Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MTB60N05HDLT4 | ONSEMI |
Description: ONSEMI - MTB60N05HDLT4 - MTB60N05HDLT4, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 23850 Stücke: Lieferzeit 14-21 Tag (e) |
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MTB4N50ET4 | ONSEMI |
Description: ONSEMI - MTB4N50ET4 - NFET D2PAK 500V 1.5R TR tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 5600 Stücke: Lieferzeit 14-21 Tag (e) |
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MTB10N40ET4 | ONSEMI |
Description: ONSEMI - MTB10N40ET4 - MTB10N40ET4, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 69442 Stücke: Lieferzeit 14-21 Tag (e) |
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MTB16N25E | ONSEMI |
Description: ONSEMI - MTB16N25E - Leistungs-MOSFET, n-Kanal, 250 V, 16 A, 0.17 ohm, D2PAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 250V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: D2PAK Anzahl der Pins: 3Pin(s) Produktpalette: TMOS E-FET Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.17ohm SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 110843 Stücke: Lieferzeit 14-21 Tag (e) |
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MTB60N05HDL | ONSEMI |
Description: ONSEMI - MTB60N05HDL - MTB60N05HDL, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ11T1G | ONSEMI |
Description: ONSEMI - MMSZ11T1G - ZENER ARRAY DIODES tariffCode: 85411000 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 255766 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74LVX245DTR2 | ONSEMI |
Description: ONSEMI - MC74LVX245DTR2 - MC74LVX245DTR2, MOTOR DRIVER IC tariffCode: 85423190 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRM120ET3G | ONSEMI |
Description: ONSEMI - MBRM120ET3G - Schottky-Gleichrichterdiode, Universal, 20 V, 1 A, Einfach, DO-216AA, 2 Pin(s), 530 mV tariffCode: 85411000 Durchlassstoßstrom: 50A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Durchlassspannung, max.: 530mV usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1A euEccn: NLR Wiederkehrende Spitzensperrspannung: 20V Anzahl der Pins: 2Pin(s) Produktpalette: MBRM1 productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: Lead (23-Jan-2024) |
auf Bestellung 67765 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRM120LT3G | ONSEMI |
Description: ONSEMI - MBRM120LT3G - Schottky-Gleichrichterdiode, Universal, 20 V, 1 A, Einfach, DO-216AA, 2 Pin(s), 450 mV tariffCode: 85411000 Durchlassstoßstrom: 50A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Durchlassspannung, max.: 450mV usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1A euEccn: NLR Wiederkehrende Spitzensperrspannung: 20V Anzahl der Pins: 2Pin(s) Produktpalette: MBRM1 productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 125°C SVHC: Lead (23-Jan-2024) |
auf Bestellung 24775 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRM120LT1 | ONSEMI |
Description: ONSEMI - MBRM120LT1 - MBRM120LT1, STANDARD RECOVERY RECTIFIERS tariffCode: 85411000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 13625 Stücke: Lieferzeit 14-21 Tag (e) |
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P6KE6.8CA | ONSEMI |
Description: ONSEMI - P6KE6.8CA - P6KE6.8CA, TRANSIENT VOLTAGE SUPPRESSORS tariffCode: 85411000 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 21446 Stücke: Lieferzeit 14-21 Tag (e) |
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CS8190EDWFR20G | ONSEMI |
Description: ONSEMI - CS8190EDWFR20G - Motortreiber/Motorsteuerung, Schrittmotor, 8.5V-16V Versorgung, 6.5V/10mA/4 Ausgänge, SOIC-20 tariffCode: 85423990 rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Ausgangsstrom: 10mA Motortyp: Schrittmotor Qualifikation: - IC-Gehäuse / Bauform: SOIC MSL: MSL 3 - 168 Stunden usEccn: EAR99 Ausgangsspannung: 6.5V Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 8.5V euEccn: NLR Anzahl der Pins: 20Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 16V Betriebstemperatur, max.: 105°C Anzahl der Ausgänge: 4Ausgänge SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2743 Stücke: Lieferzeit 14-21 Tag (e) |
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FCA20N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Pulsed drain current: 60A Power dissipation: 208W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FCA20N60F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Pulsed drain current: 60A Power dissipation: 208W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FCB20N60FTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FCB20N60TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 98nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FCP20N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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FGH20N60SFDTU | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 66W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 66W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 65nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33152DG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.1...18V DC Mounting: SMD Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Kind of output: non-inverting Protection: undervoltage UVP |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33152DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.1...18V DC Mounting: SMD Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Kind of output: non-inverting Protection: undervoltage UVP |
