Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (100188) > Seite 1655 nach 1670
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RB168VAM150TR | ROHM SEMICONDUCTOR |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMD; 150V; 1A; SOD323HE; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.89V Case: SOD323HE Kind of package: reel; tape Leakage current: 1µA Max. forward impulse current: 5A |
Produkt ist nicht verfügbar |
||||||||||||||
| RB168VYM150FHTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 150V; 1A; SOD323HE; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.89V Case: SOD323HE Kind of package: reel; tape Leakage current: 1µA Max. forward impulse current: 5A |
Produkt ist nicht verfügbar |
||||||||||||||
| CDZVT2R4.7B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 100mW; 4.7V; SMD; reel,tape; SOD923; single diode; 2uA Mounting: SMD Case: SOD923 Tolerance: ±2% Kind of package: reel; tape Power dissipation: 0.1W Type of diode: Zener Semiconductor structure: single diode Zener voltage: 4.7V Leakage current: 2µA |
Produkt ist nicht verfügbar |
||||||||||||||
 |
KDZVTFTR4.7B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 4.7V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 4.7V Kind of package: reel; tape Case: SOD123F Mounting: SMD Semiconductor structure: single diode Leakage current: 20µA |
Produkt ist nicht verfügbar |
|||||||||||||
| YFZVFHTR4.7B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 4.7V; SMD; reel,tape; SOD323HE; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Kind of package: reel; tape Case: SOD323HE Mounting: SMD Semiconductor structure: single diode Leakage current: 5µA |
Produkt ist nicht verfügbar |
||||||||||||||
| RS1E150GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 60A; 22W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 60A Power dissipation: 22W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 13.3mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
| RB051LAM-40TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 3A; SOD128; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 20V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.45V Case: SOD128 Kind of package: reel; tape Leakage current: 0.15mA Max. forward impulse current: 80A |
Produkt ist nicht verfügbar |
||||||||||||||
 |
RB520CM-30T2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD923; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.1A Semiconductor structure: single diode Max. forward voltage: 0.45V Case: SOD923 Kind of package: reel; tape Leakage current: 0.5µA Max. forward impulse current: 0.5A |
Produkt ist nicht verfügbar |
|||||||||||||
 |
2SAR533P5T100 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 3A; 500mW/2W; SC62,SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 500mW/2W Case: SC62; SOT89 Current gain: 180...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
|||||||||||||
| 2SAR543RTL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 3A; 500mW; SC96 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 0.5W Case: SC96 Current gain: 180...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
||||||||||||||
| UM6K31NFHATCN | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
||||||||||||||
 |
UM6K31NTN | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 3405 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
| UM6K33NTN | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±8V On-state resistance: 7.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
||||||||||||||
| UM6K34NTCN | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±8V On-state resistance: 9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
||||||||||||||
| EMH11T2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ Case: SOT563 Mounting: SMD Kind of package: reel; tape Base-emitter resistor: 10kΩ Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 30 Collector current: 0.1A Type of transistor: NPN x2 Power dissipation: 0.15W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ |
Produkt ist nicht verfügbar |
||||||||||||||
 |
IMH11AT110 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457 Case: SC74; SOT457 Mounting: SMD Kind of package: reel; tape Base-emitter resistor: 10kΩ Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 30 Collector current: 0.1A Type of transistor: NPN x2 Power dissipation: 0.3W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ |
Produkt ist nicht verfügbar |
|||||||||||||
 |
UMH11NTN | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Case: SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base-emitter resistor: 10kΩ Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 30 Collector current: 0.1A Type of transistor: NPN x2 Power dissipation: 0.15W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ |
Produkt ist nicht verfügbar |
|||||||||||||
 |
DAN217T146 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.3A; 4ns; SC59,SOT346; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Features of semiconductor devices: fast switching Capacitance: 3.5pF Case: SC59; SOT346 Max. forward voltage: 1.2V Max. forward impulse current: 4A Leakage current: 0.1µA Power dissipation: 0.2W Kind of package: reel; tape |
auf Bestellung 215 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
| DAN217WMTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A Power dissipation: 0.15W Case: SC89 Mounting: SMD Kind of package: reel; tape Semiconductor structure: double series Max. off-state voltage: 80V Reverse recovery time: 4ns Max. forward impulse current: 4A Max. load current: 0.3A Max. forward voltage: 1.2V Type of diode: switching Load current: 0.1A |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
2SC4713KT146R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346 Mounting: SMD Case: SC59; SOT346 Kind of package: reel; tape Type of transistor: NPN Frequency: 800MHz Polarisation: bipolar Power dissipation: 0.2W Collector-emitter voltage: 6V Current gain: 180...390 Collector current: 50mA |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
2SC4713KT146S | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346 Mounting: SMD Case: SC59; SOT346 Kind of package: reel; tape Type of transistor: NPN Frequency: 800MHz Polarisation: bipolar Power dissipation: 0.2W Collector-emitter voltage: 6V Current gain: 270...560 Collector current: 50mA |
Produkt ist nicht verfügbar |
|||||||||||||
| RCX330N25 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 40W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Drain-source voltage: 250V Drain current: 33A On-state resistance: 0.23Ω Type of transistor: N-MOSFET Power dissipation: 40W Polarisation: unipolar Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 132A |
Produkt ist nicht verfügbar |
||||||||||||||
| RD3S075CNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 190V; 7.5A; Idm: 30A; 52W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 190V Drain current: 7.5A Pulsed drain current: 30A Power dissipation: 52W Case: TO252 Gate-source voltage: ±20V On-state resistance: 347mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
RB731XNTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SC88,SOT363; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: triple independent Max. forward voltage: 0.37V Case: SC88; SOT363 Kind of package: reel; tape Leakage current: 1µA Max. forward impulse current: 0.2A |
Produkt ist nicht verfügbar |
|||||||||||||
 |
BC847BT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT23 Mounting: SMD Collector current: 0.1A Type of transistor: NPN Polarisation: bipolar Kind of package: reel; tape Power dissipation: 0.2W Case: SOT23 Frequency: 200MHz Collector-emitter voltage: 45V Current gain: 200...450 |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
DTA123YCAT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 33 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Case: SOT23 |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
DTA123YKAT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 33 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Case: SC59; SOT346 |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
KDZVTFTR2.4B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 2.4V; SMD; reel,tape; SOD123F; single diode; 200uA Mounting: SMD Case: SOD123F Semiconductor structure: single diode Zener voltage: 2.4V Leakage current: 0.2mA Power dissipation: 1W Kind of package: reel; tape Type of diode: Zener |
Produkt ist nicht verfügbar |
|||||||||||||
 |
SLR-332MG3F | ROHM SEMICONDUCTOR |
Category: THT LEDs Round Description: LED; 3.2mm; yellow green; 5.6÷16mcd; 85°; Front: convex; 2.1V Type of diode: LED Wavelength: 563nm LED lens: transparent Luminosity: 5.6...16mcd LED current: 10mA Viewing angle: 85° Front: convex Mounting: THT Terminal pitch: 2.54mm Operating voltage: 2.1V Number of terminals: 2 LED diameter: 3.2mm LED colour: yellow green |
auf Bestellung 2708 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
| SLR-342MG3F | ROHM SEMICONDUCTOR |
Category: THT LEDs Round Description: LED; 3.1mm; yellow green; 5.6÷16mcd; 40°; Front: convex; 2.1V LED colour: yellow green LED diameter: 3.1mm Type of diode: LED Wavelength: 572nm LED lens: diffused; yellow-green Luminosity: 5.6...16mcd LED current: 25mA Viewing angle: 40° Number of terminals: 2 Operating voltage: 2.1V Terminal pitch: 2.5mm Front: convex Mounting: THT |
Produkt ist nicht verfügbar |
||||||||||||||
 |
SLR-342VR3F | ROHM SEMICONDUCTOR |
Category: THT LEDs Round Description: LED; 3mm; red; 5.6÷16mcd; 40°; Front: convex; 2V; No.of term: 2 Type of diode: LED Mounting: THT LED diameter: 3mm LED colour: red Wavelength: 630nm LED lens: diffused; red Luminosity: 5.6...16mcd LED current: 10mA Viewing angle: 40° Front: convex Terminal pitch: 2.54mm Operating voltage: 2V Number of terminals: 2 |
auf Bestellung 604 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
RB500VM-40TE-17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.1A; SOD323F; reel,tape Mounting: SMD Case: SOD323F Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward voltage: 0.45V Load current: 0.1A Semiconductor structure: single diode Max. forward impulse current: 1A Leakage current: 1µA |
Produkt ist nicht verfügbar |
|||||||||||||
| R6011KNXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 53W; TO220FP Power dissipation: 53W Polarisation: unipolar Kind of package: tube Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 33A Mounting: THT Case: TO220FP Drain-source voltage: 600V Drain current: 11A On-state resistance: 720mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
||||||||||||||
 |
RQ3E180AJTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8 Power dissipation: 30W Mounting: SMD Kind of package: reel; tape Case: HSMT8 Polarisation: unipolar Gate charge: 39nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 72A Drain-source voltage: 30V Drain current: 30A On-state resistance: 5.8mΩ Type of transistor: N-MOSFET |
auf Bestellung 1270 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
DTD114EKT146 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
auf Bestellung 2395 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
| RGS50TSX2DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 197W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 67nC Kind of package: tube Turn-on time: 53ns Turn-off time: 345ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
||||||||||||||
| RGS50TSX2HRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 197W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 67nC Kind of package: tube Turn-on time: 53ns Turn-off time: 345ns |
Produkt ist nicht verfügbar |
||||||||||||||
| RGT50NL65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; TO263 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: TO263 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
||||||||||||||
| RGT50NS65DGC9 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; TO262 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: TO262 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 49nC Kind of package: tube Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
||||||||||||||
| RGT50NS65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; LPDS Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: LPDS Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
||||||||||||||
| RGTH50TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 87W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 100A Turn-on time: 65ns Turn-off time: 172ns Type of transistor: IGBT Power dissipation: 87W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 25A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 49nC |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
RB530CM-30T2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD923; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward impulse current: 0.5A Semiconductor structure: single diode Case: SOD923 Mounting: SMD Leakage current: 0.3µA Kind of package: reel; tape Load current: 0.1A Max. forward voltage: 0.46V |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
RB530CM-60T2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 0.1A; SOD923; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward impulse current: 0.2A Semiconductor structure: single diode Case: SOD923 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Load current: 0.1A Max. forward voltage: 0.6V |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
BCX19HZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 200mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 40...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
SSTA06HZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
SSTA56HZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
Produkt ist nicht verfügbar |
|||||||||||||
 |
DTB113ECHZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 1kΩ |
auf Bestellung 1705 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
DTB113ZCHZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
DTB123YCHZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
DTD113ECHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 1kΩ |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
DTD123YCHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
DTA113ZCAHZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
|||||||||||||
 |
RF101L2SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A Mounting: SMD Reverse recovery time: 25ns Max. forward impulse current: 20A Kind of package: reel; tape Type of diode: rectifying Case: SMA Max. off-state voltage: 200V Max. forward voltage: 0.87V Load current: 1A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
RF101L4STFTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SMA; Ufmax: 1.25V; Ifsm: 25A Mounting: SMD Reverse recovery time: 25ns Max. forward impulse current: 25A Kind of package: reel; tape Type of diode: rectifying Case: SMA Max. off-state voltage: 0.4kV Max. forward voltage: 1.25V Load current: 1A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
|||||||||||||
| RF101LAM2STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SOD128; Ufmax: 0.87V Mounting: SMD Reverse recovery time: 25ns Max. forward impulse current: 20A Kind of package: reel; tape Type of diode: rectifying Case: SOD128 Max. off-state voltage: 200V Max. forward voltage: 0.87V Load current: 1A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
||||||||||||||
| RF101LAM4STFTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SOD128; Ufmax: 1.25V Mounting: SMD Reverse recovery time: 25ns Max. forward impulse current: 25A Kind of package: reel; tape Type of diode: rectifying Case: SOD128 Max. off-state voltage: 0.4kV Max. forward voltage: 1.25V Load current: 1A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
||||||||||||||
| RF101LAM4STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SOD128; Ufmax: 1.25V Mounting: SMD Reverse recovery time: 25ns Max. forward impulse current: 25A Kind of package: reel; tape Type of diode: rectifying Case: SOD128 Max. off-state voltage: 0.4kV Max. forward voltage: 1.25V Load current: 1A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
||||||||||||||
| HP8MA2TB1 | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 18/15A; Idm: 48A; 7W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 18/15A Pulsed drain current: 48A Power dissipation: 7W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 16.4/29mΩ Mounting: SMD Gate charge: 22/25nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
| RGS00TS65DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 150A Turn-on time: 70ns Turn-off time: 292ns Type of transistor: IGBT Power dissipation: 163W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 50A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 58nC |
