteller: HAMMOND
Category: Enclosures with Panel
Description: Enclosure: with panel; 1455; X: 103mm; Y: 120mm; Z: 53mm; aluminium
Type of enclosure: with panel
Dimension Y: 120mm
Dimension X: 103mm
Dimension Z: 53mm
Panel colour: black
Enclosure series: 1455
Panel material: ABS
Enclosure material: aluminium
Body colour: grey
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+17.88 EUR
50+17.49 EUR
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1455N1202BK 1455N1202.pdf
1455N1202BK
Hersteller: HAMMOND
Category: Enclosures with Panel
Description: Enclosure: with panel; 1455; X: 103mm; Y: 120mm; Z: 53mm; aluminium
Type of enclosure: with panel
Dimension Y: 120mm
Dimension X: 103mm
Dimension Z: 53mm
Panel colour: black
Enclosure series: 1455
Panel material: ABS
Enclosure material: aluminium
Body colour: black
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.96 EUR
Mindestbestellmenge: 4
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1455N1202BK 1455N1202.pdf
1455N1202BK
Hersteller: HAMMOND
Category: Enclosures with Panel
Description: Enclosure: with panel; 1455; X: 103mm; Y: 120mm; Z: 53mm; aluminium
Type of enclosure: with panel
Dimension Y: 120mm
Dimension X: 103mm
Dimension Z: 53mm
Panel colour: black
Enclosure series: 1455
Panel material: ABS
Enclosure material: aluminium
Body colour: black
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+18.96 EUR
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BGH75N120HF1 BGH75N120HF1.pdf
BGH75N120HF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 568W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 398nC
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 200A
Turn-on time: 140ns
Turn-off time: 443ns
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.34 EUR
7+10.37 EUR
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BGH75N120HF1 BGH75N120HF1.pdf
BGH75N120HF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 568W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 398nC
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 200A
Turn-on time: 140ns
Turn-off time: 443ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+14.34 EUR
7+10.37 EUR
30+10.32 EUR
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FGL35N120FTDTU FAIRS46126-1.pdf?t.download=true&u=5oefqw
FGL35N120FTDTU
Hersteller: Fairchild Semiconductor
Description: IGBT TRENCH FS 1200V 70A HPM F2
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 337 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
Supplier Device Package: HPM F2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/172ns
Switching Energy: 2.5mJ (on), 1.7mJ (off)
Test Condition: 600V, 35A, 10Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 368 W
auf Bestellung 15470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+10.17 EUR
Mindestbestellmenge: 50
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FGL35N120FTDTU fgl35n120ftd-d.pdf
FGL35N120FTDTU
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 70A TO-264
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 337 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
Supplier Device Package: TO-264-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/172ns
Switching Energy: 2.5mJ (on), 1.7mJ (off)
Test Condition: 600V, 35A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 368 W
auf Bestellung 1754 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+10.17 EUR
Mindestbestellmenge: 50
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HGT1S15N120C3 HRISS689-1.pdf?t.download=true&u=5oefqw
HGT1S15N120C3
Hersteller: Harris Corporation
Description: IGBT 1200V 35A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
Supplier Device Package: TO-262 (I2PAK)
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 164 W
auf Bestellung 4004 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
75+6.75 EUR
Mindestbestellmenge: 75
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HGT1S15N120C3S HRISS689-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: IGBT 1200V 35A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
Supplier Device Package: TO-263AB
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 164 W
auf Bestellung 695 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
75+6.75 EUR
Mindestbestellmenge: 75
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HGTG15N120C3 HRISS689-1.pdf?t.download=true&u=5oefqw
HGTG15N120C3
Hersteller: Harris Corporation
Description: IGBT 1200V 35A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
Supplier Device Package: TO-247
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 164 W
auf Bestellung 517 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
70+7.25 EUR
Mindestbestellmenge: 70
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HGTG5N120BND hgtp5n120bnd-d.pdf
HGTG5N120BND
Hersteller: onsemi
Description: IGBT NPT 1200V 21A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/160ns
Switching Energy: 450µJ (on), 390µJ (off)
Test Condition: 960V, 5A, 25Ohm, 15V
Gate Charge: 53 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 167 W
auf Bestellung 679 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.00 EUR
30+3.85 EUR
120+3.16 EUR
510+2.66 EUR
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IGB15N120S7ATMA1 Infineon-IGB15N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb7408c326a
IGB15N120S7ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 34A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/156ns
Switching Energy: 900µJ (on), 680µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 141 W
auf Bestellung 740 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.28 EUR
10+6.19 EUR
100+4.44 EUR
500+3.69 EUR
Mindestbestellmenge: 2