auf Bestellung 1360 Stücke: Lieferzeit 14-21 Tag (e) |
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UC3843BD1G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: 0...70°C Topology: flyback Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: tube Power: 702mW Operating voltage: 7.6...36V |
Produkt ist nicht verfügbar |
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UC3843BD1R2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: 0...70°C Topology: flyback Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Power: 702mW Operating voltage: 7.6...36V |
Produkt ist nicht verfügbar |
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UC3843BDR2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO14 Mounting: SMD Operating temperature: 0...70°C Topology: flyback Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Power: 862mW Operating voltage: 7.6...36V |
Produkt ist nicht verfügbar |
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UC3843BNG | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: 0...70°C Topology: flyback Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: tube Power: 1.25W Operating voltage: 7.6...36V |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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UC3843BVD1R2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -40...105°C Topology: flyback Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Power: 702mW Operating voltage: 7.6...36V |
Produkt ist nicht verfügbar |
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UC3843BVDR2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO14 Mounting: SMD Operating temperature: -40...105°C Topology: flyback Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Power: 862mW Operating voltage: 7.6...36V |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC573ADTG | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: HC Operating temperature: -55...125°C Kind of package: tube Kind of output: 3-state Family: HC |
Produkt ist nicht verfügbar |
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MC74HC573ADTR2G | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: HC Operating temperature: -40...85°C Kind of output: 3-state; non-inverting Trigger: level-triggered |
Produkt ist nicht verfügbar |
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MC74HC573ADWG | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SO20-W Manufacturer series: HC Operating temperature: -40...85°C Kind of output: 3-state; non-inverting Trigger: level-triggered |
auf Bestellung 260 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC573ADWR2G | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Manufacturer series: HC Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Family: HC |
Produkt ist nicht verfügbar |
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MM74HC573MTC | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: HC Operating temperature: -40...85°C Kind of output: 3-state Trigger: level-triggered |
auf Bestellung 207 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC573MTCX | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: HC Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Trigger: level-triggered Quiescent current: 160µA |
Produkt ist nicht verfügbar |
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MM74HC573WM | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SO20 Manufacturer series: HC Operating temperature: -40...85°C Kind of output: 3-state Trigger: level-triggered Quiescent current: 80µA |
Produkt ist nicht verfügbar |
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MM74HC573WMX | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SO20 Manufacturer series: HC Operating temperature: -40...85°C Kind of output: 3-state Trigger: level-triggered |
Produkt ist nicht verfügbar |
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MC14077BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; XNOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: XNOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: tube Delay time: 150ns Family: HEF4000B |
Produkt ist nicht verfügbar |
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MC14077BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; XNOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: XNOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 150ns Family: HEF4000B |
Produkt ist nicht verfügbar |
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MC100EP08DG | ONSEMI |
Category: Gates, inverters Description: IC: digital; multiple-function,XNOR,XOR; Ch: 1; IN: 4; SMD; SO8; tube Type of integrated circuit: digital Kind of gate: multiple-function; XNOR; XOR Number of channels: single; 1 Number of inputs: 4 Mounting: SMD Case: SO8 Supply voltage: 3...5.5V DC Operating temperature: -40...85°C Kind of package: tube |