Produkt ist nicht verfügbar |
||||||||||||||
| RGS00TS65EHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 150A Turn-on time: 70ns Turn-off time: 299ns Type of transistor: IGBT Power dissipation: 163W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 50A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 58nC |
Produkt ist nicht verfügbar |
| RB168VAM150TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.89V
Case: SOD323HE
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.89V
Case: SOD323HE
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 5A
Produkt ist nicht verfügbar
| RB168VYM150FHTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.89V
Case: SOD323HE
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.89V
Case: SOD323HE
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 5A
Produkt ist nicht verfügbar
| CDZVT2R4.7B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 4.7V; SMD; reel,tape; SOD923; single diode; 2uA
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 4.7V
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 4.7V; SMD; reel,tape; SOD923; single diode; 2uA
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 4.7V
Leakage current: 2µA
Produkt ist nicht verfügbar
| KDZVTFTR4.7B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 4.7V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 4.7V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
Produkt ist nicht verfügbar
| YFZVFHTR4.7B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 4.7V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD323HE
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 4.7V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD323HE
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 5µA
Produkt ist nicht verfügbar
| RS1E150GNTB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 60A; 22W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 60A
Power dissipation: 22W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 60A; 22W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 60A
Power dissipation: 22W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RB051LAM-40TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 3A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: SOD128
Kind of package: reel; tape
Leakage current: 0.15mA
Max. forward impulse current: 80A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 3A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: SOD128
Kind of package: reel; tape
Leakage current: 0.15mA
Max. forward impulse current: 80A
Produkt ist nicht verfügbar
| RB520CM-30T2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD923; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: SOD923
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward impulse current: 0.5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD923; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: SOD923
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward impulse current: 0.5A
Produkt ist nicht verfügbar
| 2SAR533P5T100 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 500mW/2W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 500mW/2W
Case: SC62; SOT89
Current gain: 180...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 500mW/2W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 500mW/2W
Case: SC62; SOT89
Current gain: 180...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
| 2SAR543RTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 500mW; SC96
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.5W
Case: SC96
Current gain: 180...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 500mW; SC96
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.5W
Case: SC96
Current gain: 180...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
| UM6K31NFHATCN |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| UM6K31NTN |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 3405 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 228+ | 0.31 EUR |
| 298+ | 0.24 EUR |
| 506+ | 0.14 EUR |
| 685+ | 0.1 EUR |
| 725+ | 0.099 EUR |
| 3000+ | 0.096 EUR |
| UM6K33NTN |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±8V
On-state resistance: 7.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±8V
On-state resistance: 7.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| UM6K34NTCN |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| EMH11T2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Produkt ist nicht verfügbar
| IMH11AT110 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Case: SC74; SOT457
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Case: SC74; SOT457
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Produkt ist nicht verfügbar
| UMH11NTN |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Case: SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Case: SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Produkt ist nicht verfügbar
| DAN217T146 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; SC59,SOT346; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Capacitance: 3.5pF
Case: SC59; SOT346
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Leakage current: 0.1µA
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; SC59,SOT346; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Capacitance: 3.5pF
Case: SC59; SOT346
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Leakage current: 0.1µA
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 215 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 215+ | 0.33 EUR |
| DAN217WMTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Type of diode: switching
