![FCA20N60F FCA20N60F](https://static6.arrow.com/aropdfconversion/arrowimages/c6d20460783e54d84bba012ed7ac5468a36ed88/to-3pn-3.jpg)
FCA20N60F ON Semiconductor
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
29+ | 5.39 EUR |
30+ | 5.02 EUR |
33+ | 4.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FCA20N60F ON Semiconductor
Description: MOSFET N-CH 600V 20A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PN, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V.
Weitere Produktangebote FCA20N60F nach Preis ab 5.8 EUR bis 11.72 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
FCA20N60F | Hersteller : onsemi / Fairchild |
![]() |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FCA20N60F | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
auf Bestellung 415 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
FCA20N60F | Hersteller : FAIRCHIL.. |
![]() |
auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
![]() |
FCA20N60F | Hersteller : ON Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
FCA20N60F | Hersteller : ON Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
FCA20N60F | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Pulsed drain current: 60A Power dissipation: 208W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
FCA20N60F | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Pulsed drain current: 60A Power dissipation: 208W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |