IMH11AT110 ROHM Semiconductor
auf Bestellung 5642 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 0.67 EUR |
| 10+ | 0.43 EUR |
| 100+ | 0.2 EUR |
| 1000+ | 0.16 EUR |
| 3000+ | 0.14 EUR |
| 9000+ | 0.1 EUR |
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Technische Details IMH11AT110 ROHM Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: SMT6, Part Status: Active.
Weitere Produktangebote IMH11AT110 nach Preis ab 0.17 EUR bis 0.69 EUR
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IMH11AT110 | Hersteller : Rohm Semiconductor |
 Description: TRANS PREBIAS DUAL NPN SMT6Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SMT6 Part Status: Active |
auf Bestellung 2213 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMH11A T110 | Hersteller : ROHM | SOT26/SOT363 |
auf Bestellung 2925 Stücke: Lieferzeit 21-28 Tag (e) |
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IMH11AT110 | Hersteller : ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457 Case: SC74; SOT457 Mounting: SMD Kind of package: reel; tape Base-emitter resistor: 10kΩ Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 30 Collector current: 0.1A Type of transistor: NPN x2 Power dissipation: 0.3W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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IMH11AT110 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS DUAL NPN SMT6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SMT6 Part Status: Active |
Produkt ist nicht verfügbar |
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IMH11AT110 | Hersteller : ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457 Case: SC74; SOT457 Mounting: SMD Kind of package: reel; tape Base-emitter resistor: 10kΩ Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 30 Collector current: 0.1A Type of transistor: NPN x2 Power dissipation: 0.3W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ |
Produkt ist nicht verfügbar |