Produkt ist nicht verfügbar |
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BAS16DXV6T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT563; Ufmax: 1.25V; 500mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: double independent Capacitance: 2pF Case: SOT563 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 50µA Power dissipation: 0.5W Kind of package: reel; tape |
auf Bestellung 2440 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16HT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 0.5A; SOD323; 300mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.5A Semiconductor structure: single diode Case: SOD323 Power dissipation: 0.3W Kind of package: reel; tape |
auf Bestellung 14250 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH077N65F-F085 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 54A Pulsed drain current: 156A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FCH077N65F-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 32A Pulsed drain current: 162A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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LM311DR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 1; 200ns; 5÷30V; SMT; SO8 Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 1 Delay time: 200ns Mounting: SMT Case: SO8 Operating voltage: 5...30V |
auf Bestellung 2195 Stücke: Lieferzeit 14-21 Tag (e) |
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FDA18N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11.4A; Idm: 76A; 239W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11.4A Pulsed drain current: 76A Power dissipation: 239W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FDP18N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 235W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF18N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF18N50T | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BC817-40LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 9743 Stücke: Lieferzeit 14-21 Tag (e) |
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BC817-40LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 7580 Stücke: Lieferzeit 14-21 Tag (e) |
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TIP102G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 2W Case: TO220AB Current gain: 20000 Mounting: THT Kind of package: tube Heatsink thickness: 1.15...1.39mm |
Produkt ist nicht verfügbar |
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BC857ALT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 3403 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC3646S-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 0.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz |
Produkt ist nicht verfügbar |
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2SC3646T-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 0.5W Case: SOT89 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz |
Produkt ist nicht verfügbar |
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BC548BTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Current gain: 110...800 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
auf Bestellung 847 Stücke: Lieferzeit 14-21 Tag (e) |
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BC548CTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Current gain: 110...800 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
Produkt ist nicht verfügbar |
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FOD814A | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-150%@1mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 4µs Turn-off time: 3µs Manufacturer series: FOD814 |
auf Bestellung 206 Stücke: Lieferzeit 14-21 Tag (e) |
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FOD814A3SD | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-150%@1mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 4µs Turn-off time: 3µs Manufacturer series: FOD814 |
auf Bestellung 470 Stücke: Lieferzeit 14-21 Tag (e) |
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FOD814ASD | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-150%@1mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 4µs Turn-off time: 3µs Manufacturer series: FOD814 |
auf Bestellung 798 Stücke: Lieferzeit 14-21 Tag (e) |
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6N137M | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: gate; Uinsul: 5kV; CTR@If: 19-50%@16mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: gate Insulation voltage: 5kV CTR@If: 19-50%@16mA Transfer rate: 1Mbps Collector-emitter voltage: 20V Case: DIP8 Turn-on time: 30ns Turn-off time: 10ns Slew rate: 2.5kV/μs Manufacturer series: 6N137M |
auf Bestellung 1238 Stücke: Lieferzeit 14-21 Tag (e) |
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6N137SDM | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 10Mbps Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate CTR@If: 19-50%@16mA Transfer rate: 10Mbps Case: Gull wing 8 Turn-on time: 30ns Turn-off time: 10ns Slew rate: 10kV/μs Manufacturer series: 6N137M |
auf Bestellung 936 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD340G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 15W Case: DPAK Current gain: 30...240 Mounting: SMD Kind of package: tube Frequency: 10MHz |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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MTB60N05HDLT4 |
Hersteller: ONSEMI
Description: ONSEMI - MTB60N05HDLT4 - MTB60N05HDLT4, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - MTB60N05HDLT4 - MTB60N05HDLT4, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 23850 Stücke:
Lieferzeit 14-21 Tag (e)MTB4N50ET4 |
Hersteller: ONSEMI
Description: ONSEMI - MTB4N50ET4 - NFET D2PAK 500V 1.5R TR
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - MTB4N50ET4 - NFET D2PAK 500V 1.5R TR
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 5600 Stücke:
Lieferzeit 14-21 Tag (e)MTB10N40ET4 |
Hersteller: ONSEMI
Description: ONSEMI - MTB10N40ET4 - MTB10N40ET4, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - MTB10N40ET4 - MTB10N40ET4, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 69442 Stücke:
Lieferzeit 14-21 Tag (e)MTB16N25E |
Hersteller: ONSEMI
Description: ONSEMI - MTB16N25E - Leistungs-MOSFET, n-Kanal, 250 V, 16 A, 0.17 ohm, D2PAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 250V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 125W
Bauform - Transistor: D2PAK
Anzahl der Pins: 3Pin(s)
Produktpalette: TMOS E-FET Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.17ohm
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - MTB16N25E - Leistungs-MOSFET, n-Kanal, 250 V, 16 A, 0.17 ohm, D2PAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 250V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 125W
Bauform - Transistor: D2PAK
Anzahl der Pins: 3Pin(s)
Produktpalette: TMOS E-FET Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.17ohm
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 110843 Stücke:
Lieferzeit 14-21 Tag (e)MTB60N05HDL |
Hersteller: ONSEMI
Description: ONSEMI - MTB60N05HDL - MTB60N05HDL, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - MTB60N05HDL - MTB60N05HDL, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)MMSZ11T1G |
Hersteller: ONSEMI
Description: ONSEMI - MMSZ11T1G - ZENER ARRAY DIODES
tariffCode: 85411000
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
Description: ONSEMI - MMSZ11T1G - ZENER ARRAY DIODES
tariffCode: 85411000
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 255766 Stücke:
Lieferzeit 14-21 Tag (e)MC74LVX245DTR2 |
Hersteller: ONSEMI
Description: ONSEMI - MC74LVX245DTR2 - MC74LVX245DTR2, MOTOR DRIVER IC
tariffCode: 85423190
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - MC74LVX245DTR2 - MC74LVX245DTR2, MOTOR DRIVER IC
tariffCode: 85423190
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)MBRM120ET3G |
Hersteller: ONSEMI
Description: ONSEMI - MBRM120ET3G - Schottky-Gleichrichterdiode, Universal, 20 V, 1 A, Einfach, DO-216AA, 2 Pin(s), 530 mV
tariffCode: 85411000
Durchlassstoßstrom: 50A
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Durchlassspannung, max.: 530mV
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 1A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 20V
Anzahl der Pins: 2Pin(s)
Produktpalette: MBRM1
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
SVHC: Lead (23-Jan-2024)
Description: ONSEMI - MBRM120ET3G - Schottky-Gleichrichterdiode, Universal, 20 V, 1 A, Einfach, DO-216AA, 2 Pin(s), 530 mV
tariffCode: 85411000
Durchlassstoßstrom: 50A
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Durchlassspannung, max.: 530mV
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 1A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 20V
Anzahl der Pins: 2Pin(s)
Produktpalette: MBRM1
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
SVHC: Lead (23-Jan-2024)
auf Bestellung 67765 Stücke:
Lieferzeit 14-21 Tag (e)MBRM120LT3G |
Hersteller: ONSEMI
Description: ONSEMI - MBRM120LT3G - Schottky-Gleichrichterdiode, Universal, 20 V, 1 A, Einfach, DO-216AA, 2 Pin(s), 450 mV
tariffCode: 85411000
Durchlassstoßstrom: 50A
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Durchlassspannung, max.: 450mV
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 1A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 20V
Anzahl der Pins: 2Pin(s)
Produktpalette: MBRM1
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 125°C
SVHC: Lead (23-Jan-2024)
Description: ONSEMI - MBRM120LT3G - Schottky-Gleichrichterdiode, Universal, 20 V, 1 A, Einfach, DO-216AA, 2 Pin(s), 450 mV
tariffCode: 85411000
Durchlassstoßstrom: 50A
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Durchlassspannung, max.: 450mV
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 1A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 20V
Anzahl der Pins: 2Pin(s)
Produktpalette: MBRM1
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 125°C
SVHC: Lead (23-Jan-2024)
auf Bestellung 24775 Stücke:
Lieferzeit 14-21 Tag (e)MBRM120LT1 |
Hersteller: ONSEMI
Description: ONSEMI - MBRM120LT1 - MBRM120LT1, STANDARD RECOVERY RECTIFIERS