Load current: 0.1A
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Type of diode: switching
Load current: 0.1A
Produkt ist nicht verfügbar
| 2SC4713KT146R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Mounting: SMD
Case: SC59; SOT346
Kind of package: reel; tape
Type of transistor: NPN
Frequency: 800MHz
Polarisation: bipolar
Power dissipation: 0.2W
Collector-emitter voltage: 6V
Current gain: 180...390
Collector current: 50mA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Mounting: SMD
Case: SC59; SOT346
Kind of package: reel; tape
Type of transistor: NPN
Frequency: 800MHz
Polarisation: bipolar
Power dissipation: 0.2W
Collector-emitter voltage: 6V
Current gain: 180...390
Collector current: 50mA
Produkt ist nicht verfügbar
| 2SC4713KT146S |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Mounting: SMD
Case: SC59; SOT346
Kind of package: reel; tape
Type of transistor: NPN
Frequency: 800MHz
Polarisation: bipolar
Power dissipation: 0.2W
Collector-emitter voltage: 6V
Current gain: 270...560
Collector current: 50mA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Mounting: SMD
Case: SC59; SOT346
Kind of package: reel; tape
Type of transistor: NPN
Frequency: 800MHz
Polarisation: bipolar
Power dissipation: 0.2W
Collector-emitter voltage: 6V
Current gain: 270...560
Collector current: 50mA
Produkt ist nicht verfügbar
| RCX330N25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 40W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 250V
Drain current: 33A
On-state resistance: 0.23Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 40W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 250V
Drain current: 33A
On-state resistance: 0.23Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
Produkt ist nicht verfügbar
| RD3S075CNTL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 190V; 7.5A; Idm: 30A; 52W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 190V
Drain current: 7.5A
Pulsed drain current: 30A
Power dissipation: 52W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 347mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 190V; 7.5A; Idm: 30A; 52W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 190V
Drain current: 7.5A
Pulsed drain current: 30A
Power dissipation: 52W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 347mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RB731XNTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SC88,SOT363; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: triple independent
Max. forward voltage: 0.37V
Case: SC88; SOT363
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 0.2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SC88,SOT363; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: triple independent
Max. forward voltage: 0.37V
Case: SC88; SOT363
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 0.2A
Produkt ist nicht verfügbar
| BC847BT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT23
Mounting: SMD
Collector current: 0.1A
Type of transistor: NPN
Polarisation: bipolar
Kind of package: reel; tape
Power dissipation: 0.2W
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 45V
Current gain: 200...450
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT23
Mounting: SMD
Collector current: 0.1A
Type of transistor: NPN
Polarisation: bipolar
Kind of package: reel; tape
Power dissipation: 0.2W
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 45V
Current gain: 200...450
Produkt ist nicht verfügbar
| DTA123YCAT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Case: SOT23
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 556+ | 0.13 EUR |
| 685+ | 0.1 EUR |
| 839+ | 0.085 EUR |
| 900+ | 0.08 EUR |
| DTA123YKAT146 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Case: SC59; SOT346
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Case: SC59; SOT346
Produkt ist nicht verfügbar
| KDZVTFTR2.4B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 2.4V; SMD; reel,tape; SOD123F; single diode; 200uA
Mounting: SMD
Case: SOD123F
Semiconductor structure: single diode
Zener voltage: 2.4V
Leakage current: 0.2mA
Power dissipation: 1W
Kind of package: reel; tape
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 2.4V; SMD; reel,tape; SOD123F; single diode; 200uA
Mounting: SMD
Case: SOD123F
Semiconductor structure: single diode
Zener voltage: 2.4V
Leakage current: 0.2mA
Power dissipation: 1W
Kind of package: reel; tape
Type of diode: Zener
Produkt ist nicht verfügbar
| SLR-332MG3F |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT LEDs Round
Description: LED; 3.2mm; yellow green; 5.6÷16mcd; 85°; Front: convex; 2.1V
Type of diode: LED
Wavelength: 563nm
LED lens: transparent
Luminosity: 5.6...16mcd
LED current: 10mA
Viewing angle: 85°
Front: convex
Mounting: THT
Terminal pitch: 2.54mm
Operating voltage: 2.1V
Number of terminals: 2
LED diameter: 3.2mm
LED colour: yellow green
Category: THT LEDs Round
Description: LED; 3.2mm; yellow green; 5.6÷16mcd; 85°; Front: convex; 2.1V
Type of diode: LED
Wavelength: 563nm
LED lens: transparent
Luminosity: 5.6...16mcd
LED current: 10mA
Viewing angle: 85°
Front: convex
Mounting: THT
Terminal pitch: 2.54mm
Operating voltage: 2.1V
Number of terminals: 2
LED diameter: 3.2mm
LED colour: yellow green
auf Bestellung 2708 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 64+ | 1.13 EUR |
| 160+ | 0.45 EUR |
| 226+ | 0.32 EUR |
| 306+ | 0.23 EUR |
| 323+ | 0.22 EUR |
| SLR-342MG3F |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT LEDs Round
Description: LED; 3.1mm; yellow green; 5.6÷16mcd; 40°; Front: convex; 2.1V