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IGQ75N120S7XKSA1 Infineon-IGQ75N120S7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c850f4bee0185a59a17a3786a
IGQ75N120S7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 154A TO247-55
Packaging: Tube
Part Status: Active
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-55
IGBT Type: Trench
Td (on/off) @ 25°C: 38ns/190ns
Switching Energy: 5.13mJ (on), 3.48mJ (off)
Test Condition: 600V, 75A, 2.1Ohm, 15V
Gate Charge: 450 nC
Current - Collector (Ic) (Max): 154 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 630 W
auf Bestellung 718 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.06 EUR
30+11.65 EUR
120+10.30 EUR
510+9.76 EUR
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IGW15N120H3 INFN-S-A0000149040-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon
Транз. IGBT UltraFast TO247-3 Uces=1200V; Ic=30A; Pdmax=217W
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+20.98 EUR
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IGW15N120H3FKSA1 IGW15N120H3-DTE.pdf
IGW15N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 217W
Kind of package: tube
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.93 EUR
21+3.50 EUR
22+3.30 EUR
Mindestbestellmenge: 15
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IGW15N120H3FKSA1 DS_IG15N120H3_1_1_final.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304325305e6d012591b22bb86ffb
Hersteller: Infineon
Trans IGBT ; 1200V; 20V; 30A; 60A; 217W; 5,0V~6,5V; 75nC; -40°C~175°C; Odpowiednik: IGW15N120H3; IGW15N120H3FKSA1 TIGW15n120h3
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+9.18 EUR
Mindestbestellmenge: 4
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IGW15N120H3FKSA1 IGW15N120H3-DTE.pdf
IGW15N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 217W
Kind of package: tube
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 54 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+4.93 EUR
21+3.50 EUR
22+3.30 EUR
Mindestbestellmenge: 15
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IGW15N120H3FKSA1 DS_IG15N120H3_1_1_final.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304325305e6d012591b22bb86ffb
IGW15N120H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/260ns
Switching Energy: 1.55mJ
Test Condition: 600V, 15A, 35Ohm, 15V
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 217 W
auf Bestellung 161 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.32 EUR
30+4.65 EUR
120+3.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGW25N120H3FKSA1 IGW25N120H3-DTE.pdf
IGW25N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 326W
Kind of package: tube
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.91 EUR
16+4.50 EUR
17+4.26 EUR
Mindestbestellmenge: 13
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IGW25N120H3FKSA1 IGW25N120H3-DTE.pdf
IGW25N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 326W
Kind of package: tube
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.91 EUR
16+4.50 EUR
17+4.26 EUR
150+4.09 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IGW25N120H3FKSA1 DS_IG25N120H3_1_1_final.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304325305e6d01258d0f50a8369e
Hersteller: Infineon
Transistor IGBT ; 1200V; 20V; 50A; 100A; 326W; 5,0V~6,5V; 115nC; -40°C~175°C; IGW25N120H3FKSA1 IGW25N120H3 TIGW25n120h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+13.45 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IGW25N120H3FKSA1 DS_IG25N120H3_1_1_final.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304325305e6d01258d0f50a8369e
IGW25N120H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/277ns
Switching Energy: 2.65mJ
Test Condition: 600V, 25A, 23Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 326 W
auf Bestellung 1445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.96 EUR
30+5.65 EUR
120+4.70 EUR
510+4.00 EUR
1020+3.87 EUR
Mindestbestellmenge: 2
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IHW15N120E1XKSA1 IHW15N120E1.pdf
IHW15N120E1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 62.2W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 62.2W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 90nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 1940ns
Turn-off time: 1450ns
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.23 EUR
30+2.39 EUR
32+2.26 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IHW15N120E1XKSA1 IHW15N120E1.pdf
IHW15N120E1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 62.2W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 62.2W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 90nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 1940ns
Turn-off time: 1450ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 47 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.23 EUR
30+2.39 EUR
32+2.26 EUR
120+2.17 EUR
480+2.16 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IHW15N120R3
Hersteller: Infineon
Transistor IGBT ; 1200V; 20V; 30A; 45A; 254W; 5,1V~6,4V; 165nC; -40°C~175°C; IHW15N120R3FKSA1 IHW15N120R3 TIHW15n120r3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+5.68 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IHW15N120R3FKSA1 IHW15N120R3.pdf
IHW15N120R3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 127W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 127W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 165nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-off time: 346ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IHW15N120R3FKSA1 IHW15N120R3_Rev2_2G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304320d39d590121814cb068197b
IHW15N120R3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/300ns
Switching Energy: 700µJ (off)