tariffCode: 85411000
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - MBRM120LT1 - MBRM120LT1, STANDARD RECOVERY RECTIFIERS
tariffCode: 85411000
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 13625 Stücke:
Lieferzeit 14-21 Tag (e)P6KE6.8CA |
Hersteller: ONSEMI
Description: ONSEMI - P6KE6.8CA - P6KE6.8CA, TRANSIENT VOLTAGE SUPPRESSORS
tariffCode: 85411000
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - P6KE6.8CA - P6KE6.8CA, TRANSIENT VOLTAGE SUPPRESSORS
tariffCode: 85411000
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 21446 Stücke:
Lieferzeit 14-21 Tag (e)CS8190EDWFR20G |
Hersteller: ONSEMI
Description: ONSEMI - CS8190EDWFR20G - Motortreiber/Motorsteuerung, Schrittmotor, 8.5V-16V Versorgung, 6.5V/10mA/4 Ausgänge, SOIC-20
tariffCode: 85423990
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Ausgangsstrom: 10mA
Motortyp: Schrittmotor
Qualifikation: -
IC-Gehäuse / Bauform: SOIC
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Ausgangsspannung: 6.5V
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 8.5V
euEccn: NLR
Anzahl der Pins: 20Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Versorgungsspannung, max.: 16V
Betriebstemperatur, max.: 105°C
Anzahl der Ausgänge: 4Ausgänge
SVHC: No SVHC (23-Jan-2024)
Description: ONSEMI - CS8190EDWFR20G - Motortreiber/Motorsteuerung, Schrittmotor, 8.5V-16V Versorgung, 6.5V/10mA/4 Ausgänge, SOIC-20
tariffCode: 85423990
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Ausgangsstrom: 10mA
Motortyp: Schrittmotor
Qualifikation: -
IC-Gehäuse / Bauform: SOIC
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Ausgangsspannung: 6.5V
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 8.5V
euEccn: NLR
Anzahl der Pins: 20Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Versorgungsspannung, max.: 16V
Betriebstemperatur, max.: 105°C
Anzahl der Ausgänge: 4Ausgänge
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 2743 Stücke:
Lieferzeit 14-21 Tag (e)FCA20N60 |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 208W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 208W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
FCA20N60F |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 208W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 208W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
FCB20N60FTM |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FCB20N60TM |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FCP20N60 |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 7.75 EUR |
11+ | 6.66 EUR |
16+ | 4.6 EUR |
17+ | 4.35 EUR |
FGH20N60SFDTU |
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 66W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 66W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 66W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 66W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 35.75 EUR |
MC33152DG |
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: non-inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: non-inverting
Protection: undervoltage UVP
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
47+ | 1.54 EUR |
52+ | 1.39 EUR |
63+ | 1.13 EUR |
MC33152DR2G |
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: non-inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: non-inverting
Protection: undervoltage UVP
auf Bestellung 1360 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 1.56 EUR |
53+ | 1.36 EUR |
69+ | 1.04 EUR |
73+ | 0.99 EUR |
UC3843BD1G |
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Power: 702mW
Operating voltage: 7.6...36V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Power: 702mW
Operating voltage: 7.6...36V
Produkt ist nicht verfügbar
UC3843BD1R2G |
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Operating voltage: 7.6...36V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Operating voltage: 7.6...36V
Produkt ist nicht verfügbar
UC3843BDR2G |
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Operating voltage: 7.6...36V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Operating voltage: 7.6...36V
Produkt ist nicht verfügbar
UC3843BNG |
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Power: 1.25W
Operating voltage: 7.6...36V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Power: 1.25W
Operating voltage: 7.6...36V
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 35.75 EUR |
UC3843BVD1R2G |
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Operating voltage: 7.6...36V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Operating voltage: 7.6...36V
Produkt ist nicht verfügbar
UC3843BVDR2G |
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Operating voltage: 7.6...36V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Operating voltage: 7.6...36V
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 2.56 EUR |
MC74HC573ADTG |
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Family: HC
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Family: HC
Produkt ist nicht verfügbar
MC74HC573ADTR2G |
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: HC
Operating temperature: -40...85°C