LED colour: yellow green
LED diameter: 3.1mm
Type of diode: LED
Wavelength: 572nm
LED lens: diffused; yellow-green
Luminosity: 5.6...16mcd
LED current: 25mA
Viewing angle: 40°
Number of terminals: 2
Operating voltage: 2.1V
Terminal pitch: 2.5mm
Front: convex
Mounting: THT
Category: THT LEDs Round
Description: LED; 3.1mm; yellow green; 5.6÷16mcd; 40°; Front: convex; 2.1V
LED colour: yellow green
LED diameter: 3.1mm
Type of diode: LED
Wavelength: 572nm
LED lens: diffused; yellow-green
Luminosity: 5.6...16mcd
LED current: 25mA
Viewing angle: 40°
Number of terminals: 2
Operating voltage: 2.1V
Terminal pitch: 2.5mm
Front: convex
Mounting: THT
Produkt ist nicht verfügbar
| SLR-342VR3F |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT LEDs Round
Description: LED; 3mm; red; 5.6÷16mcd; 40°; Front: convex; 2V; No.of term: 2
Type of diode: LED
Mounting: THT
LED diameter: 3mm
LED colour: red
Wavelength: 630nm
LED lens: diffused; red
Luminosity: 5.6...16mcd
LED current: 10mA
Viewing angle: 40°
Front: convex
Terminal pitch: 2.54mm
Operating voltage: 2V
Number of terminals: 2
Category: THT LEDs Round
Description: LED; 3mm; red; 5.6÷16mcd; 40°; Front: convex; 2V; No.of term: 2
Type of diode: LED
Mounting: THT
LED diameter: 3mm
LED colour: red
Wavelength: 630nm
LED lens: diffused; red
Luminosity: 5.6...16mcd
LED current: 10mA
Viewing angle: 40°
Front: convex
Terminal pitch: 2.54mm
Operating voltage: 2V
Number of terminals: 2
auf Bestellung 604 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 0.94 EUR |
| 174+ | 0.41 EUR |
| 248+ | 0.29 EUR |
| 329+ | 0.22 EUR |
| 348+ | 0.21 EUR |
| RB500VM-40TE-17 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.1A; SOD323F; reel,tape
Mounting: SMD
Case: SOD323F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.45V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Leakage current: 1µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.1A; SOD323F; reel,tape
Mounting: SMD
Case: SOD323F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.45V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Leakage current: 1µA
Produkt ist nicht verfügbar
| R6011KNXC7G |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 53W; TO220FP
Power dissipation: 53W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 33A
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
Drain current: 11A
On-state resistance: 720mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 53W; TO220FP
Power dissipation: 53W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 33A
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
Drain current: 11A
On-state resistance: 720mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| RQ3E180AJTB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8
Power dissipation: 30W
Mounting: SMD
Kind of package: reel; tape
Case: HSMT8
Polarisation: unipolar
Gate charge: 39nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 72A
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 5.8mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8
Power dissipation: 30W
Mounting: SMD
Kind of package: reel; tape
Case: HSMT8
Polarisation: unipolar
Gate charge: 39nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 72A
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 5.8mΩ
Type of transistor: N-MOSFET
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 59+ | 1.22 EUR |
| 66+ | 1.09 EUR |
| 74+ | 0.98 EUR |
| 161+ | 0.44 EUR |
| 171+ | 0.42 EUR |
| DTD114EKT146 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 2395 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 330+ | 0.22 EUR |
| 525+ | 0.14 EUR |
| 585+ | 0.12 EUR |
| 750+ | 0.096 EUR |
| 795+ | 0.09 EUR |
| RGS50TSX2DHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-on time: 53ns
Turn-off time: 345ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-on time: 53ns
Turn-off time: 345ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| RGS50TSX2HRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-on time: 53ns
Turn-off time: 345ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-on time: 53ns
Turn-off time: 345ns
Produkt ist nicht verfügbar
| RGT50NL65DGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO263
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO263
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| RGT50NS65DGC9 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO262
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO262
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| RGT50NS65DGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| RGTH50TS65DGC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 87W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 100A
Turn-on time: 65ns
Turn-off time: 172ns
Type of transistor: IGBT
Power dissipation: 87W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 25A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 49nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 87W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 100A
Turn-on time: 65ns
Turn-off time: 172ns
Type of transistor: IGBT
Power dissipation: 87W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 25A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 49nC
Produkt ist nicht verfügbar
| RB530CM-30T2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD923; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 0.5A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 0.3µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.46V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD923; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 0.5A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 0.3µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.46V
