RGT50NS65DGTL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: IGBT TRENCH FIELD 650V 48A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 2.53 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RGT50NS65DGTL Rohm Semiconductor
Description: IGBT TRENCH FIELD 650V 48A LPDS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, Supplier Device Package: LPDS, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/88ns, Test Condition: 400V, 25A, 10Ohm, 15V, Gate Charge: 49 nC, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 194 W.
Weitere Produktangebote RGT50NS65DGTL nach Preis ab 2.66 EUR bis 5.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
RGT50NS65DGTL | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FIELD 650V 48A LPDS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/88ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 194 W |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
RGT50NS65DGTL | Hersteller : ROHM Semiconductor |
IGBT Transistors ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. |
auf Bestellung 803 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
RGT50NS65DGTL | Hersteller : ROHM |
Description: ROHM - RGT50NS65DGTL - IGBT, 48 A, 1.65 V, 194 W, 650 V, TO-262, 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 194W Bauform - Transistor: TO-262 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 48A SVHC: Lead (23-Jan-2024) |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
RGT50NS65DGTL | Hersteller : ROHM |
Description: ROHM - RGT50NS65DGTL - IGBT, 48 A, 1.65 V, 194 W, 650 V, TO-262, 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 194W Bauform - Transistor: TO-262 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 48A SVHC: Lead (23-Jan-2024) |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
| RGT50NS65DGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; LPDS Mounting: SMD Type of transistor: IGBT Power dissipation: 97W Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 49nC Case: LPDS Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 75A Turn-on time: 65ns Turn-off time: 210ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| RGT50NS65DGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; LPDS Mounting: SMD Type of transistor: IGBT Power dissipation: 97W Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 49nC Case: LPDS Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 75A Turn-on time: 65ns Turn-off time: 210ns |
Produkt ist nicht verfügbar |