Test Condition: 600V, 15A, 14.6Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 254 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.23 EUR
30+4.00 EUR
120+3.28 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IHW25N120E1XKSA1 IHW25N120E1.pdf
IHW25N120E1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 92.4W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 147nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Turn-off time: 2004ns
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.90 EUR
27+2.69 EUR
29+2.55 EUR
60+2.53 EUR
120+2.43 EUR
Mindestbestellmenge: 19
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IKQ75N120CH3XKSA1 Infineon-IKQ75N120CH3-DS-v02_01-EN.pdf?fileId=5546d4625bd71aa0015bd817a3920534
IKQ75N120CH3XKSA1
Hersteller: Infineon Technologies
Description: IGBT 1200V 150A TO247-3-46
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A
Supplier Device Package: PG-TO247-3-46
Td (on/off) @ 25°C: 34ns/282ns
Switching Energy: 6.4mJ (on), 2.8mJ (off)
Test Condition: 600V, 75A, 6Ohm, 15V
Gate Charge: 370 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 938 W
auf Bestellung 212 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.82 EUR
30+13.20 EUR
120+11.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKQ75N120CH7XKSA1 Infineon-IKQ75N120CH7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c84a33f400184e2a14ad72d65
IKQ75N120CH7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 149 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-3-U01
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 56ns/470ns
Switching Energy: 5.28mJ (on), 1.76mJ (off)
Gate Charge: 518 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 549 W
auf Bestellung 478 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.35 EUR
30+12.89 EUR
120+11.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKQ75N120CS6XKSA1 IKQ75N120CS6XKSA1.pdf
IKQ75N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Mounting: THT
Type of transistor: IGBT
Power dissipation: 440W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 530nC
Technology: TRENCHSTOP™ 6
Case: PG-TO247-3-46
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.20 EUR
9+8.15 EUR
10+7.71 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKQ75N120CS6XKSA1 IKQ75N120CS6XKSA1.pdf
IKQ75N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Mounting: THT
Type of transistor: IGBT
Power dissipation: 440W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 530nC
Technology: TRENCHSTOP™ 6
Case: PG-TO247-3-46
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+12.20 EUR
9+8.15 EUR
10+7.71 EUR
1020+7.39 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKQ75N120CS6XKSA1 Infineon-IKQ75N120CS6-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01638802035216c6
IKQ75N120CS6XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 150A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 440 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/300ns
Switching Energy: 5.15mJ (on), 2.95mJ (off)
Test Condition: 600V, 75A, 4Ohm, 15V
Gate Charge: 530 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 880 W
auf Bestellung 2266 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.09 EUR
30+10.77 EUR
120+9.17 EUR
510+8.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKQ75N120CS7XKSA1 Infineon-IKQ75N120CS7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c850f4bee0185a559ec887495
IKQ75N120CS7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 154A TO247-46
Packaging: Tube
Part Status: Active
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench
Td (on/off) @ 25°C: 38ns/190ns
Switching Energy: 5.13mJ (on), 3.48mJ (off)
Test Condition: 600V, 75A, 2.1Ohm, 15V
Gate Charge: 450 nC
Current - Collector (Ic) (Max): 154 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 630 W
auf Bestellung 288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.51 EUR
30+13.66 EUR
120+11.72 EUR
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IKQ75N120CT2XKSA1 Infineon-IKQ75N120CT2-DS-v02_03-EN.pdf?fileId=5546d4625bd71aa0015bd81797280532
IKQ75N120CT2XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 150A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/328ns
Switching Energy: 6.7mJ (on), 4.1mJ (off)
Test Condition: 600V, 75A, 6Ohm, 15V
Gate Charge: 370 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 938 W
auf Bestellung 185 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.06 EUR
30+18.71 EUR
120+16.46 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120BH6XKSA1 IKW15N120BH6.pdf
IKW15N120BH6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 100W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 92nC
Technology: TRENCHSTOP™ 6
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 60A
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.68 EUR
32+2.27 EUR
34+2.14 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120BH6XKSA1 IKW15N120BH6.pdf
IKW15N120BH6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 100W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 92nC
Technology: TRENCHSTOP™ 6
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 138 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.68 EUR
32+2.27 EUR
34+2.14 EUR
600+2.06 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120CS7XKSA1 Infineon-IKW15N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97db2b905a6
IKW15N120CS7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 135 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/170ns
Switching Energy: 750µJ (on), 700µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 176 W
auf Bestellung 342 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.51 EUR
30+5.98 EUR
