RGT50NS65DGC9 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: IGBT TRENCH FIELD 650V 48A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
auf Bestellung 953 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 2.01 EUR |
| 50+ | 1.6 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.19 EUR |
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Technische Details RGT50NS65DGC9 Rohm Semiconductor
Description: IGBT TRENCH FIELD 650V 48A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, Supplier Device Package: TO-262, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/88ns, Test Condition: 400V, 25A, 10Ohm, 15V, Gate Charge: 49 nC, Part Status: Active, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 194 W.
Weitere Produktangebote RGT50NS65DGC9 nach Preis ab 3.34 EUR bis 6.27 EUR
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RGT50NS65DGC9 | Hersteller : ROHM Semiconductor |
IGBT Transistors ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. |
auf Bestellung 915 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT50NS65DGC9 | Hersteller : ROHM |
Description: ROHM - RGT50NS65DGC9 - IGBT, 48 A, 1.65 V, 194 W, 650 V, TO-262, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 194W Bauform - Transistor: TO-262 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 48A SVHC: Lead (23-Jan-2024) |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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| RGT50NS65DGC9 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; TO262 Mounting: THT Type of transistor: IGBT Power dissipation: 97W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 49nC Case: TO262 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 75A Turn-on time: 65ns Turn-off time: 210ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGT50NS65DGC9 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; TO262 Mounting: THT Type of transistor: IGBT Power dissipation: 97W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 49nC Case: TO262 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 75A Turn-on time: 65ns Turn-off time: 210ns |
Produkt ist nicht verfügbar |