Produkt ist nicht verfügbar
| RB530CM-60T2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 0.1A; SOD923; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.2A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.6V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 0.1A; SOD923; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.2A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.6V
Produkt ist nicht verfügbar
| BCX19HZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 40...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 40...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
| SSTA06HZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
| SSTA56HZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
| DTB113ECHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
auf Bestellung 1705 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1250+ | 0.057 EUR |
| 1395+ | 0.051 EUR |
| 1680+ | 0.043 EUR |
| 1705+ | 0.041 EUR |
| DTB113ZCHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
| DTB123YCHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
| DTD113ECHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Produkt ist nicht verfügbar
| DTD123YCHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
| DTA113ZCAHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
| RF101L2SDDTE25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 20A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 200V
Max. forward voltage: 0.87V
Load current: 1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 20A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 200V
Max. forward voltage: 0.87V
Load current: 1A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| RF101L4STFTE25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SMA; Ufmax: 1.25V; Ifsm: 25A
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 25A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.25V
Load current: 1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SMA; Ufmax: 1.25V; Ifsm: 25A
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 25A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.25V
Load current: 1A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| RF101LAM2STR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SOD128; Ufmax: 0.87V
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 20A
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD128
Max. off-state voltage: 200V
Max. forward voltage: 0.87V
Load current: 1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SOD128; Ufmax: 0.87V
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 20A
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD128
Max. off-state voltage: 200V
Max. forward voltage: 0.87V
Load current: 1A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| RF101LAM4STFTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SOD128; Ufmax: 1.25V
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 25A
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD128
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.25V
Load current: 1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SOD128; Ufmax: 1.25V
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 25A
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD128
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.25V
Load current: 1A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| RF101LAM4STR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SOD128; Ufmax: 1.25V
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 25A
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD128
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.25V
Load current: 1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SOD128; Ufmax: 1.25V
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 25A
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD128
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.25V
Load current: 1A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| HP8MA2TB1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 18/15A; Idm: 48A; 7W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 18/15A
Pulsed drain current: 48A
Power dissipation: 7W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 16.4/29mΩ
Mounting: SMD
Gate charge: 22/25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 18/15A; Idm: 48A; 7W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 18/15A
Pulsed drain current: 48A
Power dissipation: 7W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 16.4/29mΩ
Mounting: SMD
Gate charge: 22/25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RGS00TS65DHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 150A
Turn-on time: 70ns
Turn-off time: 292ns
Type of transistor: IGBT
Power dissipation: 163W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 58nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 150A
Turn-on time: 70ns
Turn-off time: 292ns
Type of transistor: IGBT
Power dissipation: 163W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 58nC
Produkt ist nicht verfügbar
| RGS00TS65EHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 150A
Turn-on time: 70ns
Turn-off time: 299ns
Type of transistor: IGBT
Power dissipation: 163W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 58nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 150A
Turn-on time: 70ns
Turn-off time: 299ns
Type of transistor: IGBT
Power dissipation: 163W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 58nC
Produkt ist nicht verfügbar