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: HC
Operating temperature: -40...85°C
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Produkt ist nicht verfügbar
MC74HC573ADWG |
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Manufacturer series: HC
Operating temperature: -40...85°C
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Manufacturer series: HC
Operating temperature: -40...85°C
Kind of output: 3-state; non-inverting
Trigger: level-triggered
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 10.87 EUR |
14+ | 5.31 EUR |
15+ | 5.02 EUR |
MC74HC573ADWR2G |
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HC
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HC
Produkt ist nicht verfügbar
MM74HC573MTC |
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: HC
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: HC
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 8.77 EUR |
16+ | 4.7 EUR |
17+ | 4.45 EUR |
MM74HC573MTCX |
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: HC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Trigger: level-triggered
Quiescent current: 160µA
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: HC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Trigger: level-triggered
Quiescent current: 160µA
Produkt ist nicht verfügbar
MM74HC573WM |
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20
Manufacturer series: HC
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
Quiescent current: 80µA
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20
Manufacturer series: HC
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
Quiescent current: 80µA
Produkt ist nicht verfügbar
MM74HC573WMX |
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20
Manufacturer series: HC
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20
Manufacturer series: HC
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
Produkt ist nicht verfügbar
MC14077BDG |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XNOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XNOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 150ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; XNOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XNOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 150ns
Family: HEF4000B
Produkt ist nicht verfügbar
MC14077BDR2G |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XNOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XNOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 150ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; XNOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XNOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 150ns
Family: HEF4000B
Produkt ist nicht verfügbar
MC100EP08DG |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; multiple-function,XNOR,XOR; Ch: 1; IN: 4; SMD; SO8; tube
Type of integrated circuit: digital
Kind of gate: multiple-function; XNOR; XOR
Number of channels: single; 1
Number of inputs: 4
Mounting: SMD
Case: SO8
Supply voltage: 3...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Category: Gates, inverters
Description: IC: digital; multiple-function,XNOR,XOR; Ch: 1; IN: 4; SMD; SO8; tube
Type of integrated circuit: digital
Kind of gate: multiple-function; XNOR; XOR
Number of channels: single; 1
Number of inputs: 4
Mounting: SMD
Case: SO8
Supply voltage: 3...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Produkt ist nicht verfügbar
BAS16DXV6T1G |
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT563; Ufmax: 1.25V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: double independent
Capacitance: 2pF
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.5W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT563; Ufmax: 1.25V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: double independent
Capacitance: 2pF
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.5W
Kind of package: reel; tape
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
278+ | 0.26 EUR |
368+ | 0.19 EUR |
560+ | 0.13 EUR |
669+ | 0.11 EUR |
866+ | 0.083 EUR |
916+ | 0.078 EUR |
1000+ | 0.075 EUR |
BAS16HT1G |
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.5A; SOD323; 300mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.5A
Semiconductor structure: single diode
Case: SOD323
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.5A; SOD323; 300mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.5A
Semiconductor structure: single diode
Case: SOD323
Power dissipation: 0.3W
Kind of package: reel; tape
auf Bestellung 14250 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
532+ | 0.13 EUR |
794+ | 0.09 EUR |
1667+ | 0.043 EUR |
3106+ | 0.023 EUR |
4311+ | 0.017 EUR |
4546+ | 0.016 EUR |
FCH077N65F-F085 |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
FCH077N65F-F155 |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Pulsed drain current: 162A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Pulsed drain current: 162A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
LM311DR2G |
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 200ns; 5÷30V; SMT; SO8