120+4.98 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120H3FKSA1 IKW15N120H3_Rev1_2G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304325305e6d01258df9167d3741
Hersteller: Infineon
Trans IGBT ; 1200V; 20V; 30A; 60A; 217W; 5,0V~6,5V; 75nC; -40°C~175°C; Replacement: IKW15N120H3FKSA1; IKW15N120H3; IKW15N120H3FKSA1 TIKW15n120h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+11.60 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120H3FKSA1 IKW15N120H3_Rev1_2G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304325305e6d01258df9167d3741
IKW15N120H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 260 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/260ns
Switching Energy: 1.55mJ
Test Condition: 600V, 15A, 35Ohm, 15V
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 217 W
auf Bestellung 173 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.35 EUR
30+5.88 EUR
120+4.90 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120T2FKSA1 IKW15N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d2d43acd
IKW15N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 235W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 93nC
Technology: TRENCHSTOP™ 2
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Turn-on time: 57ns
Turn-off time: 457ns
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.22 EUR
13+5.59 EUR
17+4.39 EUR
18+4.15 EUR
Mindestbestellmenge: 12
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IKW15N120T2FKSA1 IKW15N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d2d43acd
IKW15N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 235W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 93nC
Technology: TRENCHSTOP™ 2
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Turn-on time: 57ns
Turn-off time: 457ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
12+6.22 EUR
13+5.59 EUR
17+4.39 EUR
18+4.15 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120CS7XKSA1 Infineon-IKW25N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97da3d005a3
IKW25N120CS7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 55A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/160ns
Switching Energy: 1.2mJ (on), 1.1mJ (off)
Test Condition: 600V, 25A, 6Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
auf Bestellung 341 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.02 EUR
30+6.91 EUR
120+5.79 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120H3
Hersteller: Infineon
Transistor IGBT ; 1200V; 20V; 50A; 100A; 326W; 5,0V~6,5V; 115nC; -40°C~175°C; IKW25N120H3FKSA1 IKW25N120H3 TIKW25n120h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+13.06 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120H3FKSA1 IKW25N120H3-DTE.pdf
IKW25N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 326W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 115nC
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120H3FKSA1 IKW25N120H3-DTE.pdf
IKW25N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 326W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 115nC
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+17.88 EUR
8+8.94 EUR
30+5.48 EUR
60+5.45 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120H3FKSA1 Infineon-IKW25N120H3-DS-v01_02-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a304340e762c80140ed6d64cf2df4
IKW25N120H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 290 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/277ns
Switching Energy: 2.65mJ
Test Condition: 600V, 25A, 23Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 326 W
auf Bestellung 129 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.27 EUR
30+7.06 EUR
120+5.92 EUR
Mindestbestellmenge: 2
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IKW25N120T2FKSA1 IKW25N120T2.pdf
IKW25N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 349W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120T2FKSA1 IKW25N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d5a63ad1
Hersteller: Infineon
Transistor IGBT ; 1200V; 20V; 50A; 100A; 349W; 5,2V~6,4V; 120nC; -40°C~175°C;   IKW25N120T2 TIKW25n120t2
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+15.00 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120T2FKSA1 IKW25N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d5a63ad1
Hersteller: Infineon
Транз. IGBT UltraFast TO247-3 Uces=1200V; Ic=50A; Pdmax=349W
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+35.67 EUR
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IKW75N120CH7XKSA1 Infineon-IKW75N120CH7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c84a33f400184e1ecb5240a3a
IKW75N120CH7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 92A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 145 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-3-U06
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 55ns/461ns
Switching Energy: 4.22mJ (on), 1.66mJ (off)
Gate Charge: 535 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 549 W
auf Bestellung 242 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.64 EUR
30+10.48 EUR
120+8.91 EUR
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IKY75N120CH3XKSA1 Infineon-IKY75N120CH3-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015bd8176aea052c
IKY75N120CH3XKSA1
Hersteller: Infineon Technologies
Description: IGBT 1200V 150A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 292 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 38ns/303ns
Switching Energy: 3.4mJ (on), 2.9mJ (off)
Test Condition: 600V, 75A, 6Ohm, 15V
Gate Charge: 370 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 938 W
auf Bestellung 278 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.13 EUR
30+15.66 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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