RGS50TSX2HRC11 Rohm Semiconductor
Hersteller: Rohm SemiconductorTrans IGBT Chip N-CH 1200V 50A 395000mW Automotive 3-Pin(3+Tab) TO-247N
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 17+ | 9.65 EUR |
| 25+ | 8.91 EUR |
| 50+ | 8.25 EUR |
| 100+ | 7.67 EUR |
| 250+ | 7.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RGS50TSX2HRC11 Rohm Semiconductor
Description: IGBT TRENCH FLD 1200V 50A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 37ns/140ns, Switching Energy: 1.4mJ (on), 1.65mJ (off), Test Condition: 600V, 25A, 10Ohm, 15V, Gate Charge: 67 nC, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 395 W.
Weitere Produktangebote RGS50TSX2HRC11 nach Preis ab 4.95 EUR bis 13.9 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
RGS50TSX2HRC11 | Hersteller : Rohm Semiconductor |
Trans IGBT Chip N-CH 1200V 50A 395000mW Automotive 3-Pin(3+Tab) TO-247N |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
RGS50TSX2HRC11 | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FLD 1200V 50A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/140ns Switching Energy: 1.4mJ (on), 1.65mJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 67 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 395 W |
auf Bestellung 446 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
RGS50TSX2HRC11 | Hersteller : ROHM Semiconductor |
IGBT Transistors 1200V 25A Field Stop Trench IGBT. RGS50TSX2HR is a highly reliable IGBT for automotive inverter, heater. |
auf Bestellung 246 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
RGS50TSX2HRC11 | Hersteller : ROHM |
Description: ROHM - RGS50TSX2HRC11 - IGBT, 50 A, 1.7 V, 395 W, 1.2 kV, TO-247N, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.7V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 395W Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 50A SVHC: Lead (17-Jan-2023) |
auf Bestellung 373 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
| RGS50TSX2HRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 197W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 67nC Kind of package: tube Turn-on time: 53ns Turn-off time: 345ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| RGS50TSX2HRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 197W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 67nC Kind of package: tube Turn-on time: 53ns Turn-off time: 345ns |
Produkt ist nicht verfügbar |