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 1
Delay time: 200ns
Mounting: SMT
Case: SO8
Operating voltage: 5...30V
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 200ns; 5÷30V; SMT; SO8
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 1
Delay time: 200ns
Mounting: SMT
Case: SO8
Operating voltage: 5...30V
auf Bestellung 2195 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
136+ | 0.53 EUR |
178+ | 0.4 EUR |
228+ | 0.31 EUR |
290+ | 0.25 EUR |
317+ | 0.23 EUR |
319+ | 0.22 EUR |
FDA18N50 |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11.4A; Idm: 76A; 239W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11.4A
Pulsed drain current: 76A
Power dissipation: 239W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11.4A; Idm: 76A; 239W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11.4A
Pulsed drain current: 76A
Power dissipation: 239W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDP18N50 |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 8.94 EUR |
FDPF18N50 |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.89 EUR |
21+ | 3.49 EUR |
28+ | 2.65 EUR |
29+ | 2.5 EUR |
FDPF18N50T |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
BC817-40LT1G |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 9743 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
358+ | 0.2 EUR |
544+ | 0.13 EUR |
695+ | 0.1 EUR |
1025+ | 0.07 EUR |
1563+ | 0.046 EUR |
2942+ | 0.024 EUR |
3106+ | 0.023 EUR |
BC817-40LT3G |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 7580 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
358+ | 0.2 EUR |
481+ | 0.15 EUR |
763+ | 0.094 EUR |
2539+ | 0.028 EUR |
2674+ | 0.027 EUR |
TIP102G |
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 2W
Case: TO220AB
Current gain: 20000
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 2W
Case: TO220AB
Current gain: 20000
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Produkt ist nicht verfügbar
BC857ALT1G |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 3403 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1367+ | 0.052 EUR |
2273+ | 0.031 EUR |
2733+ | 0.026 EUR |
3031+ | 0.024 EUR |
3268+ | 0.022 EUR |
3403+ | 0.021 EUR |
2SC3646S-TD-E |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Produkt ist nicht verfügbar
2SC3646T-TD-E |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Produkt ist nicht verfügbar
BC548BTA |
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
auf Bestellung 847 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
179+ | 0.4 EUR |
268+ | 0.27 EUR |
581+ | 0.12 EUR |
847+ | 0.084 EUR |
BC548CTA |
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Produkt ist nicht verfügbar
FOD814A |
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 1.14 EUR |
102+ | 0.7 EUR |
137+ | 0.52 EUR |
206+ | 0.34 EUR |
FOD814A3SD |
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
auf Bestellung 470 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
105+ | 0.69 EUR |
131+ | 0.55 EUR |
180+ | 0.4 EUR |
190+ | 0.38 EUR |
FOD814ASD |
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
auf Bestellung 798 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
66+ | 1.09 EUR |
151+ | 0.47 EUR |
185+ | 0.39 EUR |
188+ | 0.38 EUR |
196+ | 0.37 EUR |
500+ | 0.36 EUR |
6N137M |
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; Uinsul: 5kV; CTR@If: 19-50%@16mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Insulation voltage: 5kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Collector-emitter voltage: 20V
Case: DIP8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 2.5kV/μs
Manufacturer series: 6N137M
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; Uinsul: 5kV; CTR@If: 19-50%@16mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Insulation voltage: 5kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Collector-emitter voltage: 20V
Case: DIP8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 2.5kV/μs
Manufacturer series: 6N137M
auf Bestellung 1238 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 2.04 EUR |
57+ | 1.26 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
6N137SDM |
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 10Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
CTR@If: 19-50%@16mA
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 10kV/μs
Manufacturer series: 6N137M
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 10Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
CTR@If: 19-50%@16mA
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 10kV/μs
Manufacturer series: 6N137M
auf Bestellung 936 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 2.3 EUR |
49+ | 1.47 EUR |
65+ | 1.12 EUR |
68+ | 1.06 EUR |
200+ | 1.02 EUR |
MJD340G |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 15W
Case: DPAK
Current gain: 30...240
Mounting: SMD
Kind of package: tube
Frequency: 10MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 15W
Case: DPAK
Current gain: 30...240
Mounting: SMD
Kind of package: tube
Frequency: 10MHz
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 1.36 EUR |
70+ | 1.02 EUR |